• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• The Korean Journal of Physiology and Pharmacology
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• 제3권5호
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• pp.481-490
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• 1999

To investigate the changes in the responses of vestibular neurons with time during vestibular compensation, the resting activity and dynamic responses of type I and II neurons in the medial vestibular nuclei to sinusoidal angular acceleration were recorded following unilateral labyrinthectomy (ULX) in Sprague-Dawley rats. The unitary extracellular neuronal activity was recorded from the bilateral medial vestibular nuclei with stainless steel microelectrodes of $3{\sim}5\;M{\Omega}$ before ULX, and 6, 24, 48, 72 hours, and 1 week after ULX under pentobarbital sodium anesthesia (30 mg/kg, i.p.). Gain (spikes/s/deg/s) and phase (in degrees) were determined from the neuronal activity induced by sinusoidal head rotation with 0.05, 0.1, 0.2, and 0.4 Hz. The mean resting activity before ULX was $16.7{\pm}8.6$ spikes/s in type I neurons $(n=67,\;M{\pm}SD)$ and $14.5{\pm}8.4$ spikes/s in type II neurons (n=43). The activities of ipsilateral type I and contralateral type II neurons to the lesion side decreased markedly till 24 hr post-op, and a significant difference between ipsilateral and contralateral type I neurons sustained till 24 hr post-op. The gain at 4 different frequencies of sinusoidal rotation was depressed in all neurons till 6 or 24 hr post-op and then increased with time. The rate of decrease in gain was more prominent in ipsilateral type I and contralateral type II neurons immediately after ULX. Although the gain of those neurons increased gradually after 24 hours, it remained below normal levels. The phase was significantly advanced in all neurons following ULX. These results suggest that a depression of activities in ipsilateral type I and contralateral type II neurons is closely related with the occurrence of vestibular symptoms and restoration of activities in those neurons ameliorates the vestibular symptoms.

• 미생물학회지
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• 제37권3호
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• pp.228-233
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• 2001

Salmonella enterica serovar Typhimurium의 대수 생장기 산 적응기전(acid tolerance response; ATR)은 pH 4.5 이하 조건에서 산 적응결과 형성된 것이며, 이것은 세균세포가 강한 산성환경에 노출되었을 때 생존율을 높일 수 있는 기전이다. ATR은 세균의 생장단계에 따라 대수 생장기 ATR과 생장 정지기 ATR로 구분되어질 수 있으며, 각 생장 단계는 산 적응 과정에서 합성되는 고유의 ASP (acid shock protein)가 존재한다. ATR 기전은 낮은 온도 등과 같은 환경조건에 영향을 받는다는 것이 본 실험 결과를 통하여 발견되었다. 낮은 온도 및 약산성 조건에 노출되었을 경우 강한 산성 조건에서 세균의 생존율은 증가하는 양상을 보였으며, 이때의 생존율은 $37^{\circ}C$에서 보여졌던 것보다 높게 나타났다. $25^{\circ}C$에서 산 적응을 하지 않은 경우의 세균은 $37^{\circ}C$와 비교하였을 경우 약 10,000배 정도의 생존율 증가를 보여주었다. 산 내성 반응에 주요한 기능을 담당하는 rpoS 돌연변이주의 산 내성도는 $37^{\circ}C$의 결과와 비교해블 때 저온의 조건에서 산 내성능이 높게 나타났다. 비륵 rpoS 돌연변이주가 저온에서 산 적응 여부에 관계없이 pH 3.1에서 유사한 ATR 양상을 보여주고 있지만, $25^{\circ}C$의 산성 조건에서 rpoS$\Omega$Ap 돌연변이주는 지속적 산 내성도를 나타내지 않음으로써 저온에서도 rpoS 의존성 ATR 기전이 존재하고 있다는 것을 알 수 있었다. 결과적으로 저온 조건에서는 rpoS의존적 및 -비의존적 ATR기전 모두가 존재하는 것으로 여겨진다. 저온 조건과 ATR의 기초연구를 위해서 병원성 5. enterica serovar Typhimurium UK1에서 low temperature acid tolerance (lat) 유전자를 P22-MudJ(Km, lacZ)를 이용한 lacz 오페론 융합법을 사용하여 LF452 latA::MudJ를 분리하였다. LF452 latA::MudJ 돌연변이주는 저온에서 산 적응기전을 보유하지 않았으며, 결과적으로 latA는 $25^{\circ}C$에서 산 적응 내성 기전에 관여하는 중요 유전자로 판단되며, latA의 유전자는 Salmonella Genetic Map상의 21.5 min에 위치하고 있다.

• 전기화학회지
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• 제10권4호
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• pp.288-294
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• 2007

Modified oxalate method에 의해 합성한 중온형 Solid Oxide Fuel Cell 용 LSCF cathoded의 pH 변화에 따른 분말특성 및 여러 종류의 전해질에 따른 전극특성에 대해 연구하였다. LSCF를 합성하기 위한 출발물질로는 La, Sr, Co 및 Fe의 염화물과 oxalic acid, ethanol 및 $NH_4OH$를 사용하여, $80^{\circ}C$ 에서 pH 2, 6, 7, 8, 9 및 10에서 합성하였다. 합성한 LSCF 분말은 pH $2{\sim}9$까지는 단일상의 LSCF 결정상을 생성하였다. 그러나, PH 10에서는 LSCF결정상 외에 이차상인 $La_2O_3$ 결정상이 나타났으며, 또한 $800^{\circ}C$에서 4시간 하소한 경우 50 nm정도의 작은 크기를 나타내었다. 합성한 LSCF cathode 분말의 전기전도도는 pH 7에서 합성한 LSCF 분말의 경우 $600^{\circ}C$부터 $900^{\circ}C$까지 측정하였을 때 약 950 S/cm의 높은 값을 나타내었다. 또한 분극저항의 경우 같은 합성 조건에서 합성한 LSCF 분말이라도 하소조건에 따라 다른 결과를 나타내었는데, $800^{\circ}C$에서 하소한 분말의 경우 $1200^{\circ}C$에서 하소한 분말 보다 낮은 분극저항을 나타내었다. 특히 $800^{\circ}C$에서 4시간 하소하여 합성한 LSCF 분말은 $600^{\circ}C$에서 Scandia Stabilized Zirconia (ScSZ), yttria (8mol.%)-stabilized zirconia(8Y-YSZ) 및 Gadolinium Doped Ceria(GDC) 전해질을 사용하였을 때, 전극면적이 $0.5\;cm^2$일 때 각각 2.52, 1.54 및 $2.58\;{\Omega}$을 나타내었다.

