• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.204-207
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• 2000

In this paper, we have studied the effect of doped with B-Bi-Zn on properties (microstructure, density, shrinkage, permeability as a function of frequency, etc.) of hexagonal-ferrite for high frequency chip-inductor material about several GHz. The permeability were analyzed by impedance analyzer(100 kHz~40 MHz) and network analyzer(30 MHz~3 GHZ). As a result of the characteristics, the B-Bi-Zn glass ceramic was used to lower the sintering temperature for additive as a function of frequency from 100 kHz to 1.8 GHz showed constant tends. The maximum imaginary value of complex permeability was observed near the resonance frequency of 2 GHz.

• Journal of information and communication convergence engineering
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• v.18 no.3
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• pp.201-206
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• 2020

This paper presents a new method for controlling the current of lighting LEDs without current sensors. This method can be used as backup against LED current sensor faults. LED lighting requires a circuit with a constant current in order to maintain the same brightness when the ambient temperature changes. Therefore, we propose a new current estimation method to provide backup in case of current sensor faults based on the calculation of the inductor current. In the fabricated circuit, the average current changes from 144.03 mA to 155.97 mA when the ambient temperature changes from 0℃ to 60℃. The application of this study can enable the fabrication of a driving IC for LEDs in the form of a single chip without sensing resistors. This is expected to reduce the complexity of the peripheral circuit and enable precise feedback control.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.11-15
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• 2002

3 V, 2.46GHz Low Noise Amplifier (LNA) have been designed for standard 0.35$\mu\textrm{m}$ CMOS process with one poly and four metal layers. This design includes on-chip biasing, matching network and multilayer spiral inductors. The single-ended amplifier provides a forward gain of 20.5dB with a noise figure 3.35dB, and an IIP3 of -6dBm while drawing 59mW total Power consumption

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.174-180
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• 2009

A new flexible electronics technology, named P-FCB (Planar Fashionable Circuit Board), is introduced. P-FCB is a circuit board technology implemented on the plain fabric patch for wearable electronics applications. In this paper, the manufacturing of P-FCB, and its electrical characteristics such as sheet resistance, maximum current density, and frequency characteristics are reported. The fabrication methods and their electrical characteristics of passive devices such as resistor, capacitor, and inductor in P-FCB are discussed. In addition, how to integrate silicon chip directly to the fabric for the flexible electronics system are described. Finally, examples of P-FCB applications will be presented.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.2
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• pp.45-49
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• 2014

In this work, a phase shifter radio-frequency integrated chip (RFIC) using a simple all-pass network is presented. As a tuning element of the phase shifter RFIC, tunable capacitors with a multi-layer dielectric of a para-/ferro-/para-electrics using a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film were utilized. In order to evaluate and analyze the fabricated phase shifter RFIC, the same elements such as an inductor and capacitor integrated into it are also fabricated and tested. The designed phase shifter RFIC was fabricated on a quartz substrate in the size of $1.16{\times}1.21mm^2$. As the test results, the maximum phase difference of $350^{\circ}$ is obtained at 15 V and its tuning frequency bandwidth is 90 MHz from 2.72 to 2.81GHz.

• Journal of electromagnetic engineering and science
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• v.7 no.2
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• pp.64-68
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• 2007

An InGaP/GaAs HBT based differential Colpitts voltage control oscillator(VCO) is presented in this paper. In the VCO core, two switching transistors are introduced to steer the core bias current to save power. An LC tank with an inductor quality factor(Q) of 11.4 is used to generate oscillation frequency. It has a superior phase noise characteristics of -130.12 dBc/Hz and -105.3 at 1 MHz and 100 kHz frequency offsets respectively from the carrier frequency(1.566 GHz) when supplied with a control voltage of 0 volt. It dissipates output power of -5.3 dBm. Two pairs of on-chip base collector (BC) diodes are used in the tank circuit to increase the VCO tuning range(168 MHz). This VCO occupies the area of $1.070{\times}0.90mm^2$ including buffer and pads.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.625-626
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• 2006

An Ultra low power super-regenerative oscillator was implemented with on-chip inductor and quench signal generator. The super-regenerative oscillator detects the signal level as low as -70dBm while consuming only 0.48mA at 1.5V supply voltage. These results indicate that the super-regenerative oscillator can be outstanding candidate the simple, ultra low power receiver design.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.06a
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• pp.96-97
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• 2008

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.2
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• pp.325-331
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• 2010

In this study, highly miniaturized short-wavelength meander line employing eriodically patterned ground structure (PPGS) was developed for application to miniaturized on-chip passive component on GaAs MMIC (monolithic microwave integrated circuit). The meander line employing PPGS showed shorter wavelength and slow-wave characteristic compared with conventional meander line. The wavelength of the meander line employing PPGS structure was 17 % of the conventional meander line on GaAs MMIC. Due to its slow-wave structure, the meander line employing PPGS exhibited large propagation constant than conventional meander line, which resulted in larger phase shift and shunt inductance value. Above results indicate that the meander line employing PPGS is a promising candidate for application to a development of miniaturized on-chip RF components as well as inductor with a high inductance value on GaAs MMIC.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.60-68
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• 2016

This paper presents a 6~18 GHz 7-bit digital-controlled attenuator. The proposed attenuator is based on switched-T architecture, but no inductor is used for minimum chip size. The designed attenuator was fabricated using $0.18{\mu}m$ CMOS process, and characterized using on-wafer testing setup. The resolution(minimum attenuation step) and the maximum attenuation range of the attenuator were measured to be 0.22 dB and 28 dB, respectively. The measured RMS attenuation error and the RMS phase error for 6~18 GHz were less than 0.26 dB and $3.2^{\circ}$, respectively. The reference state insertion loss was less than 12.4 dB at 6~18 GHz. The measured input and output return losses were better than 9.4 dB over all frequencies and attenuation states. The chip size is $0.11mm^2$ excluding pads.