• Title/Summary/Keyword: O:N ratio

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Characteristics of Oxygen-Enhanced Flame in Swirl Burner (선회연소기를 이용한 산소부화연소화염의 연소 특성 연구)

  • Lee, Yun-Won;Ahn, Kook-Young;Kim, Han-Seok;Lee, Chang-Eon
    • Proceedings of the KSME Conference
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    • 2001.11b
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    • pp.149-154
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    • 2001
  • The emission characteristics, flame stability, the composition of the flame zone and temperature profile were studied experimentally. The compositions of oxydant were varied by substituting $N_2$ with $CO_2$ at the constant $O_2$ concentration. Results showed that flame became unstable due to the high heat capacity, low transport rate and strong radiation effect of $CO_2$ in comparison with those of $N_2$. The reaction zone was cooled, broadened, as the conversion ratio of $CO_2$ to $N_2$ was increased. Temperature has a large effect on the NOx emission. The concentration of NOx in flue gas decreased due to the decreased temperature of reaction zone. It was also shown that the reaction was delayed by the cooling effect. As the conversion ratio of $CO_2$ to $N_2$ was increased, the emission of CO and the higher temperature zone increased due to the decrease of reaction rate by the cooling effect.

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Dielectric and Pyroelectric Properties of Lead-Free Sodium Bismuth Titanate Thin Films Due to Excess Sodium and Bismuth Addition

  • Kang, Dong Heon;Kang, Yong Hee
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.4
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    • pp.25-30
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    • 2013
  • Pb-free ferroelectric $(Na_{0.5}Bi_{0.5})TiO_3$ (NBT) thin films were prepared by a modified sol-gel process. Their structural, dielectric and pyroelectric properties were investigated as a function of the excess Na/Bi ratio and the annealing temperature. In the case of thin films containing no excess Na and Bi, only partial amounts of the perovskite NBT were crystallized, where the films consisted mainly of the pyrochlore phase of $Bi_2Ti_2O_7$ for annealing conditions of $600{\sim}800^{\circ}C$. With increasing excess Na/Bi ratio, the proportion of the perovskite phase effectively increased due to the compensation of the volatile Na and Bi components. For a Na/Bi ratio of 2.0, the thin film with single NBT perovskite phase was obtained within XRD detection limit after annealing at $700^{\circ}C$ for 10 min and it showed the excellent dielectric properties, ${\varepsilon}r$ of ~550 and tan ${\delta}$ of 0.03. While these properties were degraded for Na/Bi ratio of 2.5 despite the existence of pure perovskite phase. The NBT thin film with Na/Bi ratio of 2.0 are also promising candidates for applications requiring pyroelectric devices because it was found to have pyroelectric coefficients of $1.3{\sim}7nC/cm^2K$ in the temperature range of $30{\sim}100^{\circ}C$.

A Electrical Characteristics of Disk-type Piezotransformer with Electrode Ratio of Driving and Generating Part (디스크형 압전변압기의 전극비에 따른 전기적 특성)

  • 이종필;채홍인;정수현;홍진웅
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.10
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    • pp.458-463
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    • 2003
  • In order to develope piezoelectric transformer for the ballast of fluorescent lamp, a new shape and electrode pattern of piezoelectric transformer has been investigated in this work. The composition of piezoelectric ceramics was 0.95Pb(Zr$_{0.51}$Ti$_{0.49}$)O$_3$+0.03Pb(Mn$_{1}$3/Nb$_{2}$3/)O$_3$+0.02Pb(Sb$_{1}$2/Nb$_{1}$2/)O$_3$. The sample prepared by this composition system showed the characteristics which has about 1200 of relative dielecric constant, 1100 of the mechanical quality factor, 0.53 of the electromechanical coupling coefficient, 320 pC/N of the piezoelectric constant d$_{33}$, 0.3 % of the dissipation factor. Diameter and thickness of disk-type piezoelectric transformer was 45 mm and 4 mm, respectively. The driving and generating electrode with their gap of 1mm were fabricated on the top surface. But the common electrode was fabricated on the whole bottom surface. The electrode surface ratio of driving and generating part on the top surface ranges from 1.4:1 to 3:1. We investigated the electrical characteristics with the variation of the electrode surface ratio of driving and generating part in the range of load resistance of 100 $\Omega$~70 k$\Omega$. The set-up voltage ratio of this piezoelectric transformer increases with increasing both the electrode surface of driving part and the load resistance. The set-up voltage ratio at no load resistance was more than 60 times. On the other hand, the efficiency decreases with increasing the electrode surface of driving part. In the case of the electrode surface of both 1.4:1 and 2:1, maximum efficiency showed above 97 % at load resistance of 2 k$\Omega$. However, in the case of the electrode surface of 3:1, maximum efficiency showed about 94 % at load resistance of 3 k$\Omega$.>.>.>.

