• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.27-28
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.267-268
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• 2008

• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.271-272
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• 2008

• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.165-166
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• 2008

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.390-395
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• 2007

We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.

• 한국전자현미경학회:학술대회논문집
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• 2007.05a
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• pp.15-17
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.27-27
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• 2016

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.32 no.2
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• pp.35-39
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• 2000

Refining is very important process of fibers treatment for proper paper properties. An extent of refining is usually measured by freeness, although freeness gives complicated meanings. One of a direct way of studying the refining effects on pulp fibers is making photomicrographs of beaten fibers. The conventional microscopy like light microscopy(LM) and scanning electron microscopy(SEM) require to preserve the wet structure of pulp fibers morphologically since most of papermaking process is carried out almost entirely in water. Recently developed microscopy, especially confocal laser scanning microscopy(CLSM), offers the possibility of examining fully hydrated pulp fibers. Cross-sectional images of wet pulp fibers are also generated using optical sectioning by CLSM and image analysis in order to verify and quantify the extent of fiber wall swelling indicating the internal fibrillation. At low beating load such as 2.5 kgf, in the same freeness, breaking length is higher than that of high beating load such as 5.6 kgf. fiber wall thickness at low beating load is greater than that at high beating load. This result is accounted for the fact that internal fibrillation in the low beating load was high.

• Applied Microscopy
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• v.51
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• pp.8.1-8.7
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• 2021

Growing demands for comprehending complicated nano-scale phenomena in atomic resolution has attracted in-situ transmission electron microscopy (TEM) techniques for understanding their dynamics. However, simple to safe TEM sample preparation for in-situ observation has been limited. Here, we suggested the optical microscopy based micro-manipulating system for transferring TEM samples. By adopting our manipulator system, several types of samples from nano-wires to plate-like thin samples were transferred on micro-electro mechanical systems (MEMS) chip in a single step. Furthermore, the control of electrostatic force between the sample and the probe tip is found to be a key role in transferring process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.280-286
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• 2010

We have investigated the influence of rapid thermal annealing (RTA) temperature on properties of Al-doped zinc oxide (AZO) thin films deposited on glass substrate by using radio-frequency magnetron sputtering. The RTA is performed in a nitrogen ambient in the temperature range from 300 to $600^{\circ}C$ for 1 minute in a rapid thermal annealer after growing the AZO thin films. The crystallographic structure and the surface morphology of AZO thin film are measured by using X-ray diffraction, and atomic force microscopy and scanning electron microscopy, respectively. The optical transmittance of the deposited thin films is examined in the wavelength range of 300-1100 nm, where the average transmittance is above the 90% in the visible and near-infrared regions. The optical bandgap is calculated from the Tauc's model, and it shows a significant dependence on the RTA temperature. As for the electrical properties of the thin films, the AZO thin film annealed at $400^{\circ}C$ shows the lowest electrical resistivity of $8.6{\times}10^{-3}{\Omega}cm$ and the Hall mobility of $11.3cm^2$/V-sec. These results suggest that the RTA temperature is an important parameter to influence on the structural, electrical, and optical properties of AZO thin films.