• Title/Summary/Keyword: Optical concentration

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Effect of boron doping on the chemical and physical properties of hydrogenated amorphous silicon carbide thin films prepared by PECVD (플라즈마 화학증착법으로 제조된 수소화된 비정질 탄화실리콘 박막의 물성에 대한 붕소의 도핑효과)

  • 김현철;이재신
    • Journal of the Korean Vacuum Society
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    • v.10 no.1
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    • pp.104-111
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    • 2001
  • B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4, CH_4,\;and\; B_2H_6$. Physical and chemical properties of a-SiC:H films grown with varing the ratio of $B_2H_6/(SiH_4+CH_4)$ were characterized with various analysis methods including scanning electron microscopy (SEM), X-ray diffractometry (XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, secondary ion mass spectroscopy (SIMS), UV absorption CH_4spectroscopy and electrical conductivity measurements. With the B-doping concentration, the doping efficiency and the micro-crystallinity were decreased and the film became amorphous when $B_2H_6/(SiH_4{plus}CH_4)$ was over $5{\times}10^{-3}$. The addition of $B_2H_6$ gas during deposition decreased the H content in the film by lowering the quantity of Si-C-H bonds. Consequently, the optical band gap and the activation energy of a-SiC:H films were decreased with increasing the B-doping level.

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Synthesis and Photoluminescence Properties of Red Phosphors Gd1-xAl3(BO3)4:Eux3+ (적색 형광체 Gd1-xAl3(BO3)4:Eux3+의 합성과 발광 특성)

  • Cho, Shin-Ho;Cho, Seon-Woog
    • Korean Journal of Materials Research
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    • v.22 no.3
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    • pp.145-149
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    • 2012
  • Red phosphors of $Gd_{1-x}Al_3(BO_3)_4:{Eu_x}^{3+}$ were synthesized by using the solid-state reaction method. The phase structure and morphology of the phosphors were measured using X-ray diffraction (XRD) and field emission-scanning electron microscopy (FE-SEM), respectively. The optical properties of $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors with concentrations of $Eu^{3+}$ ions of 0, 0.05, 0.10, 0.15, and 0.20 mol were investigated at room temperature. The crystals were hexagonal with a rhombohedral lattice. The excitation spectra of all the phosphors, irrespective of the $Eu^{3+}$ concentrations, were composed of a broad band centered at 265 nm and a narrow band having peak at 274 nm. As for the emission spectra, the peak wavelength was 613 nm under a 274 nm ultraviolet excitation. The intensity ratio of the red emission transition ($^5D_0{\rightarrow}^7F_2$) to orange ($^5D_0{\rightarrow}^7F_1$) shows that the $Eu^{3+}$ ions occupy sites of no inversion symmetry in the host. In conclusion, the optimum doping concentration of $Eu^{3+}$ ions for preparing $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors was found to be 0.15 mol.

Effect of Deposition Temperature on Structural and Electrical Properties of Ga-Doped ZnO for Transparent Electrode of Thin Film Solar Cells (박막 태양전지용 투명 전극을 위한 Ga 도핑된 ZnO의 증착 온도에 따른 구조 및 전기 특성 변화)

  • Son, Chang-Sik
    • Korean Journal of Materials Research
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    • v.21 no.3
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    • pp.144-148
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    • 2011
  • We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RF magnetron sputtering at various deposition temperatures from 100 to $500^{\circ}C$. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to deposition temperature. The grain size increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. The dependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivity of GZO thin film decreases with the increasing deposition temperature up to $300^{\circ}C$ and then decreases up to $500^{\circ}C$. GZO thin film shows the lowest resistivity of $4.3{\times}10^{-4}\;{\Omega}cm$ and highest electron concentration of $1.0{\times}10^{21}\;cm^{-3}$ at $300^{\circ}C$. The mobility of GZO thin films increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. GZO thin film shows the highest resistivity of 14.1 $cm^2/Vs$. The transmittance of GZO thin films in the visible range is above 87% at all the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thin film solar cells.

