• Korean Journal of Optics and Photonics
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• v.28 no.3
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• pp.108-115
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• 2017

We report the assembly procedure and performance evaluation of a visible and near-infrared spectrometer in the wavelength region of 400-900 nm, which is later to be combined with fore-optics (a telescope) to form a f/2.5 imaging spectrometer with a field of view of ${\pm}7.68^{\circ}$. The detector at the final image plane is a $640{\times}480$ charge-coupled device with a $24{\mu}m$ pixel size. The spectrometer is in an Offner relay configuration consisting of two concentric, spherical mirrors, the secondary of which is replaced by a convex grating mirror. A double-pass test method with an interferometer is often applied in the assembly process of precision optics, but was excluded from our study due to a large residual wavefront error (WFE) in optical design of 210 nm ($0.35{\lambda}$ at 600 nm) root-mean-square (RMS). This results in a single-path test method with a Shack-Hartmann sensor. The final assembly was tested to have a RMS WFE increase of less than 90 nm over the entire field of view, a keystone of 0.08 pixels, a smile of 1.13 pixels and a spectral resolution of 4.32 nm. During the procedure, we confirmed the validity of using a Shack-Hartmann wavefront sensor to monitor alignment in the assembly of an Offner-like spectrometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.147-153
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• 1998

The strain characteristics of a fiber optic Fabry-Perot pressure sensor with high sensitivity using a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ (N/O/N) diaphragm is experimentally investigated. A 600 nm thick N/O/N diaphragm was fabricated by silicon anisotropic etching technology in 44 wt% KOH solution. An interferometric fiber optic pressure sensor has been manufactured by using a fiber optic Fabry-Perot intereferometer and a N/O/N diaphragm. The 2 cm length fiber optic Fabry-Perot interferometers in the continuous length of single mode fiber were produced with two pieces of single mode fiber coated with $TiO_{2}$ dielectric film utilizing the fusion splicing technique. The one end of the fiber optic Fabry-Perot interferometer was bonded to a N/O/N diaphragm. and the other end was connected to an optical setup through a 3 dB coupler. For the N/O/N diaphragm sized $2{\times}2\;mm^{2}$ and $8{\times}8\;mm^{2}$, the pressure sensitivity was measured 0.11 rad/kPa and 1.57 rad/kPa, respectively, and both of the nonlinearities were less than 0.2% FS.

• The Journal of Korean Academy of Prosthodontics
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• v.41 no.6
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• pp.699-713
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• 2003

Statement of problem. Titanium is the most important material for biomedical and dental implants because of their high corrosion resistance and good biocompatibility. These beneficial properties are due to a protective passive oxide film that spontaneously forms on the surface. Purpose. The purpose of this study was to evaluate the responses of osteoblast-like cells on different surface treatments on Ti discs. Material and Methods. Group 1 represented the machined surface with no treatment. Group 2 surfaces were sandblasted with $50{\mu}m\;Al_2O_3$ under $5kgf/cm^2$ of pressure. Groups 3 and 4 were sandblasted under the same conditions. The samples were treated on a titanium oxide surface with reactive sputter depositioning and thermal oxidation at $600^{\circ}C$ (Group 3) and $800^{\circ}C$ (Group 4) for one hour in an oxygen environment. The chemical composition and microtopography were analyzed by XRD, XPS, SEM and optical interferometer. The stability of $TiO_2$ layer was studied by petentiodynamic curve. To evaluate cell response, osteoblast extracted from femoral bone marrow of young adult rat were cultured for cell attachment, proliferation and morphology on each titanium discs. Results and Conclusion. The results were as follows : 1. Surface roughness values were, from the lowest to the highest, machined group, $800^{\circ}C$ thermal oxidation group, $600^{\circ}C$ thermal oxidation group and blasted group. The Ra value of blasted group was significantly higher than that of $800^{\circ}C$ thermal oxidation group (P=0.003), which was not different from that of $600^{\circ}C$ thermal oxidation group (P<0.05). 2. The degree of cell attachment was highest in the $600^{\circ}C$ thermal oxidation group after four and eight hours (P<0.05), but after 24 hours, there was no difference among the groups (P>0.05). 3. The level of cell proliferation showed no difference among the groups after one day, three days, and seven days (P>0.05). 4. The morphology and arrangement of the cells varied with surface roughness of the discs.

• Korean Journal of Optics and Photonics
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• v.20 no.5
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• pp.272-275
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• 2009

In order to enhance the background noise filtering performance of the white light interferometry(WLI), we demonstrate the noise filtering performance of preprocessing of the measured fringe signals. The WLI was realized through a mirau interferometer which was equipped with a green LED. When measuring large-height and rough surface objects, the illumination optics are considered the numerical aperture(NA) and the depth of focus(DOF). In this case, the limited NA of the illumination optics has a considerable impact on the interference fringe. Therefore, we propose a preprocessing method that uses the intensity difference between the measured intensity and the moving average intensity. The performance is demonstrated by measuring an array of metal solder balls fabricated on printed circuit board(PCB). The proposed method reduces the noise pixels by 15 percent.

• The Journal of Korean Academy of Prosthodontics
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• v.47 no.4
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• pp.376-384
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• 2009

Purpose: The purpose of this study was to evaluate the response of osteoblast-like cells to Ca-P coated surface obtained via Ion beam-assisted deposition (IBAD) method and Sol-Gel process on anodized surface by cellular proliferation and differentiation. Material and methods: The surface of a commercially pure titanium (Grade IV) discs with dimension of 10mm diameter and 2 mm thickness was modified by anodic oxidation under a constant voltage of 300 V. The experimental groups were coated with Ca-P by the IBAD method and Sol-Gel process on anodized surface. The surface roughness (Ra) of specimens was measured by optical interferometer and each surface was examined by SEM. To evaluate cell response, MG63 cells were cultured and cell proliferation, ALP activity and the ability of cell differentiation were examined. Also, cell morphology was examined by SEM. The significant of each group was verified by Kruskal-Wallis Test ($\alpha$=.05). Results: The Ra value of Ca-P coated surface by IBAD method was significantly higher than Ca-P coated surface by Sol-gel process (P < .05). The level of cell proliferation and ALP activity was higher in Ca-P coated surface by IBAD method (P<.05). The expression of ALP showed higher level expression in Ca-P coated surface by IBAD method. Cells grown on Ca-P coated surface by IBAD method were uniformly distributed and developed a very close layer. Conclusion: These experiments showed better performances of Ca-P coated surface by IBAD method with respect to Ca-P coated surface by Sol-gel process. Ca-P coated surface by IBAD method appear to give rise more mature osteoblast characteristics and might result in increased bone growth and bone-implant contact.