• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.81.1-81.1
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• 2012

나노임프린트 리소그라피(Nano-Imprint Lithography, NIL) 기술은 기판위의 resin을 나노구조물이 각인된 스탬프로 눌러서 나노구조물을 형성하는 기술로, 경제적이고 효과적으로 나노구조물을 제작할 수 있는 기술이다. 그중에서도 UV 기반의 나노임프린트(UV-NIL) 기술은 resin을 투명한 스탬프로 누른뒤 UV로 경화시켜 나노구조물을 형성하는 기술로써 고온, 고압($140{\sim}180^{\circ}C$, 10~30bar)이 필요한 가열식 나노임프린트 기술에 비해 상온, 상압($20^{\circ}C$, 1bar)에서도 구조물 형성이 가능하여 다층구조 형성에 적합하다. 연속적인 임프린팅 공정에 의해 resin이 quarz 스탬프에 잔류하여 패터닝에 결함을 유발하게 되므로 오염물을 제거하기 위한 세정공정이 필요하다. 하지만 UV에 의해 경화된 resin은 cross-linking을 형성하여 화학적인 내성이 증가하게 되므로 제거하기가 어렵다. 현재는 resin 제거를 위한 세정공정으로 SPM($H_2SO_4/H_2O_2$) 세정이 사용되고 있는데 세정시간이 길고 세정 후에 입자 또는 황 잔유물이 남으며 많은 유해용액 사용의 문제점이 있어 효과적으로 resin을 제거할 세정공정이 필요한 상황이다. 본 연구에서는 친환경적인 UV 세정 및 오존수 세정공정을 적용하여 경화된 resin을 제거하는 연구를 진행하였다. 실험샘플은 약 100nm 두께의 resin을 증착한 $1.5cm{\times}1.5cm$ $SiO_2$ 쿠폰 wafer를 사용하였으며, UV 및 오존수의 처리시간을 달리하여 resin 제거효율을 평가하였다. ATR-FTIR 장비를 사용하여 시간에 따른 resin의 두께를 측정한 결과, UV 세정으로 100nm 높이의 resin중에 80nm의 bulk resin이 단시간에 제거가 되었고 나머지 20nm의 resin thin film은 오존수 세정으로 쉽게 제거되는 것을 확인 하였다. 또한 표면에 남은 resin residue와 particle을 제거하기 위해서 SC-1 세정을 진행하였고 contact angle과 optical microscope 장비를 사용하여 resin이 모두 제거된 것을 확인하였다.

• Laser Solutions
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• v.17 no.1
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• pp.1-6
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• 2014

Indium tin oxide (ITO) is an important transparent conducting oxide (TCO). ITO films have been widely used as transparent electrodes in optoelectronic devices such as organic light-emitting devices (OLED) because of their high electrical conductivity and high transmission in the visible wavelength. Finding ways to control ITO micromachining depth is important role in the fabrication and assembly of display field. This study presented the depth control of ITO patterns on glass substrate using a femtosecond laser and slit. In the proposed approach, a gaussian beam was transformed into a quasi-flat top beam by slit. In addition, pattern of square type shaped by slit were fabricated on the surfaces of ITO films using femtosecond laser pulse irradiation, under 1030nm, single pulse. Using femtosecond laser and slit, we selectively controlled forming depth and removed the ITO thin films with thickness 145nm on glass substrates. In particular, we studied the effect of pulse number on the ablation of ITO. Clean removal of the ITO layer was observed when the 6 pulse number at $2.8TW/cm^2$. Furthermore, the morphologies and fabricated depth were characterized using a optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS).

• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.160-168
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.47-54
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• 2018

In this paper, we describe the thermal characteristics of the output voltages of ethanol gas sensor according to the amount of radiation incident on the infrared sensors located at each focal point of two elliptical waveguides. In order to verify the output characteristics of the gas sensor according to the amount of incident light on the infrared sensor, two combinations of sensor modules were fabricated. Hydrophobic thin film is deposited on one of the reflectors of sensor modules and one of the two infrared sensors was equipped with a hollow disk (10 Ø), and the temperature characteristics of the infrared sensor equipped with the hollow disk (10 Ø) and the infrared sensor without the disk were tested. The temperature was varied from 253 K to 333 K at 10 K intervals based on 298 K. The properties of ethanol gas sensor have been identified with respect to varying temperature for a range of ethanol concentration from 0 ppm to 500 ppm. In the case of an infrared sensor equipped with a hollow disk (10 Ø), the output voltage of the sensor decreased by 0.8 mV and 1 mV, respectively, as the temperature increased. Conversely, the output voltage of the diskless infrared sensor showed an average increase of 67 mV and 57 mV as the temperature increased. The ethanol concentrations estimated on the basis of results show an error of more than 10 % for less than 100 ppm concentration. However, if the ethanol concentration exceeds 100 ppm, the gas concentration can be estimated within the range of ${\pm}10%$.

