• 전기학회논문지
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• 제65권10호
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• pp.1694-1696
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• 2016

Present thin film solar cells with hydrogenated amorphous silicon oxide (a-SiO:H) as an absorber suffer from low fill factor(FF) of 61~64 [%] in spite of its benefits related to high open circuit voltage ($V_{oc}$). Since degraded quality of a-SiO:H absorber by alloying with oxygen can affect the FF, we aimed to achieve high photosensitivity by minimizing $CO_2$ gas addition. Improving optical gap($E_{opt}$) has been attained by strong hydrogen dilution combined with lowering substrate temperature down to 100 [$^{\circ}C$]. Small amount of the $CO_2$ was added in order to disturb microcrystalline formation by high hydrogen dilution. The developed a-SiO:H has high photosensitivity (${\sim}2{\times}10^5$) and high $E_{opt}$ of 1.85 [eV], which contributed to attain remarkable FF of 74 [%] and high $V_{oc}$ (>1 [V]). As a result, high power conversion efficiency of 7.18 [%] was demonstrated by using very thin absorber layer of only 100 [nm], even though we processed all experiment at extremely low temperature of 100 [$^{\circ}C$].

• 한국재료학회지
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• 제23권1호
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• pp.35-40
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• 2013

In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage ($V_{oc}$) was observed when the wafer thickness was thinned from $170{\mu}m$ to $50{\mu}m$. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied $V_{oc}$ of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for $50{\mu}m$ c-Si substrate, and 0.704 V for $170{\mu}m$ c-Si. The $V_{oc}$ in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of $V_{oc}$ in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1356-1364
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• 2014

A new conjugated copolymer, poly{4,8-bis(triisopropylsilylethynyl)benzo[1,2-b:4,5-b']dithiophene-alt-4,7- bis(5-thiophen-2-yl)-5,6-difluoro-2-(heptadecan-9-yl)-2H-benzo[d][1,2,3]triazole} (PTIPSBDT-DFDTBTz), is synthesized by Stille coupling polycondensation. The synthesized polymer has a band gap energy of 1.9 eV, and it absorbs light in the range 300-610 nm. The hole mobility of a solution-processed organic thin-film transistor fabricated using PTIPSBDT-DFDTBTz is $3.8{\times}10^{-3}cm^2V^{-1}s^{-1}$. Bulk heterojunction photovoltaic cells are fabricated, with a conventional device structure of ITO/PEDOT:PSS/polymer:$PC_{71}BM$/Ca/Al ($PC_{71}BM$ = [6,6]-phenyl-$C_{71}$-butyric acid methyl ester); the device shows a power conversion efficiency (PCE) of 2.86% with an open-circuit voltage ($V_{oc}$) of 0.85 V, a short-circuit current density ($J_{sc}$) of 7.60 mA $cm^{-2}$, and a fill factor (FF) of 0.44. Inverted photovoltaic cells with the structure ITO/ethoxylated polyethlyenimine/ polymer:$PC_{71}BM/MoO_3$/Ag are also fabricated; the device exhibits a maximum PCE of 2.92%, with a $V_{oc}$ of 0.89 V, a $J_{sc}$ of 6.81 mA $cm^{-2}$, and an FF of 0.48.

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1449-1454
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• 2014

The co-sensitization of N719 with a cyclic thiourea functionalized organic dye, coded AZ5, for dye-sensitized solar cells (DSSCs) was demonstrated. Due to its intensive absorption in ultraviolet region, AZ5 could compensate the loss of light harvest induced by triiodide, thereby the short-circuit photocurrent density ($J_{sc}$) was increased for co-sensitized (N719+AZ5) DSSC. Moreover, the electron recombination and dye aggregation were retarded upon N719 cocktail co-sensitized with AZ5, thus the open-circuit voltage ($V_{oc}$) of co-sensitized device was enhanced as well. The increased $J_{sc}$ (17.9 $mA{\cdot}cm^{-2}$) combined with the enhanced $V_{oc}$ (698 mV) ultimately resulted in an improved power conversion efficiency (PCE) of 7.91% for co-sensitized DSSC, which was raised by 8.6% in comparison with that of N719 (PCE = 7.28%) sensitized alone. In addition, co-sensitized DSSC exhibited a better stability than that of N719 sensitized device probably due to the depression of dye desorption.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• ETRI Journal
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• 제41권2호
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• pp.254-261
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• 2019

Distinct from conventional energy-harvesting (EH) technologies, such as the use of photovoltaic, piezoelectric, and thermoelectric effects, betavoltaic energy conversion can consistently generate uniform electric power, independent of environmental variations, and provide a constant output of high DC voltage, even under conditions of ultra-low-power EH. It can also dramatically reduce the energy loss incurred in the processes of voltage boosting and regulation. This study realized betavoltaic cells comprised of p-i-n junctions based on silicon carbide, fabricated through a customized semiconductor recipe, and a Ni foil plated with a Ni-63 radioisotope. The betavoltaic energy converter (BEC) includes an array of 16 parallel-connected betavoltaic cells. Experimental results demonstrate that the series and parallel connections of two BECs result in an open-circuit voltage $V_{oc}$ of 3.06 V with a short-circuit current $I_{sc}$ of 48.5 nA, and a $V_{oc}$ of 1.50 V with an $I_{sc}$ of 92.6 nA, respectively. The capacitor charging efficiency in terms of the current generated from the two series-connected BECs was measured to be approximately 90.7%.

