• 제목/요약/키워드: Optical and structural properties

검색결과 931건 처리시간 0.032초

미스트 화학기상증착법을 이용한 c면, a면, m면, r면 사파이어 기판 위의 산화갈륨 박막 성장 연구 (Growth of Gallium Oxide Thin Film on c-, a-, m-, r-Plane Sapphire Substrates Using Mist Chemical Vapor Deposition System )

  • 성기려;조성호;김경호;신윤지;정성민;김태규;배시영
    • 한국전기전자재료학회논문지
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    • 제36권1호
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    • pp.74-80
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    • 2023
  • Gallium oxide (Ga2O3) thin films were grown on c-, a-, m-, r-plane sapphire substrates using a mist chemical vapor deposition system. Various growth temperature range of 400~600℃ was applied for Ga2O3 thin film deposition. Then, several structural properties were characterized such as film thickness, crystal phase, lattice orientation, surface roughness, and optical bandgap. Under the certain growth temperature of 500℃, all grown Ga2O3 featured rhombohedral crystal structures and well-aligned preferred orientation to sapphire substrate. The films grown on c-and r-plane sapphire substrates, showed low surface roughness and large optical bandgap compared to those on a-and m-plane substrates. Therefore, various sapphire orientation can be potentially applicable for future Ga2O3-based electronics applications.

고주파 마그네트론 스퍼터링법에 의해 제조된 TO:F 투명도전막의 제조 및 특성( I ) (Fabrication and Characteristics of TO:F Thin Film Deposited by RF Magnetron Sputtering( I ))

  • 박기철;김정규
    • 센서학회지
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    • 제3권2호
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    • pp.65-73
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    • 1994
  • 고주파 마그네트론 스퍼터링법에 의해 TO:F($SnO_{2}:F$)막을 제조하고 막의 구조적, 전기적 및 광학적 특성을 조사하였다. TO:F막은 $SnF_{2}$를 무게비로 첨가한 $SnO_{2}$ 타겟을 사용하여 증착되었으며 투명도전막으로서의 최적증착조건은 타겟내의 $SnF_{2}$의 첨가량이 15wt.% 고주파출력이 150W, 기판온도가 $150^{\circ}C$ 및 반응실내의 동작압력이 2mmTr일 때이다. 최적 증착조건에서 저항률은 $9{\times}10^{-4}{\Omega}{\cdot}cm$였으며 광투과도는 550nm에서 88%였다. 광투과도로부터 구해진 광학적 밴드갭은 타겟내에 $SnF_{2}$가 첨가되지 않은 경우 및 15wt.% 첨가된 경우에 각각 3.84eV 및 3.9eV로 나타났다. X-선회절분석의 결과 TO막 및 TO:F막은 (101),(200)방향으로 성장한 tetragonal rutile구조를 가지고 있었다.

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High Transparent, High Mobility MoO3 Intergraded InZnO Films for Use as a Transparent Anode in Organic Solar cells

  • Kim, Hyo-Jung;Kang, Sin-Bi;Na, Seok-In;Kim, Han-Ki
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.343-343
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    • 2014
  • We reported on the electrical, optical, structural and morphological properties fabricated by co-sputtering for use as an anode for organic solar cells (OSCs). By adjusting RF and DC power of $MoO_3$ and IZO targets during co-sputtering, we fabricated the $MoO_3$-IZO electrode with graded content of the $MoO_3$ on the IZO films. At optimized $MoO_3$ thickness of 20 nm, the $MoO_3$ graded IZO electrode showed a higher mobility ($33cm^2/V-Sec$) than directly deposited $MoO_3$ on IZO film ($26cm^2/V-Sec$). At visible range (400nm~800nm), optical transmittance of the $MoO_3$ graded IZO electrode is higher than that of directly deposited $MoO_3$ on IZO film. High mobility of $MoO_3$ graded on IZO is attributed to less interface scattering between $MoO_3$ and IZO. To investigate the feasibility of $MoO_3$ graded IZO films, we fabricated conventional P3HT:PCBM based OSCs with $MoO_3$ graded IZO as a function of MoO3 thickness. The OSC fabricated on the $MoO_3$ graded IZO anode showed a fill factor of 66.53%, a short circuit current of $8.121mA/cm^2$, an open circuit voltage of 0.592 V, and a power conversion efficiency of 3.2% comparable to OSC fabricated on ITO anode and higher than directly deposited $MoO_3$ on IZO film. We suggested possible mechanism to explain the high performance of OSCs with a $MoO_3$ graded IZO.

