• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.243-244
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• 2012

산화아연 나노구조를 금을 금속촉매로 사용하여 실리콘 기판위에 기상이동법으로 성장하였다. 성장할 때 소스(source)와 기판 사이의 거리는 5에서 50 mm로 변화를 주며 아르곤과 산소 분위기에서 $900^{\circ}C$로 성장하였다. 산화아연 나노구조의 구조적 및 광학적 특성을 조사하기 위해 field-emission scanning electron microscopy, X-ray diffraction (XRD), 그리고 photoluminescence (PL)를 이용하였다. 산화아연 나노구조는 나노선과 나노입자의 형태로 성장하였다. 산화아연 나노구조의 광학적 특성은 소스와 기판사이의 거리가 가까울수록 향상되었다. 특히, 소스와 기판사이의 거리가 5 mm 일 때, 산화아연 나노선이 관찰되었으며 XRD 와 PL 분석에서 나타난 반가폭 (full width at half maximum)은 $0.061^{\circ}$ 와 96 meV로써 가장 작았다. 산화아연 나노선은 산화아연 나노입자와 비교하여, 결정성 및 광학적 특성이 우수하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.245-246
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• 2012

Al 농도를 0 부터 2 at.% 까지 조절하여 도핑된 $Cd_{0.5}Zn_{0.5}O$ 박막을 석영 기판 위에 성장하였다. Al 도핑된 $Cd_{0.5}Zn_{0.5}O$ 박막의 구조적, 광학적 특성을 조사하기 위해 field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), 그리고 ultraviolet-visible (UV) spectroscopy을 사용하였다. 광학적 밴드갭은 Al 도핑 농도가 증가함에 따라 2.874 (0 at.%), 2.874 (0.5 at.%), 3.029 (1.0 at.%), 3.038 (1.5 at.%), 3.081 eV (2.0 at.%)로 증가하였다. Urbach energy는 도핑 농도에 따라 각각 464 (0 at.%), 585 (0.5 at.%), 571 (1.0 at.%), 600 (1.5 at.%), 470 meV (2.0 at.%)이었다. 또한, Al 농도가 증가함에 따라 $Cd_{0.5}Zn_{0.5}O$ 박막의 표면, 구조적 및 광학적 특성이 크게 변화되었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.47.1-47.1
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• 2011

We report on a direct measurement of two-dimensional chemical and electrical distribution on the surface of photovoltaic Cu(In,Ga)$Se_2$ thin-films using a nano-scale spectroscopic and electrical characterization, respectively. The Raman measurement reveals non-uniformed surface phonon vibration which comes from different compositional distribution and defects in the nature of polycrystalline thin-films. On the other hand, potential analysis by scanning Kelvin probe force microscopy shows a higher surface potential or a small work function on grain boundaries of the thin-films than on the grain surfaces. This demonstrates the grain boundary is positively charged and local built-in potential exist on grain boundary, which improve electron-hole separation on grain boundary. Local electrical transport measurements with scanning probe microscopy on the thin-films indicates that as external bias is increases, local current is started to flow from grain boundary and saturated over 0.3 V external bias. This accounts for carrier behavior in the vicinity of grain boundary with regard to defect states. We suggest that electron-hole separation at the grain boundary as well as chemical and electrical distribution of polycrystalline Cu(In,Ga)$Se_2$ thin-films.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.581-586
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• 2010

The porous Si (PS) was annealed at various temperature in air, argon, and nitrogen atmosphere. Structural and optical properties of the annealed PS were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). It is found that the shape of pore is changed from circle to channel as increasing annealing temperature which was annealed in air and argon atmosphere. In case of PS annealed in nitrogen atmosphere, the shape of pore is changed from channel to circle with increase annealing temperature from 600 to $800^{\circ}C$. The PL peak position is blue-shifted with increasing annealing temperature. As annealing temperature increases, the PL intensity of the PS annealed in argon is decreased but that of the PS annealed in nitrogen is increased. It might be due to the formation of Si-N bonds and it passivates the non-radiative centers which is Si dangling bonds on the surface of the PS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.355-356
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• 2008

