• 제목/요약/키워드: On-device analyzer

검색결과 133건 처리시간 0.025초

사용자 맞춤형 서버리스 안드로이드 악성코드 분석을 위한 전이학습 기반 적응형 탐지 기법 (Customized Serverless Android Malware Analysis Using Transfer Learning-Based Adaptive Detection Techniques)

  • 심현석;정수환
    • 정보보호학회논문지
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    • 제31권3호
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    • pp.433-441
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    • 2021
  • 안드로이드 어플리케이션은 생산성과 게임 등의 다양한 카테고리에 걸쳐 출시되며, 사용자는 개인의 사용 패턴에 따라 다양한 어플리케이션 및 악성코드에 노출된다. 반면 대부분의 분석 엔진은 기존에 존재하는 데이터셋을 활용하며, 주기적인 업데이트가 이루어진다고 해도 사용자의 선호도를 반영하지 않는다. 따라서 알려진 악성코드에 대한 탐지율은 높은 반면, 애드웨어와 같은 유형의 악성코드는 탐지가 어렵다. 또한 기존의 엔진은 서버를 거쳐야 하므로, 추가적인 비용이 발생하며, 사용자는 가용성과 실시간성을 보장받지 못하는 문제가 발생한다. 이러한 문제를 해결하기 위해 논문에서는 서버와 단 한번만의 통신이 요구되는 on-device 악성코드 분석과 전이학습을 통한 모델 재훈련을 수행하는 분석 시스템을 제안한다. 또한 해당 시스템은 디바이스 내부에서 디컴파일을 포함한 전체 프로세스가 이루어지므로, 서버 시스템에서의 부하를 분산할 수 있다. 이러한 분석 시스템을 구현하여 테스트한 결과, 전이 학습이전 기준 최대 90.3%의 정확도를 얻었으며, Adware 카테고리에 대하여 전이학습을 수행한 뒤 최대 95.1% 의 정확도로, 기존 대비 4.8% 높은 정확도를 얻을 수 있었다.

8-포트회로망을 이용한 온-웨이퍼형 DUT의 잡음파라미터 측정 (Measurement of the Noise Parameters of On-Wafer Type DUTs Using 8-Port Network)

  • 이동현;압둘-라흐만;이성우;염경환
    • 한국전자파학회논문지
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    • 제25권8호
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    • pp.808-820
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    • 2014
  • 본 논문에서는 10-dB 감쇠기 및 상용 패키지 된 MMIC 능동소자를 이용하여 구성된 증폭기, 2가지의 온-웨이퍼(on-wafer)형 DUT(Device-Under Test)를 구성하고, 이들의 잡음파라미터를 8-port 회로망을 이용하여 추출하는 방법을 제시하였다. 제작된 10-dB 감쇠기의 경우 수동소자이기 때문에, 이것의 S-파라미터를 측정하여 얻을 경우, 이것의 잡음파라미터를 알 수 있고, 또한 증폭기의 경우 이것의 잡음파라미터가 datasheet에 있다. 따라서 제안한 방법을 이용한 잡음파라미터 측정 결과에 대한 평가를 용이하게 할 수 있다. 기존 저자들에 의하여 발표된 6-포트회로망을 확장한 8-포트회로망을 이용한 잡음파라미터 측정은 사용된 8-포트회로망의 S-파라미터를 필요로 하는데, 동축형 DUT에 국한된다. 온-웨이퍼 프로브가 8-포트회로망에 삽입될 경우, 8-포트회로망의 S-파라미터 측정은 이종 형태의 커넥터를 갖는 8-포트회로망이 된다. 본 논문에서는 회로망 분석기(Network analyzer)의 Smart-cal 기능을 이용하여 8-포트회로망의 S-파라미터를 추출하였다. 측정된 잡음파라미터는 최소잡음지수, $NF_{min}$ 경우, 예상된 결과에 대하여 약 ${\pm}0.2dB$의 오차를 보인다. 다른 잡음파라미터는 주파수에 따라 예상된 결과와 근접하게 일치하는 결과를 보여주고 있다.

