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C545T가 첨가된 OLED 소자의 발광특성

The Luminescent Characteristics of C545T Doped OLED Devices

  • 주성후 (대진대학교 공과대학 신소재공학과) ;
  • 양재웅 (대진대학교 공과대학 신소재공학과)
  • Ju, Sung-Hoo (Department of Advanced Materials Science and Engineering, Daejin University) ;
  • Yang, Jae-Woong (Department of Advanced Materials Science and Engineering, Daejin University)
  • 발행 : 2007.04.30

초록

To investigate the characteristics of green light-emitting OLED device, C545T material with $Alq_3$ was doped in the OLED device of $ITO(1500)/2-TNATA(400{\AA})/NPB(80{\AA})/Alq_3:C545T(160{\AA})/Alq_3(240{\AA})/LiF(3{\AA})/Al(2400{\AA})$ structure, which was used as a activator at the respective concentration of 0.5 vol.%, 1 vol.%, 2 vol.% and 3 vol.%. It was observed from the experiments that the device efficiency firstly increased with the increase of C545T concentration and the maximum efficiency of 10.9 cd/A and 4.28 lm/W was obtained at C545T concentration of 1 vol.%, and then the device efficiency decreased as the C545T activator concentration increased above 2 vol.% contents, while the longest lifetime of over 750 hours was obtained at C545T concentration of 1 vol.%.

키워드

참고문헌

  1. C. W. Tang, S. A. VanSlyke, C. H. Chen, J. Appl. Phys., 65 (1989) 3610 https://doi.org/10.1063/1.343409
  2. J. Kido, M. Kimura, K. Nagai, Science, 267 (1995) 1332 https://doi.org/10.1126/science.267.5202.1332
  3. J.-H. Lee, S.-H. Ju, S.-W Kim, W-G. Lee, W-Y. Kim, J.-S. Choi, Y.-K. Kim, C.-H. Lee, J. of the Korean Physical Society, 35 (1999) S1124-S1127
  4. N.-R. Kim, Y.-D. Lee, J-K. Kim, S.-W Hwang, B.-K. Ju, J. of Information Display, 7(3) (2006) 13-18
  5. H. Kanno, Y. Hamada, H. Takahashi, IEEE J. of Selected Topics in Quantum Electronics, 10(1) (2004) 30-36 https://doi.org/10.1109/JSTQE.2004.824076
  6. Y. Kijima, N. Asai, S. Tamura, Jpn. J. Appl. Phys., 38(1, 9A) (1999) 5274-5277 https://doi.org/10.1143/JJAP.38.5274
  7. T.-H. Liu, C.-Y. Iou, S.-W Wen, C. H. Chen, Thin Solid Films, 441(1) (2003) 223-227 https://doi.org/10.1016/S0040-6090(03)00861-7
  8. Fawen Guo, Dongge Ma, Lixiang Wang, Xiabin Jing, Fosong Wang, Semicond. Sci. Technol., 20(3) (2005) 310-313 https://doi.org/10.1088/0268-1242/20/3/010
  9. Y.-K. Park, J.-I. Han, M.-G. Kwak, J-K. Han, and S.-H. Ju, J. of the Korean Institute of Electrical and Electronics Material Engineer, 10(3) (1997) 262-267