• Title/Summary/Keyword: OLED panel

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Development of Roll Printing Process System for The Next Generation Flexible Solar Cell (차세대 플렉서블 태양전지 생산용 롤프린팅 공정장비 기술 개발)

  • Kim, Dong-Soo;Kim, Jung-Su;Kim, Myoung-Sub;Kim, Kang-Dae
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.57-60
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    • 2009
  • The conductive coating method was used for a various industrial fields. For example, Sputtering process is using to a coat of ITO layer in LCD or OLED panel manufacture process and fabricate a base layer of substrate of an electric printing device. However, conventional coating process (beam sputtering, spin coating etc.) has a problems in the industrial manufacturing process. These processes have a very high cost and critical manufacturing environment as a vacuum process. Recently, many researchers were proposed a various printing process instead of conventional coating process. In this paper, we propose an ESD printing process in ITO coating layer and apply to fabricate a conductive coating film. Ours transparent electrode had a surface resistance of about $66{\Omega}/{\square}$ and transparent of 74% in the wavelength of 500nm. This transparent electrode manufacturing process will be applied to Roll-to-Roll process. In addition, we developed roll printing process system for the next generation flexible solar cell.

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AMOLED Panel Voltage Setting Algorithm (AMOLED 패널 전압 설정 알고리즘)

  • Lee, Byungkwon;Hong, Dueui;Lee, Jongwon;Na, Cheolhun;Jung, Hoekyung
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2018.05a
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    • pp.453-454
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    • 2018
  • AMOLED panels are being used instead of LCD panels. In addition, various process technologies for quality improvement are being studied. These studies require algorithms to perform aging correction and to extract aging correction values. In this paper, we propose a voltage setting algorithm for the aging correction of AMOLED. The voltage setting algorithm calculates and corrects the output voltage by calculating the correction value of the voltage setting. As a result, the required voltage can be supplied according to each channel in the embedded board.

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Light Emitting Characteristics of Multi-layer OLEO Fabricated with DCM (DCM 계열을 이용한 OLED의 전기적인 발광 특성에 관한 연구)

  • Chun, Min-Ho;Yun, Suk-Won;Lim, Sung-Tack;Shin, Dong-Myung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.57-60
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    • 2002
  • In generally, the guest-emitter doped system has been reported to give a bright electroluminescence(EL). The purpose of using doped system is to improve for increasing lifetime and efficiency, and tuning multicolor light. This indicates an enhanced electron-hole recombination rate in emitting layer. The purpose of this study is to obtain the high performance EL devices for flat panel display with red emission. We fabricated EL devices using the guest-host system. where DCM derivatives were taken as a dopant. The devices are fabricated in multilayer system with various concentration of the dopant (red light emitting dye). We measured the I-V characteristics and EL spectra from these devices. and we compared with photoluminescence(PL) quantum yield among the DCM derivatives. The emission mechanism of devices is participated in energy transfer. The energy transfer from these hosts to DCM generates luminescence spectra that vary from yellow red to red, depending on DCM derivatives. Absorption and emission spectra of organic materials composing the devices depend on the emission materials doped with the DCM derivatives. We demonstrated that the high EL efficiency can be achieved by doping host material with DCM derivatives and molecular steric structures

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Characterization of Al2O3 Thin Film Encasulation by Plasma Assisted Spatial ALD Process for Organic Light Emitting Diodes

  • Yong, Sang Heon;Cho, Sung Min;Chung, Ho Kyoon;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.234.2-234.2
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    • 2014
  • Organic light emitting diode (OLED) is considered as the next generation flat panel displays due to its advantages of low power consumption, fast response time, broad viewing angle and flexibility. For the flexible application, it is essential to develop thin film encapsulation (TFE) to protect oxidation of organic materials from oxidative species such as oxygen and water vapor [1]. In many TFE research, the inorganic film by atomic layer deposition (ALD) process demonstrated a good barrier property. However, extremely low throughput of ALD process is considered as a major weakness for industrial application. Recently, there has been developed a high throughput ALD, called 'spatial ALD' [2]. In spatial ALD, the precursors and reactant gases are supplied continuously in same chamber, but they are separated physically using a purge gas streams to prevent mixing of the precursors and reactant gases. In this study, the $Al_2O_3$ thin film was deposited by spatial ALD process. We characterized various process variables in the spatial ALD such as temperature, scanning speed, and chemical compositions. Water vapor transmission rate (WVTR) was determined by calcium resistance test and less than $10-^3g/m^2{\cdot}day$ was achieved. The samples were analyzed by x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FE-SEM).

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Characterization of the High Luminance Top Emission Organic Light-emitting Devices (TEOLEDs) Using Dual Cathode Layer (이중 음극층을 이용한 고휘도 전면발광(Top emission) 유기EL소자의 특성평가)

  • Kang, Yoon-Ho;Lee, Su-Hwan;Shin, Dong-Won;Kim, Sung-Jun;Kim, Dal-Ho;Lee, Gon-Sub;Park, Jea-Gun
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.3 s.16
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    • pp.23-27
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    • 2006
  • Recently, Top emission organic light-emitting diode (TEOLED) has been attracted by their potential application for the development of flat panel display (FPD). We have fabricated the high luminance top emission organic-emitting diode (TEOLED) using dual cathode layer and three top emitting structure. These devices were characterized by electroluminescence (EL) and current density-voltage (J-V) measurements. After compared it with Au anode structure, luminance of the device using dual anode was better than using without Al device. Consequently, Al layers are very good candidates for a promising electron-injecting buffer layer for top emission light-emitting diode (TEOLED).