• 한국세라믹학회지
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• 제49권5호
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• pp.475-483
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• 2012

High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.

• 대한환경공학회지
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• 제37권9호
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• pp.499-504
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• 2015

팽창흑연과 탄소나노튜브를 이용한 산화전극을 CTP에 Ni을 혼합한 결합제로 제작하였으며, 산화전극에 CTP와 Ni을 혼합한 결합제와 Nafion 결합제를 대조구로 미생물연료전지의 성능에 미치는 영향을 회분식 실험을 통하여 조사하였다. 산화전극 제작에 사용된 CTP 양이 적을수록, Ni 함량이 증가할수록 산화전극 표면에 부착성장한 미생물량이 증가하였으며, 내부저항이 감소하였다. CTP 4 g과 Ni 0.2 g을 혼합한 결합제로 제작한 산화전극의 경우 최대전력밀도는 $731.8mW/m^2$, 내부저항은 $146.19{\Omega}$이다. 대조구인 Nafion결합제로 제작한 산화전극와 비교하여 최대전력밀도는 23.68% 컸으며, 내부저항은 33.82% 낮았다. 따라서, CTP와 Ni을 혼합한 물질은 저렴하고 효율이 높은 미생물연료전지의 산화전극결합제로서 좋은 대안이 될 수 있다.

• 한국세라믹학회지
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• 제44권12호
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• pp.740-746
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• 2007

The potential candidates for IT-SOFCs cathode materials, $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ (BSCF) and $La_{0.6}Ba_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ (LBCF) powders, were synthesized by a EDTA-citrate combined method from $Sr(NO_3)_2$, $Ba(NO_3)_2$, $La(NO_3)_3{\cdot}6H_2O$, $Co(NO_3)_2{\cdot}6H_2O$, $Fe(NO_3)_3{\cdot}9H_2O$, citric acid and $EDTA-NH_3$. The cathode performance of symmetrical electrochemical cells consisting of BSCF-GDC or LBCF-GDC composite electrodes and a GDC electrolyte was investigated using by AC impedance spectroscopy at the temperature range of 500 to $700^{\circ}C$. It was found that a single phase perovskite could be successfully synthesized when the precursor is heated at $850^{\circ}C$ for 2 h. Due to thermal expansion mismatch between BSCF and GDC, the composite cathodes with lower GDC content than 45 wt% were peeled off from the GDC electrolyte and their electrode polarization resistance was estimated to be high. The thermal expansion coefficient of BSCF-GDC composites was decreased with increasing the GDC content and the electrode peeling off did not occur in BSCF-45 and 55 wt% GDC composites. BSCF-45 wt% GDC composite electrode showed the lowest area specific resistances (ASR) of 0.15 and $0.04{\Omega}{\cdot}cm^2$ at 600 and $700^{\circ}C$, respectively. On the other hand, LBCF-GDC composite cathodes showed higher ASR than the BSCF-45 and 55 wt% GDC and their cathode performance were decreased with the GDC content.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• 한국재료학회지
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• 제23권3호
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• 한국전자파학회논문지
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• 제16권4호
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• pp.380-388
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• 2005

본 논문은 초광대역 통신 방식(Ultra Wide Band, UWB)의 하나인 임펄스 라디오 시스템에서 RF(Radio Frequency)필터의 군지연 차에 의한 펄스 신호의 왜곡과 펄스 신호 왜곡으로 인한 시스템 성능의 열화에 대해 분석하였다. 임펄스 라디오는 시간 영역에서 매우 짧은 지속 시간을 갖는 펄스 신호를 변조하여 송신한 후 수신단에서 송신 펄스와 동일한 펄스를 발생하여 상호 상관(cross correlation)을 구해 신호를 판별하게 된다. 이로 인해 군지연 차이로 인한 펄스 파형의 왜곡은 심각한 시스템 성능 열화를 야기할 수 있다. 특히 RF 필터는 공진을 이용한 특성으로 인해, 필터의 차단 특성이 우수할수록 더 큰 군지연 차이를 야기하며, 본 논문에서는 이러한 RF필터의 군지연 차이가 시간 영역에서 펄스 파형의 왜곡에 미치는 영향 및 시스템 성능 열화에 미치는 영향을 분석하였다. 본 논문은 2 단자 회로의 입출력 단이 이상적으로 매칭되어 있을 경우 소신호 산란계수 $S_{21}$이 필터의 전달 함수 $H(\omega)$ 임을 이용하여 임의의 필터를 설계 후 그 $S_{21}$을 구하고, 역 푸리에 변환을 구하여 입력 펄스 파형과 컨벌루션 적분을 통해 출력 파형을 구하였다. 또한 BPM(Bi-Phase Modulation) 및 PPM(Pulse Position Modulation) 변조 임펄스 라디오 시스템의 BER(Bit Error Rate)을 분석하여 RF 필터의 군지연 차이로 인한 시스템 성능의 열화를 분석하였다.