CAT 응용을 위한 신호처리 분석에 관한 연구 (A study on the DSP Analysis for the CAT application)

  • 전동근
    • 한국음향학회지
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    • 제14권2호
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    • pp.30-39
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    • 1995
  • 본 논문에서는 A/D변환 모듈, 신호처리 모듈, VXI 인터페이스 모듈의 하드웨어를 구성하였고 신호처리 모듈과 VXI 인터페이스 모듈 각각에 연산 및 제어용 소프트웨어를 구현하였다. FFT 분석 디바이스의 실시간 대역폭은 100KHZ라고 말할 수 있다. 샘플링을 200KHz에서 point수 2048의 연산 파라미터 하였을 때 20KHz 입력신호의 정현파, 삼각파 및 구형파에 대한 결과를 Hewlett-Packard 3562A Dynamic Signal Analyzer낱 이용한 FFT 분석결과와 각각 비교하였다 주파수 SPAN을 0-100KHz까지로 하고 출력범위를 -40dBV 에서 30dBV 까지로 하였을 때의 결과로서 매우 정확하게 분석됨을 알 수 있었으며, 입력주파수를 10KHz, 20KHz, 50KHz로 각각 주었을 때의 결과를 비교했을 때 원하는 결과를 얻을 수 있다.

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무전해 식각법으로 합성한 Si 나노와이어 Field Effect Transistor 유연소자의 특성 (Electrical Properties of Flexible Field Effect Transistor Devices Composed of Si Nanowire by Electroless Etching Method)

  • 이상훈;문경주;황성환;이태일;명재민
    • 한국재료학회지
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    • 제21권2호
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    • pp.115-119
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    • 2011
  • Si Nanowire (NW) field effect transistors (FETs) were fabricated on hard Si and flexible polyimide (PI) substrates, and their electrical characteristics were compared. Si NWs used as channels were synthesized by electroless etching method at low temperature, and these NWs were refined using a centrifugation method to get the NWs to have an optimal diameter and length for FETs. The gate insulator was poly(4-vinylphenol) (PVP), prepared using a spin-coating method on the PI substrate. Gold was used as electrodes whose gap was 8 ${\mu}m$. These gold electrodes were deposited using a thermal evaporator. Current-voltage (I-V) characteristics of the device were measured using a semiconductor analyzer, HP-4145B. The electrical properties of the device were characterized through hole mobility, $I_{on}/I_{off}$ ratio and threshold voltage. The results showed that the electrical properties of the TFTs on PVP were similar to those of TFTs on $SiO_2$. The bending durability of SiNWs TFTs on PI substrate was also studied with increasing bending times. The results showed that the electrical properties were maintained until the sample was folded about 500 times. But, after more than 1000 bending tests, drain current showed a rapid decrease due to the defects caused by the roughness of the surface of the Si NWs and mismatches of the Si NWs with electrodes.

PSA 기법에 근거한 생산라인상의 디지털 회로 보오드 검사전략에 대한 연구 (A Study on the Test Strategy of Digital Circuit Board in the Production Line Based on Parallel Signature Analysis Technique)

  • 고윤석
    • 대한전기학회논문지:시스템및제어부문D
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    • 제53권11호
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    • pp.768-775
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    • 2004
  • The SSA technique in the digital circuit test is required to be repeated the input pattern stream to n bits output nodes n times in case of using a multiplexor. Because the method adopting a parallel/serial bit convertor to remove this inefficiency has disadvantage of requiring the test time n times for a pattern, the test strategy is required, which can enhance the test productivity by reducing the test time based on simplified fault detection mechanism. Accordingly, this paper proposes a test strategy which enhances the test productivity and efficiency by appling PAS (Parallel Signature Analysis) technique to those after analyzing the structure and characteristics of the digital devices including TTL and CMOS family ICs as well as ROM and RAM. The PSA technique identifies the faults by comparing the reminder from good device with reminder from the tested device. At this time, the reminder is obtained by enforcing the data stream obtained from output pins of the tested device on the LFSR(Linear Feedback Shift Resister) representing the characteristic equation. Also, the method to obtain the optimal signature analyzer is explained by furnishing the short bit input streams to the long bit input streams to the LFSR having 8, 12, 16, 20bit input/output pins and by analyzing the occurring probability of error which is impossible to detect. Finally, the effectiveness of the proposed test strategy is verified by simulating the stuck at 1 errors or stuck at 0 errors for several devices on typical 8051 digital board.

