• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.109-112
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• 2003

Wavelength division multiplexing technology is a promising solution for the next generation optical networks. Optical buffer is a key component for optical packet switching system. It can be used to hold optical packets and to resolve the contention of optical packets. In this paper, we implemented a optical buffer using optical wavelength converters and demonstrated that optical packets are delayed successfully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.111-118
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• 2002

A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.180-181
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• 1999

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.5A
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• pp.514-520
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• 2004

In WDM networt a WDM buffer is one of essential elements for realizing all-optical packet switching system. In this paper, we propose and demonstrate a single loop type all-optical WDM buffer system. The proposed one consists of NOLM and feedback loop, and provides more than 40 turns buffering (more than 20${\mu}\textrm{s}$) for single input pulse (1550nm, width: 20㎱) before selected by control signal pulse (1553nm, width: 30㎱).

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.24.1-24.1
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• 2009

The zinc oxide (ZnO) material as the II-VI compound semiconductor is useful in various fields of device applications such as light-emitting diodes (LEDs), solar cells and gas sensors due to its wide direct band gap of 3.37eV and high exciton binding energy of 60meV at room temperature. In this study, the ZnO nanorods were deposited onto homogenous buffer layer/Si(100) substrates by a hydrothermal synthesis. The Effects of the buffer layer annealing and post annealing temperature on the structural and optical properties of ZnO nanorods grown by a hydrothermal synthesis were investigated. For the buffer layer annealing case, the annealed buffer layer surface became rougher with increasing of annealing temperature up to $750^{\circ}C$, while it was smoothed with more increasing of annealing temperature due to the evaporation of buffer layer. It was found that the roughest surface of buffer layer improved the structural and optical properties of ZnO nanorods. For the post annealing case, the hydrothermally grown ZnO nanorods were annealed with various temperatures ranging from 450 to $900^{\circ}C$. Similarly in the buffer layer annealing case, the post annealing enhanced the properties of ZnO nanorods with increasing of annealing temperature up to $750^{\circ}C$. However, it was degraded with further increasing of annealing temperature due to the violent movement of atoms and evaporation. Finally, the buffer layer annealing and post annealing treatment could efficiently improve the properties of hydrothermally grown ZnO nanorods. The morphology and structural properties of ZnO nanorods grown by the hydrothermal synthesis were measured by atomic force microscopy (AFM), field emission scanning electron microscopy (SEM), and x-ray diffraction (XRD). The optical properties were also analyzed by photoluminescence (PL) measurement.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.6A
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• pp.862-869
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• 2000

In a switch routing system, buffers are indispensible to prevent signal collision during routing process. For a photonic switching system, optical buffers are also indispensible if the system requires an active routing rather than a simple optical cross-connect(OXC). To cope with WDM technologies in optical comminication systems in these days, photonic switching system also has to deal with WDM signals. Therefore, optical buffers needed in a switching system has to be routed to the same output. For the receiver to recognize these signals separately, parallel WDM signals during rearrangement process. In this paper, we propose a novel all optical WDM output buffer whose structure, hardware, SNR and BER characteristics are improved a lot comparing with those of previously reported ones. From the analysis of the proposed buffer, the new buffer can hold 255 WDM cells keeping BER of 10-9 as long as a contrast ratio(gain on-off ratio) of optical gate(semiconductor optical amplifier) nside the buffer is 30dB.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.9-14
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• 1998

Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.

• Journal of the Optical Society of Korea
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• v.20 no.3
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• pp.431-434
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• 2016

Tris-HCl buffer solution is extensively used in biochemistry and molecular biology to maintain a stable pH for biomolecules such as nucleic acids and proteins. Here we report on the high-precision THz dielectric spectroscopy of a 10 mM Tris-HCl buffer. Using a double Debye model, including conductivity of ionic species, we measured the complex dielectric functions of Tris-HCl buffer. The fast relaxation time of water molecules in Tris-HCl buffer is ~20% longer than that in pure water while the slow relaxation time changes little. This means that the reorientation dynamics of Tris-HCl buffer with such a low Tris concentration is quite different from that of pure water.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.6
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• pp.291-295
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• 2015

IGZO single layer and $IGZO/TiO_2$ bi-layered films were deposited on glass substrate at room temperature with radio frequency magnetron sputtering to investigate the effect of $TiO_2$ buffer layer on the electrical and optical properties of the films. For all deposition, the thickness of IGZO and $TiO_2$ Buffer layer was kept at 100 and 5 nm, respectively. In a comparison of figure of merit, IGZO films with a 5-nm-thick $TiO_2$ buffer layer show the higher figure of merit ($8.40{\times}10^{-5}{\Omega}^{-1}$) than that of the IGZO single layer films ($6.23{\times}10^{-5}{\Omega}^{-1}$) due to the enhanced optical transmittance and the decreased sheet resistance of the films. The observed results mean that a 5 nm thick $TiO_2$ buffer layer in the $IGZO/TiO_2$ films results in better electrical and optical performance than conventional IGZO single layer films.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.10
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• pp.95-102
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• 2003

The buffering is a promising solution to resolve the contention problem in optical network. we study the packet loss probability and the dimensioning of optical buffer using a Fiber Delay Line for variable length packet. In this paper, we study the relation between the granularity and the loss of FDL buffer in Single-Stage FDL buffer and propose the Single-Bundle Multi-Stage FDL buffer. The Multi-Stage FDL buffer is too early yet to apply to the current backbone network, considering the current technology in view of costs. but we assume that the above restriction will be resolved in these days. The appropriate number of delay and pass line for a dimensioning is based on a amount of occupied time by packets. Once more another multi-stage FDL buffer is proposed, Split-Bundle multi-stage FDL buffer. The Split-Bundle ms-FDL buffer is more feasible for a FDL buffer structure, considering not only a size of switching matrix but also a bulk of switching element. its feasibility will be demonstrated from a loss probability.