• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.133-134
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• 2007

We have studied the structural and electrical, optical properties of Al doped ZnO(AW) thin films which were fabricated by If reactive magnetron sputtering method with various heat treatment conditions. The heat temperatures of specimen fabrication were comning 7059 glass is $200{\sim}500^{\circ}C$ and Polyimide films are $200{\sim}350^{\circ}C$ respectively. The variations of the electrical and optical properties with heat treatment temperature and ambient were studied.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.508-511
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• 2004

This study focused on the effect of autonomic microcapsules on the mechanical properties of structural material. Several types of microcapsules with healing agents were manufactured by varying agitation speed of high speed stirrer. The size distribution of microcapsules was measured by a particle size analzer. The epoxy specimens embedded with microcapsules were manufactured and the degree of cure of such epoxy specimen was measured by a differential scanning calorimetry. The tensile modulus and tensile strength in epoxy specimens embedded with microcapsules were evaluated in order to investigate the effects of microcapsules on mechanical properties of structural materials. The configuration of microcapsules and morphology of fracture surfaces for the epoxy specimen were examined by an optical microcope and a scanning electron microscope. According to the results, tensile strength of the epoxy specimen embedded with microcapsules was indicated a little reduction, but tensile modulus was not much affected on microcapsules.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.70-73
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• 2002

Thin films of vanadium oxide($VO_{x}$) have been deposited by r.f. magnetron sputtering from $V_{2}O_{5}$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure, chemical composition, molecular structure and optical properties of films sputter-deposited under different oxygen gas pressures and in-situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD. RBS, FTlR and optical absorption measurements. The films as-deposited are amorphous and those annealed for time longer than 4h are polycrystalline. $V_{2}O_{5}$ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric $V_{2}O_{5}$. When annealed at $400^{\circ}C$, the as-deposited films are reduced to a lower oxide. It is observed that the oxygen atoms located on the V-O plane of $V_{2}O_{5}$ layer participate more readily in the oxidation and reduction process. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly between 400 and 550nm.

• 한국재료학회지
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• 제16권3호
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• pp.183-187
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• 2006

We present the effects of rapid thermal annealing (RTA) temperature on the structural and optical properties of self-assembled InAs quantum dot (QD) structures grown on GaAs substrates by molecular beam epitaxy (MBE). The photoluminescence (PL) measurements are performed in a closed-cycle refrigerator as a function of temperature for the unannealed and annealed samples. RTA at higher temperature results in the increase in island size, the corresponding decrease in the density of islands, and the redshift in the PL emission from the islands. The temperature dependence of the PL peak energy for the InAs QDs is well expressed by the Varshni equation. The thermal quenching activation energies for the samples unannealed and annealed at $600^{\circ}C$ are found to be $25{\pm}5meV$ and $47{\pm}5$ meV, respectively.

• Macromolecular Research
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• 제12권3호
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• pp.251-257
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• 2004

The nature of the nematic liquid crystal (LC) alignment induced by the rubbed polyimide (PI) alignment layers (ALs) and the electro-optical (EO) properties of the LC cells are expected to depend on the chemical and physical features of the PI. By employing five pyromellitic dianhydride (PMDA)-type PIs having different functionalities, we have studied the effects of the PI's structure and chemistry on the alignment characteristics and the cell's EO properties. Increasing the flexibility of the PI increases the pretilt angle and tends to improve the alignment stability. On the other hand, the rigid, fluorinated PI displays poor stability for LCs and induces a less stable/uniform LC alignment and, subsequently, a small pre tilt angle. It also transpired that fluorination of the PI deteriorated the voltage-transmittance characteristics and the voltage holding ratio; increasing the flexibility of the PI structure improves these EO properties. The finding that the qualitative trends for the PI's functionalities are similar for both the alignment and EO properties suggests that the EO properties are closely related to the alignment characteristics, which are determined by short-range interactions between LC and PI molecules.

• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.321-324
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• 2013

In this study, The RF magnetron sputter and evaporator was on glass substrates 30 mm ${\times}$ 30 mm OMO multilayer thin film structure is applied to the low-e. Structural and optical properties, a thin film was produced, the variable was placed into a variable deposition time of the oxide layer. According to the XRD measurement results there is no peak that satisfies the Bragg's law ($2dsin{\theta}=n{\lambda}$) which confirmed that it is an amorphous structure. RMS value of the results of the AFM measurement, has a roughness of less than 2 nm. transmittance measurements results, visible light region an average 80%, IR region 40% showed.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.56.2-56.2
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• 2010

An improvement in the optical and structural properties of p-GaN was obtained by using antimony (Sb) as a surfactant during p-GaN growth. Two different growth temperatures of p-GaN such as $1030^{\circ}C$ and $900^{\circ}C$ were considered. Keeping the growth conditions for p-GaN constant, Sb was introduced during p-GaN growth while varying the [Sb]/([Ga]+[Mg]) flow ratio. [Sb]/([Ga]+[Mg]) flow ratio will be denoted as SGM ratio for convenience. SGM ratio of 0, 0.015 and 0.03% were considered for high temperature p-GaN growth. SGM ratio of 0, 0.005, 0.01 and 0.02% were considered for low temperature p-GaN growth. The analysis results suggest that using the optimum SGM ratio during p-GaN growth greatly improves the optical and structural properties of the p-GaN.

• 한국표면공학회지
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• 제29권5호
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• pp.556-562
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• 1996

Carbon nitride (CN) films were synthesized on silicon substrates by a combined ion-beam and laser-ablation method under various conditions; ion-beam energy and ion-beam current were varied. Raman spectroscopy and spectroscopic ellipsometry (SE) were employed to characterize respectively the structural and the optical properties of the CN films. Raman spectra show that all the CN films are amorphous independent of the ion-beam current and the ion-beam energy. Refractive indices, extinction coefficients and optical band gaps which were determined from the measured SE spectra exhibit a significant dependence on the synthesis conditions. Especially, the decrease of the refractive indices and the shrinkage of the optical band gap is noticeable as the ion-beam current and/or the ion-beam energy increase.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.27.1-27.1
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• 2009

In recent years, ZnO nanostructures have drawn considerable attentions for the development of futuristic electronic devices due to their superior structural and optical properties. As the growth of ZnO nanowires by MOCVD is a bottom-up technique, the nature of substrates has a vital role for the dimension and alignment of the nanowires. However, in the pursuit of next generation ZnO based nanodevices, it would be highly preferred if well-ordered ZnO nanowires could be obtained on various substrates like sapphire, silicon, glass etc. Vertically aligned nanowires were grown on A and C-plane sapphire substrates, where as nanopencils were obtained on R-plane sapphire substrates. In addition, C-axis oriented vertical nanowires were also found using an interfacial layer(aluminum nitride film) on silicon substrates. On the other hand, long nanowires were found on Ga-doped ZnO film on glass substrates. Structural and optical properties of the ZnO nanowires on various substrates were also investigated.

• 한국재료학회지
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• 제12권6호
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• pp.476-481
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• 2002

In this work, we report on the synthesis of the GaN powders from gallium oxide hydroxide (GaOOH) powders and on the structural and optical properties of them. Simple heat treatment of GaOOH in the flow of $NH_3$ gas leads to the formation of submicron hexagonal GaN powders even at the low reaction temperature of $800^{\circ}C$. XRD measurements show that the powders obtained are the single phase GaN. EDS, FTIR, and PL measurements indicate the oxygen-associated characteristics. It is shown from the low temperature PL measurement on GaN powders synthesized at $1000^{\circ}C$ that the shallow donor-acceptor recombination induced emission is more intense than the near band-edge excitonic emission.