• Title/Summary/Keyword: On-dimer

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Catechin Dimer (Catechin 이합체)

  • Ahn, Byung-Zun
    • Korean Journal of Pharmacognosy
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    • v.10 no.2
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    • pp.41-53
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    • 1979
  • A 6', 8a-bonded catechin dimer was synthesized by action of phenoloxidase on 2mol (+)-catechins. The same dimer and other two dimers which are also 6', 8a-bonded were isolated from the fresh cortex of Quercus robur. The 4, 8a-bonded and the etherified 4, 8a-bonded dimers were isolated from it. It was discussed about the meaning of the enzymatically produced 6', 8a-bonded dimers in plant cell. The isolated dimers are as following: 1. 6', 8a-bonded dimers: (+)-catechin-(+)-catechin-6', 8a-dimer(IX), (+)-catechin-(+)-gallocatechin-6', 8a-dimar (XIII), (+)-gallocatechin-(+)-catechin-6', 8a-dimer(XIV). 2. 4, 8a-bonded dimers: (+)-catechin-(+)-catechin-4, 8a-dimer(X), (-)-epicatechin-(+)-catechin-4, 8a-dimer (XI), (+) -galloatechin-(+)-catechin-4, 8a-dimer (XII). 3. 4,8a-bonded dimers with ether linkage: etherified(+)-catechin-(+)-catechin-4, 8a-dimer (XV), etherifid (+)-catechin-(+)-gallocatechin-4, 8a-dimer (XVI), etherified (+)-gallocatechin-(+)-catechin-4, 6a-dimer (XVII).

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Theoretical Study of Cycloaddition Reactions of C60 on the Si(100)-2×1 Surface

  • Rashid, Mohammad Harun Or;Lim, Chul-Tack;Choi, Cheol-Ho
    • Bulletin of the Korean Chemical Society
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    • v.31 no.6
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    • pp.1681-1688
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    • 2010
  • Density functional theory was adopted to study the various surface products and their reaction channels focusing on the on-dimer configuration which has not been suggested before. Energetic results show that the most stable on-dimer configuration is the 6,6-[2+2] structure which resembles the typical [2+2] cycloaddition product. The 6,6-[2+2] product is also more stable than any other possible surface structures of inter-dimer configuration further suggesting its existence. Potential energy surface scan along various possible initial surface reactions show that some of the possible on-dimer surface products require virtually no reaction barrier indicating that initial population of on-dimer surface products is thermodynamically determined. Various surface isomerization reaction channels exist further facilitating thermal redistribution of the initial surface products.

The Effect of H₂O Chemisorption on the Reconstruction of the Si(100) Surface : a Theoretical Approach

  • 양성은;김호징
    • Bulletin of the Korean Chemical Society
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    • v.16 no.11
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    • pp.1028-1032
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    • 1995
  • The structure and electronic properties of the Si(100) surface is studied using the atom superposition and electron delocalization method. The energy released when the symmetric dimer surface is reconstructed to form the buckled dimer surface with p(2X2) symmetry is calculated to be 0.99 eV per dimer in the case of ideal clean surfaces. This indicates that the surface dimer buckling is intrinsic from the viewpoint of thermodynamics. The relaxation energy, when water is adsorbed on the clean symmetric dimer surface to form the buckled dimer surface, is 2.25 eV per dimer for appropriate coverages. These results show that H2O molecule could induce a reconstruction of the surface structure through adsorption. The buckling of the surface dimer is, therefore, more favorable under the existence of water vapour. This conclusion supports the recently obtained experimental observations by Chander et al.

