• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.211-216
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• 1999

Four different $\beta-Si_3N_4$ ceramics with silicon oxynitrides $[Y_10(SiO_4)_6N_2, Yb_4Si_2N_2O_7, Er_2Si_3N_4O_3, \;and La_{10}(SiO_4)_6N_2$, respectivley] as secondary phases have been fabricated by hot-pressing the $Si_3N_4-Re_4Si_2N_2O_7$ (Re=Y, Yb, Er, and La) compositions at $1820^{\circ}C$ for 2h under a pressure of 25 MPa. The high temperature strength and oxidation behavior of the hot-pressed ceramics were characterized and compared with those of the ceramics fabricated from $Si_3N_4-Si_2O_7$ compositions. The $Si_3N_4-Re_4Si_2N_2O_7$composition investigated herein showed comparable high temperature strength to those from $Si_3N_4-Re_2Si_2O_7$ compositions. Si3N4 ceramics from a $Si_3N_4-Y_4Si_2N_2O_7$ composition showed the highest strength of 877 MPa at $1200^{\circ}C$ among the compositions. All $Si_3N_4$ ceramics investigated herein showed a parabolic weight gain with oxidation time at $1400^{\circ}C$ and the oxidation products of the ceramics were $SiO_2$ and $Re_2Si_2O_7$. The $Si_3N_4-Re_4Si_2N_2O_7$ compositions showed inferior oxidation resistance to those from $Si_3n_4-Re_2Si_2O_7$ compositions, owing to the incompatibility of the secondary crystalline phases of those ceramics with $SiO_2$, the oxidation product of Si3N4.Si3N4 ceramics from a $Si_3N_4-Er_4Si_2N_2O_7$ composition showed the best oxidation resistance of 0.375mg/$\textrm{cm}^2$ after oxidation at $1400^{\circ}C$ for 102 h in air among the compositions.

• Journal of Korean Society of Environmental Engineers
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• v.33 no.12
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• pp.907-912
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• 2011

Development of visible light responsive photocatalysts is a promising research area to facilitate utilization of solar energy for hydrogen production via photocatalytic water splitting. In this study two groups of samples, nitrogen (N)-doped niobium pentoxide ($Nb_2O_5$) and titanium dioxide ($TiO_2$) ($Nb_2O_5-N$, $HNb_3O_8-N$, $TiO_2-N$) and N-undoped ones ($Nb_2O_5$ and $TiO_2$) were tested. In order to utilize visible light, nitrogen atoms were doped in selected photocatalysts by using urea. A shift of the absorption edges of the Ndoped samples in the visible light region was observed. Under visible light irradiation, N-doped samples were more prominent photocatalytic activities than the N-undoped samples. Specifically, 99.7% of rhodamine B (RhB) was degraded after 60 minutes of visible light irradiation with $TiO_2-N$. Since $TiO_2-N$ shows the highest activity of RhB degradation, it was supposed to generate the highest current response. However, $HNb_3O_8-N$ showed the highest current response ($63.7mA/cm^2$) than $TiO_2-N$. More interestingly, when we compare the hydrogen production, $Nb_2O_5-N$ produced $19.4{\mu}mol/h$ of hydrogen.

• Journal of Energy Engineering
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• v.8 no.2
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• pp.279-284
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• 1999

Thermal analyses were conducted in a thermogravimetric analyzer by isothermal technique in order to characterize the Korean anthracites-nitrogen oxides reaction. The tested coal sample was Dogae anthracites and compared with SP-1 graphite. Carbon-NO and carbon-N$_2$O reactions were carried out with respect to isothermal reaction temperatures (550$^{\circ}C$-900$^{\circ}C$) and reactant gas partial pressures (5 kPa∼20 kPa). In NO reaction, measured reaction orders of NO concentration and activation energy were 0.45∼0.96 and 39∼l12 kJ/mol, respectively. In N$_2$O reaction, measured reaction orders of N$_2$O concentration and activation energy were 0.62∼0.87 and 190∼215.3 kJ/mol, respectively. Compared the Korean anthracites-nitrogen oxides reaction with the combustion reaction, the reaction rate in the oxidation below 700$^{\circ}C$ decreases in the order O$_2$>NO>N$_2$O. But above 700$^{\circ}C$, the reaction rate of N$_2$O is faster than that of NO.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.90-95
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• 2000