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스퍼터법을 이용한 메탈 전구체기반의 Cu2SnS3 (CTS) 박막 태양전지 제조 및 특성 평가 (Fabrication of Cu2SnS3 (CTS) thin Film Solar Cells by Sulfurization of Sputtered Metallic Precursors)

  • 이주연;김인영;;문종하;김진혁
    • Current Photovoltaic Research
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    • 제3권4호
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    • pp.135-139
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    • 2015
  • $Cu_2SnS_3$ (CTS) based thin film solar cells (TFSCs) are of great interest because of its earth abundant, low-toxic and eco-friendly material with high optical absorption coefficient of $10^4cm^{-1}$. In this study, the DC sputtered precursor thin films have been sulfurized using rapid thermal annealing (RTA) system in the graphite box under Ar gas atmosphere for 10 minute. The systematic variation of sulfur powder during annealing process has been carried out and their effects on the structural, morphological and optical properties of CTS thin films have been investigated. The preliminary power conversion efficiency of 1.47% with a short circuit current density of $33.9mA/cm^2$, an open circuit voltage of 159.7 mV, and a fill factor of 27% were obtained for CTS thin film annealed with 0.05g of S powder, although the processing parameter s have not yet been optimized.

PRAM용 Cu-도핑된 Ge8Sb2Te11 박막의 특성 (Characteristics of Cu-Doped Ge8Sb2Te11 Thin Films for PRAM)

  • 김영미;공헌;김병철;이현용
    • 한국전기전자재료학회논문지
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    • 제32권5호
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    • pp.376-381
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    • 2019
  • In this work, we evaluated the structural, electrical and optical properties of $Ge_8Sb_2Te_{11}$ and Cu-doped $Ge_8Sb_2Te_{11}$ thin films prepared by rf-magnetron reactive sputtering. The 200-nm-thick deposited films were annealed in a range of $100{\sim}400^{\circ}C$ using a furnace in an $N_2$ atmosphere. The amorphous-to-crystalline phase changes of the thin films were investigated by X-ray diffraction (XRD), UV-Vis-IR spectrophotometry, a 4-point probe, and a source meter. A one-step phase transformation from amorphous to face-centered-cubic (fcc) and an increase of the crystallization temperature ($T_c$) was observed in the Cu-doped film, which indicates an enhanced thermal stability in the amorphous state. The difference in the optical energy band gap ($E_{op}$) between the amorphous and crystalline phases was relatively large, approximately 0.38~0.41 eV, which is beneficial for reducing the noise in the memory devices. The sheet resistance($R_s$) of the amorphous phase in the Cu-doped film was about 1.5 orders larger than that in undoped film. A large $R_s$ in the amorphous phase will reduce the programming current in the memory device. An increase of threshold voltage ($V_{th}$) was seen in the Cu-doped film, which implied a high thermal efficiency. This suggests that the Cu-doped $Ge_8Sb_2Te_{11}$ thin film is a good candidate for PRAM.

RF 마그네트론 스퍼터를 이용한 ATO 박막의 열처리 효과 (The effects of annealing of the ATO films prepared by RF magnetron sputtering)

  • 박세용;이성욱;박미주;김영렬;홍병유
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.270-271
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    • 2008
  • Antimony (6 wt%) doped tin oxide (ATO) films to improve conductivity were deposited on 7059 coming glass by RF magnetron sputtering method for application to transparent electrodes. The ATO film was deposited at a working pressure of 5 mTorr and RF power of 175 W. We investigated the effects of the post-annealing temperature on structural, electrical and optical properties of the ATO films. The films were annealed at temperatures ranging from $300^{\circ}C$ to $600^{\circ}C$ in step of $100^{\circ}C$ using RTA equipment in vacuum ambient. X-ray diffraction (XRD) measurements showed the ATO films to be crystallized with a strong (101) preferred orientation as the annealing temperature increased. Electrical resistivity decreased significantly with annealing temperatures up to $600^{\circ}C$. ATO film annealed at temperature of $600^{\circ}C$ showed the lowest resistivity of $5.6\times10^{-3}\Omega$-cm. Optical transmittance increased significantly with annealing temperatures up to $600^{\circ}C$. The highest transmittance was 90.8 % in the visible range from 400 to 800 nm.

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Study on the Improvement of the Image Analysis Speed in the Digital Image Correlation Measurement System for the 3-Point Bend Test

  • Choi, In Young;Kang, Young June;Hong, Kyung Min;Kim, Seong Jong;Lee, Gil Dong
    • Journal of the Optical Society of Korea
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    • 제18권5호
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    • pp.523-530
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    • 2014
  • Machine material and structural strain are critical factors for appraising mechanical properties and safety. Particularly in three and four-point bending tests, which appraise the deflection and flexural strain of an object due to external force, measurements are made by the crosshead movement or deflection meter of a universal testing machine. The Digital Image Correlation (DIC) method is one of the non-contact measurement methods. It uses the image analyzing method that compares the reference image with the deformed image for measuring the displacement and strain of the objects caused by external force. Accordingly, the advantage of this method is that the object's surface roughness, shape, and temperature have little influence. However, its disadvantage is that it requires extensive time to compare the reference image with the deformed image for measuring the displacement and strain. In this study, an algorithm is developed for DIC that can improve the speed of image analysis for measuring the deflection and strain of an object caused by a three-point bending load. To implement this algorithm for improving the speed of image analysis, LabVIEW 2010 was used. Furthermore, to evaluate the accuracy of the developed fast correlation algorithm, the deflection of an aluminum specimen under a three-point bending load was measured by using the universal test machine and DIC measurement system.

