• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.974-982
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• 2009

Photomixing techniques beating two optical signals with different wavelengths and strong correlations are also very useful techniques to make a continuous wave(CW) signals in the range of millimeter(mm) and terahertz(THz) frequencies. An optical double sideband-suppressed carrier(DSB-SC) technique is one of the popular techniques to generate two optical signals with different wavelengths and strong correlations. DSB-SC signals with strong correlations are generated by a CW modulation of an optical carrier with a local oscillator and an optical modulator. In the previous parers related the DSB-SC for producing the CW signals within the range of mm and THz frequencies, there have been no reports why the optical carrier should suppress. In order to clear that, we have analyzed and measured the characteristics of the mm-wave CW signals made by the DSB-SC photomixing in this paper. From our analysis and measurement results, compared with the case of the DSB with the maximized optical carrier, the power and phase noise have improved about 23.9 dB and 21 dBc/Hz(@ 1 MHz offset frequency) in the case of the DSB with the minimized optical carrier (that is to say, the DSB-SC). Consequently, it is evident reason that the optical carrier should sufficiently suppress to obtain the mm-wave CW signals with the high power and low noise. This paper has given very helpful data to make mm- and THz-wave CW signals using photomixing techniques with the DSB-SC because the reason why the optical carrier should be suppressed is reported in this paper based on the numerical and experimental results.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.301-306
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• 2014

A porous silicon microcavity (PSMC) sensor has been made for vapors of solvent solutions, and a method has been developed in order to obtain simultaneous determination of two volatile substances with different concentrations. In our work, the temperature of the solution and the velocity of the air stream flowing through the solution have been used to control the response of the sensor for ethanol and acetone solutions. We study the dependence of the cavity-resonant wavelength shift on solvent concentration, velocity of the airflow and solution temperature. The wavelength shift depends linearly on concentration and increases with solution temperature and velocity of the airflow. The dependence of the wavelength shift on the solution temperature in the measurement contains properties of the temperature dependence of the solvent vapor pressure, which characterizes each solvent. As a result, the dependence of the wavelength shift on the solution temperature discriminates between solutions of ethanol and acetone with different concentrations. This suggests a possibility for the simultaneous determination of the volatile substances and their concentrations.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.128-132
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• 2015

In this study, we prepared cadmium phosphate glasses with various compositions, given by $xCdO-(100-x)P_2O_5$ (x = 10-55 mol%), and analyzed their Fourier transform infrared spectra, dissolution rate, thermal expansion coefficient, glass transition temperature, glass softening temperature, and optical band gap. We found that the thermal expansion coefficient and dissolution rate increased while the glass transition temperature and glass softening temperature decreased with increasing CdO content. These results suggest that CdO acts as a network modifier in binary phosphate glass and weakens its structure.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.124-127
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• 2005

Rewritable optical memory devices such as an CD-RW and DVD+RW are data storage media, which take advantage of the different optical properties in the amorphous and crystalline states of phase change materials. The switching property, structural transformation, transformation kinetics and chemical bindings of $Ge_xSb_{100-x}$($6{\le}x{\le}$34) were studied to investigate the feasibility of applying $Ge_xSb_{100-x}$ alloys in optical memory. The $Ge_xSb_{100-x}$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, inductively coupled plasma atomic emission spectrometer (ICP-AES) and atomic force microscopy (AEM). Optimum fiim composition of $Ge_xSb_{100-x}$ was studied and its minimum time fur laser induced crystallization and optical contrast fur phase transition was performed. These results might be correlated with the binding energies between Ge and Sb, and indicate that $Ge_xSb_{100-x}$ have an potential far optical memory applications.

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.235-240
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• 2008

This paper presents results and observations obtained from a study of the optical and thermal properties of alkali tellurite depending on the composition. Fourier transform infrared (FT-IR) spectra showed evidence of chemical modification from $TeO_4$ trigonal bipyramids (tbp) to $TeO_3$ trigonal pyramids (tp) in tellurite glasses. The optical band gaps of the different glass samples calculated using Tauc's method were found to range from 3.5-3.8 eV. The glass transition temperature (Tg) and glass stability (${\Delta}T$) of alkali tellurite glasses were investigated, as $M_2O$ [M: Li, Na, K] amounted to 25 mol%, through the use of differential thermal analysis (DTA). The coefficient of thermal expansion (CTE) was measured in a thermo mechanical analysis (TMA) with a slow heating rate after the glass samples were annealed. The results confirm that the optical band gap of alkali tellurite glasses depends on the Te-O-Te structural relaxation related to the ratio of bridging/non bridging oxygen (BO/NBO). In contrast, the thermal properties are related to the ionic field strength of the Te-O-M and M-O-M bonds, and the Te-O-Te breakage depends on the ratio of BO/NBO.

