• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.43.2-43.2
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• 2011

Single-walled carbon nanotubes (SWCNT) are transparent in the visible and show conductivity comparable to copper, and are environmentally stable. SWCNT films have high flexibility, conductivity and transparency approaching that indium tin oxide (ITO), and can be prepared inexpensively without vacuum equipment. Transparent conducting Films (TCF) of SWCNTs has the potential to replace conventional transparent conducting oxides (TCO, e.g. ITO) in a wide variety of optoelectronic devices, energy conversion and photovoltaic industry. However, the sheet resistance of SWCNT films is still higher than ITO films. A decreased in the resistivity of SWCNT-TCFs would be beneficial for such an application. We fabricated SWCNT sheet with $KAuBr_4$ on PET substrate. Arc-discharge SWCNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWCNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with AuBr4-, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. $HNO_3$ treated SWCNT films with Au nano-particles have the lowest 61 ${\Omega}$/< sheet resistance in the 80% transmittance. Sheet resistance was decreased due to the increase of the hole concentration at the washed SWCNT surface by p-type doping of $AuBr_4{^-}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.249-249
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• 1999

GaN과 같은 III-nitride 반도체 관한 식각 기술의 연구는 blue-emitting laser diode(LD)를 위한 경면(mirror facet)의 형성뿐만아니라 새로운 display 용도의 light emitting diodes (LED), 고온에서 작동되는 광전소자 제조 등에도 그 중요성이 증대되고 있다. 최근에는 III-nitride 물질의 높은 식각속도와 미려하고 수직한 식각형상을 이루기 위하여 ECR(Electron Cyclotron Resonance)이나 ICP(Inductively Coupled Plasma)와 같은 고밀도 플라즈마 식각과 CAIBE(Chemically assisted ion beam etching)를 이용한 연구가 진행되고 있다. 현재 제조되어 지고 있는 LED 및 LD와 같은 광소자의 구조의 대부분은 p-GaN/AlGaN/InGaN(Q.W)/AlGaN/n-GaN 와 같은 여러 층의 형태로 이루어져 있다. 이중 InGaN는 광소자나 전자소자의 특성에 영향을 주는 가장 중요한 부분으로써 현재까지 보고된 식각연구는 undoped GaN에 대부분 집중되고 있고 이에 비해 소자 특성에 핵심을 이루는 InGaN의 식각특성에 관한 연구는 미흡한 상황이다. 본 연구에서는 고밀도 플라즈마원인 ICP 장비를 이용하여 InGaN를 식각하였고, 식각에는 Cl2/CH4, Cl2/Ar 플라즈마를 사용하였다. InGaN의 식각특성에 영향을 미치는 플라즈마의 특성을 관찰하기 위하여 quadrupole mass spectrometry(QMS)와 optical emission spectroscopy(PES)를 사용하였다. 기판 온도는 5$0^{\circ}C$, 공정 압력은 5,Torr에서 30mTorr로 변화시켰고 inductive power는 200~800watt, bias voltage는 0~-200voltage로 변화시켰으며 식각마스크로는 SiO2를 patterning 하여 사용하였다. n-GaN, p-GaN 층 이외에 광소자 제조시 필수적인 InGaN 층을 100% Cl2로 식각한 경우에 InGaN의 식각속도가 GaN에 비해 매우 낮은 식각속도를 보였다. Cl2 gas에 소량의 CH4나 Ar gas를 첨가하는 경우와 공정압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%Ar 플라즈마에서 공정 압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%CHF3 와 Cl2/10%Ar 플라즈마에서 공정압력을 15mTorr로 감소시키는 경우 InGaN과 GaNrks의 선택적인 식각이 가능하였다. InGaN의 식각속도는 Cl2/Ar 플라즈마의 이온에 의한 Cl2/CHF3(CH4) 플라즈마에서의 CHx radical 형성에 의하여 증가하는 것으로 사료되어 진다.

