• Journal of the Optical Society of Korea
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• 제6권4호
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• pp.180-184
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• 2002

In this study, we investigated mask errors, photo errors with attenuated phase shift mask and off-axis illumination, and etch errors in dry etch conditions. We propose that total process proximity correction (TPPC), a concept merging every process step error correction, is essential in a lithography process when minimum critical dimension (CD) is smaller than the wavelength of radiation. A correction rule table was experimentally obtained applying TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.

• 대한기계학회논문집A
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• 제29권4호
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• pp.624-631
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• 2005

A note-book PC has become thinner in recent years, which requires the optical disc drives with small height and high memory capacity. Therefore the actuator of optical disc drives must be thinner and have disc tilt compensation function for high density memory. In this paper, the actuator with hybrid type is investigated for 3-axis ultra-slim actuator. A 3-axis ultra-slim actuator is designed by using the modal analysis of the actuator and the electromagnetic analysis of magnetic circuit to achieve dynamic characteristics. Also, magnetic force between tilt magnet and tilt yoke is investigated to and the influence on the DC sensitivity in the focus and track directions.

• 전기학회논문지
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• 제58권1호
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• pp.210-215
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• 2009

In this study event-related optical signals were extracted from the prefrontal cortexes using functional near infrared spectroscopy while subjects were carrying out 2-back working memory tasks. Four events such as start, yes, no, and error were considered based on the onsets of the stimulus, positive true responses, positive false responses, and negative responses in the 2-back working memory task, respectively. The optical signals recorded were analyzed by peri-event histograms and power spectrum distributions. The results showed specific characteristics of the event-related optical neuronal signals and an opened possibility of an application to control a non-invasive brain-computer interface system or an object of a virtual reality.

• 조명전기설비학회논문지
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• 제18권3호
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• pp.15-19
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• 2004

다중모드 광섬유를 이용한 홀로그래픽 메모리 시스템을 제안하였다. 이 시스템에서 다중모드 광섬유에서 나온 빛을 기준빔으로 사용하여 홀로그램을 다중화 하였다. 제안된 시스템은 다중모드에서 나온 스펙클 패턴과 다중모드 광섬유의 위치와 같은 2가지의 다중화 자유도를 가지고 있다.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2003년도 추계학술대회논문집
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• pp.208-213
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• 2003

A note-book PC has become thinner in recent years. And optical disc drives are required to have high memory capacity. Therefore, the actuator of optical disc drives must be thinner and have disc tilt compensation function for high density memory. In this paper, the hybrid type actuator is investigated for 3-axis ultra-slim actuator. A 3-axis ultra-slim actuator is designed by using the modal analysis of the actuator and the electromagnetic analysis of magnetic circuit to achieve dynamic characteristics and magnetic flux density for high sensitivity, respectively. Also, magnetic force between tilt magnet and tilt yoke is investigated to find the influence on the DC sensitivity in the focus and track directions.

• 한국광학회:학술대회논문집
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• 한국광학회 2005년도 제16회 정기총회 및 동계학술발표회
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• pp.62-63
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• 2005

• 한국광학회:학술대회논문집
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• 한국광학회 2004년도 하계학술발표회
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• pp.108-109
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• 2004

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 동계학술발표회 논문집
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• pp.295-296
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• 2007

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.267-268
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.