• 한국재료학회지
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• 제28권11호
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Korean Chemical Engineering Research
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• 제44권2호
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• pp.179-186
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• 2006

$TiO_2$를 나노튜브(nanotube)와 나노입자(nanoparticle)의 두 가지 형태로 제조하여 닥터 브레이드 방법과 $450^{\circ}C$에서의 소결 공정을 통하여 다공성막으로 제조하였다. 이 다공성막을 작용물질로 사용하여 염료감응형 태양전지를 제조하고 그 특성을 조사하였다. $TiO_2$ 나노입자는 수소화 티탄염 나노튜브를 $180^{\circ}C$에서 24시간 동안 가수열분해 처리함으로써 합성하였다. 이 $TiO_2$ 나노입자를 다공성막으로 사용하여 제작한 염료감응형 태양전지의 에너지 효율(${\eta}$)은 8.07％이며, 개방전압(open-circuit potential, $V_{OC}$), 단락전류(short-circuit current, $I_{SC}$)와 fill factor(FF) 값은 각각 0.81 V, $18.29mV/cm^2$와 66.95％이었다. 나노튜브 $TiO_2$를 제조할 경우에는 NaOH 용액의 농도를 3M과 5M로 변화시켰다. 그 결과 3M NaOH 용액에서 합성된 나노튜브 $TiO_2$를 다공성막으로 사용하여 제작된 염료감응형 태양전지의 에너지 효율(${\eta}$)은 6.19％이었으며, $V_{OC}$, $IV_{SC}$와 FF 값은 각각 0.77 V, $12.41mV/cm^2$와 64.49％이었다. 반면에 5 M NaOH에서는 전자이동성이 좋지 않아 효율이 4.09％로 감소하였다. 본 연구 결과 가수열분해법에 의해 제조한 $TiO_2$ 나노입자로 제조한 염료감응형 태양전지의 효율이 가장 높았다.

• 한국진공학회지
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• 제22권1호
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• pp.37-44
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• 2013

본 연구에서는 양자점(quantum dot, QD)에서의 전하트랩이 태양전지의 특성에 미치는 영향을 조사하기 위하여, GaAs 모체 태양전지(MSC)의 활성층에 InAs/GaAs QD을 삽입한 $p^+-QD-n/n^+$ 태양전지(QSC)를 제작하여 그 특성을 비교 조사하였다. Stranski-Krastanow (SK)와 준단층(quasi-monolayer, QML)의 2종류 QD를 도입하였으며, 표준 태양광(AM1.5)에서 얻은 전류-전압 곡선으로부터 태양전지의 특성인자(개방전압($V_{OC}$), 단락전류($I_{SC}$), 충만도(FF), 변환효율(CE))를 결정하였다. SK-QSC의 FF값은 80.0%로 MSC의 값(80.3%)과 비슷한 반면, $V_{OC}$와 $J_{SC}$는 각각 0.03 V와 $2.6mA/cm^2$만큼 감소하였다. $V_{OC}$ 및 $J_{SC}$ 감소 결과로 CE는 2.6% 저하되었는데, QD에 의한 전하트랩이 주요 원인으로 지적되었다. 전하트랩을 완화시키기 위한 구조로서 QML-QD 기반 태양전지를 본 연구에서 처음 시도하였으나, 예측과는 달리 부정적 결과를 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.114-116
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• 1992

ITO/TiO$_2$/Se solar cell were fabricated by vacuum deposition method, the Se and TiO$_2$were deposited on the ITO/Glass. Prior to the electrical properties of film, the provide Te between the ITO and the Se film were deposited by substrate temperature 20[$^{\circ}C$] and evaporation time 15[min], next time TiO$_2$ were treated by rf-magnetron sputtering in substrate temperature 250[$^{\circ}C$]. Fabricated ITO/TiO$_2$/Se solar cell were as follows : Open Voltage V$\_$oc/=848[mV], Short Circuit Current I$\_$sc/=10.79[mA/$\textrm{cm}^2$]. Fill Factor FF=0.518, energy conversion efficiency η=4.74[%] under the illumination of AM 1.