• Title/Summary/Keyword: Optical Probe

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Warp Characteristics of Spiral Galaxies in the Virgo Cluster

  • Bae, Hyun-Jin;Chung, Ae-Ree;Jozsa, GyulaI. G.;Kim, Sung-Soo;Yoon, Suk-Jin
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.1
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    • pp.62.1-62.1
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    • 2011
  • Warp phenomenon seems to be ubiquitous among spiral galaxies, and a a number of mechanisms have been suggested as the origin including cosmic infall and tidal interactions. In this work, we compare warp characteristics of cluster spirals and the ones in the field in order to investigate the influence of environment on warping, in particular of gas disks. We make use of a tilted-ring modeling (TRM) method to VLA HI (21cm) data cubes of carefully selected 20 spiral galaxies in the Virgo cluster. The TRM allows us to probe kinematics, e.g., inclination, position angle, and velocity dispersion of HI disks. We compare the properties of each tilted-ring component to mean properties based on optical images. In this contribution, we present preliminary yet important findings on the warp characteristics of spiral galaxies in dense environment, and discuss possible origins of those kinematical structures.

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A study on the Electrical Characteristics of $\alpha$-Sexithiophene Thin Film ($\alpha$-Sexithienyl 박막의 전기적 특성에 관한 연구)

  • 오세운;권오관;최종선;김영관;신동명
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.518-520
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    • 1997
  • Recently, thiophene oligomer with short chain lengths has received much attention as model compounds for facilitating better understanding of electronic and optical properties of polymers, because oligomer is well-defined chemical systems and its conjugation chain length can be exactly controlled. Moreover, organic this films based on conjugated thiophene oligomer have potential for application to electronic and optoelectronic devices such as MISFETs(metal-insulator-semiconductor field-effect transistors) and LEDs(light-emitting diodes). However, there is little knowledge on electronic and structural properties of linear-conjugated oligothiophenes in solid states, compared with those in solutions. $\alpha$-sexithienyl($\alpha$-6T) thin-films were deposited by OMBD(Organic Molecular Beam Deposition) technique, where the $\alpha$-6T was synthesized and purified by the sublimation method. The $\alpha$-6T films were deposited under various conditions. The effects of deposition rate, substrate temperature, and vacuum pressure on the formation of these films have been studied. The molecules in the $\alpha$-6T film deposited at a low deposition rate under a high vacuum were aligned almost perpendicular to the substrate. The $\alpha$-6T films deposited at an elevated substrate temperature showed higher conductivity than the film deposited at room temperature. Electrical characterization of these films will be also executed by using four-point probe measurement technique.

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Ar Addition Effects in $Cl_2$ Plasma on Etching Properties for BLT Thin Film ($Cl_2$ 플라즈마를 이용한 BLT 박막 식각 특성에 대한 Ar 첨가효과)

  • Kim, Dong-Pyo;Kim, Kyoung-Tae;Kim, Chang-Il;Lee, Cheol-In
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.174-177
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    • 2003
  • $Cl_2$ 플라즈마를 이용한 BLT 박막의 식각에서 Ar 가스의 첨가에 따른 식각 속도, 선택비 및 식각 형상의 변화에 대하여 관찰하였다. BLT 박막의 식각 속도는 100% Ar 플라즈마에서 100 % $Cl_2$ 플라즈마에서의 식각 속도보다 약 1.5배정도 빨랐으며, 80% Ar/20% $Cl_2$ 조건에서 $503{\AA}/min$ 최대 식각의 최대 시각 속도를 얻었다. RF 전력과 직류 바이어스 전압을 증가함에 따라 식각 속도는 증가하였으며, $Ar/Cl_2$ 플라즈마의 식각 속도가 $Cl_2$ 플라즈마의 식각 속도 보다 높았다. 식각 공정 변수의 변화에 의한 플라즈마 변수가 BLT 식각 속도에 미치는 영향을 관찰하기 위하여 LP(Lanmuir porbe)와 OES(optical emission spectroscopy)분석을 수행하였다. Ar 첨가량이 증감함에 따라 LP 분석에서 전자의 온도는 증가하였으나 전자밀도는 감소하였다. 이는 Ar의 이온화 준위가 Cl 보다 높기 때문에 이온화 윷이 낮아지기 때문으로 판단된다, 또한, OES 분석에서 Ar 첨가량이 증가함에 따라 Cl 원자의 부피 밀도는 감소하였다. Ar 첨가에 의한 BLT 박막의 식각 속도의 변화와 LP 및 OES 분석을 고려하면, BLT 박막은 화학적 식각의 도움을 받는 무리적 식각에 의하여 식각됨을 확인하였다,

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Enhancement of Hardness and Moderation of Surface Defects of 14K, 18K Yellow Gold Alloy by Heat Treatment (열처리에 의한 14K, 18K yellow gold alloy의 경도 향상 및 표면 결함 완화)

  • Ahn, Ji-Hyun;Seo, Jin-Kyo;Ahn, Yoeng-Gil;Park, Jong-Wang
    • Journal of the Korean institute of surface engineering
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    • v.43 no.2
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    • pp.86-90
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    • 2010
  • In this study, we conducted heat treatment on 14K, 18K yellow gold alloy at various temperature conditions for improving their hardness and moderating their surface defects. Also after the heat treatment we used EPMA (Electron Probe Micro Analyzer), XRF (x-ray Fluorescence spectroscopy) for qualitative analysis and OM (optical microscope), SEM (scanning electron microscope) to investigate the changes of surface grain boundary. We used Vickers hardness tester to verify the changes of hardness. After the heat treatment, 14K, 18K gold alloys showed improved hardness and moderated surface defects at specific temperatures and duration.