Fluorescent Crack Sensor in a Polymeric Material (고분자 재료의 형광 크랙센서)

  • Cho, Sung-Youl;Kim, Ji-Eun;Kim, Joong-Gon;Chung, Chan-Moon
    • Polymer(Korea)
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    • v.32 no.2
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    • pp.189-192
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    • 2008
  • A styrylpyrylium salt (DHSP) was synthesized and then photodimerized to obtain a cyclobutane-type dimer (DHSP dimer). Methacryloyl group was incorporated into DHSP dimer to obtain DMSP dimer. Based on FT-IR analysis of a crosslinked DMSP dimer, it was considered that the cyclobutane structure reversed to styryl C=C bonds upon crack formation. Fluorescence measurement of DHSP in solid state (excitation at 385 nm) showed emission centered at 626 nm, while DHSP dimer revealed very weak emission. Fluorescent emission from microcracks in a film of crosslinked DMSP dimer was observed upon exposure to $330{\sim}385\;nm$ light.

Preparation and characterization of fullerene dimer [C120] by trichloroperbenzoic acid oxidation method

  • Oh, Won-Chun;Jung, Ah-Reum;Ko, Weon-Bae
    • Analytical Science and Technology
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    • v.20 no.2
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    • pp.124-130
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    • 2007
  • In this study, we present the preparation and characterization of oxidized fullerene and fullerene dimer [$C_{120}$]. From the XRD data, other weak peaks with pristine fullerene [$C_{60}$] peaks were observed in the X-ray diffraction patterns for fullerene dimer [$C_{120}$]. SEM micrographs for the fullerene dimer [$C_{120}$] indicated that practically all the surface state was shown the drastic morphology changes and its outer surface is clearly visible and resulted in clogging and frost-like formation. From the MALDI-TOF mass spectra, the differences in the spectra recorded on two kinds of fullerene are due to the oxidation including chemical bonding and bridging between the $C_{60}$ molecules. We also obtained additional information from FT-IR spectra on functional component on the chemically modified surface of oxidized fullerene and fullerene dimer [$C_{120}$].

The buckled structure of clean Si(001) surface : $a(2\times1)과\; c(4\times2)$ (깨끗한 Si(001) 표면의 buckled dimer 구조 연구 : $a(2\times1)과\; c(4\times2)$)

  • 김성수;김용욱;박노길;조원석;조원석;김주영;채근화;황정남;김기석
    • Journal of the Korean Vacuum Society
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    • v.7 no.1
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    • pp.5-10
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    • 1998
  • The geometric structure of dimer atoms on clean Si(001) surface was studied using CAICISS. We confirmed that dimer atoms were certainly buckled, and also found that asymmetry (2$\times$1) and c(4$\times$2) were coexisted. The intradimer bond length and the buckling angle of a dimer measured by CAICISS system were 2.3$\pm$0.1 $\AA$ and 18$\pm$$1^{\circ}$, respectively.

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Switching of the Dimer-row Direction through Sb-passivation on Vicinal Si(001) Surface of a Single Domain

  • Dugerjav, Otgonbayar;Kim, Hui-Dong;Seo, Jae-Myeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.186-186
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    • 2011
  • [100] 방향으로 4$^{\circ}$ 기울어진 Si(001)-2${\times}$1(vicinal surface)을 초고진공하(UHV)에서 청결하게 하고 열처리하면 rebonded-atom을 가진 DB double step과 이 step에 나란한 아홉 개의 dimer를 가진 평균 폭이 4.0 nm인 single-domain의 (001)-2${\times}$1 테라스의 면으로 재구조된다 [그림 a]. 본 연구에서는 이 표면 위에 Sb을 상온에서 증착하여 덮고 후열처리하면(2 ML, 500$^{\circ}C$ 10 분), Sb-dimer가 Si 표면을 한 층 덮고 (001) 테라스의 Sb-dimer 방향이 DA double-step과 수직을 이루는 1${\times}$2 구조를 이룬다는 사실을 STM으로 확인하였다 [그림 b]. 이러한 Sb-passivation의 효과는 표면 Si-dimer의 부분적으로 채워진 dangling-bond를 Sb-dimer의 완전히 채워진 고립쌍(lone-pair)으로 바꿈으로써 표면 자유 에너지를 줄이고, 나아가 계면 Si 층은 bulk에 유사하게 되는 데에 있다. 이 passivation 된 표면은 Ge/Si 등의 heteroepitaxy에 사용할 수 있고, 특히 single-domain을 유지하며 step 방향에 대해 평행인 dimer-row로 이루어져 있어서 원자나 전자의 이동에 비등방적 효과를 증가시킬 것이 예측된다.

