• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.11a
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• pp.341-346
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• 2000

The effect of OTS(octadecyltrichlorosilane) SAM(self-assembled monolayer) on the micro-adhesion has been studied. OTS SAM was formed on the Si(100) surface and SPM (scanning probe microscope) tips with different radius of curvature were fabricated by a series of masking and etching processes. Pull-off forces of different tips on Si and OTS SAM surfaces were measured by SPM in different relative humidities. The surface of OTS SAM was changed to hydrophobic surface and the micro-adhesion force of OTS SAM was lower than that of pure Si. As the tip radius of curvature and the relative humidity increased. the micro-adhesion force increased. Based on the test results. the main parameter affected to the micro-adhesion was absorbed humidity on the surface.

• Tribology and Lubricants
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• v.17 no.4
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• pp.276-282
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• 2001

Nano adhesion between SPM (scanning probe microscope) tips and 075 (octadecyltrichlorosilane) SAM (self-assembled monolayer) was experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes in various conditions of relative humidity. OTS SAM was formed on Si-wafer (100) surfaces, and Si$_3$N$_4$ tips of different radius of curvature were used. When the surface was hydrophobic, the adhesion and friction forces were found lower than those of bare Si-wafer. Results also showed that micro-adhesion force increased as the relative humidity and the tip radius of curvature increased. The main parameter for affecting the micro-adhesion was found absorbed humidity on the contact surface. These results were discussed with the JKR model and a capillary force caused by absorbed water.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1636-1638
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• 2007

We report on low-voltage pentacene TFTs with a Al2O3/OTS as a gate dielectric. Improving device characteristics, we performed chemical modification of self-grown Al2O3 surface with an octadecyltrichlorosilane(OTS) self-assembled monolayer(SAM). As the result of this combination, the mobility was improved from 0.3 to $0.45\;cm^2/Vs$. In addition, we examined that the SAM dipole electric field have an influence on gate leakage current, transfer and output characteristics.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.394-399
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• 2008

Growth and electronic structure of pentacene film on silicon oxide before and after octadecyltrichlorosilane (OTS) treatment have been studied by photoelectron spectroscopy and photoelectron emission microscopy. On the OTS-treated surface, due to the weak interaction between the substrate and pentacene, the diffusion of pentacene is enhanced and domain size gradually grows, leading to a gradual change of the HOMO offset position. On the bare silicon oxide, the change of the HOMO position is marginal because of relatively strong interaction between the substrate and pentacene from the beginning.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.21-25
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• 2006

To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.645-647
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• 2009

We investigated vertical liquid crystal (LC) alignment effects of a self-assembled-monolayer (SAM) prepared on an anisotropic $SiO_2$ surface where the field-induced LC reorientation produced a uniform single domain texture. We compared the results with the homeotropic-to-random planar reorientation results shown in LCs aligned on a SAM surface prepared on an isotropic $SiO_2$ surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.193.2-193.2
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• 2015

최근 3차원 반도체의 물질적인 한계를 극복하기 위해 2차원 전이금속 칼코게나이드(TMD)에 대한 연구가 활발히 진행되고 있다. 하지만 TMD 물질의 도핑 방법에 대한 수많은 연구에도 불구하고 대부분이 n채널 물질인 MoS2에 대한 것에 국한되어 있다. 게다가 이전의 TMD 도핑 기술 연구 결과는 채널이 도체화 될 정도의 매우 높은 농도의 도핑 현상만을 보여주었다. 이 연구에서 우리는 WSe2로 만든 p형 채널 트랜지스터에서 Octaecyltrichlorosilane(OTS)층의 농도 조절로 제어가 가능한 약한 농도의 p형 도핑기술을 보여준다. 이 p형 도핑 현상은 OTS의 메틸기(-CH3)그룹에 의한 양성 쌍극자모멘트가 WSe2내의 전자 농도를 낮추는데서 기인한다. 제어가 가능한 p형 도핑은 $2.1{\times}10^{11}cm^{-2}$ 사이에서 $5.2{\times}10^{11}cm^{-2}$로 degenerate되지 않은 정도로 WSe2 기반의 광, 전기적인 소자에서 적절한 농도로 최적화 될 수 있다. (도핑 정도에 따른 문턱전압 상승, 전류 on/off율 상승, 전계효과 이동도 상승, 광응답성 하락, 광검출성 하락) 또한 OTS에서 비롯한 p도핑 효과는 대기중에서 오랜시간이 지나도 작은 성능 변화만을 보여주며(60시간 후 18~34% 문턱전압 감소변화량) $120^{\circ}C$의 열처리를 통하여 저하된 성능이 거의 완벽하게 회복된다. 이 연구는 Raman 분광법과 전기적, 광학적 측정을 통하여 분석되었으며 OTS 도핑현상이 WSe2 박막의 두께와 무관함 또한 확인했다.

• Polymer(Korea)
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• v.27 no.6
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• pp.555-561
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• 2003

The self-assembled monolayer coating of octadecyltrichlorosilane (OTS) on the silicon based MEMS was investigated and surface characteristics were considered as a function of coating conditions and reagent composition. The sulfuric peroxide mixture (SPM) solution was used to form -OH group which caused the hydrophilic characteristic on silicon surftce. Highest hydrophilicity was obtained by SPM solution with 85% acid content at room temperature. OTS was applied on the silicon surface by means of self-assembled monolayers (SAMs) coating. It was found that sol-gel reaction was took place between -OH group on the silicon surface and -Cl group in OTS. As a result, the contact angle increased due to the increase of hydrophobicity by Si-O bonding of SAMs. Sol-gel reaction could be controlled by coating conditions as well as reagent composition in OTS coating solution.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.85-85
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• 2005

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.163-169
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• 2024

As the limitations of Moore's Law become evident, there has been growing interest in advanced packaging technologies. Among various 3D packaging techniques, Cu-SiO₂ hybrid bonding has gained attention in heterogeneous devices. However, certain issues, such as its high-temperature processing conditions and copper oxidation, can affect electrical properties and mechanical reliability. Therefore, we studied depositing only a heterometal on top of the Cu in Cu-SiO₂ composite substrates to prevent copper surface oxidation and to lower bonding process temperature. The heterometal needs to be deposited as an ultra-thin layer of less than 10 nm, for copper diffusion. We established the process conditions for depositing a Co film using a Co(EtCp)₂ precursor and utilizing plasma-enhanced atomic layer deposition (PEALD), which allows for precise atomic level thickness control. In addition, we attempted to use a growth inhibitor by growing a self-assembled monolayer (SAM) material, octadecyltrichlorosilane (ODTS), on a SiO₂ substrate to selectively suppress the growth of Co film. We compared the growth behavior of the Co film under various PEALD process conditions and examined their selectivity based on the ODTS growth time.