• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Restorative Dentistry and Endodontics
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• 제35권5호
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• pp.359-367
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• 2010

연구목적: 본 연구의 목적은 glass ionomer cement (GIC)와 혼합된 mineral trioxide aggregate (MTA)의 생체친화성을 평가하고 이것을 MTA, GIC, IRM, SuperEBA와 비교해보는 것이다. 연구 재료 및 방법: 재료의 세포독성을 평가하기 위해 MG-63세포를 이용해 주사전자 현미경 관찰과 XTT assay를 실시하였다. 결과: 주사전자 현미경 관찰에서는 GIC와 혼합한 MTA, MTA, GIC의 표면에서 세포질 돌기를 가진 많은 세포들이 밀집되고 융합된 형태로 관찰되었다. 반면 IRM과 SuperEBA에서는 세포들의 수가 적고 둥근 양상을 보여주었다. XTT assay에서는 GIC와 혼합한 MTA에서의 세포 활성도는 모든 시점에서 MTA 또는 GIC와 유사하였다. 반면 IRM과 SuperEBA에서는 모든 시점에서 세포활성도가 다른 그룹에 비해 유의하게 더 낮았다. 결론: 본 연구에서 GIC와 혼합된 MTA는 MTA, GIC와 유사한 세포 반응을 나타냈다. 이것은 GIC와 혼합된 MTA가 MTA, GIC와 마찬가지로 좋은 생체친화성을 가진 재료라는 것을 시사한다.

• 폴리머
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• 제37권6호
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• pp.744-752
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• 2013

배향된 상태에서 복굴절이 없는 zero-${\Delta}$n 재료를 개발할 목적으로 용융혼합된 폴리락타이드(PLLA, (+)복굴절)/폴리(메틸 메타크릴레이트)(PMMA, (-)복굴절) 블렌드의 상용성과 PMMA의 공단량체인 메틸 아크릴레이트(MA)가 PLLA와의 상용성에 미치는 영향을 살펴보았다. MA 함량에 상관없이 모든 블렌드에서 조성에 따라 변하는 단일 $T_g$와 90% 이상의 투명도가 관찰되었으며, 이로부터 용융혼합된 PLLA/PMMA 블렌드는 분자수준에서 상용성을 보임을 확인하였다. 이들 블렌드는 $280^{\circ}C$의 온도에서도 안정한 단일상을 유지하였다. MA가 17 mol%첨가된 PMMA17과 PLLA의 블렌드의 경우 Hoffman-Weeks 방법을 적용하여 평형융점으로부터 구한 상호작용 에너지 밀도(B)는 $-0.74J/cm^3$이었다. PLLA/PMMA 블렌드는 배향되었을 때 조성고분자들의 고유 배향복굴절이 상쇄되어 특정 혼합비에서 "0" 가까운 복굴절 특성을 나타내었다. PLLA/PMMA5 블렌드의 경우 혼합비에 따른 복굴절 분산을 측정한 결과 zero-${\Delta}$n 특성을 보이는 혼합비에서 역분산이 나타나며, 파장의존성이 없는 복굴절 특성을 보이는 조성이 존재함을 확인하였다.

• 한국광학회지
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• 제9권2호
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• pp.111-116
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• 1998

