• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.106-111
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• 2000

The magnetic thin films can be prepared without vacuum process and under the low temperature (<100 $^{\circ}C$) by ferrite plating. We have performed ferrite plating of M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$(x=0.00~0.08) films and N $i_{x}$Z $n_{0.22}$F $e_{*}$2.78-x/ $O_4$(x=0.00~0.15) films on cover glass at the substrate temperature 90 $^{\circ}C$. The crystal structure of the samples has been identified as a single phase of polycrystal spinel structure by x-ray diffraction technique. The lattice constant in the M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$films increases but in the N $i_{x}$Z $n_{0.22}$F $e_{*}$2.78-x/ $O_4$films decrease with the composition parameter, x. The saturation magnetization in the M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$films does not greatly change, in agreement with observations on bulk samples.k samples.k samples.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.147-153
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• 1998

The strain characteristics of a fiber optic Fabry-Perot pressure sensor with high sensitivity using a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ (N/O/N) diaphragm is experimentally investigated. A 600 nm thick N/O/N diaphragm was fabricated by silicon anisotropic etching technology in 44 wt% KOH solution. An interferometric fiber optic pressure sensor has been manufactured by using a fiber optic Fabry-Perot intereferometer and a N/O/N diaphragm. The 2 cm length fiber optic Fabry-Perot interferometers in the continuous length of single mode fiber were produced with two pieces of single mode fiber coated with $TiO_{2}$ dielectric film utilizing the fusion splicing technique. The one end of the fiber optic Fabry-Perot interferometer was bonded to a N/O/N diaphragm. and the other end was connected to an optical setup through a 3 dB coupler. For the N/O/N diaphragm sized $2{\times}2\;mm^{2}$ and $8{\times}8\;mm^{2}$, the pressure sensitivity was measured 0.11 rad/kPa and 1.57 rad/kPa, respectively, and both of the nonlinearities were less than 0.2% FS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.90-93
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• 1992

In this paper, MOS characteristics of gate dielectrics prepared by furnace oxidation of Si in an $N_2O$ ambient have been studied. Compared with the oxides grown in $O_2$, $N_2O$ oxides show significantly improved breakdown field and low flat band voltage. Also, $N_2O$ oxide is more controllable for ultrathin film growth than $O_2$ oxide. This improvement is caused by nitrogen incorporation into the $N_2O$ oxide. Therefore, the nitrogen-rich-layer at the Si/$SiO_2$ interface formed during $N_2O$ oxidation not only strengthen $N_2O$ oxide structure at the interface and improves the gate dielectric quality, it also acts as a oxidant diffusion barrier that reduces the oxidation rate significantly.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.131-131
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• 2012

We present our recent temperature-programmed desorption (TPD) study on catalytic reductions of $NO_x$ such as NO, $NO_2$, and $N_2O$ over rutile $TiO_2$(110) surfaces. Our results indicate that $NO_2$/NO readily reacts to give NO/$N_2O$ desorption at the substrate temperature as low as 100 K/70 K. Interestingly, $N_2O$, however, does not dissociate into $N_2$ and $O_{BBO}$ over the oxygen vacancy on the $TiO_2$(110) surface. Successive reduction of NO and $NO_2$ into $N_2O$ and NO, respectively, leaves oxygen atoms on the $TiO_2$(110) surface in a form of $O_{ad}$, which can induce additional reductive channels of NO and $NO_2$ at higher temperatures up to 400 K. During the repeated TPD cycles of $NO_x$, our x-ray photoelectron spectroscopy (XPS) analysis indicates that no N atom accumulates on the $TiO_2$ surface.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.498-504
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• 2014

Particulate nitride composites have been fabricated by sintering the compacted powder of AlN and 5 - 64.3 mol% $Al_2O_3$, with a small addition of $Y_2O_3$ ($Y_2O_3$/AlN, 1 wt%), in 1-atm nitrogen gas at $1650-1900^{\circ}C$. The composites were characterized in terms of sintering behavior, phase relations, microstructure and thermal shock resistance. AlN, 27R AlN pseudopolytype, and alminium oxynitride (AlON, $5AlN{\cdot}9Al_2O_3$) were found to existin the sintered material. Regardless of batch composition, the AlN-$Al_2O_3$ powder compacts exhibited similar sintering behavior; however, the degree of shrinkage commonly increased with increasing $Al_2O_3$ content, consequently giving high sintered bulk density. By increasing the $Al_2O_3$ addition up to ${\geq}50 mol%$, the matrix phase in the sintered material was converted from AlN or 27R to AlON. Above $1850^{\circ}C$, a liquid phase was formed by the reaction of $Al_2O_3$ with AlN, aided by $Y_2O_3$ and mainly existed at the grain boundaries of AlON. Thermal shock resistance was superior in the sintered composite consisting of AlON with dispersed AlN or AlN matrix phase.

