• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.357-360
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• 2011

N-doped ZnO nanofilms were prepared by plasma enhanced atomic layer deposition method. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ and $N_{2}$ were used as Zn, O and N sources, respectively, for N-doped ZnO films under variation of radio frequency (rf) power from 50-300W. Structural, optical and electrical properties of as-grown ZnO films were investigated with Xray diffraction(XRD), photoluminescence(PL) and Hall-effect measurements, respectively. Nitrogen content and p-type conductivity in ZnO nanofilms increased with the rf power.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.2
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• pp.89-93
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• 2002

PbO contained multicomponent glass and fibers have been obtained by melting process and double crucible method. PbO containing glass is most promising for fabrication of high-numerical aperture optical fiber. In this study, main composition is $SiO_2$, PbO and glass composition mix component oxide such as $K_2O$, $Na_2O$, $B_2O_3$, $A1_2O_3$. Also, the optical, mechanical and structural properties of manufactured fibers by double crucible method are investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.188-188
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.192-192
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• 2003

• Proceedings of the Optical Society of Korea Conference
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• 2006.02a
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• pp.247-248
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• 2006

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.173-174
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• 2006

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.214-217
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• 2017

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. We report the effect of growth temperature on structural properties of AlSb grown on GaAs substrate. In particular we studied the surface of AlSb with the growth temperature by atomic force microscopy, and concluded that optimized growth temperature of AlSb is $530^{\circ}C$. We also show the result of real-time monitoring of AlSb growth by in situ ellipsometry. The results of the structural study are good agreement with the previous reported ellipsometric data.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.350.2-350.2
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• 2014

We investigated the structural and optical evolution of Ga2O3 thin films on glass substrates deposited using radio frequency magnetron sputtering. Initially, amorphous Ga2O3 thin film is grown, and then, surface humps and nanowire (NW) bundles are gradually formed as the film thickness increases. The surface humps are Ga-rich and provide nucleation sites for NWs through a self-catalytic vapor-liquid-solid mechanism with self-assembled Ga droplets. Both the surface humps and the NWs induce variation of the optical properties such as the optical bandgap and refractive index by absorbing light in the ultraviolet region.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.395-397
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• 1998

NH$_{3}$ gas sensitive ZnO:Al, In thin films were prepared by the heat treatment following continuous deposition of very thin In layer and ZnO:Al layer to obtain the modified surface morphology for good sensitivity. Dependence of the structural electrical and optical properties of them on heat treatment temperature was investigated by x-ray diffraction, SEM, 4-point probe method and spectrophotometer.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.76-78
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• 2002

We have carried out the first-principle electronic structure calculations to investigate the spacer layer formation of Fe/Si multilayered films (MLF) and compared with the results obtained by optical spectroscopy. The computer-simulated spectra based on various structural models of MLF showed that neither FeSi$_2$ nor B2O-phase FeSi, which are semiconducting, could be considered as the spacer layers in the Fe/Si MLF for the strong antiferromagnetic coupling. The optical properties of the spacer extracted from the effective optical response of the MLF strongly support its metallic nature. The optical conductivity spectra of various phases of Fe-Si compounds were calculated and compared with the extracted optical properties of the spacer. From the above theoretical investigations it is concluded that a E2-phase metallic FeSi compound is spontaneously formed at the interfaces during deposition.