• 한국수산과학회지
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• 제52권6호
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• pp.631-636
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• 2019

Fish bone-based calcium products are currently receiving much attention among high value-added industries involving calcium. Industrial processing of fish products yields unused fish parts including bones, which could be used as marine health foods to enhance the economic and environmental benefits of fish production. The ultimate goal of this study is to develop the high value-added fisheries products fortified with fish bones supplementing calcium. We here explored the physical and chemical softening methods of the fish bones to enhance texture of the fish products with a high degree of calcium absorption rates. The eluted calcium from the fish bone was quantified with the inductively coupled plasma optical emission spectrometry (ICP-OES). The characteristics of the softened fish bones were determined by the laser diffraction particle size analysis, texture profile analysis, and volatile organic compounds (VOCs) analysis. As the result, the optimized softening method of fish bone was established when Theragra chalcogramma bone was treated twice with the pressurized high temperature (110-120℃ and 1.0-1.5 kg/cm²). The produced softened fish bone turned out to be suitable for the food additives with low particle sizes, low hardness values, and negligible VOCs responsible for the unpleasant flavors.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.619-619
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• 2009

Recently, silica nanostructures are widely used in various applicationary areas such as chemical sensors, biosensors, nano-fillers, markers, catalysts, and as a substrate for quantum dots etc, because of their excellent physical, chemical and optical properties. Additionally, these days, semiconductor silica and silicon with high purity is a key challenge because of their metallurgical grade silicon (MG-Si) exhibit purity of about 99% produced by an arc discharge method with high cast. Tremendous efforts are being paid towards this direction to reduce the cast of high purity silicon for generation of photovoltaic power as a solar cell. In this direction, which contains a small amount of impurities, which can be further purified by acid leaching process. In this regard, initially the low cast rice-husk was cultivated from local rice field and washed well with high purity distilled water and were treated with acid leaching process (1:10 HCl and $H_2O$) to remove the atmospheric dirt and impurity. The acid treated rice-husk was again washed with distilled water and dried in an oven at $60^{\circ}C$. The dried rice-husk was further annealed at different temperatures (620 and $900^{\circ}C$) for the formation of silica nanospheres. The confirmation of silica was observed by the X-ray diffraction pattern and X-ray photoelectron spectroscopy. The morphology of obtained nanostructures were analyzed via Field-emission scanning electron microscope(FE-SEM) and Transmission electron microscopy(TEM) and it reveals that the size of each nanosphares is about 50-60nm. Using the Inductively coupled plasma mass spectrometry(ICP-MS), Silica was analyzed for the amount of impurities.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.61-61
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• 2018

듀플렉스 스테인리스강은 페라이트와 오스테나이트 상이 공존하는 특징을 갖는다. 그러한 구조에 의해서 페라이트와 오스테나이트상의 장점을 동시에 갖는 특성이 있다. 높은 강도와, 우수한 내식성, 응력 부식 균열 그리고 낮은 니켈의 함량 때문에 안정적인 가격을 갖는 장점을 갖기 때문에 운송, 기름과 가스, 해양플랜트, 건축 그리고 높은 강도와 우수한 내식성이 필요한 분야에서 수요가 증가할 것으로 사료된다. 이러한 듀플렉스 스테인리스강의 형성에서 페라이트와 오스테나이트상의 균형과 내식성을 개선하기 위해 질소가 첨가된다[1,2]. 본 연구는 저니켈 듀플렉스 스테인리스강(STS 329 FLD)의 공식 형성 과정에서 질소의 함량이 공식 형성과 내식특성에 미치는 영향을 동전위분극, XPS(X-ray Photoelectron Spectroscopy) 그리고 GDOES(Glow Discharge Optical Emission Spectrometry)를 이용하여 규명하였다. GDOES를 이용하여 깊이별 원소 분포를 정량적으로 비교한 결과, 부동태막에서 질소는 기저에 비하여 증가하였고, 질소의 함량이 증가함에 따라 wt.% 또한 증가하였다. 이러한 부동태막의 깊이별 원소 분포특성이 내식특성과 공식의 크기에 미치는 영향을 동전위분극을 이용하였다. 질소의 함량이 증가하였을 경우, 부식전위는 증가하였으며, 부식전류는 감소하였다. 또한 부동태전류가 감소한 것을 확인할 수 있었다. 이러한 차이의 원인을 확인하기 위하여 XPS를 이용하여 질소의 화학적 상태를 확인하였다. 질소는 암모니아의 형태로 존재하는 것으로 확인되었다. 암모니아 상태로 부동태막에 존재함에 따라 공식이 형성될 때, 암모늄 화함물을 형성하여 공식 내부의 산성도를 낮춤으로써 공식의 형성이 억제된 것으로 사료된다. 또한 공식 이후의 표면을 관찰 할 경우 질소의 함량이 증가함에 따라 표면에서 공식이 거의 관찰되지 않았다.

