• Journal of Korean Society for Atmospheric Environment
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• v.22 no.4
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• pp.431-439
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• 2006

Catalytic oxidation of benzene, toluene and xylene (BTX) using regenerated metal oxide catalysts (ZnO-CuO, NiO, $Fe_2O_3$, ZnO, CrO) were investigated in a fixed bed flow reactor to evaluate their feasibility for the purpose of removing volatile organic compounds (VOCs). Four kinds of pre-treatment methods such as gas (air and hydrogen), acid aqueous solution, alkali aqueous solution and cleaning agent were used to find out the optimal regeneration conditions. The physico-chemical properties of the used and regenerated catalysts were characterized by BET and TPR (Temperature Programmed Reduction). The used catalysts showed high conversion ratio and the catalytic ability of toluene oxidation was in the order of ZnO-CuO>$Fe_2O_3$>NiO>ZnO>CrO. We found that the acid aqueous pre-treatment (0.1 N HNO$_3$) was the best way to enhance the catalytic activity of $Fe_2O_3$. In addition, air and hydrogen gas treatment were optimal for NiO and ZnO-CuO catalysts, respectively. Furthermore, the decomposition of BTX depends on the type of a catalyst and a gas molecule.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.1
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• pp.103-111
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• 2000

Ozonation and advanced oxidation($H_2O_2/O_3$) process were investigated under various experimental conditions to improve the efficiency of biological filter used for the treatment of recycled wastewater from aquaculture. Ammonia removal followed the first-order reaction whose reaction rate constant(k) was $2.0{\times}10^{-2}min^{-1}$ in ozonation. The ammonia removal rate increased according as the bicarbonate alkalinity is increased. About 46% $NH_3$ was oxidized by ozone at 200 mg/L as $CaCO_3$. When alkalinity existed in wastewater, ammonia removal rate by advanced oxidation was very low due to the inhibition effect of bicarbonate. However, when initial pH was adjusted to about 8.2 by 0.1 N KOH, ammonia removal rate was improved higher than that by ozonation. Especially. ammonia removal rate was the highest at $H_2O_2/O_3$ of 0.25 and about 90% of ammonia was removed in 30 min at this ratio as pH was maintained over 9. In the case of wastewater containing ammonia and organic constituents, ammonia removal efficiency by both ozonation and advanced oxidation decreased seriously because organic constituents consumed the oxidant faster than ammonia. In addition the optimal $H_2O_2/O_3$ ratio was changed. Like ammonia removal, DOC(dissolved organic carbon) increased for first 10 min and then decreased slowly because the particulate organic constituents were oxidized rapidly and then produce DOC. Even when the ammonia concentration by twice, oxidation of DOC was not retarded.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.424-427
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• 2002

In this papaer, there is a basic research for the development of the Hybrid digital radiation detector with a new system, make up for existing digital radiation detector of direct/indirect method with a weak point. for enhance the efficiency characteristics of signal response from X-ray detector using the a-Se, We make sample with various kinds of layer, through the ratio of As(0.l%,0.3%,0.5%,1%,1.5%,5%,10%). We measure net charge with a leakage current and photo current for electric charateristics. Ratio of As in a-Se consist of 7 stage, It made of using the thermal deposition system, In the made of samples, we made multi layer using the EFIRON optical adhesives from phosphor layer consist of Oxybromide$(BrO_2)$. As a result of X-ray measurement, the best result is ; leakage current(0.30nA/cm2), net charge(610.13pC/cm2/mR) when the condition is voltage(9V/um), 0.3% ratio of As in multi layer(BrO2 + a-Se)

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.576-581
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• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Korean Journal of Soil Science and Fertilizer
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• v.8 no.4
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• pp.199-217
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• 1975

For the establishment of efficient method of potassium topdressing on rice the optimum time and amount were investigated and discussed on the basis of available data from nutriophysiological studies, soil characteristics and fertilizer trials in fields. The followings were pointed out. 1. According to yield rice plants require more potassium around heading under water culture. 2. Potassium involves in harvest index, filled grain ratio, grain weight and number of spikelets per panicle. 3. Potassium is lost after heading in most fields in spite of highest requirement during this period. 4. The higher $K_2O/N$ ratio in straw at harvest is, the higher the yield. 5. Relatively low efficiency of potassium fertilizer under the field condition may be due to improper application method rather than natural supply from soil and irrigation water. 6. Appropriate topdressing time appears at in effective tillering stage for the prevention of nitrogen excess and at 15 to 20 days after transplanting, ear formation stage and 5 days after heading for the prevention of soil reduction damage. Two times of topdressing for clayey soil and three times for sandy soil seems reasonable in practice together with nitrogen topdressing, 7. The reasonable ratio basal to topdressing of potassium fertlizer seems to be 2/3 and $N/K_2O$ ratio of fertilization for ear formation stage appeared also as 2/3.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.183-187
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• 2010

Activated carbons (ACs) have been prepared from pitch by the combination of a chemical oxidation with different $H_2O_2$ concentrations i.e., 5, 15, and 25 wt% and a chemical activation with KOH at a constant KOH/pitch ratio of 3/1. The influence of $H_2O_2$ solution on the microporous properties of the pitch and the final activated carbons were invested using XRD, FT-IR, XPS, $N_2$-adsorption, and SEM. XRD indicated that the value of interplanar distance $d_{002}$ increased by chemical oxidation. FT-IR and XPS results showed that the chemical oxidation promoted the formation of surface oxygen functionalities. Also, the specific surface area of the resulting ACs was increased with increasing the concentration of $H_2O_2$ chemical oxidation and showed a maximum value of $2111m^2/g$ at 25 wt% $H_2O_2$ concentration.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.25.2-25.2
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• 2009

Vertically aligned zinc oxide(ZnO) nanorods (NRs) with different surface morphology were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrate with different deposition condition. Based on the surface morphology, ZnO nanostructures are divided into three types: nanoneedles, nanonails and nanorods with rounded tip. Variable temperature photoluminescence (PL) have employed to probe the exciton recombination in high density and vertically aligned ZnO Nanorod arrays. Low temperature photoluminescence measurements do not show any significant yellow emission, but the near band edge excitonic emission shows very strong dependence with the surface morphology. The recombination properties are expected to be different due to different surface-to-volume ratio and distribution of potential fluctuations of intrinsic defects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.430-431
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• 2009

In this study, europium doped strontium silicate ($Sr_2SiO_4:Eu^{2+}$) phosphor has been synthesized by conventional solid-state method and investigated luminescent characteristic. $SrCO_3$ and $SiO_2$ were mixed together by 2:1 mole ratio. Also $NH_4Cl$ was added as a flux. The mixture were sintered at $800^{\circ}C$, $1000^{\circ}C$ for 3h under the atmosphere (5% $H_2$/95% $N_2$). This phosphor can be applicated to the yellow phosphor for white LED because it has yellow emission band (540nm), which emits efficiently under the 370nm excitaion energy.