• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1789-1791
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• 2007

We fabricated OTFT-OLED display panel by using Ag-paste for source and drains electrode of OTFTs. The OTFTs were fabricated by solution processes such as spin-coating for PVP gate dielectric and screen printing for S/D electrodes with Ag-paste, except pentacene active layer which was deposited by evaporation. The mobility was 0.024 cm2/V.sec , off state current ${\sim}10-11A$, threshold voltage 7.6 V and on/off current ratio ${\sim}105$. The panel consisted of 16 x 16 pixels and each pixel consisted of 2 OTFTs, 1 Capacitor and 1 OLED. The pixels successfully worked in terms of current magnitude supplied to OLED and the control ability of driving and switching OTFTs.

• 전자공학회논문지 IE
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• v.48 no.4
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• pp.25-29
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• 2011

Organic electroluminesencent device have been studied because of its easy fabrication and high brightness for plate panel display instead of CRT and LED. There are some device structure for full color filter system can be applicable to the full color application if the blue light organic electroluminesencent device(OELD) is developed. In this study, We have investigated electro-luminescent (EL) characteristics of organic EL device using Alq3, PBD as emitting material. Current and luminance can be seen that express a similar relativity in voltage and could know that luminance is expressing current relativity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.264-266
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• 2005

Manufacture of OLED device used thermal evaporation method. However thermal evaporation method has many defect as thermal damage of substrate, difficult of dopant rate control and low utilization of organic materials. so we suggest PLD(Pulsed Laser Deposition) method that solution of these problems. PLD method has many advantage as without thermal damage, easy indicate of deposition rate per one pulse and good utilization of organic materials. In this paper we apply the PLD method for manufacture of device so we present high efficiency device manufacture using PLD method that has good deposition uniformity, surface rough and deposition rate.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1374-1377
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• 2005

Top-emitting organic light-emitting diode (TEOLED) was fabricated on flexible substrate of PES film. Aluminum and Chromium multilayer was used as an anode of TEOLED and the TEOLEDs of Cr(20nm)/Al(100nm)/Cr(20nm)/NPB(60nm)/Alq(60nm)/LiF(1nm)/Al(2nm)/Ag(20nm)/NPB(200nm) has been fabricated on PES film and Si wafer for control device. The TEOLED on PES film which had good anode surface morphology, showed very similar device characteristics to that on Si wafer.

• ETRI Journal
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• v.43 no.6
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• pp.1093-1102
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• 2021

Microdisplays based on organic light-emitting diodes (OLEDs) have a small form factor, and this can be a great advantage when applied to augmented reality and virtual reality devices. In addition, a high-resolution microdisplay of 3000 ppi or more can be achieved when applying a white OLED structure and a color filter. However, low luminance is the weakness of an OLED-based microdisplay as compared with other microdisplay technologies. By applying a tandem structure consisting of two separate emission layers, the efficiency of the OLED device is increased, and higher luminance can be achieved. The efficiency and white spectrum of the OLED device are affected by the position of the emitting layer in the tandem structure and calculated via optical simulation. Each white OLED device with optimized efficiency is fabricated according to the position of the emitting layer, and red, green, and blue spectrum and efficiency are confirmed after passing through color filters. The optimized white OLED device with color filters reaches 97.8% of the National Television Standards Committee standard.

• Journal of the Korean institute of surface engineering
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• v.40 no.2
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• pp.77-81
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• 2007

To investigate the characteristics of green light-emitting OLED device, C545T material with $Alq_3$ was doped in the OLED device of $ITO(1500)/2-TNATA(400{\AA})/NPB(80{\AA})/Alq_3:C545T(160{\AA})/Alq_3(240{\AA})/LiF(3{\AA})/Al(2400{\AA})$ structure, which was used as a activator at the respective concentration of 0.5 vol.%, 1 vol.%, 2 vol.% and 3 vol.%. It was observed from the experiments that the device efficiency firstly increased with the increase of C545T concentration and the maximum efficiency of 10.9 cd/A and 4.28 lm/W was obtained at C545T concentration of 1 vol.%, and then the device efficiency decreased as the C545T activator concentration increased above 2 vol.% contents, while the longest lifetime of over 750 hours was obtained at C545T concentration of 1 vol.%.

