• Korean Journal of Materials Research
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• v.23 no.1
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• pp.59-66
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• 2013

Opal glass samples having different chemical compositions were synthesized and transparent glass was obtained after melting. The effects of $TiO_2$, $BaF_2$, and $CeO_2$ content on the color of the opal glass were studied by observing images of the opal samples and analyzing the results via ultraviolet visible spectroscopy and color spectrometry. The aesthetic properties of the opal glass were determined by studying the transmittance of visible light in the 400 nm to 700 nm range. The basic chemical composition of opal glass was $SiO_2$ 52.9 wt%, $Al_2O_3$ 12.35 wt%, $Na_2CO_3$ 15.08 wt%, $K_2CO_3$ 10.35 wt%, $Ca_3(PO)_4$ 4.41 wt%, $MgCO_3$ 1.844 wt%, $LiCO_3$ 2.184 wt%, and $TiO_2$ 0.882 wt%. The glass samples were prepared by varying the weight percentage of $TiO_2$, $BaF_2$, and $CeO_2$. The transmittance of visible light was decreased from 95 % to 75 % in the glass samples in which $TiO_2$ content was increased from 0 to 3.882 wt%. In the blue spectrum region, as the content of $TiO_2$ increased, the reflectance value was observed to become higher. This implies that $TiO_2$ content induces more crystal formation and has an important effect on the optical properties of the glass. The opalescence of opal samples that contained $CeO_2$ or $BaF_2$ is stronger than that in the samples containing $TiO_2$. Opal glass samples comprising $TiO_2$ had tetragonal lattice structures; samples including $CeO_2$ as an additive had cubic lattice structures (FCC, $CeO_2$).

• Korean Journal of Remote Sensing
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• v.20 no.2
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• pp.91-102
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• 2004

This paper reflects the estimation of using the EOC(Electro-optical Camera) images supporting GIUH(geomorphological instantaneous unit hydrograph) approach. We have analyzed GIUH in its density and frequency distribution by creating a DEM(digital elevation model) for the sub basin produced from the EOC images and examined topographical and hydrological application possibility of the EOC images. In this process, we have topographical basin characteristic analysis that use the remote sensing technique analyzing the DEM creation process of the EOC stereo images by studying the basic topographical hydrology analysis about abstraction technique since it is flirty complex and is more time-consuming than other method. we executed statistical analysis of a basin size and river length using the frequency function after divided lattice spacing applied have to the sub river basin from the image data and the digital map into 10m intervals ranging from 10m to 100m. After comparing and examining the peak and time to peak of the GIUH, we proceeded with a comparative analysis by lattice concerning the topographical divergence rate, area ratio, length ratio. Accumulating the peak and time to peak of the GIUH is altered to non-linear form in accordance to lattice dimension as well as basin factor. It was proved that the lattice dimension is one of the important factors about the peak and time to peak of the GIUH.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.213-217
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• 1996

HgS and HgS: Co crystals and films grown by the slow cooling and the chemical bath deposition method were used to measure their crystal structure and their optical absorption spectra. HgS and HgS: Co crystals are hexagonal structure with the lattice constant $a_0=4.155{\AA}$, $c_0=9.505{\AA}$ for HgS and $a_0=4.148{\AA}$, $c_0=9.462{\AA}$ for HgS and $a_0=4.135{\AA}$, $c_0=9.442{\AA}$ for HgS: Co, respectively. The optical energy gap of these crystals are given as 2.040 eV for HgS and 1.900 eV for HgS: Co, and the optical energy gap of these films were 2.440 eV for HgS and 1.940 eV for HgS: Co at room temperature, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.337-337
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• 2013

ZnO seed layers were deposited on a quartz substrate using the sol-gel method, and B-doped ZnO (BZO) nanorods with different B concentrations ranging from 0 to 2.5 at.% were grown on the ZnO seed layers by the hydrothermal method. The structural, optical, electrical propertiesof the ZnO and BZO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), ultraviolet-visible spectroscopy, and hall effect. The ZnO and BZO nanorods grew well aligned on the surface of the quartz substrates. From the XRD data, it can be seen that the B doping is responsible for the distortion of the ZnO lattice. The PL spectra show near-band-edge emission and deep-level emission, and they also show that B doping significantly affects the PL properties of ZnO nanorods. The optical band gaps are changed by B doping, and thus the Urbach energy value changed with the optical band gap of the ZnO nanorods. From the hall measurements, it can be observed that the values of electrical resistivity, carrier concentration, and mobility are changed by B doping.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.97-103
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• 1999

