• Information and Communications Magazine
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• v.7 no.3
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• pp.27-34
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• 1990

The $(L,\psi)$ feature description on the binary boundary air craft image is introduced of classifying 3-D object (aircraft) identification. Three types for associative matrix memories are employed and tested for their classification performance. The fast association involved in these memories can be implemented using a parallel optical matrix-vector operation. Two associative memories are based on pseudoinverse solutions and the third one is interoduced as a paralell version of a nearest-neighbor classifier. Detailed simulation results for each associative processor are provided.

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.56-56
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• 1996

• Transactions of the Society of Information Storage Systems
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• v.7 no.2
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• pp.53-59
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• 2011

We have developed a compact and high-power mode-locked fiber laser for multilayered optical memory. Fiber lasers have the potential to be compact and stable light sources that can replace bulk solid-state lasers. To generate high-power pulses, we used stretched-pulse mode locking. The average power and pulse width of the output pulse from the fiber laser that we developed were 109 mW and 2.1 ps, respectively. The dispersion of the output pulse was compensated with an external single-mode fiber of 2.5 m length. The pulse was compressed from 2.1 ps to 93 fs by dispersion compensation. The fiber laser we have developed is possible to use as a light source of multilayered optical memory. We also present a fiber confocal microscope as an alignment-free readout system of multilayered optical memories. The fiber confocal microscope does not require fine pinhole position alignment because the fiber core is used as the point light source and the pinhole, and both of which are always located at the conjugated point. The configuration reduces the required accuracy of pinhole position alignment. With these techniques we can present an all-fiber recording and readout system for multilayered memories.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.54-55
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• 2000

매질의 성능이 이상적이라 가정하고, 여러 가지 시스템 파라미터로 2진 홀로그램을 저장하는 경우에 있어서, 얻을 수 있는 면적 저장밀도와 다중화 횟수를 산출하고 비교하였다. 이 논문의 결과들은 새로운 디스크형 3차원 홀로그래픽 메모리[1-3]를 연구하거나 매질을 개발함에 있어서 비교 지표로 사용될 수 있다.(중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.79-79
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• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• Transactions of the Society of Information Storage Systems
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• v.2 no.1
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• pp.1-6
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• 2006

An optical ROM card system which using an optical probe array generated by Talbot effect was proposed as new robust storage solution. To improve the optical density and to decrease the power consumption of the system, it is very important to make the spot sizes of optical probes smaller as well as to increase the optical efficiency from the light source to optical probes. In this study, a microlens illuminated aperture array for generating high efficiency optical probe away with small beam spot was designed and fabricated using monolithic lithography integration method. The maximum intensity of optical probes of microlens illuminated aperture array increased about 12 times of that of aperture array, and the full width half maximum of the optical probe at Talbot plane generated by microlens illuminated aperture array was $0.77{\mu}m$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.10C
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• pp.937-944
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• 2002

The current fast-growing Internet traffic is demanding more and more network capacity. Photonic packet switching offers high-speed, data rate/format transparency, and configurability, which are some of the important characteristics needed in future networks supporting different forms of data. In this paper, we define that optical backbone networks for IP transport consist of optical packet core switches and optical fibers. We propose a multi-link photonic packet switch managing as single media which unifies the whole bandwidth of multiple wavelengths on the optical fiber in the WDM optical networks. The proposed switch uses optical packet memories of output link equally as well as using the WDM buffer. So it cuts down the required number of buffers and realizes of the optical packet memory economically.

• Journal of Communications and Networks
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• v.1 no.3
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• pp.145-152
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• 1999

A new switch architecture is presented to enhance out-put queuing in photonic packet switches. Its appkication is for a packet switching enviroment based on the optical transport of fixed length packets. This architecture consists of a couple of cas-cading switching elements with output queuing, whose buffer ca-pacity is limited by photonic technology. The introduction of a suitable buffer management allows a very good and balanced ex-ploitation of the available optical memories, realized with fiber de-lay lines. In particular, packet loss performance is here evaluated showing the improvement with respect to the single switch and a way to design large optical switches is shown in order to meet broadband network requirements.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.269-274
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• 1999

As the semiconductor industry enters the next century, we are facing to the technological changes and challenges. Optical lithography has driven by the miniaturisation of semiconductor devices and has been accompanied by an increase in wafer productivity and performance through the reduction of the IC image geometries. In the last decade, DRAM(Dynamic Random Access Memories) have been quadrupoling in level of integration every two years. Korean chip makers have been produced the memory devices, mainly DRAM, which are the driving force of IC＇s(Integrated Circuits) development and are the technology indicator for advanced manufacturing. Therefore, Korean chip makers have an important position to predict and lead the patterning technology. In this paper, we will be discussed the limitations of the optical lithography, such as KrF and ArF. And, post optical lithography technology, such as E-beam lithography, EUV and E-beam Projection Lithography shall be introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).