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Design of Pixel Circuit for AMOLED Using Pentacene TFTs (펜타센 TFT를 이용한 AMOLED 픽셀회로 설계)

  • Ryu Gi-Seong;Choe Ki-Beom;Lee Myung-Won;Song Chung-Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.6 s.348
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    • pp.1-8
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    • 2006
  • In this paper, we designed a pixel circuit for AMOLED display based on organic thin film transistors and analyzed the operation with SPICE simulation. First, we theoretically designed the pixel circuit with the result of layout for fabricating $32\times32$ AMOLED panel, TFT W/L and capacitance of storage capacitor. And we simulated the designed pixel circuit using HSPICE for analyzing electrical performance. As a result of simulation, we identified the possibility of AMOLED display based on OTFTs.

Fabrication of IGZO Transparent Conducting thin Films by The Use of Combinational Magnetron Sputtering (콤비네이숀 마그네트론 스퍼터링법에 의한 IGZO 투명전도막의 제조)

  • Jung, Jae-Hye;Lee, Se-Jong;Cho, Nam-In;Lee, Jai-Youl
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.425-425
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    • 2008
  • The transparent conducting oxides(TCOs) are widely used as electrodes for most flat panel display devices(FPDs), electrodes in solar cells and organic light emitting diodes(OLED). Among them, indium oxide materials are mostly used due to its high electrical conductivity and a high transmittance in the visible spectrum. The present study reports on a study of the electrical and optical properties of IGZO thin films prepared on glass and PET substrates by the combinational magnetron sputtering. We use the targets of IZO and Ga2O3 for the deposition process. In some case the deposition process is coupled with the End-Hall ion-beam treatment onto the substrates before the sputtering. In addition we control the deposition rate to optimize the film quality and to minimize the surface roughness. Then we investigate the effects of the Ar gas pressure and RF power during the sputtering process upon the electrical, optical and morphological properties of thin films. The properties of prepared IGZO thin films have been analyzed by using the XRD, AFM, a-step, 4-point probe, and UV spectrophotometer.

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5.0 inch WVGA Top Emission AMOLED Display for PDA

  • Lee, Kwan-Hee;Ryu, Seoung-Yoon;Park, Sang-Il;Ryu, Do-Hyung;Kim, Hun;Song, Seung-Yong;Chung, Bo-Yong;Park, Yong-Sung;Kang, Tae-Wook;Kim, Sang-Chul;Cho, Yu-Sung;Park, Jin-Woo;Kwon, Jang-Hyuk;Chung, Ho-Kyoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.7-10
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    • 2003
  • Samsung SDI has developed a full color 5.0" WVGA AMOLED display with top emission and a super fine pitch of 0.1365mm(l86ppi), the world's highest resolution OLED display ever reported to date. Scan driver circuits and demux circuit were integrated into the display panel, using low temperature poly-Si TFT CMOS technology, and data driver circuit were mounted using COG chips. Peak luminescence was greater than 300cd/ $m^2$ with power consumption of 500mW with 30% of the pixels on illuminated.

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Red Emission Properties of Organic EL Having Hole Blocking Layer (정공블록킹층을 설치한 유기 EL의 적색발광특성)

  • Kim, Hyeong-Gweon;Lee, Eun-Hak
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.6
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    • pp.17-23
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    • 2000
  • In this study, we prepared red organic light-emitting-diode(OLED) with a fluorescent dye(Sq)-doped and inserted between emission and cathode layer 1,3-bis(5-p-t-butylphenyl)-1,3,4-oxadiazol-2-yl)benzene (OXD7) or/and tris(8-hydroxyquinoline) aluminum ($Alq_3$) layers for increasing electroluminescent(EL) efficiency. This inserting effect has been observed and EL mechanism characteristics have been examined. The hole transfer layer is a N,N'-diphenyl-N,N'-bis-(3-methyl phenyl)-1,1'-diphenyl-4,4'-diamine (TPD), and the host and guest materials of emission layer is $Alq_3$ and bis[1-methyl-3,3'-dimethyl-2-indorindiylmethyl] squaraine (Sq), respectively. For the inserting of $Alq_3$, emission efficiency increased. But we can not obtained highly pure red emission owing to the emission of inserting $Alq_3$ layer. The inserting of OXD7 makes hole block and accumulate. Because of increasing recombination probability of electron and hole, highly pure red color can be held. Simultaneously brightness characteristics and emission efficiency could improve.

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Effect of the oxygen flow ratio on the structural and electrical properties of indium zinc tin oxide (IZTO) films prepared by pulsed DC magnetron sputtering

  • Son, Dong-Jin;Nam, Eun-Kyoung;Jung, Dong-Geun;Ko, Yoon-Duk;Choi, Byung-Hyun;Kim, Young-Sung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.168-168
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    • 2010
  • Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

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