활성층의 변형이 0.9%의 압축변형에서 1.4%의 인장변형에 이르는 13개의 InGaAs/InGaAsP 따로가둠 이종접합 다중양자우물 레이저의 문턱전류밀도 값을 계산하여, 변형이 문턱전류밀도에 미치는 영향을 살펴보았다. 양자우물의 띠간격이 1.55.mu.m가 되도록 양자우물의 두께를 정하였고, 레이저의 이득계산을 위한 띠구조 및 전이행렬요소의 계산에는 블록대각화된 8 * 8 이차 $k^{\rarw}$ * $p^{\rarw}$ 해밀토니안을 사용하여 전도띠의 비포물선형 효과 및 원자가띠의 섞임을 모두 고려하였다. 실온의 문턴전류밀도는 중양공띠와 경양공띠가 교차하는 0.4% 인장변형의 값과 두번째 전도부띠가 생기기 시작하는 0.5% 인장변형의 값에서 불연속점을 가졌다. 실온의 문턱전류밀도는 이 0.4-0.5% 인장변형 부근에서 극대가 되고, 양쪽으로 변형값이 달라지면서 감소하였다가 극소점을 거쳐 다시 약간 증가하는 모습을 보였는데, 이는 실험결과와 대체로 일치한다. 이 계산결과를 변형의 효과에 관한 다른 여러 이론적 혹은 실험적인 논문들과 비교 토론하였다.

• 펄프종이기술
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• 제42권5호
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• pp.37-46
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• 2010

This study was carried out to develop new application field and obtain the basic data of mixed paper with wood pulp and chitosan fiber for producing functional paper. Two types of wood pulp, such as SwBKP and HwBKP, were mixed with chitosan fiber. Physical and optical properties, water vapor absorption, air permeability, antibacterial activity and ash were measured. And the surface morphology of manufactured paper was observed using SEM. The results are as follows. It was revealed that density, breaking length, burst index, tear index, folding endurance and brightness were reduced but water vapor absorption and air permeability were on the rise in the structural view of SwBKP according to increasing the chitosan fiber ratio. Those HwBKP added chitosan fiber were great not only in the strength but also water vapor absorption and air permeability except for brightness. The water vapor absorption was lower and the air permeability was higher in the HwBKP added various chitosan fiber ratios than those with no chitosan fiber. It is estimated that these properties were related with various mixed rate of chitosan fiber. Particularly, air permeability was strongly dependent on the mixed rate of chitosan fiber. The chitosan fiber has superior antibacterial property, comparing with wood fiber. Adding chitosan fiber to the wood pulp was found to have an excellent antibacterial activity, more than 90%. The ashes were determined within 0.5%. Special bonds between chitosan fiber and wood pulp was observed by SEM and it means that the chitosan fiber were combined equally in the interior of wood pulp. In conclusion, mixing wood pulp with chitosan fiber can not only improves the quality of paper but also extend the usage of paper as a functional paper by using inherent property of chitosan. After all, production of functional paper added chitosan fiber is expected for new valuable industry of paper.

• 접착 및 계면
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• 제22권3호
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• pp.98-105
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• 2021

본 연구에서는 실란기가 도입된 UV 경화형 우레탄 아크릴레이트를 사용하여 투명성 및 접착성/이형성을 갖춘 silver nanoparticle 전사용 접착 조성물을 제조하였다. Silver nanoparticle이 PET 위에 패터닝되어 있는 Ag/PET 필름과 전사 대상인 PC필름 사이에 제조한 접착 조성물을 도포하고 UV로 광경화한 후, PET를 제거하여 Ag/PC 필름을 제조하였다. 실란기가 도입된 UV 경화형 우레탄 아크릴레이트는 polycaprolactone diol (PCL)과 isophrone diisocyanate (IPDI), 2-hydroxyethyl methacrylate (HEMA), (3-aminopropyl)triethoxysilane (APTES)를 사용하여 합성하였다. APTES의 실란기는 특수 처리된 Ag표면과 반응하여 계면접착력이 개선될 수 있으며, 실란기가 도입된 우레탄 아크릴레이트와 희석제로 투입하는 기능성 아크릴 희석제에 의하여 PC필름과의 접착력을 향상시켰다. 우레탄 아크릴레이트 합성은 FT-IR을 이용하여 분석하였으며, APTES의 몰비와 아크릴 희석제 조성에 따라, 접착 특성과 광학 특성, 전사 특성 등을 비교하였다. 결과적으로, PUA2S1_0.5의 조건으로 제조된 접착 조성물에서 가장 우수한 전사 특성을 확인하였다.