KTX 운전자지원 단말기장치 통신프로토콜에 관한 연구 (A Study on communication Protocol of KTX TECA(Terminal Cabin))

  • 정성윤;박신호;김형인;김치태;강기석;이병원;이동수;정도원
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2007년도 춘계학술대회 논문집
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    • pp.1714-1721
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    • 2007
  • TECA (Terminal Cabin), the terminal device which offers the information to the driver about the condition of High Speed Train(KTX), analyzes the system of train and plays a role of corrective maintenance guideline to a driver when a breakdown occurs. It also supports the driver to decide the situation of the train by offering a necessary information, in communicating with MPU(Main Processor Unit). For Localization of TECA, it is necessary to analyze communication protocol between TECA and MPU. As a part of analysis, communication protocol between OBCS(on-board computer system) and add-on devices has analyzed for the first step. Also with protocol analyzer appropriate method was offered for TECA and MPU protocol analysis. Finally, by appling proposed method to the drivers consol suitability was verified.

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건식분말화 장치설계를 위한 $U_3O_8$ 분말의 미세입자 유동해석 (Analysis on the flow of $U_3O_8$ powder for design of the voloxidizer)

  • 김영환;정재후;홍동희;윤지섭
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2005년도 춘계학술대회 논문집
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    • pp.454-457
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    • 2005
  • Voloxidizer for hot cell demonstration that handle spend fuel of high radiation virulence in limited space should become a small size and not scatter in its exit. This study determine optimum velocity of $U_3O_8$ using Newton-Raphson Method. We have conducted fortran programing on the Newton-Raphson Method, obtained a theory results and, predicted optimum velocity on the particle size distribution of $U_3O_8$. We have conducted experimentation using acrylic experimental device for verification of theory method, sampled and analyzed using the particle size analyzer In the results, we have found maximum $5\~7\%$ error rate in the comparative value of theory and experimentation. Optimum velocity and experimental results of $U_3O_8$ for scatter prevention have applied for design of demonstration voloxidizer, and produced operation condition of voloxidizer.

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GaAs 공정을 이용한 IMT-Advances System용 전력분배기 설계 (Design of Power Divider for IMT-Advances System using GaAs Process)

  • 김창기;김남영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.184-184
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    • 2008
  • In this paper, a power divider with a multi-band and broadband are designed and fabricated using an InGaP/GaAs process. The design of this divider is based on multi-band because it is important in the next generation IMT-Advances system. In this design, power divider is fabricated with the frequency of 824 MHz to 894 MHz, 1.8 GHz to 2.2 GHz and 2.3 GHz to 2.4 GH for cellular, personal communication system (PCS) and Wireless Broadband Internet (WiBro). The topology of the designed power divider is based on the multi-section and fabricated using integrated passive device (IPD) library of nanoENS Inc. It is measured using network analyzer.

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Design and Implementation of Portable NMR Probe Magnet

  • Junxia, Gao;Yiming, Zhang;Jiashen, Tian
    • Journal of Magnetics
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    • 제22권1호
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    • pp.14-22
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    • 2017
  • The NMR's probe consists of the static magnetic field generator (magnetic source) and the RF coil. It is very strict for the homogeneity of the static magnetic field intensity of the magnetic source, so the cost of the magnetic source is more expensive in the entire nuclear magnetic resonance instrument. The magnetic source generally consists of electromagnet, permanent magnet and superconducting magnet. The permanent magnet basically needs not to spend on operation and maintenance and its cost of manufacture is much cheaper than the superconducting magnet. Therefore, the permanent magnet may be the only choice for the static magnetic field device if we want to use the magnetic resonance instrument as an analyzer for production by reducing price. A new probe magnet was developed on the basis of the permanent magnet ring in this paper to provide a technological way for reducing the manufacturing cost, weight and volume of the existing nuclear magnetic resonance instrument (including MRI) probe.

COMPARISON OF PLASMA-INDUCED SURFACE DAMAGES IN VARIOUS PLASMA SOURCES

  • Yi, Dong-Hyen;Lee, Jun-Sik;Kim, Sang-Kyun;Kim, Jae-Jeong
    • 한국표면공학회지
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    • 제29권5호
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    • pp.338-344
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    • 1996
  • This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.

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