• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.1
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• pp.111-116
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• 2017

We propose the compact circular polarized antenna. The radiation elements of the proposed antenna is designed using FR4 substrate with the size of $25mm{\times}3.2mm{\times}5mm$ and stand on four corners of the feed network substrate. The feeder network is designed on FR4 substrate with the size of $40mm{\times}40mm{\times}0.8mm$ and has four oupt signals with same magnitude and $90^{\circ}$ phase difference. The input impedances of the designed radiation elements and the output impedances of the feeder network are $100{\Omega}$. The designed antenna has the dimension of $40mm{\times}40mm{\times}5.8mm$ and the operated frequency band of 1.559 - 1.609 GHz. The fabricated antenna has RHCP radiation pattern and the measured results of axial ratio less than 3.5 dB and radiated gain more than 1.5 dBic. The fabricated antenna can apply to GLONASS and Beiodu systems as well as GPS system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.254-259
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• 2003

In the fabrication process of transparent conducting thin films of the ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the $SiO_2$ buffer layer formed on the substrate and $N_2$ annealing treatment were investigated by XPS (X-ray photoelectron spectroscopy) analysis. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin films which were deposited on $SiO_2$ buffer layer/soda lime glass and then annealed under nitrogen atmosphere were 84 % and $5.0\times 10^{-3}\Omega \textrm{cm}$ respectively. The XPS analysis confirmed that a $SiO_2$ buffer layer inhibited Na ion diffusion from the substrate, resulting in prohibiting the formation of a secondary phase such as $Na_2SnO_3$ and SnO and increasing Sb ion concentration and ratio of $Sb^{5+}/Sb^{3+}$ in the film. And it was also found that $N_2$ annealing treatment leads to the reduction of $Sn^{4+}$as well as $Sb^{5+}$ however the reduction of $Sn^{4+}$ is more effective and therefore consequently results in decrease in the electrical resistivity to produce an excellent electrical properties of the film.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.545-554
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• 2003

Design of the optical modulator composed of a three-waveguide coupler and CPW traveling-wave electrodes was carried out. Switching phenomena of three-waveguide couplers were analyzed by using the coupled mode theory, and the coupling-lengths of the devices were calculated by means of the FDM. CPW traveling-wave electrodes were analysed by the CMM and SOR simulation technique in order to find the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electrolyte technique. The fabricated modulator chip was end-polished, pig-tailed and packaged in a brass mount with K-connector. The insertion loss and the switching voltage of the optical modulator were about 4㏈ and 19V, respectively. Network analyzer was used to obtain the S parameter and the corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted to be Z$_{c}$= 45 Ω, N$_{eff}$=2.20, and $\alpha$$_{0}$=0.055/cm√GHZ. The measured optical response R($\omega$) was compared with the theoretically estimated one, showing both responses agree well. The measurement results revealed that 3㏈ bandwidth turned out to be about 13 GHz.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.58-58
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• 1999

The diamond films which can be applied to SOD (silicon-on-diamond) structure were deposited on Si(100) substrate using CO/H2 CH4/H2 source gases by microwave plasma chemical vapor deposition(MPCVD), and SOD structure have been fabricated by poly-silicon film deposited on the diamond/Si(100) structure y low pressure chemical vapor deposition(LPCVD). The phase of the diamond film, surface morpholog, and diamond/Si(100) interface were confirmed by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), and Raman spectroscopy. The dielectric constant, leakage current and resistivity as a function of temperature in films are investigated by C-V and I-V characteristics and four-point probe method. The high quality diamond films without amorphous carbon and non-diamond elements were formed on a Si(100), which could be obtained by CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5%, respectively. The (111) plane of diamond films was preferentially grown on the Si(100) substrate. The grain size of the films deposited by CO/H2 are gradually increased from 26nm to 36 nm as deposition times increased. The well developed cubo-octahedron 100 structure nd triangle shape 111 are mixed together and make smooth and even film surface. The surface roughness of the diamond films deposited by under the condition of CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5% were 1.86nm and 3.7 nm, respectively, and the diamond/Si(100) interface was uniform resistivity of the films deposited by CO/H2 concentration ratio of 15.3% are obtained 5.3, 1$\times$10-9 A/cm, 1 MV/cm2, and 7.2$\times$106 $\Omega$cm, respectively. In the case of the films deposited by CH4/H2 resistivity are 5.8, 1$\times$10-9 A/cm, 1 MV/cm, and 8.5$\times$106 $\Omega$cm, respectively. In this study, it is known that the diamond films deposited by using CO/H2 gas mixture as a carbon source are better thane these of CH4/H2 one.