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Study on the Structure of DNA Containing a Thymine Dimer and $T_4$ Endonuclense V * DNA Complex (Thymine Dimer를 포함한 DNA와 $T_4$ Endonuclease V * DNA 복합체의 구조에 관한 연구)

  • 이봉진;유준석;임형미
    • Biomolecules & Therapeutics
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    • v.2 no.1
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    • pp.28-33
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    • 1994
  • In order to obtain insight into the repair mechanism of DNA containing thymine photo-dimer, the conformation of the duplex d(GCGGTTGGCG).d(CGCCAACCGC) with a thymine dimer incorporated has been studied by proton NMR. NOE data show that, although the local environment around the thymine dimer is altered, the gross structural changes are relatively small. T$_4$endonuclease V exhibited a conformational change on complex formation with DNA. This conformational change occurred around histidine 16 which was close to tyrosine 129 located in the aromatic segment (WYKYY) near the C-terminus. It is likely that the interaction between T$_4$endonuclease V and DNA is strong since the complex was not dissociated up to 1.6 M NaCl.

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First-principles Study of the Structure and Growth Mechanism of Allyl Alcohol Lines on the H-terminated Si(001)

  • Choi, Yun-Ki;Choi, Jin-Ho;Cho, Jun-Hyung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.184-184
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    • 2011
  • Using first-principles density-functional calculations, we investigate the chain reaction mechanism of allyl alcohol (ALA) molecules on the H-terminated Si(001)-2${\times}$1 surface. Recently, it was reported [1] that allyl mercaptan (ALM) molecules show a self-directed line growth across the dimer rows through a chain reaction involving several reaction processes: (i) The created radical at the C atom is transferred to the S atom, (ii) the resulting S-centered radical easily abstracts an H atom from the neighboring dimer row, and (iii) the generated S-H group further reacts with the neighboring dimer row to produce the Si-S bond on the neighboring dimer row, accompanying the associative desorption of H2. This H2-desorption process creates a new DB on the neighboring dimer row, setting off the chain reaction across the dimer rows. In the present study, we find that although the structure of ALA with -OH functional is analogous to that of ALM with -SH functional, ALA and ALM lines show a difference in their growth direction. We predict that ALA undergoes the chain reaction to show a line growth along the dimer row, contrasting with the ALM line growth across the Si dimer rows. Our analysis shows that the different growth direction of ALA is due to the strong instability of oxygen radical intermediate, which prevents from growing across the dimer rows. Thus, we demonstrate that the stability of the radical intermediate plays a crucial role in determining the direction of molecular line growth.

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New Self-Directed Growth Mechanism of Molecular Lines across the Dimer Rows on H-terminated Si(001) Surface

  • Choi, Jin-Ho;Cho, Jun-Hyung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.301-301
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    • 2011
  • We present theoretical investigations of the self-assembled growth of one-dimensional (1D) molecular lines directed across the dimer rows on the H-terminated Si(001) surface [1]. Based on density-functional theory calculations, a new growth mechanism of the 1D acetylacetone line is proposed [2], which involves the radical chain reaction initiated at two dangling-bond sites on one side of two adjacent Si dimers. It is also enabled that, if an H-free Si dimer were employed as the initial reaction site, a 1D acetylacetone line can grow along the dimer row. Our findings represent the first insight into the growth of 1D molecular lines not only across but also along the dimer rows on the H-terminated Si(001) surface.

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