Zinc sulfide is a ll-VI compound with a large direct band gap in the near-UV region and a promising material for blur-light emitting diode and laser diode. It was identified that the structure had zinc blonde structure through the analysis of X-ray diffraction patterns. It's lattice constant was measured to be $a_o=5.411{\AA}$. The optical absorption, photocurrent, and photoluminescence spectra were measured to investigate the optical properties of zinc sulfide single crystal. The optical energy band gap measured at room temperature was 3.61eV The energy band gap of zinc sulfide annealed in zinc vapor at $800^{\circ}C$ was lower 0.1eV than that of as-grown zinc sulfide through the analysis of the photocurrent spectra. The photoluminescence spectra were measured ranging from 30K to 293K for the two cases of as-grown and annealed zinc sulfide. As-grown ZnS single crystal had peaks at 350nm, 392nm, 465nm, and annealed zinc sulfide had peaks at 349nm.

• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.56-59
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• 2000

$CdGaInS_4$ and $CdGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral(hexagonal) structure. with lattice constants $a=3.913{\AA},\;c=37.245{\AA}$ for $CdGaInS_4$, and $a=3.899{\AA}$ and $c=36.970{\AA}$ for $CdGaInS_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct and indirect band gap. the direct and indirect energy gaps are found to be 2.771 and 2.503 eV for $CdGaInS_4$, and 2.665 and 2.479 eV for $CdGaInS_4:Er^{3+}$ at 10 K. The temperature dependence of the optical energy gap was well represented by the Varshni equation. In $CdGaInS_4$, the values of ${\alpha},\;{\beta}$ of the direct and the indirect energy gap were found to be $7.57{\times}10^{-4}eV/K$. $6.53{\times}10^{-4}eV/K$ and 240K. 197K. and the values of ${\alpha}$ and ${\beta}$ of the direct and the indirect energy gap in the $CdGaInS_4:Er^{3+}$ were given by $8.28{\times}10^{-4}eV/K,\;2.08{\times}10^{-4}eV/K$ and 425 K, 283 K, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.5
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• pp.1-4
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• 1982

Single crystals of InSe were obtained by the Bridgman method. The crystal structure was hombohedral(R3m) with lattice paramete. a=4.02A, c=24.96A. At 300$^{\circ}$K the electrical conductivity was about ~10-2($\Omega$.cm)-1, reslpectively. The electrical conductivity type was n- type. The donor level located at 0.072eV below the conduction band. The Photosensitivity was observed in range from 840nm to 1120nm. The energy gap of InSe single crystal measured from the photoconductivity and the optical transmittance spectrum was 1.20eV, 1.21eV, respectively.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.494-499
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• 2004

The structural, electrical and optical properties of GaN epilayers grown on various ion-implanted sapphire(0001) substrates by MOCVD were investigated. Sapphire substrates have been widely adopted to grow high quality GaN epilayer despite the large differences of lattice constant and thermal expansion coefficient between them. So, GaN or AlN buffer layer and pre-treatment was indispensably introduced before the GaN epilayer growth. The ion-implanted substrate's surface had decreased internal free energies during the growth of the ions implanted sapphire(0001) substrates. The crystal and optical properties of GaN epilayers grown in ions implanted sapphire(0001) substrate were improved. Also, excessively roughened and modified surface by ions degraded the GaN epilyers. Not only the ionic radius but also the chemical species of implanted sapphire(0001) substrates could improve the properties of GaN epilayers grown by MOCVD. This result implies that higher quality of GaN epilayers was achieved by using ion-implanted sapphire(0001) substrate with various ions.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.114-118
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• 2016

$Cu_{1.8}Zn_{1.2}(Sn_{1-x}Ge_x)S_4$ (CZTGeS) nanocrystals were mechanochemically synthesized from elemental precursor powders without using any organic solvents and any additives. The composition of CZTGeS nanocrystals were systematically varied with different Ge mole fraction (x) from 0.1 to 0.9. The XRD, Raman spectroscopy, high-resolution TEM, and diffuse reflectance studies show that the as-synthesized CZTGeS nanocrystals exhibited consistent changes in various structural and optical properties as a function of x, such as lattice parameters, wave numbers for $A_1$ Raman vibration mode, interplanar distances (d-spacing), and optical bandgap energies. The bandgap energy of the synthesized CZTGeS nanocrystals gradually increases from 1.40 to 1.61 eV with increasing x from 0.1 to 0.9, demonstrating that Ge-doping is useful means to tune the bandgap of mechanochemically synthesized nanocrystals-based kesterite thin-film solar cells. The preliminary solar cell performance is presented with an efficiency of 3.66%.