• Progress in Superconductivity and Cryogenics
• /
• v.16 no.4
• /
• pp.21-25
• /
• 2014

In order to develop 2nd generation (2G) high-temperature superconducting (HTS) wires as commercial products, it is necessary to perform a high speed investigation of their superconducting performance. Room-temperature and non-contact optical scanning tools are necessary to verify the microstructure of the superconducting materials, the current flow below the critical temperature, and the critical current density. In this paper, we report our results of an inspection of the electrical transport properties of coated conductors. The samples that we used in our study were highly qualified rare-earth based coated conductors produced via co-evaporation, and $SmBa_2Cu_3O_{7-y}$ (SmBCO) was the superconducting materials used in our studies. A film grown on IBAD-MgO templates shows larger than 400 A/cm at 77 K and a self-field. The local transport properties of the films were investigated by room-temperature imaging by thermal heating. The room-temperature images show structural inhomogeneities on the surface of the films. Bolometric response imaging via low-temperature bolometric microscopy was used to construct the local current mapping at the surface. These results indicate that the non-uniform regions on the surface disturb the current flow, and laser scanning images at room-temperature and at a low-temperature suggest a correlation between the structural properties and transport properties. Thus this method can be effective to evaluate the quality of the coated conductors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.10
• /
• pp.901-906
• /
• 2006

The transparent conductive oxide(TCO) has been used in necessity as front electrode for increasing efficiency of LED. In our paper, aluminium-doped zinc oxide films(AZO), which has transparent conducting were prepared with RF magnetron sputtering system on glass substrate(corning 1737) and annealed at $400^{\circ}C$ for 2 hr in vacuum ambient and $600^{\circ}C$ for 2hr with $O_2$ ambient respectively. The smooth AZO films were etched in diluted HCL(0.5 %) to examine the surface properties, which in ambient post-annealing process. We confirmed that the electric, structural and optical properties of textured AZO thin films, which implemented using the methods of XRD, FWHM, AFM and Hall measurement. The properties of textured AZO thin films especially depended on the ambient post-annealing process. We presumed that the change of transmittances as R G B LED and the ambient post-annealing process will be increasing the efficiency of LED.

• Korean Journal of Materials Research
• /
• v.15 no.8
• /
• pp.514-517
• /
• 2005

Effects of nitrogen and oxygen annealing on the carrier concentration, carrier mobility, electrical resistivity and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD), Scanning electron microscope (SEM), photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. Annealing undoped ZnO films grown by ALD at a high temperature above $600^{\circ}C$ improves the crystallinity and enhances W emission but deteriorates the electrical conductivity of the flms. The resistivity of the ZnO film annealed particularly at $800^[\circ}C$ in a nitrogen atmosphere is much higher than that annealed at the same temperature in an oxygen atmosphere.

• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.2
• /
• pp.88-91
• /
• 2002

InGaN/GaN multiple quantum wells (MQWs) were grown by metalorganic chemical vapor deposition and their structural and optical properties were studied. When the average In content was increased by increasing TMIn flow rate, PL measurement showed little change in PL peak position and large increase in PL intensity instead. Large changes in PL peak position could be achieved by changing growth temperature. We propose the formation of fixed In content, highly In-rich quantum dot-like phases in InGaN MQWs driven by spinodal decomposition.

• Korean Journal of Materials Research
• /
• v.27 no.8
• /
• pp.403-408
• /
• 2017

We investigated the effect of ZnO buffer layer on the formation of ZnO thin film by ultrasonic assisted spray pyrolysis deposition. ZnO buffer layer was formed by wet solution method, which was repeated several times. Structural and optical properties of the ZnO thin films deposited on the ZnO buffer layers with various cycles and at various temperatures were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. The structural investigations showed that three-dimensional island shaped ZnO was formed on the bare Si substrate without buffer layers, while two-dimensional ZnO thin film was deposited on the ZnO buffer layers. In addition, structural and optical investigations showed that the crystalline quality of ZnO thin film was improved by introducing the buffer layers. This improvement was attributed to the modulation of the surface energy of the Si surface by the ZnO buffer layer, which finally resulted in a modification of the growth mode from three to two-dimensional.

• Proceedings of the Korean Society of Dyers and Finishers Conference
• /
• 2012.03a
• /
• pp.71-71
• /
• 2012

To control luminescence emission property, a novel series of strong fluorescent fluorin-boron complexes were synthesized in higher yield. The resulting structural analysis was completed. Small molecules with a built-in fluorine-boron core structural architecture has been attracted considered attention as the key emissive elements due to the their good properties such as bipolar charge transport and high photo efficiency. Thus, new type of fluorine-boron(F-B) complexes are designed and prepared. Changing the substituent position on fluorophore ring provided a deep understanding on the relationship between structure and optical properties.

• Proceedings of the Computational Structural Engineering Institute Conference
• /
• 2004.10a
• /
• pp.527-533
• /
• 2004

Utilization of new lighter materials, more tough and durable than existing materials, is getting larger in recent constructions. FRP, stronger and lighter than present materials, can be formed in various shapes and has high durability, which makes it more profitable as a new material in construction fields. However, effort to use FRP in real construction is toddling and FRP is used primarily as reinforcing material in connote structure. We are about to develop Hybrid FRP Rod for the development of advanced construction material which is based on IT, by Hybridization of HIP, spotlighted as new construction material, and optical sensor in smart measurement. Beforehand, it is required to fully understand the properties of tension test operated in Hybrid FRP Rod. For this, a specimen was made by hybridization of FRP Rod and FBG sensor. Strain of Hybrid FRP Rod was measured comparing electric sensor and FBG sensor.

• Electrical & Electronic Materials
• /
• v.8 no.4
• /
• pp.458-463
• /
• 1995

The optical and electrical properties of $C_{22}$-Quinolinium(TCNQ) Langmuir-Blodgett films have been studied depending on the annealing temperatures. The optimal properties were investigated using UV/visible(300-800[nm]) absorption spectra and FTIR(Fourier-transformed- infrared) absorption measurements. The electrical properties were investigated in a frequency range of 10[Hz]-13[MHz]. The UV/visible absorption spectra at room temperature show that there are four characteristic peaks at 320, 380, 494 and 678[nm]. These absorption peaks decrease very rapidly above the annealing temperature of 180[.deg. C], which is due to a structural change of TCNQ. The FTIR absorption measurements strongly support the result of the UV/visible absorption spectra, because the absorption peak of TCNQ- at 2181[$cm^{-1}$ /] also decreases above 140[.deg. C]. The frequency-dependent dielectric constant shows that there is a dielectric dispersion near 1[MHz] which is due to an orientational polarization of the molecules inside the film. The overall frequency-dependent dielectric constant is higher near 80[.deg. C]. It may be due to a softness of the alkyl chains.s.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.329.1-329.1
• /
• 2014

In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.4
• /
• pp.203-208
• /
• 2014

In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.