• Title/Summary/Keyword: O:N ratio

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Photocurrent Characteristics of ZnO Nanoparticles (ZnO 나노입자의 광전류 특성)

  • Jun, Jin-Hyung;Seong, Ho-Jun;Cho, Kyoung-Ah;Kim, Sang-Sig
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.207-207
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    • 2008
  • ZnO is one of the widely utilized n-type semiconducting oxide materials in the field of optoelectronic devices. For its application to the fabrication of promising ultraviolet (UV) photodetectors, ZnO with various structures has been extensively studied. However, study on the photodetectors using zero-dimensional (0-D) ZnO nanoparticle is scarce while the 0-D nanoparticle structure has many advantages compared to the other dimensional structures for absorption of light. In this study, the photocurrent characteristics of ZnO nanoparticles were investigated through a simply pasting of the nanoparticles across the pre-patterned electrodes. Then the photoluminescence (PL) characteristic, photocurrent response spectrum, photo- and dark-current and photoresponse spectrum were investigated with a He-Cd laser and an Xe lamp. An dominant PL peak of the ZnO nanoparticles was located at the wavelength of 380 nm under the illumination of 325-nm wavelength light. The ratio of photocurrent to dark current (on/off ratio) is as high as 106 which is considerable value for promising photodetectors. On the other hand, the time constants in photoresponse were relatively slow. The reasons of the high on/off ratio and relatively slow photoresponse characteristic will be discussed.

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Increasing P/E Speed and Memory Window by Using Si-rich SiOx for Charge Storage Layer to Apply for Non-volatile Memory Devices

  • Kim, Tae-Yong;Nguyen, Phu Thi;Kim, Ji-Ung;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.254.2-254.2
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    • 2014
  • The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.

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A Prediction on the Flammability Limits of Biodiesel Fuel in the High Temperature and Pressure Conditions (고온·고압 조건에서 바이오디젤의 가연한계 예측)

  • Lim, Young Chan;Jung, Jun Woo;Suh, Hyun Kyu
    • Journal of ILASS-Korea
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    • v.24 no.4
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    • pp.157-162
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    • 2019
  • This numerical study was analyzed to predict the flammability limits of biodiesel and diesel fuels in the high temperature and pressure conditions. To achieve this, the biodiesel fuel was simulated with the chemical species of n-heptane (n-C7H16), methyl decanoate (C11H22O2), and methyl-9-decenoate (C11H20O2), and the diesel fuel was substituted the chemical species of n-heptane. The closed 0-D homogeneous reactor model which was employed the 1100 K of ambient temperature and 35 atm of ambient pressure was used for the simulation of constant volume combustion, and the equivalence ratio was changed from 0.3 to 2.5 conditions. In addition, a comparative analysis study was conducted with the results of HCCI engine simulation and flammability limits according to the changes of equivalence ratio. The results of combustion temperature, pressure, and ignition delay were increased when the equivalence ratio elevated from 0.3 to 1.3 conditions because the increase in fuel oxidation rate affects the chemical reaction of the overall combustion process. Furthermore, the CO and NOX production under the rich combustion conditions are considered to have a trade off relationship since the OH radicals and O2 chemical species are greatly affected the CO and NOX production and oxidation processes.

Seasonal and Latitudinal Variations of the F2-Layer during Magnetic Storms

  • Park, Yoon-Kyung;Kwak, Young-Sil;Ahn, Byung-Ho
    • Journal of Astronomy and Space Sciences
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    • v.30 no.4
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    • pp.231-239
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    • 2013
  • To identify seasonal and latitudinal variations of F2 layer during magnetic storm, we examine the change of daily averages of foF2 observed at Kokubunji and Hobart during high (2000~2002) and low (2006~2008) solar activity intervals. It is found that geomagnetic activity has a different effect on the ionospheric F2-layer electron density variation for different seasons and different latitudes. We, thus, investigate how the change of geomagnetic activity affects the ionospheric F2-layer electron density with season and latitude. For this purpose, two magnetic storms occurred in equinox (31 March 2001) and solstice (20 November 2003) seasons are selected. Then we investigate foF2, which are observed at Kokubunji, Townsville, Brisbane, Canberra and Hobart, Dst index, Ap index, and AE index for the two magnetic storm periods. These observatories have similar geomagnetic longitude, but have different latitude. Furthermore, we investigate the relation between the foF2 and the [O]/[$N_2$] ratio and TEC variations during 19-22 November 2003 magnetic storm period. As a result, we find that the latitudinal variations of [O]/[$N_2$] ratio and TEC are closely related with the latitudinal variation of foF2. Therefore, we conclude that the seasonal and latitudinal variations of foF2 during magnetic storm are caused by the seasonal and latitudinal variations of mean meridional circulation of the thermosphere, particularly upwelling and downwelling of neutral atmosphere during magnetic storm.

