• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.166-176
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• 1996

The fundamental conditions for growing $CsLiB_{6}O_{10}$ crystal, new nonlinear optical material, were investigated. Stoichiometirc mixture of $CsLiB_{6}O_{10}$ composition resulted in the crystal of the same composition in the process of heating at the temperature above $600^{\circ}C$. No phase transition was observed in the $CsLiB_{6}O_{10}$ crystal in the temperature range of $600^{\circ}C~800^{\circ}C$, and $CsLiB_{6}O_{10}$ crystal melted congruently at $850^{\circ}C$. When the melt of this composition was cooled at rates of $1~150^{\circ}C/hr$, glass state ingot was formed regardless of cooling rates. However, $CsLiB_{6}O_{10}$ crystals were formed directly from the melt at any cooling rate in the presence of $CsLiB_{6}O_{10}$ seed crystal in the melt. Transparent $CsLiB_{6}O_{10}$ single crystal was grown from the melt using the seed crystal at the growing rate of 0.06 mm/hr in the furnace having the temperature gradient of $100^{\circ}C/cm$. Analysis of the single crystal showed that the crystal belonged to the noncentrosymmetric tetragonal space group 142d and unit cell dimensions were $a=10.467(1)\;{\AA},\;c=8.972(1)\;{\AA}\;and\;V=983.0(2)\;{\AA}^3$. Optical absorption edge of the crystal was observed at 180mm and the crystal showed a good optical transparency (70% transmittance, sample thickness 0.5 mm) in the wide wavelength range above 300 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.964-967
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• 2009

A new hybrid-type touch screen panel (TSP) has been developed based on a-Si:H TFT which can detect the change of both $C_{LC}$ and photo-current. This TSP can detect the difference of $C_{LC}$ between touch and no-touch states in unfavorable conditions such as dark ambient light and shadows. The hybrid TSP sensor consists of a detection area which includes one TFT for photo sensing and two TFTs for amplification. Compared to a single internal capacitive TSP or an optical sensing TSP, this new proposed hybrid-type TSP enables larger sensing margin due to embedding of both optical and capacitive sensors.

• Korean Journal of Veterinary Service
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• v.15 no.1
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• pp.32-45
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• 1992

In order to establish and enzyme-linked immunosorbent assay to ILTV, field virus strain of ILTV was propagated in chorioallantoic membrane of the embryonated eggs. purified and used as antigen. The antisera selected from the field samples and immunized chickens based on serum neutralization test were used as the standard positive and negative sera in all tests. It was found that optimal antigen concentration was $2{\mu}g$ of protein per well and a 1 : 100 dilution of standard serum showed low background optical density with negative serum and high P/N values of positive sera. A 1 : 500 dilution of the rabbit anti-chicken IgG peroxidase conjugate produced a high P/N values and thirty minutes was chosen as suitable time to read the optical density of the enzyme substrate reaction and optical density was consistent during the 16 hours after stopper was treated. When coated antigen was kept on microplate for varying time up to 16 hours at $4^{\circ}C$ or $37^{\circ}C,$ no significant difference was observed between the treatment. The coated antigen could be kept without change of antigenicity for at least one month at $-70^{\circ}C,\; -20^{\circ}C,\; 4^{\circ}C$ and room temperature. When blocking buffer contanining bovine serum albumin was mixed directly with conjugate and serum at 10% level induced higher P/N values compared to blocking antigen coated microplate with the same blocking buffer. The coefficience of correlation between ELISA and SN test was 0.577. When antibody response of chickens, vaccinated with ILTV, was examined by ELISA and SN test, antibody rising and decay pattern between the two test was similar until 11 weeks of age. However 12 weeks onward antibody titer checked on by SN test was slightly lower than that tested by ELISA.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.137-137
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• 2003

Optical amplificator have been used to compensate the losses in the optical signal transmission and processing. Today, there has been increasing demand for the very low cost optical amplifier. Sol-gel offers considerable potential both low cost manufacture, and for great flexibility in materials composition and structure. In addition, the sol-gel process is a very attractive method for producing porous materials with controlled structure. In this work, we present the potoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films. Erbium doped alumina nano sol was prepared by Al(NO$_3$)$_3$.9$H_2O$ and Er(NO$_3$)$_3$.5$H_2O$ through hydrolysis and peptization, and then GPS (3-Glycidoxypropyltrimethoxysilane) was added into Er doped alumina nano sol for organic- inorganic hybridization. Er doped A1$_2$O$_3$/SiO$_2$ film was obtained by spin coating, dip coating and thermal treatment from 30$0^{\circ}C$~120$0^{\circ}C$, and there were crack-free after thermal treatment. The thickness of film was measured SEM, and the porosity of film was characterized by BET and TGA. The crystal phase of Er doped A1$_2$O$_3$/SiO$_2$ were determined by XRD. Finally, the photoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films will be discuss with the consideration of porosity and crystallity.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.2
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• pp.74-78
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• 2019