Selective Synthesis of Acetonitrile via Direct Amination of Ethanol Over Ni/SiO2-Al2O3 Mixed Oxide Catalysts (Ni/SiO2-Al2O3 복합 산화물 촉매 상에서 에탄올의 직접 아민화 반응에 의한 선택적 아세토니트릴 합성)

  • Kim, Hanna;Shin, Chae-Ho
    • Korean Chemical Engineering Research
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    • v.59 no.2
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    • pp.281-295
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    • 2021
  • In this study, the direct amination of ethanol was performed over impregnated Ni on SiO2-Al2O3 mixed oxide catalysts prepared by varying Si/(Si + Al) molar ratio to 30 mol%. To characterize the physico-chemical properties of the catalysts used, X-ray diffraction (XRD), N2-physisorption, temperature-programmed desorption of iso-propyl alcohol (IPA-TPD), temperature-programmed desorption of ethanol (EtOH-TPD), temperature-programmed reduction with H2 (H2-TPR), H2-chemisorption and transmission electron microscopy (TEM) were used. The acidic property was continuously increased until Si/(Si + Al) = 30 mol% in SiO2-Al2O3 mixed oxides used. The dispersion of Ni metal and surface area, acid characteristics of the supported Ni catalyst have a complex effect on the catalytic reaction activity. The low reduction temperature of nickel oxide and acidic properties were beneficial to the formation of acetonitrile. In terms of conversion of ethanol, Ni/SiO2-Al2O3 catalyst with a molar ratio of 10 mol% Si/(Si+Al) showed the highest activity and a volcanic curve based on it. The tendency of results were consistent in the metal dispersion and catalytic activity.

Electrical characteristics of polysilicon thin film transistors with PNP gate (PNP 게이트를 가지는 폴리 실리콘 박막 트랜지스터의 전기적 특성)

  • 민병혁;박철민;한민구
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.3
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    • pp.96-106
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    • 1996
  • One of the major problems for poly-Si TFTs is the large off state leakage current. LDD (lightly doped drain) and offset gated structures have been employed in order to reduce the leakage current. However, these structures also redcue the oN current significantly due to the extra series resistance caussed by the LDD or offset region. It is desirable to have a device which would have the properties of the offset gated structure in the OFF state, while behaving like a fully gated device in the oN state. Therefore, we propose a new thin film transistor with pnp junction gate which reduce the leakage curretn during the OFF state without sacrificing the ON current during the ON state.

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Possibility of Anoxic Phosphorus Removal by Denitrifier in Denitrifying EBPR System (생물학적 질소.인 동시제거 시스템에서 탈질미생물의 인 제거 가능성)

  • Lee, Hansaem;Yun, Zuwhan
    • Journal of Korean Society on Water Environment
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    • v.29 no.6
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    • pp.782-789
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    • 2013
  • Enhanced biological phosphorus removal (EBPR) behavior and microbial characteristics in the anaerobic-aerobic SBR (PAO SBR) and the anaerobic-anoxic SBR (DPAO SBR) were examined in this research. For 392 days of operation, both SBRs have exhibited a good EBPR (or denitrifying EBPR) performance. $P_{release}/P_{influent}$ ratio was highest in both reactors after the stabilization, while the efficiency of phosphorus removal was decreased since the sludge granulation has been visually observed within the reactor. The comparative analysis of Pyrosequencing-based microbial population between PAO and DPAO sludges showed indirectly that Dechloromonas spp. could utilize $O_2$ and $NO_3{^-}-N$ as an electron acceptor and Accumulibacter phosphatis use only $O_2$ in EBPR system. Also, we concluded that Thauera spp. as a denitrifier contribute significantly to the anoxic phosphorus removal in the DPAO system.

A study on Applicable to Advanced treatment of using Side Stream Plug-Flow Reactor (효과적 공간활용을 위한 Side Stream Plug-Flow Reactor를 이용한 하수 고도처리 공정 적용에 관한 연구)

  • Kim, samju;Hyun, InHwan;Dockko, Suk
    • Journal of Korean Society of Water and Wastewater
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    • v.22 no.3
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    • pp.367-372
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    • 2008
  • This study configured the conventional $A^2O$ (Anaerobic-Anoxic-Aerobic bioreactor) system which the fixed media immersed into the anoxic reactor(Named PFR system : Plug Flow Reactor) for evaluating the removal efficiency of nitrogen in the wastewater. The experimental equipment was a cylinder which was consist of 4 pleated PE Pipes(Length 330M, Diameter 100mm) including 2 rope shape media. As a result, the average effluent T-N removal efficiency of the conventional $A^2O$ system was 17.9, 40.3, 50.6, 44.6% in each mode, but the average effluent T-N removal efficiency of the PFR system could achieve 38.8, 57.1, 71.8, 65.4% in each mode. It indicated that the PFR system caused to the increasing of C/N ratio that effected to the increasing of the denitrification efficiency. Not only the effective T-N removal efficiency but also the controllable install space will give advantages for retrofitting of the wastewater treatment plant with the conventional treatment system to the PFR system.

