• Korean Journal of Optics and Photonics
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• v.29 no.2
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• pp.58-63
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• 2018

As the quantum volume increases, we are about to use quantum computers for real applications. Therefore, it is necessary to investigate how much quantum-computational gain is achievable in the near future. In this work, we analyze a fault-tolerant quantum computing method for near-term applications such as the ground-state estimation problem. Based on quantitative analysis, we find that it is still necessary to improve the current fault-tolerant quantum computing. This work also discusses which parts should be improved to improve quantum computing performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.499-499
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• 2012

This study was evaluated on etcher of capacitive coupled plasmas with OES (Optical Emission Spectroscopy) and impedance by VI probe that are widely used for process control and monitoring at semiconductor industry. The experiment was operated at conventional Ar and C4F8 plasma with variable change such as pressure and addition of gas (Atmospheric Leak: N2 and O2), RF, pressure, that are highly possible to impact wafer yield during wafer process, in order to observe OES and VI Probe signals. The sensitivity change on OES and Impedance by Vi probe was analyzed by statistical method to determine healthy of process. The main goal of this study is to understand unwanted tool performance to eventually improve productive capability. It is important for process engineers to actively adjust tool parameter before any serious problem occurs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.1-5
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• 2011

To enter next process control, numerous approaches, including run-to-run (R2R) process control and fault detection and classification (FDC) have been suggested in semiconductor manufacturing industry as a facilitation of advanced process control. This paper introduces a novel type of optical plasma process monitoring system, called plasma eyes chromatic system (PECSTM) and presents its potential for the purpose of fault detection. Qualitatively comparison of optically acquired signal levels vs. process parameter modifications are successfully demonstrated, and we expect that PECSTM signal can be a useful indication of onset of process change in real-time for advanced process control (APC).

• Journal of Sensor Science and Technology
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• v.32 no.1
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• pp.55-61
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• 2023

The objective of this study is to determine the concentrations of mixed gases by establishing a diagnosis method of a transformer using tunable-wavelength optical infrared sensors. Absorption of infrared light by methane, acetylene, and ethylene gases injected is measured from the outputs of the infrared sensors. Regression analysis equations of the gas concentrations are acquired from their respective measured absorption. The obtained concentrations are as follows: -3-9 % errors above 600 ppm(methane), 3 % errors above 1200 ppm(acetylene), and 10 % errors above 500 ppm(ethylene). The concentration inference equations obtained using the individual gases are applicable when the absorption wavelength bands do not overlap. The results of the fault analysis of a transformer using the Duval triangle method and the tunable infrared gas sensors are as follows: temperature faults with -1-1% errors and energy faults with -7-7 % errors.

• Economic and Environmental Geology
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• v.45 no.5
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• pp.487-502
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• 2012

This paper is focused on mineral compositions, microstructures and distributional characters of remained grains in the fault rocks collected from a fault developed in Yongdang-ri, Yangbuk-myeon, Gyeongju City, Korea, using X-ray diffraction (XRD), optical microscope, laser grain size analysis and fractal dimension analysis methods. The exposed fault core zone is about 1.5 meter thick. On the average, the breccia zone is 1.2 meter and the gouge zone is 20cm thick, respectively. XRD results show that the breccia zone consists predominantly of rock-forming minerals including quartz and feldspar, but the gouge zone consists of abundant clay minerals such as chlorite, illite and kaolinite. Mineral vein, pyrite and altered minerals commonly observed in the fault rock support evidence of fault activity associated with hydrothermal alteration. Fractal dimensions based on box counting, image analysis and laser particle analysis suggest that mineral grains in the fault rock underwent fracturing process as well as abrasion that gave rise to diminution of grains during the fault activity. Fractal dimensions(D-values) calculated by three methods gradually increase from the breccia zone to the gouge zone which has commonly high D-values. There are no noticeable changes in D-values in the gouge zone with trend being constant. It means that the bulk-crushing process of mineral grains in the breccia zone was predominant, whereas abrasion of mineral grains in the gouge zone took place by continuous fault activity. It means that the bulk-crushing process of mineral grains in the breccia zone was predominant, whereas abrasion of mineral grains in the gouge zone took place by continuous fault activity. Mineral compositions in the fault zone and peculiar trends in grain distribution indicate that multiple fault activity had a considerable influence on the evolution of fault zones, together with hydrothermal alteration. Meanwhile, fractal dimension values(D) in the fault rock should be used with caution because there is possibility that different values are unexpectedly obtained depending on the measurement methods available even in the same sample.