Investigation of IZO/Al multilayer anode grown on PEN substrate by a twin target sputtering system for flexible top emitting organic light emitting diodes (TTS를 이용하여 PEN 기판 상에 성막한 플렉시블 전면 발광 OLED용 IZO/Al multilayer 애노드의 특성)

  • Oh, Jin-Young;Moon, Jong-Min;Jeong, Jin-A;Kim, Han-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.444-445
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    • 2007
  • IZO/Al multilayer anode films for flexible top emitting organic light emitting diodes (TOLEDs) were grown on PEN (polyethylen-enaphthelate) substrate using twin target sputter (TTS) system. To investigate electrical and optical properties of IZO/Al multilayer films, 4-point probe method and UV/Vis spectrometer were used, respectively. From a IZO/Al multilayer films with 100nm-thick Al, sheet resistance of $1.4{\Omega}/{\square}$ and reflectance of above 62% at a range of 500~550nm wavelength could be obtained, In addition, structural and surface properties of IZO/Al multilayer films were analyzed by XRD (X-ray diffraction) and FESEM (field emission scanning electron microscopy) and AES (auger electron spectroscope), respectively. Moreover, flexibility of IZO/Al multilayer anode films were examined by bending test method.

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A Study of Al2O3 Thin Films Etching Characteristics Using Inductively Coupled BCl3/Ar Plasma (유도결합형 BCl3/Ar 플라즈마를 이용한 Al2O3 박막의 식각 특성)

  • Kim, Young-Keun;Kwon, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.6
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    • pp.445-448
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    • 2011
  • In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.

Measurement of Normal Spring Constant of Colloidal Probes for Atomic Force Microscope (원자 현미경용 콜로이드 탐침 수직 스프링 상수 측정)

  • Kim, Dae-Hyun;Kim, Min-Seok;Hahn, Junhee;Ahn, Hyo-Sok
    • Tribology and Lubricants
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    • v.28 no.5
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    • pp.212-217
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    • 2012
  • A modified thermal noise method was proposed to measure the normal spring constants of the colloidal probes for an atomic force microscope. We used commercial tipless cantilevers (length 150, width 30, nominal k 7.4 N/m) and borosilicate spheres with a diameter of 20 to fabricate colloidal probes. The inverse optical lever sensitivity of both the tipless cantilever and colloidal probes were used to measure the normal spring constant of the colloidal probes. We confirmed the accuracy and usefulness of our method by comparing the measurement results with those obtained using the nanoforce calibrator (NFC), which reportedly has an uncertainty of 1.00%. The modified thermal method showed a good agreement (~10% difference) with the NFC, allowing us to conclude that the modified thermal method could be employed for the effective measurement of the normal spring constants of colloidal probes.

Effects of cooling rate on Microstructure and Bond Strength in WC-Co/Cu/SM45C steel joint (WC-Co/Cu/SM45C강접합에 미세조직 및 접합강도에 미치는 냉각속도의 영향)

  • 정승부;양훈모
    • Journal of Welding and Joining
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    • v.17 no.2
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    • pp.104-111
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    • 1999
  • The interfacial microstructure and bond strength were examined for WC-Co/Cu/SM45C steel join using a nickel-plated copper in vacuum at 1323K for 0.6ks∼3.6ks. After bonding, microstructure in bonding interface was observed by OM(Optical Microscopy), SEM(Scanning Electron Microscopy) and EPMA(Eelectron Probe Micro Analyzer). The oil cooling was carried out at 353K, the cooling rate in air and furnace was 22K/s and 4.4K/s. respectively. It was found that dendritic widths increased with the content of cobalt and bonding times at 1323K. As a whole, bond strength values at the same bonding condition decreased in this order: WC-13wt.%Co/SM45Csteel. WC-8wt.%Co/SM45Csteel and WC-4wt.%Co/SM45Csteel. The bond strength of WC-13wt.%Co/S45C steel joint in oil cooling was 273MPa. This value was greatly higher than those of 125MPa in furnace cooling and 93MPa in air cooling at 1323K for 0.6ks. The bond strength values were found to be closely associated with the content of cobalt in WC-Co and cooling rate.

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Phase Change Characteristics of Sb-Based Phase Change Materials

  • Park, Sung-Jin;Kim, In-Soo;Kim, Sang-Kyun;Choi, Se-Young
    • Korean Journal of Materials Research
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    • v.18 no.2
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    • pp.61-64
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    • 2008
  • Electrical optical switching and structural transformation of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ for crystallization was 120, 50 and 90 ns at 12 mW, respectively. $Sb_{65}Se_{35}$ was crystallized at $170^{\circ}C$. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than $10^4{\Omega}/{\gamma}$.

A Measurement Method of Internal Defects of Pressure Vessles by Using Real-Time Holographic Interferometry (실시간 홀로그래픽 간섭법을 이용한 압력용기의 내부결함 측정법)

  • Moon, Sang-Joon;Kang, Young-June;Baik, Sung-Hoon;Kim, Cheol-Jung
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.20 no.4
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    • pp.1233-1240
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    • 1996
  • Conventional measurement methods using ultrasonic wave or x-ray, eddy current for non-destructive testing(NDT) in nuclear power plants and other industrial plants have been utilized as the method of contact with objects to be inspected. For this reason these methods require relatively much time and inspection area is limited by the location of probe or film. But holograpic interferometry which is a non-contact optical measurement method using a coherent light source has an advantage that quantative measurement can be performed at a time. In this paper a new method using realtime holographic interfreometry and image processing for detecting internal flaws of pressure vessels is presented.