Improved Conductivities of SWCNT Transparent Conducting Films on PET by Spontaneous Reduction

  • Min, Hyeong-Seop;Kim, Sang-Sik;Lee, Jeon-Guk
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.43.2-43.2
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    • 2011
  • Single-walled carbon nanotubes (SWCNT) are transparent in the visible and show conductivity comparable to copper, and are environmentally stable. SWCNT films have high flexibility, conductivity and transparency approaching that indium tin oxide (ITO), and can be prepared inexpensively without vacuum equipment. Transparent conducting Films (TCF) of SWCNTs has the potential to replace conventional transparent conducting oxides (TCO, e.g. ITO) in a wide variety of optoelectronic devices, energy conversion and photovoltaic industry. However, the sheet resistance of SWCNT films is still higher than ITO films. A decreased in the resistivity of SWCNT-TCFs would be beneficial for such an application. We fabricated SWCNT sheet with $KAuBr_4$ on PET substrate. Arc-discharge SWCNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWCNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with AuBr4-, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. $HNO_3$ treated SWCNT films with Au nano-particles have the lowest 61 ${\Omega}$/< sheet resistance in the 80% transmittance. Sheet resistance was decreased due to the increase of the hole concentration at the washed SWCNT surface by p-type doping of $AuBr_4{^-}$.

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An Analysis of Light Induced Degradation with Optical Source Properties in Boron-Doped P-Type Cz-Si Solar Cells (광원의 특성에 따른 Boron-doped p-type Cz-Si 태양전지의 광열화 현상 분석)

  • Kim, Soo Min;Bae, Soohyun;Kim, Young Do;Park, Sungeun;Kang, Yoonmook;Lee, Haeseok;Kim, Donghwan
    • Korean Journal of Materials Research
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    • v.24 no.6
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    • pp.305-309
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    • 2014
  • When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minority-carrier diffusion-length with internal quantum efficiency (IQE) analysis.

PAHs Formation Characteristics and Fullerenes $(C_{60},\;C_{70})$ Synthesis in a Low-Pressure $C_6H_6/Ar/O_2$ Flame (저압 $C_6H_6/Ar/O_2$ 화염에서 PAHs 생성 특성 및 플러렌$(C_{60},\;C_{70})$ 합성에 대한 연구)

  • Lee, G.W.;Kim, Y.W.;Hwang, J.;Jrung, J.;Choi, M.
    • Journal of the Korean Society of Combustion
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    • v.7 no.4
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    • pp.36-44
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    • 2002
  • Carbon molecules with closed-cage structures are called fullerenes $(C_{60},\;C_{70})$, whose applications include super-conductors, sensors, catalysts, optical and electronic device, polymer composites, and biological and medical materials. The synthesis of fullerenes has been recently studied with low-pressure benzene/argon/oxygen flames. The formation of fullerene is known as molecular weight growth processes of PAHs (polycyclic aromatic hydrocarbon). This study presents results of PAHs and fullerene measurements performed in a low-pressure benzene/argon/oxygen normal co-flow laminar diffusion flame. Through the central tube of the burner, benzene vapors carried by argon are injected. The benzene vapors are made in a temperature-controlled bubbler. The burner is located in a chamber, equipped with a sampling system for direct collection of condensable species from the flame, and exhausted to a vacuum pump. Samples of the condensable are analyzed by HPLC (High Performance Liquid Chromatography) to determine the yields of PAHs and fullerene. Also, we computed mole fraction of fullerene and PAHs in a nearly sooting low pressure premixed, one-dimensional benzene/argon/oxygen flame (equivalence ratio ${\Phi}=2.4$, pressure=5.33kPa). The object of computation was to investigate the formation mechanism of fullerenes and PAHs. The computations were performed with CHEMKIN/PREMIX. As a result of this study, fullerenes were synthesized in a low pressure (20torr) $C_6H_6/Ar/O_2$ flames and the highest concentration of fullerene was detected just above the visible surface of a flame.

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Characterization Study of Various Solvents of Paraloid B72 for Bronze Artifacts Conservation by Surface Analysis (표면분석을 활용한 청동문화재 보존처리용 Paraloid B72의 용제별 특성 연구)

  • Cho, Hyun-kyung;Cho, Nam-Chul
    • Journal of Conservation Science
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    • v.22
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    • pp.61-76
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    • 2008
  • We examined characterizations of Paraloid B72 films when it dissolved in four different solvents-acetone, MEK, toluene and xylene. The surface before and after coating were observed by optical microscope and AFM. Thickness and contact angle of films was measured and surface energy was calculated for grasping properties of films. We also tested adhesive strength of films by scratch tester and durability of films by performing yellowing test. The result was that xylene has better coating property than other solvents. Because 10% Paraloid B72 in xylene film is even, non-mottled, thin, stabilized in yellowish and has proper hydrophobic, we confirmed xylene is good solvent for bronze artifact conservation. However, other tests will need for finding appropriate concentration of Paraloid B72.