$Zn_2SnO_4$ thin films were deposited on quartzs substrates by using radio-frequency magnetron sputtering system. Thermal treatments at various temperatures were performed to evaluate the effect of annealing temperatures on the properties of $Zn_2SnO_4$ thin films. Surface morphologies were examined by using field emission-scanning electron microscopy and showed that sizes of grains were slightly increased and grain boundaries were clear with increasing annealing temperatures. The deposited $Zn_2SnO_4$ thin films on quartzs substrates were amorphous structures and no distinguishable crystallographic changes were observed with variations of annealing temperatures. The optical transmittance was improved with increasing annealing temperatures and was over 90% in the wavelength region between 350 and 1100 nm at the annealing temperature of $600^{\circ}C$. The optical energy bandgaps, which derived from the absorbance of $Zn_2SnO_4$ thin films, were increased from 3.34 eV to 3.43 eV at the annealing temperatures of $450^{\circ}C$ and $600^{\circ}C$, respectively. As the annealing temperature was increased, the electron concentrations were decreased. The electron mobility was decreased and resistivity was increased with increasing annealing temperatures with exception of $450^{\circ}C$. These results indicate that heat treatments at higher annealing temperatures improve the optical and electrical properties of rf-sputtered $Zn_2SnO_4$ thin films.

• Journal of Sensor Science and Technology
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• v.9 no.6
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• pp.455-460
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• 2000

Zinc oxide(ZnO) thin films were cathodically deposited on ITO glass from an aqueous zinc nitrate electrolyte. Three main fabrication parameters were taken into account : deposition potential, solution concentration and growth temperature. Different layers of ZnO thin films grown by varying the three parameters were studied by X-ray diffraction, scanning electron microscope and optical absorption spectroscopy. The prepared ZnO thin films were shown as a hexagonal wurtzite structure on the X-ray diffraction patterns and the good quality of ZnO thin films were obtained by potentiostatic cathodic deposition at -0.7V vs. Ag/AgCl reference electrode onto ITO glass from aqueous 0.1 mol/liter zinc nitrate electrolyte at $60^{\circ}C$.

• Progress in Superconductivity
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• v.3 no.1
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• pp.95-98
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• 2001

Recently, NiO films have been studied as a buffer layer to fabricate the superconductor with preferred orientation and as a diffusion barrier to prevent the reaction between superconductor and textured nickel substrate . We fabricated NiO films on textured Ni substrate by thermal oxidation with various variables of temperature, oxidation time, atmosphere, and cooling rate. We investigated the alignment of NiO films by XRD and pole figure and the microstructures by SEM. (200) <001> alignment of NiO film was observed at the oxidation condition of $1200^{\circ}C$ far 10min and slow cooling in O2 atmosphere. During the process in Ar atmosphere, we could also observe the thermal faceting which affects the alignment of NiO alms on Ni substrate.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.88-97
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• 1994

We describe the design, fabrication, and performance of the optical fiber-photodiode 1$\times$12 arry module using mesa-type InS10.53T GaS10.47TAS/INP 1$\times$12 PIN photodiode array. We fabricated the PIN PD array for high-speed optical fiber parallel data link optimizing quantum efficiency, operating speed sensitivity from the PIN-FET structure, and electrical AC crosstalk. For each element of the array, the diameter of the photodetective area is 80 $\mu$m, the diameter of the p-metal pad is 90 $\mu$m, and the photodiode seperation is 250 $\mu$m to use Si v-groove. Ground conductor line is placed around diodes and p-metal pads are formed in zigzag to reduce Ac capacitance coupling between array elements. The dark current (IS1dT) is I nA and the capacitance(CS1pDT) is 0.9 pF at -5 V. No signifcant variations of IS1dT and CPD from element to element in the array were observed. We calulated the coupling efficiency for 10/125 SMF and 50/125 GI MMF, and measured the responsivity of the PD array at the wavelength is 1.55 $\mu$ m. Responsivities are 0.93 A/W for SMF and 0.96 A/W for MMF. The optical fiber-PD array module is useful in numerous high speed digital and analog photonic system applications.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2003.05a
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• pp.15-18
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• 2003

The present study addresses an experimental investigations of the near field flow structures of supersonic, dual, coaxial, swirl jet. The swirl stream is discharged from the secondary annular nozzle and the primary inner nozzle provides the sonic and supersonic free jets. The interactions between the secondary swirl and inner soni $c^ersonic jets are quantified by a fine pilot impact and static pressure measurements and are visualized by using a shadowgraph optical method. The pressure ratios of the secondary swirl and primary soni $c^ersonic jets are varied below 7.0. Experiments are conducted to investigate the effects of the secondary swirl stream on the primary sonic and supersonic jets, compared with the secondary stream of no swirl. The results show that the presence of annular swirl stream causes the Mach disk to move more downstream, with the increased diameter, and remarkably reduces the fluctuations of the impact pressures in the supersonic dual coaxial jet, compared with the case of the secondary annular stream of no swirl.swirl.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.237-239
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• 1994

The $NO_2$ gas-detection characteristics were investigated using the functional organic Langmuir-Blodgett(LB) film of Tetra-3-hexadecyl-sulphamoylcopperphthalocyanine(HDSM-CuPc). A surface pressure of 30mN/m was obtained as a proper one for a film deposition. A deposited film status was confirmed by electrical and optical methods such as UV/visible absorption spectra and current-voltage(I-V) characteristics. The $NO_2$ gas response experiments under 200ppm concentration show that there is not increment of electrical conductivity in room temperature and is identified by UV/visible absorption spectra. But There are some increments of electrical conductivity in $160^{\circ}C$.