• Title/Summary/Keyword: Omega phase

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Preparation of NaxWO3 (x= 1 and 0.75) Thin Films and Their Electrical Conduction Properties (NaxWO3 (x= 1, 0.75) 박막 제조 및 전기전도 특성)

  • Lee, Seung-Hyun;Sun, Ho-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.8
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    • pp.602-610
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    • 2012
  • The powders for the $Na_xWO_3$ (x= 1 and 0.75) sputtering targets were synthesized by the calcination in reductive atmosphere. Near single-phase $NaWO_3$ and single-phase $Na_{0.75}WO_3$ powder targets were prepared. By using the targets, thin films of each composition were deposited by rf magnetron sputtering on the $SiO_2$ (100 nm)/Si substrates and annealed by RTP (rapid thermal processing) for crystallization. In the case of the $NaWO_3$ composition, single-phase $Na_xWO_3$ thin films, where x was believed to be slightly less than 1, were fabricated accompanying the Na-diffusion into the substrates during RTP. However, in the case of the $Na_{0.75}WO_3$ thin film preparation, it was unable to make single-phase thin films. From the phase formation behaviors of both powders and thin films, it was revealed that $Na_xWO_3$ with nonstoichiometric composition of x, which was slightly less than 1, was favorable. The good electrical conduction properties were obtained from the single-phase $Na_xWO_3$ thin films. Their electrical resistivities were as low as $7.5{\times}10^{-4}{\Omega}{\cdot}cm$.

RHEOLOGIC STUDY ON THE VISCOELASTIC PROPERTIES OF FLOWABLE AND CONDENSABLE RESIN COMPOSITES (유동성 및 응축성 복합레진의 점탄성에 관한 유변학적 연구)

  • Lee, In-Bog;Cho, Byeong-Hoon;Son, Ho-Hyun;Kwon, Hyuk-Choon;Um, Chung-Moon
    • Restorative Dentistry and Endodontics
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    • v.25 no.3
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    • pp.359-370
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    • 2000
  • The purpose of this investigation was to observe the viscoelastic properties of five commercial flowable(Aeliteflo, Flow it, Revolution, Tetric flow, Compoglass flow), three conventional hybrid(Z-100, Z-250, P-60) and two condensable(Synergy compact, SureFil) resin composites. A dynamic oscillatory shear test was done to evaluate the storage shear modulus (G'), loss shear modulus(G"), loss tangent(tan ${\delta}$) and complex viscosity(${\eta}^*$) of the resin composites as a function of frequency - dynamic frequency sweep test from 0.01 to 100 rad/s at $25^{\circ}C$ - by using Advanced Rheometric Expansion System(ARES). To investigate the effect on the viscosity of resin composites of filler volume fraction, the filler weight % and volume % were measured by means of Archimedes' principle using a pyknometer. The results were as follows 1. The complex viscosity ${\eta}^*$ of flowable resins was lower than that of hybrid resins and significant differences were observed between brands. The complex viscosity ${\eta}^*$ of condensable resins was higher than that of hybrid resins. The order of complex viscosity ${\eta}^*$ at ${\omega}$=10 rad/s was as follows, Surefil, Synergy compact, P-60, Z-250, Z-100, Aeliteflo, Tetric flow, Compoglass flow, Flow it, Revolution. The relative complex viscosity of flowable resins compared to Z-100 was 0.04~0.56 but Surefil was 30.4 times higher than that of Z-100. 2. The storage shear modulus G' and the loss shear modulus G" of flowable resins were lower than those of hybrid resins but those of condensable resins were higher. The patterns of the change of loss tangent, tan ${\delta}$, of resin composites with increasing frequency were significantly different between brands. The phase angles, ${\delta}$, ranged from $30.2{\sim}78.1^{\circ}$ at ${\omega}$=10 rad/s. 3. All composite resins represent pseudoplastic nature with increasing shear rate. 4. The complex shear modulus $G^*$ and the phase angle ${\delta}$ was represented by the frequency domain phasor form, $G^*({\omega})=G^*e^{i{\delta}}=G^*{\angle}{\delta}$. The locus of frequency domain phasor plots in a complex plane was a valuable method that represent the viscoelastic properties of composite resins. 5. There was no direct linear correlationship but a weak positive relation was observed between filler volume % or weight % and the viscosity of the resin composites.

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Deposition of Nanocrystals using Phase Separation on Flexible Substrates (유연기판위에 상분리를 이용한 반도체 나노입자 증착)

  • Oh, Seung-Kyun;Chung, Kook-Chae;Kim, Young-Kuk;Choi, Chul-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.284-284
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    • 2009
  • We have fabricated semiconductor nanocrystals using phase separation on flexible substrates for future application in QD-LEDs. The phase separation between the CdSe semiconductor nanocrystals and TPD organic underlayer can occur during the solvent drying, and the CdSe may rise towards the surface of the coated films, which is arranged into close packed array called self-assembly process. In this work, the polyethylene naphthalate (PEN) films of $200{\mu}m$ thickness was used as a flexible substrate, which was coated with indium tin oxide(ITO) as a transparent electrode of <$15{\Omega}/cm^2$. A number of solvents such as chloroform, toluene, and hexane was used and their coating properties were investigated using the spin coating process. The dispersion of both QD and TPD was rather poor in toluene and hexane and resulted in rougher surface and some aggregates. Meanwhile, the surface roughness of templates can be a very critical issue in the fabrication of QD-LED devices. Some experiments was performed to reduce the ~4nm surface roughness of the PEN films and It can be decreased to the minimum of ~0.7nm. Also discussed are the optical properties of semiconductor nanocrystals used in this phase separation and possible large area and continuous coating process for future application.