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A Study on Electrical, Optical Properties of GZO Thin Film with Target Crystalline (GZO 타겟 결정성에 따른 박막의 전기적 광학적 특성)

  • Lee, Kyu-Ho;Kim, Kyung-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.2
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    • pp.114-120
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    • 2012
  • In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature $700^{\circ}C$, $800^{\circ}C$, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder's structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a $Ga_2O_3$ content of 3 wt.% at input power of 45W, the lowest resistivity of $9.967{\times}10^{-4}{\Omega}{\cdot}cm$ ($700^{\circ}C$) and $9.846{\times}10^{-4}{\Omega}{\cdot}cm$ ($800^{\circ}C$) was obtained. the carrier concentration and mobility were $4.09{\times}10^{20}cm^{-3}$($700^{\circ}C$), $4.12{\times}10^{20}cm^{-3}$($800^{\circ}C$) and $15.31cm^2/V{\cdot}s(700^{\circ}C)$, $12.51cm^2/V{\cdot}s(800^{\circ}C)$, respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.

Interaction of Cytochrome c and Cytochrome c Oxidase Studied by Spin-Label EPR and Site-Directed Mutagenesis

  • Park, Hee-Young;Chun, Sun-Bum;Han, Sang-Hwa;Lee, Kwang-Soon;Kim, Kyung-Hoon
    • BMB Reports
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    • v.30 no.6
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    • pp.397-402
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    • 1997
  • A thiol-specific spin label was attached to cysteine-102 of yeast cytochrome c and electron paramagnetic resonance (EPR) spectra were measured as a function of added cytochrome c oxidase concentration. The intensity decreased due to line broadening as cytochrome c formed a complex with cytochrome c oxidase and reached a minimum when the ratio of cytochrome c to cytochrome c oxidase became one. Replacement of either Lys-72 or Lys-87 of cytochrome c by Glu did not result in a significant change in binding affinity. Interestingly the K72E mutant, unlike K87E, had a much lower rate of electron transfer than the wild type. These results indicate that many positively charged residues as a group participate in complex formation but Lys-72 might be important for cytochrome c to be locked in an orientation for an efficient electron transfer. A stoichiometry of 1 was also confirmed by optical absorption of the cytochrome c-cytochrome c oxidase complex which had been run through a gel chromatography cloumn to remove unbound cytochrome c. The EPR spectrum of this 1:1 complex, however, was a mixture of two components. This explains a biphasic kinetics for a single binding site on cytochrome c oxidase without invoking conformational transition.

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A Study on the Possibility of Produced by Supercritical Fluid Extraction from Lycii Fructus Seed for Cosmetic Ingredients (구기자 종자 초임계유체 추출물의 화장품소재로서의 가능성 평가)

  • Kim, Bo-Ae
    • Journal of the Korean Applied Science and Technology
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    • v.34 no.3
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    • pp.623-630
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    • 2017
  • The purpose of this study was to investigate the possibility of applying cosmetic material about extracted from Lycii Fructus seed supercritical fluid. This study was conducted to evaluate the anti-melanogenesis effect and antimicrobial activity about the extracts from Lycii Fructus seed. These researches studied for emulsion physical stability of pH, viscosity, particle size from emulsion containing Lycii Fructus seed extract. As a result, the supercritical fluid extract from Lycii Fructus seed significantly inhibited melanin synthesis by 81.86 % at the concentration $750{\mu}g/mL$. Antimicrobial effects of extract was determined against Staphylococcus aureus, Candida albicans, Escherichia coli. except by Staphylococcus epidermidis. The physical stability of viscosity and pH on the emulsion containing Lycii Fructus seed extract were stable for 28 days. Emulsion containing Lycii Fructus seed extract did not change particles at observation into optical microscope. These results suggest that extracts from Lycii Fructus seed may have value as the potential cosmetic formulation.