The substrate for pyroelectric IR sensor which has orientation similar to MgO single crystal was fabricated by depositing the MgO thin film on $Si_3N_4/SiO_2/Si_3N_4$/Si. The MgO thin film was deposited by RF magnetron sputtering. The c-axis orientation of PLT thin film deposited on Pt/MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si substrate was investigated. The MgO thin film deposited at $500^{\circ}C$ at a gas pressure of 30 mTorr with RF power of 160 W exhibited a good a-axis orientation. The PLT thin films deposited on these substrates also exhibited c-axis orientation similar to the PLT thin films deposited on MgO single crystal substrate.

• Journal of Environmental Health Sciences
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• v.29 no.1
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• pp.62-66
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• 2003

The biological denitrification batch tests were conducted to optimize the operating conditions with various temperature and initial SCO $D_{Cr}$ /N $O_3$-N ratio. and the denitrification rates were analyzed various SCO $D_{Cr}$ /N $o_3$-N ratio of influent with swine wastes fermented and temperature. The finishing time of denitrification was within 15 hours, 12 hours, and 6 hours as the temperature of denitrification applied were 15$\pm$1$^{\circ}C$, 25$\pm$1$^{\circ}C$, and 31$\pm$1$^{\circ}C$, respectively. From the batch tests, denitrification rate was operated with over 3 of SCO $D_{Cr}$ /N $O_3$-N ratio. Denitrification rate was increased as the temperature of denitrification, increased such as 2.40-3.90 mg N $O_3$-N/gMLVSSㆍhr, 6.10-7.60 mgN $O_3$-N/gMLVSSㆍhr, and 14.40-15.88 mgN $O_3$-N/gMLVSSㆍhr, respectively. The denitrification rate was increased as the ratio of initial SCO $D_{Cr}$ N $O_3$-N increased. However, it was found that the suitable ratio of SCO $D_{Cr}$ /N $O_3$-N for denitrification should be considered because the ratio of mg SCO $D_{Cr}$ , consumed per mg N $O_3$-N removed varied depend on the influent SCO $D_{Cr}$ /TKN ratios.

• Microbiology and Biotechnology Letters
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• v.46 no.3
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• pp.181-193
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• 2018

Nitrous oxide ($N_2O$) is a potent greenhouse gas as well as an ozone-depleting substance. $N_2O$ is emitted during the biological nitrogen removal process in wastewater treatment systems (WTSs), and has significant environmental impacts. In this study, $N_2O$ emission in WTSs was comprehensively reviewed to better understand the effects of key parameters on $N_2O$ emission and obtain useful guidelines for $N_2O$ mitigation strategies in WTSs. Three biological pathways leading to $N_2O$ emission are hydroxylamine oxidation, nitrifier denitrification, and heterotrohic denitrification. Measurements at lab-, pilot- and full-scale WTSs have shown large variations in $N_2O$ emission (0-95% of N-loaded) during wastewater treatment. In the full-scale WTSs (0-14.6% $N_2O$ of N-loaded), the average and median values were 1.95% and 0.2% of N-loaded, respectively. Dissolved oxygen, nitrite concentrations, and chemical oxygen demand (COD)/N ratio are the most important parameters leading to $N_2O$ emission. A variety of operational strategies have been suggested to minimize $N_2O$ emission from WTSs. A new $N_2O$ mitigation strategy involving the introduction of microorganisms with high $N_2O$ reductase activity or oxygenic denitrification ability has been proposed as an alternative canonical denitrification.

• Proceedings of the Korean Information Science Society Conference
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• 2012.06a
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• pp.385-387
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• 2012

Succinct 표현은 n개의 이산 객체를 정수 값으로 표현하는 대신 이진화하여 표현하는 방법으로 o(n) bit만을 사용하는 공간 효율적인 방법이다. Succinct 표현을 위한 1차원 비트스트링은 이산 객체의 저장 위치에 접근하기 위해서 rank와 select 함수를 필요로 하며, 다양한 연구들에 의해 현재 rank와 select 함수는 o(n) 비트를 사용하여 O(1) 시간에 수행되고, 실용적인 구현이 가능하다. 또한, 2차원 비트 스트링에 대한 연구도 진행되어, 현재 O($n^2$) bit를 사용하여 O(logn) 시간에 rank를, O($log^2n$) 시간에 select를 수행할 수 있다. 본 논문에서는 2차원 비트스트링 상에서의 rank 및 select 함수를 새롭게 정의하고 o($n^2$) 비트만을 사용하여 O(logn) 시간에 rank 질의를, 그리고 O($log^2n$)시간에 select 질의를 수행할 수 있는 방법을 제안한다.

