• Korean Journal of Optics and Photonics
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• v.19 no.4
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• pp.315-319
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• 2008

We investigate theoretically the power consumption of a notch filter using a thermo-optic long-period grating, which is induced by a heater array consisting of periodic heaters and pads made of metal thin-film. Since the power consumed by the heater array is converted to joule heat that generates the thermo-optic long-period grating, the characteristics of the notch filter are dynamically controlled by adjusting it. The power necessary for appropriate coupling efficiency depends on the parameters of the heater array, which are the width and length of a heater, pad width, and the thickness of the thin-film. We explain an approximate method of analyzing the influence of the parameters on the consumed power. Using the analysis method, we simulate the change of the power depending on the parameters. From the simulation, we suggest a few guidelines on the parameters required to reduce the power.

• Current Applied Physics
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• v.18 no.12
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• pp.1473-1479
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• 2018

Recently multiferroic materials have attract great interest for the applications on memorial, spintronic and magneto-electric sensor devices for their spontaneous magneto-electric coupling properties. Research and development of the various kinds of multiferroics are indispensable factor for a new generation multifunctional materials. In this research, mechanical, electronic, magnetic and nonlinear optical properties of La modified $BiLaFe_2O_6$ (BLFO) and Mn modified $Bi_2FeMnO_6$ (BFMO) were studied as new members of multiferroic $BiFeO_3$ (BFO) series by first-principles calculations, and compared with the pure BFO to discover the optimized properties. Our results show that BLFO and BFMO have good mechanical stability as revealed by elastic constants that satisfy the stability criteria. All these compounds exhibit anisotropic and ductile nature. The enhanced properties by La and Mn substitution, such as increased hardness, improved magnetism, decreased band gap and comparable second harmonic generation responses reveal that the new multiferroic members of BLFO and BFMO would get wider application than their BFO counterpart. Our study is expected to providing an appropriate mechanical reference data as guidance for engineering of high efficiency multifunctional devices with the BFO series.

• Korean Journal of Optics and Photonics
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• v.11 no.4
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• pp.271-278
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• 2000

We have fabricated and analyzed the lasing characteristics of 1.3$\mu\textrm{m}$ Spot-Size-Converter (SSC) integrated Fabry-Perot (FP) laser diodes, which are very promising light sources for optical subscriber networks. SSC-LDs has been developed by BIB (buttjoint-built-in) coupling and selective MOVPE growth. High-performances were achieved such as the slope efficiency from the SSC facet of 0.23-0.32 mW/mA, the full-width at the half maximum of the far-field pattern (FFP) of 9.5$^{\circ}$~12.3$^{\circ}$, the alignment tolerances of $\pm$2.3$\mu\textrm{m}$ and $\pm$2.5$\mu\textrm{m}$ within the extra-coupling loss of 1 dB for the vertical and parallel directions, respectively. These experimental results were compared to theoretical ones in order to clarify the operational problems and give a good design direction of the fabricated SSC-LDs. It was revealed that an asymmetric output power from the facets, an irrelevancy of FFP and the waveguide structure around SSC facet region, and a poor temperature characteristics were originated from the scattering in the BIB and SSC sections and SHB effect in the active section for the first time.t time.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.340-343
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• 2002

We report here our recent progress in the development and commercialization of polyfluorenes emitting red, green and blue (ROB) colors as materials for light emitting diodes (LEDs). Our patented version of the Suzuki coupling process has been used to synthesize a variety of fluorenebased homopolymers and copolymers emitting colors across the entire visible spectrum. The optical and electronic properties of the polymers are tailored through selective incorporation of different aromatic units into the polyfluorene backbone. Our latest green emitter, reported herein, provides very efficient devices with a low turn-on voltage of 2.25 V, a peak efficiency of 10.5 Cd/A at 6,600 Cd/$m^2$ at 4.85 V. These devices maintain an efficiency of greater than 10 Cd/A up to 50,000 Cd/$m^2$ and demonstrate very good stability as exemplified by a device half-life of greater than 1,500 hours starting from 1,100 Cd/$m^2$. Considerable progress has also been made with red and blue emitters and will be the subject of this presentation.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.3041-3046
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• 2014