• Journal of the Mineralogical Society of Korea
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• v.13 no.3
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• pp.164-170
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• 2000

Neutron single crystal and powder diffraction techniques have been applied to the structure analysis of yttria-stabilized zirconium, Z $r_{0.73}$ $Y_{0.27}$ $O_{1.87}$., prepared by the skull-melting method. The crystal structure has been determined to be cubic symmetry, space group Fm/equation omitted/ with a=5.155(2)$\AA$, V=136.99(5)$\AA$, Z=4, and R(F)=5.65%, $\omega$R(I)=10.57% for 70 integrated intensities of Bragg Peaks observed from single crystal of Z $r_{0.73}$ $Y_{0.27}$ $O_{1.87}$. The stabilizer atoms randomly occupy the zirconium sites and there are displacements of oxygen atoms with amplitudes of $\Delta$/a~0.033 and 0.11 along <110> and <100> directions from the ideal positions of the fluorite structure, respectively. There are no significant differences in crystallographic data between the single crystal and powder studies. Diffraction pattern after Rietveld refinement, using neutron powder data, has shown the evidence of a tetragonal impurity phase, or a slight tetragonal distortion.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.723-732
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• 1996

Cu films were deposited by chemical wapor deposition on the as-received substrates (TiN/Si) and three kinds of Cu-seeded substrates (Cu/TiN/Si) which had seeding layer in the thick ness of 5 ${\AA}$ and 130 ${\AA}$ coated by ICB(Ionized Cluster Beam) method. The effect of Cu seeding layers on the growth rate, crystallinity, grain size uniformity and film adhesion strength of final CVD-Cu films was investigated by scanning eletron microscopy(SEM), X-ray diffractometry and scratch test. The growth rate was found to incresase somewhat in the case of ICB-seeding. The XRD patterns of the Cu films on the as-received substrate and ICB Cu-seeded substrates exhibited the diffraction peaks corresponding to FCC phase, but the peak intensity ratio($I_{111}/I_{200}$) of Cu films deposited on the ICB Cu-seeded substrates increased compared with that of Cu films on the as-received substrate. The resistivity of final Cu film on 40 ${\AA}$ seeded substrate was observed as the lowest value, 2.42 $\mu\Omega\cdot$cm compared with other Cu films. In adhesion test, as the seeding thickness increased from zero to 130 ${\AA}$, the adhesion strength increased from 21N to 27N.

• Applied Chemistry for Engineering
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• v.8 no.6
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• pp.1041-1047
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• 1997

The influence of $\omega$-phenylalkylammonium salt on the critical micelle concentration (CMC) of SDS has been examined using the electric conductivity method. CMC of SDS exhibited the tendency to decrease with the length of alkyl group of additives. The effect of temperature on CMC of SDS in additive solutions has been observed in the range of $18^{\circ}C-50^{\circ}C$. The free energy(${\Delta}G_m^{\circ}$) for the micellization of SDS is negative and the entropy(${\Delta}S_m^{\circ}$) is a large positive value. The enthalpy(ΔHm0is positive in low temperature($18^{\circ}C$) and negative in high temperature($>25^{\circ}C$). In the prensence of organic additives, the micellization of SDS was considered as a spontaneous process and to involve a phase transition. The values of ΔGm0has shown the tendency to increase but the values of ${\Delta}S_m^{\circ}$ and ${\Delta}H_m^{\circ}$ to decrease with the length of alklyl group of additive salts. The changes in ${\Delta}\kappa$(difference of specific conductivity) with increasing mole ratio of additives in the mixed solutions indicated the formation of mixed micelles between SDS and additives. The effect of the length of alkyl chain on the micellization of SDS demonstrated the penetration of organic additives into the palisade layer of the SDS micelle.

• Applied Chemistry for Engineering
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• v.18 no.5
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• pp.522-526
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• 2007

Structural features and electrochemical performances of cokes pyrolized from oxidized cokes were examined, and compared with KOH-activated coke. Needle cokes ($d_{002}=3.5{\AA} $), having a graphene layer structure, were changed to a single phase of graphite oxide after oxidation treatment with an acidic solution having an $NaCLO_3$/needle coke composition ratio of above 7.5, and the inter-layer distance of the oxidized coke was expanded to $6.9{\AA} $ with increasing oxygen content. After heating at $200^{\circ}C$, the oxidized coke was pyrolized to the graphene layer structure with inter-layer distance of $3.6{\AA} $. However, the change of the inter-layer distance of the needle coke was not observed in the KOH activation process. On the other hand, an intercalation of electrolyte ions into the pyrolized coke, observed at first charge, occurred at 1.0 V, in which the value was lower than that of KOH-activation coke. The cell capacitor using pyrolized coke exhibited a lower internal resistance of $0.57{\Omega}$ in 1 kHz, and a larger capacitance per weight and volume of 30.3 F/g and 26.9 F/ml at the two-electrode system in the potential range 0~2.5 V than those of the cell capacitor using KOH-activation of coke. This better electrochemical performance may be associated with structure defects in the graphene layer derived from the process of the inter-layer expansion and shrinkage.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1012-1017
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• 1999

Low resistance ohmic contacts to the Si-doped $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$(~$\times10^{19}\textrm{cm}^{-3}$) were obtained using the W metallization schemes. Specific contact resistance decreased with increasing annealing temperature. The lowest resistance is obtained after a nitrogen ambient annealing at $950^{\circ}C$ for 90 s, which results in a specific contact resistance of $2.75\times10^{-8}\Omega\textrm{cm}^{-3}$. Interfacial reactions and surface are analyzed using x-ray diffraction and scanning electron microscopy (SEM). The X-ray diffraction results show that the reactions between the W film and the $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$ produce a $\beta$-$W_2N$ phase at the interface. The SEM result shows that the morphology of the contacts is stable up to a temperature as high as $850^{\circ}C$. Possible mechanisms are proposed to describe the annealing temperature dependence of the specific contact resistance.