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Design of a 960MHz CMOS PLL Frequency Synthesizer with Quadrature LC VCO (960MHz Quadrature LC VCO를 이용한 CMOS PLL 주파수 합성기 설계)

  • Kim, Shin-Woong;Kim, Young-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.7
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    • pp.61-67
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    • 2009
  • This paper reports an Integer-N phase locked loop (PLL) frequency synthesizer which was implemented in a 250nm standard digital CMOS process for a UHF RFID wireless communication system. The main blocks of PLL have been designed including voltage controlled oscillator, phase frequency detector, and charge pump. The LC VCO has been used for a better noise property and low-power design. The source and drain juntions of PMOS transistors are used as the varactor diodes. The ADF4111 of Analog Device has been used for the external pre-scaler and N-divider to divide VCO frequency and a third order RC filter is designed for the loop filter. The measured results show that the RF output power is -13dBm with 50$\Omega$ load, the phase noise is -91.33dBc/Hz at 100KHz offset frequency, and the maximum lock-in time is less than 600us from 930MHz to 970MHz.

Preparation of PMN-PT-BT/Ag/MgO Nanocomposite and Dielectric Properties (PMN-PT-BT/Ag/MgO 나노복합체의 제조 및 유전 특성)

  • Jeong, Soon-Yong;Lim, Kyoung-Ran;Nahm, Sahn
    • Journal of the Korean Ceramic Society
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    • v.39 no.11
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    • pp.1074-1082
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    • 2002
  • Nanocomposite PMN-PT-BT/Ag/MgO was prepared by sintering at $950{\circ}C$ with addition of $AgNO_3$ and MgO sol to the PMN-PT-BT powder sinterable at $1200{\circ}C$. The low-temperature-sinterable PMN-PT-BT/Ag powder prepared by the modified mixed oxide method was calcined at $600{\circ}C$ for 1h and surface modified with the MgO sol of 0-10 wt% and then subjected to consolidation at $850-950{\circ}C$ for 4h under a flowing oxygen. The nanocomposite PMN-PT-BT/Ag/MgO(0.5wt%) sintered at $950{\circ}C$ showed the microstructure with grains of $1-3{\mu}m$, the second phase of MgO of $0.1-0.3{\mu}m$ by SEM and Ag of << $1{\mu}m$ qualitatively by SIMS. It showed the sintered relative density of 99%, the room temperature dielectric constant of 17200, the dielectric loss of 2.1% and the specific resistivity of $5.46{\times}10^{12}{\Omega}{\cdot}cm$. But the PMN-PT-BT/Ag/MgO(0 wt%) nanocomposite sintered at $950{\circ}C$ showed a little better properties : the sintered relative density of 99.5%, the room temperature dielectric constant of 19500, the dielectric loss of 2.1% and the specific resistivity of $7.30{\times}10^{12}{\Omega}{\cdot}cm$.

Optical and Electrical Properties with Various Post-Heating Temperatures in the Al-Doped ZnO Thin Films by Sol-Gel Process (졸-겔법에 의해 제조된 Al-Doped ZnO 박막의 후열처리 온도에 따른 전기 및 광학적 특성)

  • Ko, Seok-Bae;Choi, Moon-Sun;Ko, Hyungduk;Lee, Chung-Sun;Tai, Weon-Pil;Suh, Su-Jeong;Kim, Young-Sung
    • Journal of the Korean Ceramic Society
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    • v.41 no.10 s.269
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    • pp.742-748
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    • 2004
  • Isopropanol of low boiling point was used as a solvent to prepare Al-doped ZnO(AZO) thin films. A homogeneous and stable sol was made from Zn acetate a solute whose mole concentration was 0.7mol/$\iota$ and Al chloride as a dopant. Al-doped ZnO thin films were prepared by sol-gel method as a function of post-heating temperature from 500 to $700^{\circ}C$ and the optical and electrical properties were investigated. The c-axis orientation along (002) plane was enhanced with the increasing of post-heating temperature and the surface morphology of the films showed a homogeneous and nano-sized microstructure. The optical transmittance of the films post-heated below $650^{\circ}C$ was over $86\%$, but decreased at $700^{\circ}C$. The electrical resistivity of the thin films decreased from 73 to 22 $\Omega$-cm as the post-heating temperature increased up to $650^{\circ}C$, but increased greatly to 580 $\Omega$-cm at $700^{\circ}C$. XPS analysis indicated that the deterioration of electrical and optical properties was attributed to the precipitation of $Al_2O_3$ phase on the surface of AZO thin film. This result suggests that the optimum post-heating temperature to improve electrical and optical properties is $600^{\circ}C$.