Blue emitting materials, 9,10-bis-biphenyl-4-yl-anthracene (AC-P), 9,10-bis-[1,1';4',1"]terphenyl-4-yl-anthracene (AC-DP), and 9,10-bis[3",5"-deiphenyltriphenyl-4'-yl]anthracene (AC-TP) were synthesized through boration and Suzuki aryl-aryl coupling reaction. EL performance of blue light-emitters was optimized and improved by varying the chemical structures of the side groups. In the thin film state, the three materials exhibit $PL_{max}$ values in the range of 442-456 nm. EL device with the synthesized compounds in the following configuration was fabricated: ITO/4,4',4"-tris(N-(2-naphthyl)-N-phenylamino)triphenylamine (2-TNATA) 60nm/N,N'-bis (naphthalene-1-yl)-N,N'-bis(phenyl)benzidine (NPB) 15nm/synthesized blue emitting materials (30nm)/1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBi) 20nm/LiF 1nm/Al 200nm. The current efficiency and C.I.E. value of AC-TP were 3.87 cd/A and (0.15, 0.12). A bulky and non-planar side group helps to prevent ${\pi}-{\pi}^*$ stacking interaction, which should lead to the formation of more reliable amorphous film. This is expected to have a positive effect on the high efficiency of the operating OLED device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Bulletin of the Korean Chemical Society
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• v.30 no.9
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• pp.1933-1938
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• 2009

New $\pi$-conjugated polymer with vinylene linkage, poly((10-hexyl-3,7-phenothiazine)-alt-(4-(4-butyl-phenyl)- 3,5-diphenyl-4H-[1,2,4]triazole)-3,5-vinylene) (PTV-TAZ) was synthesized by the Heck coupling reaction. The photoluminescence (PL) maximum wavelength and the band gap energy of PTV-TAZ film were 555 nm and 2.41 eV, respectively. The HOMO energy level of PTV-TAZ was -4.99 eV, which was slightly lower than that of PTV (-4.89 eV). Electron deficient aromatic 1,2,4-triazole (TAZ) in the polymer backbone does not affect the HOMO energy level significantly. The maximum efficiency and brightness of double layer structured electroluminescent (EL) device (ITO/PEDOT (30 nm)/PTV-TAZ (60 nm)/Al) were 0.247 cd/A and 553 cd/$m^2$, respectively, which were significantly higher than those of the device based PTV (1.65 ${\times}\;10^{-4}$ cd/A and 4.3 cd/$m^2$). This is due to that TAZ unit improves electron transporting ability in the emissive layer. The turn-on voltage (defined as the voltage required to give a luminescence of 1 cd/$m^2$) of brightness of the device based on PTV-TAZ was 12.0 V, which was similar to that the based on PTV (11.5 V). This is due to that the ionization potential of PTV-TAZ is very similar to that of PTV.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.157-157
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• 2010

Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.227-233
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• 1992

The simulation code was developed for the development of the split-disk geometry glass amplifier, which could design the laser apparatus and analyze the properties of the laser system. The flashlamp emission energy at the short wavelength region must be reduced, while maintaining a current density between 2000 and 4000 A/$\textrm{cm}^{2}$, in order to reduce the thermal loading in the laser glass and to raise the coupling efficiency between the emission spectrum of the flashlamps and the absorption spectrum of the laser glass. By cutting the laser glass into three equal pieces, the temperature rise in the laser glass dropped by 70% due to the efficient removal of the heat in the laser glass. It was found that the $Nd^{3+}$ doping rate of each laser glass should be properly selected and the optimum value of the product of the absorption coefficient $\alpha$ and the thickness d of the laser glass is about 0.26 in the split-disk geometry.

• Korean Journal of Optics and Photonics
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• v.19 no.1
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• pp.73-79
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• 2008

We propose a novel metal-waveguide structure for sustaining long-range surface-plasmon-polaritons (LRSPP). The LRSPP waveguides are composed basically of two asymmetric metal layers: a very thin, finite-width metal strip on top of a metal slab with a dielectric gap in between them. Mode cut-off of LRSPPs excited on the double-metal waveguides is characterized by consistently investigating their dispersion relations and mode profiles. We also confirm experimentally the existence of low-loss, well-confined LRSPP modes by measuring far-field outputs emerging from an edge of the asymmetric double-metal waveguides. In the experiment, we have fabricated several types of SPP waveguide devices including straight lines, S-bend, and Y-branch consisting of gold strips (20 nm-thick, $5{\mu}m$-wide). Overall propagation loss of the proposed double-metal waveguides is quite comparable to that of single metal-strip waveguides, in addition the mode sizes can be tuned by increasing the core-insulator gap between the metal layers to get a higher coupling efficiency with a single-mode fiber in telecom wavelength. The proposed LRSPP waveguides may open up realization of SPP-waveguide sensors or nonlinear SPP-devices by replacing the core-insulator with a bio-fluid or a nonlinear medium.