Optical Properties of Oxotitanium (Ⅳ) Meso-tetrakis(4-sulfonatophenyl)porphyrin Intercalated into the Layered Double Hydroxides (LDH) Studied by Laser Spectroscopy

  • Ryu, Su-Young;Yoon, Min-Joong;Choy, Jin-Ho;Hwang, Sung-Ho;Frube, Akihiro;Asahi, Tsuyoshi;Hiroshi, Masuhara
    • Bulletin of the Korean Chemical Society
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    • 제24권4호
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    • pp.446-452
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    • 2003
  • Some new nanohybrid materials have been synthesized by intercalating the oxotitanium(IV) meso-tetrakis(4- sulfonatophenyl) porphyrin$(O=Ti^{(IV)} TSPP)$ into the Zn/Al layered double hydroxides (LDHs), and their structures and photophysical properties have been investigated by various laser spectroscopic techniques. According to the XRD pattern of the synthesized nanohybrid materials, the macrocycle plane of $O=Ti^{(IV)}$ TSPP are grafted perpendicular to the LDH layers. The $O=Ti^{(IV)}$ TSPP-intercalated LDH exhibits band broadening of the absorption spectrum and a blue shift of Q-band as compared to that observed in solution. Resonance Raman spectral measurements demonstrate that the positively charged LDHs give rise to a slight decrease of the electronic density of the porphyrin ring accompanying a small change of the electronic distribution of the $O=Ti^{(IV)}$ TSPP. Consequently the LDH environment affects the energies of the two highest occupied molecular orbitals (HOMOs) of the $O=Ti^{(IV)}$) TSPP, $a_{1u}$ and $a_{2u}$, producing a mixed orbital character. Being consistent with these electronic structural changes of $O=Ti^{(IV)}$ TSPP in LDH, both the fluorescence spectral change and the fsdiffuse reflectance transient measurements imply that the photoexcitation of the $O=Ti^{(IV)}$ TSPP intercalated into LDH undergoes fast relaxation to the O=Ti(IV) $TSPP^+-LDH^- $charge transfer (CT) state within a few picoseconds, followed by a photoinduced electron transfer between the O=Ti(IV) TSPP and LDHs with a rate constant greater than %1×10^{10}S^{-1}$. No evidence is found for back electron transfer. In conclusion, the $O=Ti^{(IV)}$ TSPP intercalated LDH seems to be a possible candidate for an artificial reaction center for an efficient solar energy conversion system.

Ag-첨가 Ge2Sb2Te5 박막의 물성 및 고속 결정화 (Characteristics of Ag-added Ge2Sb2Te5 Thin Films and the Rapid Crystallization)

  • 김성원;송기호;이현용
    • 한국전기전자재료학회논문지
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    • 제21권7호
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    • pp.629-637
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    • 2008
  • We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

Hot Wall법에 의한 ZnS 박막의 제작과 특성 (Growth and Characterization of ZnS Thin Films by Hot Wall Method)

  • 이상태
    • 한국항해항만학회지
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    • 제26권1호
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    • pp.120-126
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    • 2002
  • ZnS 박막을 Hot W긴 법에 의해 증발관 온도, 기판온도 및 외부로부터 유황(5)의 공급을 변수로 하여 제작하여 광학적, 결정 구조적 특성을 분석 ·검토하였다 박막의 증착속도는 증발관 온도 및 5 증기압을 높일수록 증가하였으나 기관온도를 높이면 급격히 감소하였다. 박막의 광학적 특성은 증착속도와 밀접하게 관계하고 있다고 사료되며, 실온에서의 금지대 폭은 이론 값보다 작은 3.46∼3.72ev를 나타내어 결정 중에 결함이 존재함을 알 수 있었다. 박막의 구조를 분석한 결과 어느 경우에 있어서나 섬아연광 구조의 (111) 주 배향성을 나타내었으나 회절피크의 강도 및 반치폭으로부터 결정성은 대체로 양호하지 못했음을 알았다. 그러나, 기판온도 또는 5 공급 등의 제작조건에 따라 광학적, 결정적 특성이 개선되었다.