• Composites Research
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• v.27 no.5
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• pp.183-189
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• 2014

Experimental considerations have been performed to obtain the clear optical microscopic images of graphene oxide which are useful to probe its quality and morphological information such as a shape, a size, and a thickness. In this study, we investigated the contrast enhancement of the optical images of graphene oxide after hydrazine vapor reduction on a Si substrate coated with a 300 nm-thick $SiO_2$ dielectric layer. Also, a green-filtered light source gave higher contrast images comparing to optical images under standard white light. Furthermore, it was found that a image channel separation technique can be an alternative to simply identify the morphological information of graphene oxide, where red, green, and blue color values are separated at each pixels of the optical image. The approaches performed in this study can be helpful to set up a simple and easy protocol for the morphological identification of graphene oxide using a conventional optical microscope instead of a scanning electron microscopy or an atomic force microscopy.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.208-211
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• 2012

In the present study, a ZnO thin film, as a buffer layer of ITO (indium tin oxide) film was deposited on glass substrates by RF magnetron sputtering at low temperature of $150^{\circ}C$. In order to estimate the optical characteristics and compare with the experimental results in Glass/ZnO(100 nm)/ITO(35 nm) multilayered film, the simulation program, EMP (Essential Macleod Program) was adopted. The sheet resistance and optical transmittance of the films were measured using the four-point probe method and spectrophotometer, respectively. From X-ray diffraction patterns, all the films deposited at $150^{\circ}C$ demonstrated only the amorphous phase. Optical transmittance was the highest at a ZnO thickness of 100 nm. The ITO(35 nm)/ZnO(100 nm) film exhibits an optical transmittance of >92% at 550 nm. The multilayered film showed an electrical sheet resistance of 407 ${\Omega}/sq.$, which is significantly better than that of a single-layer ITO film without a ZnO buffer layer (815 ${\Omega}/sq.$).

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.121-124
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• 2016

ZnSnO₃ (ZTO)/Ag/ ZnSnO₃ (ZTO) trilayer films were prepared on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering. The electrical resistivity and optical transmittance of the films were investigated as a function of the Ag interlayer thickness. ZTO films with a 15 nm thick Ag interlayer show the highest average visible transmittance (83.2%) in the visible range. In this study, the highest figure of merit (2.1×10⁻² Ω cm) is obtained with the ZTO 50 nm/Ag 15 nm/ZTO 50 nm films. The enhanced optical and electrical properties of ZTO films with a 15 nm thick Ag interlayer are attributed to the crystallization of the Ag interlayer, as supported by the distinct XRD pattern of the Ag (111) peaks. From the observed results, higher optical and electrical performance of the ZTO film with a 15 nm thick Ag interlayer seems to make a promising alternative to conventional transparent conductive ITO films.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.5
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• pp.244-248
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• 2012

ITO/$TiO_2$ films were deposited by RF magnetron sputtering on glass substrates and then the effect of vacuum annealing on the structural, optical and electrical properties of the films was investigated. The structural, optical and electrical properties are strongly related to annealing temperature. The films annealed at $300^{\circ}C$ showed a grain size of 40.9 nm, which was larger than as-deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical resistivity decreased. The ITO/$TiO_2$ films annealed at $300^{\circ}C$ showed the highest optical transmittance of 81% and also showed the lowest electrical resistivity of $3.05{\times}10^{-4}{\Omega}cm$, in this study.

• Progress in Superconductivity
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• v.3 no.1
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• pp.95-98
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• 2001

Recently, NiO films have been studied as a buffer layer to fabricate the superconductor with preferred orientation and as a diffusion barrier to prevent the reaction between superconductor and textured nickel substrate . We fabricated NiO films on textured Ni substrate by thermal oxidation with various variables of temperature, oxidation time, atmosphere, and cooling rate. We investigated the alignment of NiO films by XRD and pole figure and the microstructures by SEM. (200) <001> alignment of NiO film was observed at the oxidation condition of $1200^{\circ}C$ far 10min and slow cooling in O2 atmosphere. During the process in Ar atmosphere, we could also observe the thermal faceting which affects the alignment of NiO alms on Ni substrate.