• Journal of Electrical Engineering and information Science
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• 제1권1호
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• pp.160-163
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• 1996

New formulas for McClellan transform parameters for the design of 2-D zero-phase FIR fan filters are optimally derived under the integral squared error(ISE) criterion. By imposing the constraint that F(0, 0)=\ulcorner, where F($.$) is the McClellan transform and $\omega$\ulcorner is the cutoff frequency of the 1-D prototype filter, the ISE is directly minimized without modifying it and, as a consequence, closed-form formulas for the McClellan transform parameters are obtained. It is shown that these formulas lead to a very efficient design for 2-D zero-phase FIR fan filters.

• 한국결정성장학회지
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• 제13권5호
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• pp.241-246
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• 2003

ATO(antimony-doped tin oxide) 투명전도막을 sol-gel dip coating 방법에 의해 $SiO_2$/glass 기판 위에 성공적으로 제조하였다 ATO막의 결정상은 $SnO_2$상임을 확인하였고, 막의 두께는 withdrawal speed를 50 mm/minute로 코팅시 약 100 nm/layer였다. $SiO_2$/glass 기판 위에 코팅한 400 nm두께의 ATO 박막을 질소분위기에서 annealing한 후, 측정한 광 투과율과 전기 저항치는 각각 84%와 $5.0\times 10^{-3}\Omega \textrm{cm}$였다. 이러한 특성은 $SiO_2$막이 Na 이온의 확산을 제어하여 $Na_2SnO_3$ 및 SnO와 같은 불순물의 형성을 억제하고, 막 내부의 Sb의 농도와 $Sb^{3+}$에 대한 $Sb^{5+}$의 비를 증가시키는데 기여했기 때문으로 확인되었다. 또한, $N_2$ annealing은 $Sb^{5+}$뿐만 아니라 $Sn^{4+}$를 환원시킴으로써 전기전도도를 향상시킴을 확인하였다.

• 한국재료학회지
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• 제10권9호
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• pp.624-628
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• 2000

표면 탄성과 디바이스의 전극재료로 사용되는 Al-%Cu(4000$\AA$)/tungsten nitride 박막을 magnetron sputtering 법으로 제조하고 전기저항을 평가한 비정질상의 tungsten nitride 박막을 제조할 수 있었고, 비정질 형성을 위해 질소비(R =$N_2$/(Ar+$N_2$)가 10~40% 정도 필요하다. Tungsten nitride 박막의 잔류응력은 비정질이 형성되면서 급격히 감소되었다. 이러한 비정질 박막위에 Al-1%Cu 합금막이 형성되었다. 다층막은 453K에서 4시간 동안 열처리함으로써 $3.6{\mu}{\Omega}-cm$의 저항을 나타냈는데, 이는 박막내 결정립 성장과 결함의 감소에 기인하였다.

• 전기학회논문지
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• 제60권6호
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• pp.1152-1162
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• 2011

In this paper, a single-phase DC-AC inverter using two embedded Z-source converters is proposed. The proposed inverter is composed of two embedded Z-source converters with common DC source and output AC load. The output AC voltage of the inverter is obtained by the difference of output capacitor voltages of each converter. The output voltage of each converter take shape of the asymmetrical AC waveform centering zero voltage. Therefore, the proposed inverter can generate the same output voltage despite low VA rating L-C elements, compared to the conventional inverter using high DC voltage with AC ripple. To verify the validity of the proposed system, the PSIM simulation was achieved under the condition of rapid increase of DC source (110[V]${\rightarrow}$150[V]) and R-load (50[${\Omega}$]${\rightarrow}$300[${\Omega}$]). For controlling the voltage of the inverter system, the one-cycle controller was adopted. As results, the proposed inverter output the constant AC voltage (220[V]rms/60[Hz]) for all conditions. Also, the R-L load and nonlinear diode load were adopted for the proposed inverter loads, and we could know that the its output voltage characteristics were as good as the pure R-load. Finally, the RMS and THD of output AC voltage were examined for the different loads, input DC voltages and reference voltage signals.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권9호
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• pp.427-433
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• 2001

A linear ultrasonic motor was designed by a combination of the first longitudinal and fourth bending mode, and the motor consisted of a straight aluminum alloys bar bonded with a piezoelectric ceramic element as a driving element. That is,$L_1-B_4$ linear ultrasonic motor can be constructed by a multi-mode vibrator of longitudinal and bending modes. Linear ultrasonic motors are based on an elliptical motion on the surface elastic body, such as bar or plates. In general, the natural resonance frequency of the stator is used as a driving frequency of the motor which provides a large elliptical motion. The corresponding eigenmode of one resonance frequency can be excited twice at the same time with a Phase shift of 90 degrees in space and time. And the rotation can be reversed by changing the phase between the two signals from sin$\omega$t to cos$\omega$t. Moreover, the tangential force pushes the slider(rotor) and, therefore, determines the thrust and speed of the motor. The experimental results of fabrication motors, bimorph-tyPe motor showed more excellent than unimorph-type. The maximum speed of TBL-200, TBL-300, TBL-400, TBL -220, TBL-310 and TBL-420 motors were 0.12, 0.37, 0.39, 0.14, 0.55 and $0.60ms6{-1}$, respectively. And the efficiency were reported 1.15, 7.9, 6.6, 2.36, 10.1 and 16.5%, respectively. That time, output thrust of the motor was a strong(1~2N) and the weight of stator was a lightness(5~7g).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.857-860
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• 2004

Cubic CdS thin film with the strongest XRD peak (111) at diffraction angle $(\theta)$ of 26.5 was well made at substrate temperature of $150^{\circ}C$. At that time, lattice constant a of the thin film was $5.79{\AA}$, grain size of that was more over ${\mu}m$ and it's resistivity was over $10^3{\Omega}cm$. And the peak of diffraction intensityat miller index (111) of CdS:In thin film with dopant In of 1 atom% was shown higher about 20 % than undoped CdS thin film. Also, CdS:In thin film had in part hexagonal structure among cubic structure as secondary phase. Lattice constant of a and grain size of secondary phase of the film with dopant In of 1 atom% was $5.81{\AA}$ and around $1{\mu}m$ respectively The lowest resistivity of $5.1{\times}10^{-3}{\Omega}cm$ was appeared on dopant In of 1.5 atom%. Optical band gap of undoped CdS thin film was 2.43 eV and CdS:In thin film with dopant In of 0.5 atom% had the largest band gap 2.49 eV.