• Journal of the Korean institute of surface engineering
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• v.45 no.1
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• pp.20-24
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• 2012

Multilayer passivation film on OLED with organic/inorganic hybrid structure as to diminish the thermal stress and expansion was researched to protect device from the direct damage of $O_2$ and $H_2O$ and improve life time characteristics. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The films consist of ITO(150 nm)/ELM200_HIL(50 nm)/ELM002_HTL(30 nm)/$Alq_3$: 1 vol.% Rubrene(30 nm)/$Alq_3$(30 nm) and LiF(0.7 nm)/Al(100 nm) which were formed in that order. Using LiF/$SiN_x$ as a buffer layer was determined because it significantly improved life time characteristics without suffering damage in the process of forming passivation film. Multilayer passivation film on buffer layer didn't produce much change in current efficiency, while the half life time at 1,000 $cd/m^2$ of OLED/LiF/$SiN_x$/E1/$SiN_x$ was 710 hours which showed about 1.5 times longer than OLED/LiF/$SiN_x$/E1 with 498 hours. futhermore, OLED/LiF/$SiN_x$/E1/$SiN_x$/E1/$SiN_x$ with 1301 hours showed about twice than OLED/LiF/$SiN_x$/E1/$SiN_x$ which demonstrated that superior characteristics of life time was obtained in multilayer passivation film. Through the above result, it was suggested using LiF/$SiN_x$ as a buffer layer could reduce the damage from the difference of thermal expansion coefficient in OLED with protective films, and epoxy layer in multilayer passivation film could function like a buffer between $SiN_x$ inorganic layers with relatively large thermal stress.

• Journal of the Korean institute of surface engineering
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• v.43 no.6
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• pp.272-277
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• 2010

We investigated the life time characteristics of OLED device with aluminium oxide ($AlO_x$) passivation film on glass substrate and polyethylene terephthalate (PET) substrate by RF magnetron sputtering for the transparent barrier film applied to flexible OLED device. Basic buffer layer was determined as $Alq_3$(500 nm)-LiF(300 nm)-Al(1200 nm), and the most suitable aluminium oxide ($AlO_x$) film have been formed when the partial volume ratio of oxygen was 20% and the sputtering power was 100 watt and the minimum thickness of buffer was $2\;{\mu}m$. $AlO_x$/epoxy hybrid film was also used as a effective passivation layer for the purpose of improving life time characteristics of OLED devices with the glass substrate and the plastic substrate. Besides, the simultaneous deposition of $AlO_x$/epoxy film on back side of PET could result in better improvement of life time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.936-940
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• 2005

IMML(Inorganic metal multi-layer) was used as cathode in the OLED devices to reduce the reflectance or ITO and increase the contrast ratio. Device structure was $ITO/{\alpha}-NPD/Alq_3:DCJTB/Alq_3/IMML/Al$. $Alq_3$ and DCJTB (4 - (dicyanomethylene) - 2 - ( 1 - propyls) 6 - methy 4H - pyrans) as host material lot red emission and red emitting guest material. IMML made three different layer: thin aluminum layer, aluminum layer doped with silicon monoxide, thick aluminum layer. The red OLED device with IMML showed the average reflectance of $4.97\%$, and then normal OLED with or without polarizer showed the average reflectance of $4.55\%$, $46\%$ at visible range from 380 nm to 780 nm. The brightness of OLED with IMML at 13 V was 5557 $cd/m^2$, and that of normal OLED with polarizer was 4872 $cd/m^2$. IMML could be the substitution for polarizer with same reflection, low cost, easy process in flat panel display market.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.83-88
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• 2004

BAlq was fabricated as for hole blocking layer in the OLED devices to investigate its electrical and optical characteristics. Device structure was ITO/$\alpha$ -NPD/EML/BAlq/Alq3/Al:Li using TYG-201, DPVBi (4, 4 - Bis (2, 2 - diphenylethen-1 - yls) - Biphenyl), Alq and DCJTB (4-(dicyanomethylene)-2- (1-propyls)6-methy 4H-pyrans) as green emitting material, blue emitting material, host material for red emission and red emitting guest material respectively. The OLED device showed optimum working voltage and electron density at 600 cd/$m^2$ when thickness of BAlq is 25$\AA$ for RGB OLED devices while their efficiencies are better at 50$\AA$ of BAlq. Red and blue color OLEDs also fabricated using 30$\AA$ thickness of BAlq and compared with those without BAlq layer. BAlq was more effective in electrical properties such as working voltage, current density and efficiency of red OLED than blue and green ones. This study describes that 30$\AA$ is optimum thickness of BAlq for best performance of full color OLED devices when using BAlq as a hole blocking material.