In this work, ZnO films doped with different contents of Indium (0.1at.%, 0.3at.%, 0.6at.%, respectively) were deposited on Si (111) substrate that has 1~20 $\Omega$cm by pulsed laser deposition (PLD) at $600^{\circ}C$ for 30min. The thickness of the films are about 250 nm. The structural, optical and electrical properties of the films were investigated using X-ray Diffraction (XRD), Atomic force microscope (AFM), Photoluminescence (PL) and Hall measurement. It has been found that RMS of the films is decreased and grain size is increased with increasing the contents of doped Indium. The results of the Photoluminescence properties were indicated that the films have UV emission about 380nm and shows a little red shitf with increasing contents of doped indium. The result of the Hall measurement shows that the concentration and resisitivity in doped ZnO are as changing as one order, respectively ${\sim}10^{18}/cm^2$, ${\sim}10^{-2}cm{\Omega}cm$.

• 한국재료학회지
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• 제22권10호
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• pp.504-507
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• 2012

Synthesis of RGO (reduced graphene oxide)-CdS composite material was performed through CBD (chemical bath deposition) method in which graphene oxide served as the support and Cadmium Sulfate Hydrate as the starting material. Graphene-based semiconductor photocatalysts have attracted extensive attention due to their usefulness for environmental and energy applications. The band gap (2.4 eV) of CdS corresponds well with the spectrum of sunlight because the crystalline phase, size, morphology, specic surface area and defects, etc., of CdS can affect its photocatalytic activity. The specific surface structure (morphology) of the photocatalyst can be effective for the suppression of recombination between photogenerated electrons and holes. Graphene (GN) has unique properties such as a high value of Young's modulus, large theoretical specific surface area, excellent thermal conductivity, high mobility of charge carriers, and good optical transmittance. These excellent properties make GN an ideal building block in nanocomposites. It can act as an excellent electron-acceptor/transport material. Therefore, the morphology, structural characterization and crystal structure were observed using various analytical tools, such as X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. From this analysis, it is shown that CdS particles were well dispersed uniformly in the RGO sheet. Furthermore, the photocatalytic property of the resulting RGO-CdS composite is also discussed in relation to environmental applications such as the photocatalytic degradation of pollutants. It was found that the prepared RGO-CdS nanocomposites exhibited enhanced photocatalytic activity as compared with that of CdS nanoparticles. Therefore, better efficiency of photodegradation was found for water purification applications using RGO-CdS composite.

• 한국잠사곤충학회지
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• 제36권2호
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• pp.138-146
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• 1994