• 대한전자공학회논문지SD
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• 제39권7호
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• pp.26-36
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• 2002

z-cut $LiNbO_3$ 기판위에 3-section, 5-section 위상반전 전극을 가진 Mach-Zehnder형 진행파 광변조기를 설계 및 제작하였다. FDM(Finite Difference Method : 유한 차분법)을 이용하여 광도파로를 설계하였으며, MW(Microwave)전극 taper영역의 입${\cdot}$출력단에서는 CMM(Conformal Mapping Method: 등각사상법)을, 변조영역에서는 SOR(Successive Over Relaxation: 반복 이완법)을 이용하여 설계를 수행하였다. 제작된 소자의 S 파라미터를 측정하였다. 측정된 S파라미터를 이용하여 이론적으로 주파수응답 R(${\omega}$)을 구하였다. 3-section 전극의 경우 중심 주파수 25GHz에 ${\sim}$15GHz의 대역폭, 5-section의 경우 중심 주파수 45GHz에 ${\sim}$22GHz의 대역폭을 갖는 bandpass 동작을 나타낼 것으로 예측되었다.

• 한국재료학회지
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• 제8권6호
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• pp.526-531
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• 1998

HVPE(hydride vapor phase epitaxy)법으로 (111) $MgAl_2O_4$기판 위에 $10~240\mu{m}$두께의 GaN를 성장하고, GaN의 두께에 따 광학적 성질을 조사하였다. $MgAl_2O_4$기판 위에 성장된 GaN의 PL 특성은 결정성장온도에서 기판으로부터 Mg이 out-diffusion하여 auto-doping 됨으로써 불순물이 첨가된 GaN의 PL 특성을 나타내었다. 10K의 온도데서 측정된 PL 스펙트럼은 자유여기자와 속박여기자의 재결합천이에 의한 피크들과 불순물과 관련된 도너-억셉터 쌍 사이의 재결합 및 이의 포논 복제에 의한 발광으로 구성되었으며, 깊은 준위로부터의 발광은 나타나지 않았다. 중성 도너에 속박된 여기자 발광 에너지와 라만 $E_2$모드 주파수는 GaN의 두께가 증가함에 따라 지수 함수적으로 감소하였으며, GaN 내의 잔류 응력에 대하여 라만 E2 모드 주파수는$\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa)의 관계로 변화하였다.

• 센서학회지
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• 제25권1호
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• pp.1-7
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• 2016

Bioelectrical impedance (BI) at popliteal regions was measured using a bioelectrical impedance measurement system (BIMS), which employs the multi-frequency and the two-electrode method. Experiments were performed as follows. First, a constant AC current of $800{\mu}A$ was applied to the popliteal regions (left and right) and the BI was measured at eight different frequencies from 10 to 500 kHz. When the applied frequency greater than 50 kHz was applied to human's popliteal regions, the BI was decreased significantly. Logarithmic plot of impedance vs. frequency indicated two different mechanisms in the impedance phenomena before and after 50 kHz. Second, the relationship between resistance and reactance was obtained with respect to the applied frequency using BI (resistance and reactance) acquired from the popliteal regions. The phase angle (PA) was found to be strongly dependent on frequency. At 50 kHz, the PA at the right popliteal region was $7.8^{\circ}$ slightly larger than $7.6^{\circ}$ at the left popliteal region. Third, BI values of extracellular fluid (ECF) and intracellular fluid (ICF) were calculated using BIMS. At 10 kHz, the BI values of ECF at the left and right popliteal regions were $1664.14{\Omega}$ and $1614.08{\Omega}$, respectively. The BI values of ECF and ICF decreased sharply in the frequency range of 10 to 50 kHz, and gradually decreased up to 500 kHz. Logarithmic plot of BI vs. frequency shows that the BI of ICF decreased noticeably at high frequency above 300 kHz because of a large decrease in the capacitance of the cell membrane.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.51-54
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• 2006

Cathode material, $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$, for low temperature SOFC was prepared by the glycine-nitrate synthesis process (GNP). The characteristics of the synthesized powders were studied with controlling pH of a precursor. The synthesis BSCF powders with pH were agglomeration state and calcinations temperature has not influence on particles. Highly acidicprecursor solution increased a single phase forming the temperature. Also, synthesis BSCF powder was show result for thermal analysis and alteration of difference crystal with pH. It is considered that Ba and Sr cannot complex by carboxylic acid group of glycine, because under highly acidic condition the caboxylic group mainly combined with $H^+$ insead of alkali and alkaline earth cations. In case of using precursor solution with pH $2{\sim}3$, a single perovskite phase was obtained at $1000^{\circ}C$. Polarization resistance of $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ was measured by AC impedance spectroscopy from the two electrode symmetric cell. Area specific resistance of the $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ air electrode at $500^{\circ}C\;and\;600^{\circ}C$ were $0.96{\Omega}?cm^2$ and $0.16{\Omega}?cm^2$, respectively.