Duplex Surface Treatments of Plasma Nitrocarburizing and Plasma Oxidation of SKD 11 Steel

  • Lee, In-Sup;Jeong, Kwang-Ho;Cho, Young-Rae
    • Journal of the Korean institute of surface engineering
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    • v.40 no.6
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    • pp.250-253
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    • 2007
  • Plasma nitrocarburizing and plasma oxidizing treatments were performed to improve the wear and corrosion resistance of SKD 11 steel. Plasma nitrocarburizing was conducted for 12 h at $520^{\circ}C$ in the nitrogen, hydrogen and methane atmosphere to produce the $\varepsilon-Fe_{2-3}(N,C)$ phase. It was found that the compound layer produced by plasma nitrocarburising was predominantly composed of $\varepsilon-phase$, with a small proportion of $\gamma'-Fe_4(N,C)$ phase. The thickness of the compound layer was about $5{\mu}m$ and the diffusion layer was about $150{\mu}m$ in thickness, respectively. Plasma post oxidation was performed on the nitrocarburized samples with various oxygen/hydrogen ratio at constant temperature of $500^{\circ}C$ for 1 hour. The very thin magnetite($Fe_3O_4$) layer $1-2{\mu}m$ in thickness on top of the compound layer was obtained by plasma post oxidation. It was confirmed that the corrosion characteristics of the nitrocarburized compound layer could be further improved by the application of the superficial magnetite layer.

The Effect of Additives on the Magnetic Properties of Sr-Ferrite (Sr 페라이트의 자기특성에 미치는 첨가물의 영향)

  • 임재근;오응철;서강수;정병두;신용진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1991.10a
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    • pp.37-39
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    • 1991
  • This paper is studies the effects of additives on the magnetic properties of Sr-ferrite. The specimens have been composed of SrO and Fe$_2$O$_3$with ratio of 1:5.9. As 1st additives, it is mixed to 0.2wt%, 0.7wt% and 1wt% of CaCo$_3$with 0.3wt% SiO$_2$. As 2nd addition, it is mixed to 0.5wt%, 1wt% of Na$_2$SiO$_3$, 0.5wt%, 1wt% of Cr$_2$O$_3$and 0.5wt%, 1wt% of Al$_2$O$_3$and sintering conditions was carried out at 1210$^{\circ}C$, 1230$^{\circ}C$ and 1250$^{\circ}C$. From experiments on the magnetic properties of specimen, the results were shown follows; (1) In case of additive SiO$_2$and CaO, it is stable magnetoplumbite structure for liquid phase grown, enhances mignetic propertics. (2) In case of basic compositions + 0.5wt% Al$_2$O$_3$, it is confirmed better properties by increasing of the coercivity than 0.5wt% Cr$_2$O$_3$additives. (3) In case of mixed additives of Cr$_2$O$_3$and Al$_2$O$_3$, magnetic propeties decrease with sintering density.

Local structure of transparent flexible amorphous M-In-ZnO semiconductor

  • Son, L.S.;Kim, K.R.;Yang, D.S.;Lee, J.C.;Sung, N.;Lee, J.;Kang, H.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.164-164
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    • 2010
  • The impurity doped ZnO has been extensively studied because of its optoelectric properties. GIZO (Ga-In-Zn-O) amorphous oxide semiconductors has been widely used as transparent flexible semiconductor material. Recently, various amorphous transparent semiconductors such as IZO (In-Zn-O), GIZO, and HIZO (Hf-In-Zn-O) were developed. In this work, we examined the local structures of IZO, GIZO, and HIZO. The local coordination structure was investigated by the extended X-ray absorption fine structure. The IZO, GIZO and HIZO thin films ware deposited on the glass substrate with thickness of 400nm by the radio frequency sputtering method. The targets were prepared by the mixture of $In_2O_3$, ZnO and $HfO_2$ powders. The percent ratio of In:Zn in IZO, Ga:In:Zn in GIZO and Hf:In:Zn in HIZO was 45:55, 33:33:33 and 10:35:55, respectively. In this work, we found that IZO, GIZO and HIZO are all amorphous and have a similar local structure. Also, we obtained the bond distances of $d_{Ga-O}=1.85\;{\AA}$, $d_{Zn-O}=1.98\;{\AA}$, $d_{Hf-O}=2.08\;{\AA}$, $d_{In-O}=2.13\;{\AA}$.

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