야잠사, Antheraea pernyi와 Antheraea yamamai의 구조특성을 살폅기 위하여 x-ray 회절 분석, IR 분광법, 편광현미경 관찰, 아미노산 분석을 행하였으며 섬유밀도, 열적 성질 및 동점탄성 성질을 살펴보았다. 그들의 구조 및 물리적 성질에 대한 결과를 가잠사(Bombyx mori)의 특성과 비교하여 요약하면 다음과 같다. 1. 작잠견사와 천잠견사의 아미노산 조성에는 큰 차이가 없었으나 천잠견사의 경우 반응성이 높은 극성아미노산이 다소 많은 것으로 나타났으며 가잠견사의 경우 glycine, 야잠사는 alanine 함량이 가장 많으므로 이들의 견사의 결정구조 특성에 관여되었다고 할 수 있다. 2. 섬유밀도 측정결과 천잠사(1.265~1.301g/㎤), 작잠사(1.308~1.311g/㎤), 가잠사(1.355~1.356g/㎤) 순으로 나타났으며 계산된 결정화도 값도 천잠사(51%), 작잠사(52%), 가잠사(64%) 순으로 나타났다. 3. 작잠사와 천잠사의 x-ray 회절곡선은 차이점이 없이 2$\theta$기호 16.7。와 20.5。에서 (002)면과 (201)면의 특징적인 double peak이 관찰되었으며 가잠사의 경우 2$\theta$기호 20.5。 부근에서 강한 회절 peak이 나타나 결정 구조가 서로 다른 것으로 나타났다. 4. IR spectrum 관찰결과 작잠사와 천잠사는 공히 alanine-alanine sequence에 관계되는 흡수 peak이 나타나며 가잠사는 glycine-alanine sequence에 관련된 group의 흡수 peak이 나타났다. IR 결정화도는 밀도측정에 의한 결과와 동일하게 천잠사(53.9%), 작잠사(54.3%), 가잠사(70.4%) 순으로 계산되었다. 5. 복굴절률은 가잠사의 경우 0.0556에 비하여 야잠사는 0.0216으로 낮은 값을 나타내며 광학배향도값도 가잠사가 2배 정도 높은 것으로 나타났다. 편광현미경에 의한 표면특성은 야잠사의 경우 섬유축방향으로 microfibril들이 줄무늬 모양으로 뚜렷하게 관찰되었다. 6. DSC 및 TGA 분석에 의하여 열분해특성을 살펴본 결과 열분해온도는 가잠사, 작잠사, 천잠사 순으로 350。 부근에서 나타났으며 각각의 구조특성에 따라 열분해가 진행되는 단계가 달리 나타나는 것으로 관찰되어 열안정성의 차이를 보여주었다. 7. Dynamic storage modulus와 loss modulus를 측정하여 얻은 유리전이온도는 가잠사 22$0^{\circ}C$, 천잠사, 24$0^{\circ}C$ 및 작잠사 255$^{\circ}C$의 값을 나타냈으며 이것은 비결정영역의 전이형상이 각 견사의 구조특성에 따라 다른 거동을 하고 있음을 의미한다.

• 천문학회보
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• 제43권1호
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• pp.32.1-32.1
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• 2018

Searching for low surface brightness (LSB) dwarf galaxies in low density environments (isolated and group) can help us resolve the discrepancy between observation and theory known as the 'missing satellite' problem. They are also important to study the evolution of low mass galaxies in these environments. Although the number of dwarfs in such environments is rapidly increasing in many recent studies, it is still not easy to characterize their general properties. Motivated by this, we present preliminary results of our search for LSB dwarf galaxies around 60 nearby galaxies (D<50Mpc) using deep optical images. Imaging data from Maidanak Astronomical Observatory (MAO) in Uzbekistan as a part of Intensive Monitoring Survey of Nearby Galaxies (IMSNG; Im in prep.) and other archival data are used to find previously unknown LSB dwarf galaxies. Extended LSB sources (central surface brightness ${\mu}_0$ > $23mag/arcsec^2$) are first selected in the ${\mu}_0$ - magnitude plane (Rines & Geller 2008). The dwarf galaxy candidates are chosen by visual inspection. We discuss whether these candidates are actual satellite galaxies, by measuring the projected number densities in group environments and in the field. Also, their structural and photometric properties are compared with those of previously discovered dwarf galaxies in the literature.

• 한국표면공학회지
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• 제40권3호
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

• 한국표면공학회지
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• 제43권3호
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• pp.121-126
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• 2010

The PS(porous Si) were fabricated with different anodization time and current density. The structural and optical properties of PS were investigated by SEM(scanning electron microscopy), AFM(atomic force microscopy), and PL(photoluminescence). It is found that the pore size and surface roughness of PS are proportional to the current density. The PL spectra show that the PL peak position is red-shifted with increasing anodization time. This behavior corresponds to the change of pore size which is consistent with the quantum confinement model. The FWHM(full width at half maximum) of PL peak is decreased from 97 to 51 nm and the PL peak position is blue-shifted with increasing current density up to 10 mA/$cm^2$. The PL peak intensity of the PS fabricated under 1 mA/$cm^2$ is the highest among samples.