• 한국축산식품학회지
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• 제23권4호
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• pp.356-360
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• 2003

우유의 셀렌 함량을 측정하기 위하여 ICP-OES를 이용한 분석법을 확립하였다. 시료전처리는 우유의 수분을 제거한 후 질산과 과산화수소를 이용하여 유기성분을 제거하였고, 최종적으로 다시 과산화수소로 미량의 유기성분을 산화시켰다. 셀렌은 휘발성 무기성분이므로 전처리된 용액에 NaBH$_4$와 HCl을 이용하여 셀렌의 수소화(hydride)반응으로 끓는점을 높이고 분석감도를 향상시켰다. 수소화 반응 중 HCl 농도의 최적조건은 2 mol/L에서 최대 cps(counter per sec)로 나타났고, NaBH$_4$와 시료 유속의 최적조건은 각각 1.5%와 1.2mL/min인 것으로 나타났다. 따라서 위의 HG 조건이 시료 메트릭스에 따른 간섭효과를 제거하였으며, 최적의 정량조건임을 알 수 있었다. 이 조건으로 표준물질을 이용한 셀렌의 직선성 상관계수(R)는 0.98로서 우유에 함유된 셀렌 분석에 적용할 수 있었다. Standard addition method를 이용한 회수율은 10 ppb에서 88.0% 이었고, 첨가된 농도가 증가할수록 회수율 및 RSD는 정확성 및 정밀성을 확보할 수 있었다.

• Journal of Electrochemical Science and Technology
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• 제9권1호
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• pp.60-68
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• 2018

In aqueous rechargeable lithium ion batteries, $LiV_3O_8$ exhibits obviously enhanced electrochemical performance after $AlF_3$ surface modification owing to improved surface stability to fragile aqueous electrolyte. The cycle life of $LiV_3O_8$ is significantly enhanced by the presence of an $AlF_3$ coating at an optimal content of 1 wt.%. The results of powder X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, inductively coupled plasma-optical emission spectrometry, and galvanostatic charge-discharge measurements confirm that the electrochemical improvement can be attributed mainly to the presence of $AlF_3$ on the surface of $LiV_3O_8$. Furthermore, the $AlF_3$ coating significantly reduces vanadium ion dissolution and surface failure by stabilizing the surface of the $LiV_3O_8$ in an aqueous electrolyte solution. The results suggest that the $AlF_3$ coating can prevent the formation of unfavorable side reaction components and facilitate lithium ion diffusion, leading to reduced surface resistance and improved surface stability compared to bare $LiV_3O_8$ and affording enhanced electrochemical performance in aqueous electrolyte solutions.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.161-166
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• 2021

Errors in the semiconductor process are generated by a change in the state of the equipment, and errors usually arise when the state of the equipment changes or when parts that make up the equipment have flaws. In this investigation, we anticipated that aging of the mass flow controller in the plasma enhanced chemical vapor deposition SiO2 thin film deposition method caused a minute flow rate shift. In seven cases, fourier transformation infrared film quality analysis of the deposited thin film was used to characterize normal and pathological processes. The plasma condition was monitored using optical emission spectrometry data as the flow rate changed during the procedure. Preprocessing was used to apply the collected OES data to the artificial immune system algorithm, which was then used to process diagnosis. Through comparisons between datasets, the learning algorithm compared classification accuracy and improved the method. It has been confirmed that data characterized as a normal process and abnormal processes with differing flow rates may be discriminated by themselves using the artificial immune system data mining method.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.59-59
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• 1999

In this study, planer inductively coupled $Cl_2$ based plasmas were used to etch InGaN and the effects of plasma conditions on the InGaN etch properties have been characterized using quadrupole mass spectrometry(QMS) and optical emission spectroscopy(OES). As process conditions used to study the effects of plasma characteristics on the InGaN etch properties, $Cl_2$ was used as the main etch gas and $CHF_3,{\;}CH_4$, and Ar were used as additive gases. Operational pressure was varied from SmTorr to 3OmTorr, inductive power and bias voltage were varied from 400W to 800W and -50V to -250V, respectively while the substrate temperature was fixed at 50 centigrade. For the $Cl_2$ plasmas, selective etching of GaN to InGaN was obtained regardless of plasma conditions. The small addition of $CHF_3$ or Ar to $Cl_2$ and the decrease of pressure generally increased InGaN etch rates. The selective etching of InGaN to GaN could be obtained by the reduction of pressure to l5mTorr in $CI_2/IO%CHF_3{\;}or{\;}CI_2/IO%Ar$ plasma. The enhancement of InGaN etch rates was related to the ion bombardment for $CI_2/Ar$ plasmas and the formation of $CH_x$ radicals for $CI_2/CHF_3(CH_4)$ plasmas.