Production of Water/n-decane Emulsion Fuel and Evaluation of Rheological Stability (물/n-데칸 에멀젼 연료의 제조 및 유변학적 안정성 평가)

  • Kim, Hye Min
    • Journal of Aerospace System Engineering
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    • v.11 no.4
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    • pp.8-14
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    • 2017
  • In this study, the production of proper emulsion fuel and the evaluation of its rheological stability in various experimental conditions were carried out. The W/O (water-in-oil) emulsion fuel was made using n-decane, pure water, and Span 80 was used as a surfactant. Increments of water volume ratio and fuel temperature were the factors, which boosted the phase separation of the emulsion fuel. Rheological characteristics for different water/oil volume ratio, temperature, and elapsed time after the fuel production were examined. As the water volume ratio in the fuel increased, the behavior of non-Newtonian fluid was observed. Viscosity declined as the fuel temperature increased due to the cohesion of water droplets in the fuel. The effect of elapsed time on viscosity was not severe for lower water ratio. However, gradual decrease of viscosity 3 hours after fuel production, in the case of ratio of 3:7, was clearly observed.

Dielectric, Piezoelectric Properties and Temperature Stability of Resonant Frequency in PSN-PMN-PZT Ceramics (PSN-PMN-PZT 세라믹스의 유전 및 압전 특성과 공진 주파수의 온도안정성)

  • 윤광희;류주현;민석규;이명수;서성재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.391-395
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    • 2000
  • In this study, the temperature coefficient of resonant frequency(TC $F_{r}$), dielectric and piezoelectric properties of Pb[(S $b_{1}$2/N $b_{1}$2/)$_{0.0035}$-(M $n_{1}$3/N $b_{2}$3/)$_{0.0065}$-(Z $r_{x}$ $Ti_{1-x}$ )$_{0.90}$] $O_3$ceramics is investigated with Zr/Ti ratio. The dielectric constant and electromechanical coupling factor( $k_{p}$) showed the highest values of 1257, 0.562 respectively when the Zr/Ti ratio is 49.5/50.5. The mechanical quality factor( $Q_{m}$) is the lowest value of 713 when the Zr/Ti ratio is 49.5/50.5, and increased with the decrease of the Zr/Ti ratio. The temperature coefficient of resonant frequency(TC $F_{r}$) change abruptly at the morphotropic phase boundary(MPB), which is between the rhombohedral phase with highly negative TC $F_{r}$ of -106ppm/$^{\circ}C$ and the tetragonal phase with highly positive TC $F_{r}$ of +64pp $m^{\circ}C$ as Zr/Ti ratio changes from 50/50 to 49.5/50.5.50.5..5.50.5.5.

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Dry Etching Characteristics of TiN Thin Films in BCl3/He Inductively Coupled Plasma (BCl3/He 유도결합 플라즈마를 이용한 TiN 박막의 식각 특성)

  • Joo, Young-Hee;Woo, Jong-Chang;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.9
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    • pp.681-685
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    • 2012
  • We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

MoOx/Si Heterojunction for High-Performing Photodetector (MoOx 기반 실리콘 이종접합 고성능 광검출기)

  • Park, Wang-Hee;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.11
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    • pp.720-724
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    • 2016
  • Transparent n-type metal-oxide semiconductor of $MoO_x$ was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of $MoO_x$ on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type $MoO_x$/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer ($MoO_x$) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.

Simulation of a power cycle for a single-cylinder 4-stroke cycle spark ignition engine (단기통 4사이클 스파아크 점화기관 동력사이클의 시뮬레이션)

  • 조양수;유병철
    • Journal of the korean Society of Automotive Engineers
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    • v.5 no.4
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    • pp.47-61
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    • 1983
  • In this paper the simulation of a thermodynamic power cycle for a 4-stroke, single-cylinder, spark-ignition engine was studied. In this simulation the cylinder volume was restricted to two zones, a burnt and an unburnt zone, and the convective heat transfer from cylinder contents to surroundings was considered. The chemical species in burnt gas considered was 12 species including H$_{2}$O, H$_{2}$, OH, H, N$_{2}$, NO, N, CO$_{2}$, CO, $O_{2}$, O and Ar. Using this model, computer program for compression, ignition and expansion processes was composed and pressure, temperature and composition of cylinder gas at each crank angle were computed. The composition of CO$_{2}$, CO, $O_{2}$ in the burnt gas when exhaust valve opens, the maximum temperature, the maximum flame speed and the combustion duration were also computed as a function of equivalence ratio. The relation between burnt mass fraction and burnt volume fraction was also computed.

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Fabrication of Red LED with Mn activated $CaAl_{12}O_{19}$ phosphors on InGaN UV bare chip (InGaN UV bare칩을 이용한 $CaAl_{12}O_{19}:Mn^{4+}$ 형광체의 적색 발광다이오드 제조)

  • Kang, Hyun-Goo;Park, Joung-Kyu;Kim, Chang-Hae;Choi, Seung-Chul
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.4
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    • pp.87-92
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    • 2007
  • A $CaAl_{12}O_{19}:Mn^{4+}$ red phosphor showed the highest emission intensity at a concentration of 0.02mole $Mn^{4+}$ and the high crystallinity and luminescent properties were obtained at $1600^{\circ}C$ firing temperature for 3hr. The synthesized phosphor showed a broad emission band at 658nm wavelength. Red light-emitting diodes(LEDs) were fabricated through the integration of on InGaN UV bare chip and a 1:3 ratio of $CaAl_{12}O_{19}:Mn^{4+}$ and epoxy resin in a single package. This coated LED can be applicable to make White LEDs under excitation energy of UV LED.

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