• Journal of the Korean Geographical Society
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• v.43 no.4
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• pp.620-637
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• 2008

$Che{\breve{o}}n$ (提堰) refers to the irrigation facilities used to provide water to the land on which rice is farmed. As the maintenance of $Che{\breve{o}}n$ required great amounts of capital, labor, and technology, the construction and maintenance of such facilities was controlled by the government. $Che{\breve{o}}n$ was perceived as being of particular importance during the $Che{\breve{o}}n$ era, which adopted agriculture as the basis of state management. Therefore, the management of $Che{\breve{o}}n$ was considered to be one of the main state policies. This is why $Che{\breve{o}}n$-related records can often be found in the historical documents written during the $Che{\breve{o}}n$ era. As such historical documents in the form of Jiriji (地理誌, geographical descriptions) include detailed descriptions of the number, size, and location of $Che{\breve{o}}n$ in individual counties($kunby{\breve{o}}n$), these help to conduct comprehensive analysis of the state of $Che{\breve{o}}n$ during the $Che{\breve{o}}n$ era. Based on these facts, this study attempts to establish a database of the $Che{\breve{o}}n$-related contents included in the <$Y{\breve{o}}jitos{\breve{o}}$(與地圖書)> published during the latter period of $Che{\breve{o}}n$, and using the established database, to identify the regional characteristics of $Che{\breve{o}}n$. More precisely, by analyzing the state of the distribution of $Che{\breve{o}}n$ at the national level, an effort was made to review the regional characteristics of $Che{\breve{o}}n$ in terms of their distribution and of the natural geographical conditions found in the locales where $Che{\breve{o}}n$ were located, as well as of the interrelation between such $Che{\breve{o}}n$ and socioeconomic factors such as the scale of the population and the size of the area under cultivation. Other factors which were delved into included matters related to the size of $Che{\breve{o}}n$ such as their perimeter, length, and scale of the area which they irrigated, the characteristics of the locales where $Che{\breve{o}}n$ were located, and the regional differences in the characteristics of $Che{\breve{o}}n$.

• Journal of IKEEE
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• v.11 no.4
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• pp.152-157
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• 2007

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated and the effect of ${N_2}O$ plasma on the electrical characteristics of the devices was investigated. The HEMT exposed to ${N_2}O$ plasma formed by 40 W of RF power in a chamber with pressure of 20 mTorr at a temperature of $200^{\circ}C$, exhibited a reduction of gate leakage current from 246 nA to 1.2 pA by 10 seconds treatment. The current between the two isolated active regions reduced from 3 uA to 7 nA and the sheet resistance of the active layer was lowered also. The variations of electrical characteristics for HEMT were occurred within a short time expose of 10 seconds and the successive expose did not influence on the improvements of gate leakage characteristics and conductivity of the active region. The reduced leakage current level was not varied by successive $SiO_2$ deposition and its removal. The transconductnace and drain current of AlGaN/GaN HEMTs were increased also by the expose to the ${N_2}O$ plasma.

• Journal of Computing Science and Engineering
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• v.3 no.1
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• pp.15-26
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• 2009

Given an n-length text T over a $\sigma$-size alphabet, we present a compressed representation of T which supports retrieving queries of rank/select/access and updating queries of insert/delete. For a measure of compression, we use the empirical entropy H(T), which defines a lower bound nH(T) bits for any algorithm to compress T of n log $\sigma$ bits. Our representation takes this entropy bound of T, i.e., nH(T) $\leq$ n log $\sigma$ bits, and an additional bits less than the text size, i.e., o(n log $\sigma$) + O(n) bits. In compressed space of nH(T) + o(n log $\sigma$) + O(n) bits, our representation supports O(log n) time queries for a log n-size alphabet and its extension provides O(($1+\frac{{\log}\;{\sigma}}{{\log}\;{\log}\;n}$) log n) time queries for a $\sigma$-size alphabet.