Ti:LiNbO3 three-waveguide type traveling-wave optical modulator; outer fed, anti-symmetrical Detuning (Ti:LiNbO3 세 도파로형 진행파 광변조기;바깥입사, 반대칭 Detuning)

  • 이우진;정은주;피중호;김창민
    • Korean Journal of Optics and Photonics
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    • v.15 no.4
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    • pp.375-384
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    • 2004
  • Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

A study on the growth mechanism of rutile single crystal by skull melting method and conditions of RF generator (스컬용융법에 의한 루틸 단결정 성장메커니즘과 RE generator 조건에 관한 연구)

  • Seok jeong-Won;Choi Jong-Koen
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.5
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    • pp.175-181
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    • 2005
  • Ingots of rutile single crystals were grown by the skull melting method, and their characteristics were compared in terms of melt-dwelling time for each melt. The method is based on direct inductive heating of an electrically conducted melt by an alternating RF field, and the heating is performed by absorption of RF energy. $TiO_2$ is an insulator at room temperature but its electric conductivity increases elevated temperature. Therefore, titanium metal ring(outside diameter : 6cm, inside diameter : 4cm, thickness 0.2cm) was embedded into $TiO_2$, powder (anatase phase, CERAC, 3N) for initial RF induction heating. Important factors of the skull melting method are electric resistivity of materials at their melting point, working frequency of RF generator and cold crucible size. In this study, electric resitivity of $TiO_2$, $(10^{-2}\~10^{-1}\;{\Omega}{\cdot}m)$ at its melting point was estimated by compairing the electric resitivities of alumina and zirconia. Inner diameter and height of the cold crucible was 11 and 14cm, respectively, which were determined by considering of the Penetration depth $(0.36\~1.13cm)$ and the frequency of RF generator.

Formation of MOCVD TiN from a New Precursor (새로운 증착원으로 형성된 MOCVD TiN에 관한 연구)

  • Choe, Jeong-Hwan;Lee, Jae-Gap;Kim, Ji-Yong;Lee, Eun-Gu;Hong, Hae-Nam;Sin, Hyeon-Guk
    • Korean Journal of Materials Research
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    • v.9 no.3
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    • pp.244-250
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    • 1999
  • MOCVD TiN films were prepared from a new TiN precursor, tetrakis(etylmethylamino)titanium (TEMAT) and ammonia. Deposition of TiN films from a single precursor, TEMA T yielded the growth rates of $70 to 1050\AA$/min, depending on the deposition temperature. Furthermore, the excellent bottom coverage of -90% over $0.35\mu\textrm{m}$ contacts was obtained at $275^{\circ}C$. The addition of ammonia to TEMA T lowered the resistivity of as- deposited TiN film to ~ $800\mu\omega-cm$ from $3500~6000\mu\omega-cm$ and improved the stability of TiN film in air. Examination of the films by Auger electron spectroscopy(AES) showed that the oxygen and carbon contents decreased with the addition of ammonia. However, increasing ammonia flow rate decreased the bottom coverage of TiN films over $0.5\mu\textrm{m}$ contacts, probably due to the high sticking coefficient of intermediate species produced from the gas phase reaction of TEMA T and ammonia. Based on the byproduct gases detected by the quadrupole mass spectrometer (QMS), the transammination reaction was proposed to be responsible for TiN deposition. In addition, XPS analysis revealed that the carbon in the films made from TEMA T and ammonia was metallic carbon, suggesting that $\beta$-hydrogen activation process occurs competitively with the transammination reaction.

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Thermotropic Liquid Crystalline Behavior of α,ω-Bis(4-nitroazobenzene-4'-carbonyloxy)alkanes (α,ω-비스(4-니트로아조벤젠-4'-카보닐옥시)알칸들의 열방성 액정 거동)

  • Jeong, Seung Yong;Hwang, Dong Jun;Ma, Yung Dae
    • Applied Chemistry for Engineering
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    • v.21 no.2
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    • pp.230-237
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    • 2010
  • A homologous series of linear liquid crystal dimers, ${\alpha},{\omega}$-bis(4-nitroazobenzene-4'-carbonyloxy)alkanes (NATWESn, n = 2~8, 10, the number of methylene units in the spacer) have been synthesized, and the thermal behavior of the series has been investigated. All the dimers formed enantiotropic nematic phases. The nematic-isotropic transition temperatures of the dimers and their entropy variation at the phase transition showed a large odd-even effect as a function of n. This behavior was rationalized in terms of the change in the average shape of the spacer on varing the parity of the spacer. The thermal stability and degree of order in the nematic phase and the magnitude of the odd-even effect of NATWESn were very similar to those of the corresponding ether compounds, while they were significantly different from those of the monomesogenic compounds, 4-{4'-(nitrophenylazo)phenoxy}alkanoyl chlorides and the side-chain liquid-crystalline polymers, the poly[1-{4-(4'-nitrophenylazo) phenoxycarbonylalkanoyloxy}ethylene]s. The results were discussed in terms of the 'irtual trimer model'by Imrie.