• Korean Journal of Materials Research
• /
• v.11 no.1
• /
• pp.39-43
• /
• 2001

Nanocrystalline Fe-Sm-O thin films were prepared by RF magnetron reactive sputtering method in $Ar+O_2$mixed atmosphere with the $O_2$content of 5%. The compositions of the thin films were changed by changing the number of $Sm_2O_3$ chips. The best soft magnetic properties of the thin film with the composition of $Fe_{83.4}Sm_{3.4}O_{13.2}$ were saturation flux density of 18 kG, coercivity of 0.82 Oe and effective permeability about 2,600 at 0.5~100 MHz, respectively. The electrical resistivity of Fe-Sm-O thin films was increased with increasing the amount of Sm and O elements which combined each other, the electrical resistivity of$Fe_{83.4}Sm_{3.4}O_{13.2}$ thin film was $130{\mu}{\Omega}cm$. In case of the small amount of Sm and O elements, the microstructures of Fe-Sm-O thin films showed a precipitated phase of $Sm_2O_3$ on the ${\alpha}-Fe$ phase. With the increase of the amount of Sm and O elements, the microstructures of the Fe- Sm-O thin films were changed into a mixed structure of ${\alpha}-Fe$ crystal-phase and Sm-oxide amorphous phase. The Fe-Sm-O thin films with Fe content in the range of 72~94 at% exhibited the quality factor (Q = $\mu$′/$\mu$") of 7~75 up to 50 MHz.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.6
• /
• pp.263-270
• /
• 2001

The mechanical and electrical properties of the hot-pressed and annealed ${\beta}-SiC-TiB_2$,/TEX> electroconductive ceramic composites were investigated as function as functions of the liquid forming additives of $Al_2O_3+Y_2O_3$. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$,/TEX>, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents in pressureless annealing method because YAG of reaction between $Al_2O_3$ was increased. The flexural strength showed the highest value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives in pressed annealing method at room temperature. Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism, the fracture toughness showed 7.1 MPa ${\cdot}\;m^{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $6.0{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm(25\'^{\circ}C}$ and $3.0{\times}10^{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature, respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from 25 $^{\circ}C$ to 700 $^{\circ}C$.

• Journal of Integrative Natural Science
• /
• v.5 no.4
• /
• pp.237-240
• /
• 2012

In this study, PEDOT thin films polymerized with Iron(III)tosylate ($Fe(PTS)_3$) and grown on atomically smooth and highly dense 3-aminopropyltriethoxysilane self-assembled monolayer (APS-SAM) surfaces by VPP method have been investigated. PEDOT thin films were synthesized on APS self-assembled $SiO_2$ wafer surface at two different concentrations (20 wt% and 40 wt%) and growth time (3 and 30 minutes), and then their sheet resistance were measured and compared. PEDOT thin films grown with 20 wt% $Fe(PTS)_3$ oxidant are highly conductive when compared with the film grown with 40 wt% $Fe(PTS)_3$, as ascertained by the measured sheet resistance values down to 0.06 ${\Omega}/cm$. It clearly suggests that 20 wt% is more effective oxidant concentration for VPP than 40 wt% even though the film grown with 40 wt% oxidant has better quality than the film with 20 wt% $Fe(PTS)_3$ does.

• Proceedings of the KSME Conference
• /
• 2001.06e
• /
• pp.380-385
• /
• 2001

In the present study, flow characteristics of turbulent oscillatory flow in a square-sectional $180^{\circ}$ curved duct are investigated experimentally. In order to measure wall shear stress and pressure distributions, experimental studies for air flow are conducted in a square-sectional $180^{\circ}$ curved duct by using the LDV system with the data acquisition and the processing system. The wall shear stress measuring point bend angle of the $150^{\circ}$ and pressure distribution of the inlet (${\phi}=0^{\circ}$) to the outlet (${\phi}=180^{\circ}$) at $10^{\circ}$ intervals of the duct. The results obtained from the experimentation are summarized as follows: A wall shear stress value in an inner wall is larger than that in an outer wall, except for the phase angle (${\omega}t/{\pi}/6$) of 3, because of the intensity of secondary flow. The pressure distributions are the largest in accelerating and decelerating regions at the bend angle(${\phi}$) of $90^{\circ}$ and pressure difference of inner and outer walls is the largest before and after the ${\phi}=90^{\circ}$.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.2
• /
• pp.60-65
• /
• 2014

This article explains the experimental results of ferroelectric polarization switching (FPS) of potassium nitrate ($KNO_3$) with different polymers such as polyvinylidene fluoride (PVDF) and polyvinyl fluoride (PVF) using simple melt-press techniques. To analyze the ferroelectric polarization switching in potassium nitrate ($KNO_3$) composite films at room temperature, we applied the Ishibashi and Takagi theory (based on Avrami model) to the switching current transient. To investigate the dimensionality of domain growth, the ferroelectric polarization switching current (FPS current) was observed from the square - wave bipolar signals across a resistance of $0.1k{\Omega}$ in series with the composite films. The existence of a switching current transient pulse confirmed the ferroelectricity and indicated the stability of the ferroelectric phase (phase III) of $KNO_3$ at room temperature. Polarization hysteresis (P-E) characteristics supported the prominent features of ferroelectric polarization switching in the composite films at room temperature.

• Journal of Biosystems Engineering
• /
• v.18 no.3
• /
• pp.275-287
• /
• 1993

The flow characteristics of the transitional oscillatory flows are investigated analytically and experimentally in the entrance region of a square duct. The systems of conservation equations are analytically solved by linearizing the non-linear convective terms for the developing transitional oscillatory flows in a square duct. The analytical solutions are obtained in the form of infinite series for the velocity profiles. The experimental study for the air flow in a square duct is carried out to measure the velocity profiles and waveforms by using a hot-wire anemometer with the data acquisition and processing systems. The theoretical and experimental results provide the major characteristics of the developing transitional oscillatory flows, such as velocity profiles, velocity waveforms, and entrance length. The velocity profiles in the decelerating phase are larger than those in the accelerating phase for the developing transitional oscillatory flows. The correlations of the entrance length of the transitional oscillatory flows in a square duct are found to be $Le/Dh=K{\cdot}Re_{os}/2({\omega}^+)^2$, where K is 1.23 of an experimental constant.

• The Korean Journal of Ceramics
• /
• v.2 no.1
• /
• pp.33-38
• /
• 1996

In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

• The Korean Journal of Ceramics
• /
• v.2 no.1
• /
• pp.43-47
• /
• 1996

$RuO_2$ thin films deposited directly on Si substrate by RF magnetron sputtering method using $RuO_2$ target have been investigated. Special interest was focused on the effect of process parameter on the surface roughness of $RuO_2$ films. Crystallization behavior and electrical properties of the films deposited at $300^{\circ}C$ were superior to those deposited at room temperature. Metallic Ru phase was formed in pure Ar and this phase had resulted poor adhesion after post annealing process in oxidizing ambient. Microstructural analysis reveals that the size of the $RuO_2$ crystallites gets smaller and the surface becomes smoother as the $O_2$ partial pressure or film thickness decreases. Irrespective of the $O_2/Ar$ ratio, resistivity of $RuO_2$ films ranged in $50~70 {\mu}{\Omega}-cm$. As the film thickness decreases, there is a thickness where the resistivity rises abruptly. Such an onset thickness turned out to be dependent n the $O_2$/Ar ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.147-147
• /
• 2010

PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as acceptors and sintered $1250^{\circ}C$/2hrs. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $Bi_2O_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength waslowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

• The KSFM Journal of Fluid Machinery
• /
• v.4 no.4 s.13
• /
• pp.37-42
• /
• 2001

In the present study, flow characteristics of turbulent oscillatory flow in an oscillator connected to square-sectional $180^{\circ}$ curved duct are investigated experimentally. In order to investigate wall shear stress and pressure distributions, the experimental studies for air flows we conducted in a square-sectional $180^{\circ}$ curved duct by using the LDV system with the data acquisitions and the processing system. The wall shear stress at bend angle of the $150^{\circ}$ and pressure distribution of the inlet (${\phi}=0^{\circ}$) to the outlet (${\phi}=180^{\circ}$) by $10^{\circ}$ intervals of the duct are measured. The results obtained from the experiment are summarized as follows : wall shear stress values in the inner wall we larger than those in an outer wall, except for the phase angle (${\omega}t/{\pi}/6$) of 3, because of the intensity of secondary flow. The pressure distributions are the largest in accelerating and decelerating regions at the bend angle(${\phi}$) of $90^{\circ}$ and pressure difference of inner and outer walls is the largest before and after the ${\phi}=90^{\circ}$.