• Journal of the Korean institute of surface engineering
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• v.36 no.3
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• pp.229-233
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• 2003

Boron-Carbon-Nitrogen (B-C-N) system is an attractive ternary material since it has not only an extremely high hardness but also a number of other prominent characteristics such as chemical inertness, elevated melting point, and low thermal expansion. In this paper, the corrosion behavior of B-C-N thin films in aqueous solution was investigated B-C-N films with different composition were deposited on a platinum plate by magnetron sputtering in the thickness range of 150-280 nm. In order to understand effect of pH of solutions, $BC_{2.\;4}N$ samples were immerged in 1M HCl, 1M NaCl, and 1M NaOH solution at 298k, respectively. BCN samples with different carbon contents were exposed to 1M NaOH solutions to investigate effect of chemical composition on corrosion resistance. Corrosion rates of samples were measured by ellipsometry, From results, optical constant of $BC_{2,\;4}N$ films was found to be $N_2=2.110-0.295i$. The corrosion rates of $Bi_{1.\;0}C_{2.\;4}N_{1.\;0}$ films were NaOH>NaCl>HCl in orders. With increasing carbon content in B-C-N films, the corrosion resistance of B-C-N films was enhanced. The lowest corrosion rate was obtained for $B_{1.\;0}C_{4.\;4}N_{1.\;9}$ film.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.133-138
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• 2009

Effects of bipolar pulse driving frequency between 50 kHz and 250 kHz on the discharge shapes were analyzed by measuring plasma characteristics by OES (Optical Emission Spectroscopy) and Langmuir probe. Plasma characteristics were modeled by a simple electric field analysis and fluid plasma modeling. Discharge shapes by a continuous dc and bipolar pulsed dc were different as a dome-type and a vertical column-type at the cathode. From OES, the intensity of 811.5 nm wavelength, the one of the main peaks of Ar, decreased to about 43% from a continuous dc to 100 kHz. For increasing from 100 kHz to 250 kHz, the intensity of 811.5 nm wavelength also decreased by 46%. The electron density decreased by 74% and the electron temperature increased by 36% at the specific position due to the smaller and denser discharge shape for increasing pulse frequency. Through the numerical analysis, the negative glow shape of a continuous dc were similar to the electric potential distribution by FEM (Finite Element Method). For the bipolar pulsed dc, we found that the electron temperature increased to maximum 10 eV due to the voltage spikes by the fast electron acceleration generated in pre-sheath. This may induce the electrons and ions from plasma to increase the energetic substrate bombardment for the dense thin film growth.

• Journal of Information Display
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• v.8 no.2
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• pp.10-14
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• 2007

A blazed $GxL^{TM}$ device is described as having high optical efficiency (> 70% for RGB lasers), and high contrast ratio (> 10,000:1), and that is highly reliable when used in a large-area laser projection system. It has a robust design and precise stress control technology to maintain a uniform shape (bow and tilt) of more than 6,000 ribbons, a $0.25-{\mu}m$ CMOS compatible fabrication processing and planarization techniques to reduce fluctuation of the ribbons, and a reliable Al-Cu reflective film that provided protection against a high-power laser. No degradation in characteristics of the GxL device is observed after operating a 5,000- lumen projector for 2,000 hours and conducting 2,000 temperature cycling tests at $-20^{\circ}C$ and $+80^{\circ}C$. At the 2005 World Exposition in Aichi, Japan the world's largest laser projection screen with a size of 2005 inches (10 m ${\times}$ 50 m) and 6 million pixels (1,080 ${\times}$ 5,760) was demonstrated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.424-427
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• 2002

In this papaer, there is a basic research for the development of the Hybrid digital radiation detector with a new system, make up for existing digital radiation detector of direct/indirect method with a weak point. for enhance the efficiency characteristics of signal response from X-ray detector using the a-Se, We make sample with various kinds of layer, through the ratio of As(0.l%,0.3%,0.5%,1%,1.5%,5%,10%). We measure net charge with a leakage current and photo current for electric charateristics. Ratio of As in a-Se consist of 7 stage, It made of using the thermal deposition system, In the made of samples, we made multi layer using the EFIRON optical adhesives from phosphor layer consist of Oxybromide$(BrO_2)$. As a result of X-ray measurement, the best result is ; leakage current(0.30nA/cm2), net charge(610.13pC/cm2/mR) when the condition is voltage(9V/um), 0.3% ratio of As in multi layer(BrO2 + a-Se)

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.81-84
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• 2010

Al-doped ZnO (AZO) films were prepared by an Ar:$H_2$ gas radio frequency (RF) magnetron sputtering system with a AZO ($2\;wt{\cdot}%\;Al_2O_3$) ceramic target at the low temperature of $100^{\circ}C$ and annealed in hydrogen ambient at the temperature of $300^{\circ}C$. To investigate the influence of the $H_2$ flow ratio on the properties of the AZO films, the $H_2$ flow ratio was changed from 0.5% to 2%. As a result, the AZO films, deposited with a 1% $H_2$ addition, showed a resistivity of $11.7\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$. When the AZO films were annealed at $300^{\circ}C$ for 1 hour in a hydrogen atmosphere, the resistivity decreased from $11.7\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$ to $5.63\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$. The lowest resistivity of $5.63\;{\times}\;10^{-4}{\Omega}{\cdot}cm$ was obtained by adding 1% hydrogen gas to the deposition and annealing process. The X-ray diffraction patterns of all the films showed a preferable growth orientation in the (002) plane. The spectrophotometer measurements showed that the transmittance of 85% was obtained by the film deposited with the $H_2$ flow ratio of 1% at 940 nm for GaAs/GaAlAs LEDs.