• The Transactions of the Korea Information Processing Society
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• v.7 no.9
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• pp.2958-2968
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• 2000

To effectively supervise WDM systems requires that the alarm signals for each optical transport network layer is considered. The related recommendations and studies for alarm signals are defining fundamental functions without specifying the structure and configuration of the supervisory channel. In this paper, we propose the detailed alarm signals and propagation flows for each optical transport network layer. We also describe the structure of overhead and the configuration of supervisory channel. Our proposals are based on the ITU T requirements of optical transport network and the supervisory schemes of terminal & add-drop systems. We show that our proposed schemes effectively performs supervisory functions for various fault conditions which will occur in terminal & add-drop typed WDM systems.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.9B
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• pp.793-805
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• 2003

In OBS (Optical Burst Switching) networks which decouple the burst from its header, the fault of a fiber link can lead to the failure of all the light-path that traverses the fiber. Because each light-path is expected to operate at a rate of a few Gbps by using WDM (Wavelength Division Multiplexing) technology, any failure may lead to large data loss. Therefore, an efficient recovery scheme must be provided. In this paper, we analyze network utilization and BCP (Burst Control Packet) loss rate according to each link failure by applying the conventional restoration schemes in OBS networks. And through these simulation results, an ASPR scheme is proposed improve the fault management scheme in terms of recovery time and throughput. Finally, We compare the performance of our proposed scheme with that of the conventional one with respect to burst loss rate, resource utilization and throughput by OPNET simulations.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.523-523
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• 2012

As the wafer geometric requirements continuously complicated and minutes in tens of nanometers, the expectation of real-time add-on sensors for in-situ plasma process monitoring is rapidly increasing. Various industry applications, utilizing plasma impedance monitor (PIM) and optical emission spectroscopy (OES), on etch end point detection, etch chemistry investigation, health monitoring, fault detection and classification, and advanced process control are good examples. However, process monitoring in semiconductor manufacturing industry requires non-invasiveness. The hypothesis behind the optical monitoring of plasma induced ion current is for the monitoring of plasma induced charging damage in non-invasive optical way. In plasma dielectric via etching, the bombardment of reactive ions on exposed conductor patterns may induce electrical current. Induced electrical charge can further flow down to device level, and accumulated charges in the consecutive plasma processes during back-end metallization can create plasma induced charging damage to shift the threshold voltage of device. As a preliminary research for the hypothesis, we performed two phases experiment to measure the plasma induced current in etch environmental condition. We fabricated electrical test circuits to convert induced current to flickering frequency of LED output, and the flickering frequency was measured by high speed optical plasma monitoring system (OPMS) in 10 kHz. Current-frequency calibration was done in offline by applying stepwise current increase while LED flickering was measured. Once the performance of the test circuits was evaluated, a metal pad for collecting ion bombardment during plasma etch condition was placed inside etch chamber, and the LED output frequency was measured in real-time. It was successful to acquire high speed optical emission data acquisition in 10 kHz. Offline measurement with the test circuitry was satisfactory, and we are continuously investigating the potential of real-time in-situ plasma induce current measurement via OPMS.

• Proceedings of the IEEK Conference
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• 2003.07c
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• pp.2685-2688
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• 2003

A PC-based system for both monitoring and controlling SAUV is developed. The developed system is located on a ship and communicate with the SAUV through optical link through which the system sends motion command and receives video data, SSBL and Digital I/O data. The motion command includes velocity data and direction data. The overall system is developed with the intention of easy operation for operator and safe motion of SAUV. The easy operation is realized by GUI-based interface and the safe motion is realized by fault tolerant capability.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.142.2-142.2
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• 2015

Plasma etch endpoint detection (EPD) of SiO2 and PR layer is demonstrated by plasma impedance monitoring in this work. Plasma etching process is the core process for making fine pattern devices in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a simple, non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist (PR), dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0 % oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD.