• Journal of Power Electronics
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• v.18 no.2
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• pp.375-382
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• 2018

A novel active controlled primary current cutting-off zero-voltage and zero-current switching (ZVZCS) PWM three-level dc-dc converter (TLC) is proposed in this paper. The proposed converter has some attractive advantages. The OFF voltage on the primary switches is only Vin/2 due to the series connected structure. The leading-leg switches can obtain zero-voltage switching (ZVS), and the lagging-leg switches can achieve zero-current switching (ZCS) in a wide load range. Two MOSFETs, referred to as cutting-off MOSFETs, with an ultra-low on-state resistance are used as active controlled primary current cutting-off components, and the added conduction loss can be neglected. The added MOSFETs are switched ON and OFF with ZCS that is irrelevant to the load current. Thus, the auxiliary switching loss can be significantly minimized. In addition, these MOSFETs are not series connected in the circuit loop of the dc input bus bar and the primary switches, which results in a low parasitic inductance. The operation principle and some relevant analyses are provided, and a 6-kW laboratory prototype is built to verify the proposed converter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.213-216
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• 2003

Recently a new high power device GCT (Gate Commutated Turn-off) thyristor has been successfully introduced to high power converting application areas. GCT thyristor has a quite different turn-off mechanism to the GTO thyristor. All main current during turn-off operation is commutated to the gate. Therefore, IGCT thyristor has many superior characteristics compared with GTO thyristor; especially, snubberless tum-off capacibility and higher turn-on capacibility. The basic structure of the GeT thyristor is same as that of the GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. The turn-off characteristic of the GCT thyristor is influenced by the minority carrier lifetime and the performance of the gate drive unit. In this paper, we present turn-off characteristics of the 2.5kV PT(Punch-Through) type GCT as a function of the minority carrier lifetime and variation of the doping profile shape of p-base region.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1965-1967
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• 1999

We have investigated the electrical characteristics of the poly-Si TFT's with the novel gate insulator structure. The gate insulator makes the offset region to reduce leakage current, and the electrical characteristics are obtained by employing Virtual Wafer Fab. simulator. As increases the gate insulator thickness above the offset region of this structure from $0{\AA}$ to $2000{\AA}$, the OFF state current at $V_G$=10V decrease by two orders in magnitude while ON state current doesn't decrease significantly. ON/OFF current ratios for conventional device and the proposed device with $2000{\AA}$ gate insulator thickness are $1.68{\times}10^5$ and $1.07{\times}10^7$, respectively.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.14 no.12
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• pp.1039-1046
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• 2002

To investigate the characteristics of orifice as an expansion devices, the experimental apparatus was made and experiments are being peformed using R22 and R290. The main idea of this control method of refrigerant flow rate with coupled orifices is to control the ON/OFF state of T and Ball type orifice corresponding to the subdivided region of thermal load. When system requires minimum thermal load, both T and Ball type orifices are closed, but refrigerant can flow through small hole of T type orifice. In regular thermal load, when ball type orifice is closed, T type orifice is opened and mass flow rate increase more than OFF state of T type orifice, due to large diameter. In maximum thermal load, both T and Ball type orifices are open and the much refrigerant can flow. The flow characteristics on T type orifice and parallel-combined orifice are obtained in the subdivided region of thermal load.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.43-50
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• 2011

Carbon-nanotube metal oxide semiconductor field effect transistor (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16 nm N-type CN-MOSFETs are explored in this paper. The optimum N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio ($I_{on}/I_{off}$). The influence of substrate voltage on device performance is also investigated in this paper. Tradeoffs between subthreshold leakage current and overall switch quality are evaluated with different substrate bias voltages. Technology development guidelines for achieving high-speed, low-leakage, area efficient, and manufacturable carbon nanotube integrated circuits are provided.

• Journal of Mechanical Science and Technology
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• v.14 no.6
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• pp.645-654
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• 2000

In this paper, low level control algorithms of a metal belt CVT are suggested. A feedforward PID control algorithm is adopted for line pressure based on a steady state relationship between the input duty and the line pressure. Experimental results show that feedforward PID control of the line pressure guarantees a fast response while reducing the pressure undershoot which may result in belt slip. For ratio control, a fuzzy logic is suggested by considering the CVT shift dynamics and on-off characteristics of the ratio control valve. It is found from experimental results that a desired speed ratio can be achieved at steady state in spite of the fluctuating primary pressure. It is expected that the low level control algorithms for the line pressure and speed ratio suggested in this study can be implemented in a prototype CVT.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.295-297
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• 2004

A double-role double through switch with defected ground structure (DGS) is Proposed. The equivalent circuit for the proposed switch structure is derived based on equivalent circuit of newly proposed DGS unit structure. The equivalent circuit parameters of DGS unit are extracted by using the circuit analysis method The on/off operation of the proposed switch Is obtained by varying the capacitance in the ground metallic plane The experimental results show excellent insertion loss characteristic at on state and isolation characteristic at off state.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.08a
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• pp.368-377
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• 2004

A mathematical model was developed for the prediction of the average temperature and RDT(RM Delivery temperature) in a roughing mill. The model consisted of three parts as follows (1) The intermediate numerical model calculated the deformation and heat transfer phenomena in the rolling: region by steady state FEM and the heat transfer phenomena in the interpass region by unsteady state FEM (2) The Off-line prediction model was derived from non-linear regression analysis based on the results of intermediate numerical model considering the various rolling conditions, (3) Using the heat flux in rolling region, temperature profile along thickness direction was calculated. For validation of the presented model, the rolling force per pass and RDT measued in on-line process was compared with those of model and the results showed close agreement with the existing data. In order to demonstrate the effectiveness of the proposed model, the various rolling conditions was tested.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.1
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• pp.45-49
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• 1983

The four-layered(metal/insulator/n epi-layer/p+) controlled inversion devices have been fabricated. The I-V curve showed two characteristic states―an On state and an OFF state which were separated by a negative resistance region. The switching voltage and the holding voltage were about 5.0V and 2.5V, respectively. The switching voltage of the device was decreased by photo illumination while the holding voltage remained unaffected.

• Proceedings of the KIEE Conference
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• 2007.04a
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• pp.107-109
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• 2007

The recently-developed off-line learning control approaches for the rejection of periodic disturbances utilize the specific property that the learning system tends to oscillate in steady state. Unfortunately, the prior works have not clarified how closely the learning system should approach the steady state to achieve the rejection of periodic disturbances to satisfactory level. In this paper, we address this issue extensively for the class of linear systems. We also attempt to remove the effect of other aperiodic disturbances on the rejection of the periodic disturbances effectively. In fact, the proposed learning control algorithm can provide very fast convergence performance in the presence of aperiodic disturbance. The effectiveness and practicality of our work is demonstrated through mathematical, performance analysis as well as various simulation results.