• Korean Journal of Soil Science and Fertilizer
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• v.48 no.3
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• pp.163-169
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• 2015

The level of nitrous oxide ($N_2O$), a long-lived greenhouse gas, in atmosphere has increased mainly due to anthropogenic sources, especially application of nitrogen fertilizers. Quantifying $N_2O$ emission in the agricultural field is essential to develop national inventories of greenhouse gases (GHGs) emission. The objective of this study was to develop an emission factor to estimate the direct $N_2O$ emission from an agricultural field cultivated with the Chinese cabbage during autumn season in 2010-2012. Emission factor of $N_2O$ calculated over three years experiment using accumulated $N_2O$ emission, nitrogen fertilization rate, and background $N_2O$ emission was $0.0058{\pm}0.00254kg\;N_2O-N\;kg^{-1}\;N$. More extensive studies need to be conducted to develop $N_2O$ emission factors for other upland crops in the various regions of Korea because $N_2O$ emission is influenced by many factors including climate characteristics, soil properties, and agricultural practices as well as crop species.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.117-127
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• 1994

In this paper, electrical and reliability properties of N$_2$O oxides, grown at the temperature of 95$0^{\circ}C$ and 100$0^{\circ}C$ to 74$\AA$, and 82$\AA$. respectively, using NS12TO gas in a conventional furnace, have been compared with those of pure oxide grown at the temperature of 850 to 84$\AA$ using O$_2$ gas. Initial IS1gT-VS1gT characteristics of N$_2$O oxides were similar to those of pure oxide, and reliability properties of N$_2$O oxides, such as charge trapping, interface state density and leakage current at low electric field under F-N stress, were improved much better than those of pure oxide. But, with increasing capacitor area. TDDB characteristics of N$_2$O oxides were more degraded than those of pure oxide and this degradation of TDDB characteristics was more severe in 100$0^{\circ}C$ N$_2$Ooxide than in 95$0^{\circ}C$ N$_2$O oxide. The improvement of reliability properties excluding TDDB in N$_2$Ooxides was attributed to the hardness of the interface improved by nitrogen pile-up at the interface of Si/SiO$_2$, but on the other hand, the degradation of TDDB characteristics in N$_2$O oxides was obsered due to the increase of local thinning spots caused by excessive nitrogen at interface during the growth of N$_2$O oxides.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.617-625
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• 1995

In order to reduce reflectance of soda-lime glass having average reflectance of 7.35% and refractive index of 1.53, single (SiO2), double (SiO2/20SiO2-80ZrO2), and triple (SiO2/ZrO2/75SiO2-25ZrO2) layers were designed and fabricated on the glass substrate by Sol-Gel method. Stble sols of SiO2-ZrO2 binary system for antireflective (AR) coatings were synthesized with tetraethyl orthosilicate (TEOS) and zirconium n-butoxide as precursors and ethylacetoacetate (EAcAc) as a chelating agent in an atmosphere environment. Films were deposited on soda-lime glass at the withdrawal rates of 3~11 cm/min using the prepared polymeric sols by dip-coating and they were heat-treated at 45$0^{\circ}C$ for 10 min to obtain homogeneous, amorphous and crack-free films. In case of SiO2-ZrO2 binary system, refractive index of film increased with an increase of ZrO2 mol%. Designed optical constant of films could be obtained through varying the withdrawal rate. In the visible region (380~780nm), reflectance was measured with UV/VIS/NIR Spectrophotometer. Average reflectances of the prepared single-layer [SiO2 (n=1.46, t=103nm)], double-layer [SiO2 (n=1.46, t=1-4nm)/20SiO2-80ZrO2 (n=1.81, t=82nm)], and triple-layer [SiO2 (n=1.46, t=104nm)/ZrO2 (n=1.90, t=80nm)/75SiO2-25ZrO2 (n=1.61, t=94 nm)] were 4.74%, 0.75% and 0.38%, respectively.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.121-126
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• 2003

The electromagnetic properties and microstructures of the basic composition of (N $i_{0.2}$C $u_{0.2}$Z $n_{0.6}$)$_{1.085}$(F $e_2$ $O_3$)$_{0.915}$ were invested by changing of the additive Sn $O_2$, CaO amounts and ferrite processes. There is no variation of grain size by changing additive amount. It can reduce the total loss when (N $i_{0.2}$C $u_{0.2}$Z $n_{0.6}$)$_{1.085}$(F $e_2$ $O_3$)$_{0.915}$ composition sintered at 1150 $^{\circ}C$ better than 130$0^{\circ}C$. Additive CaO confirmed of useful addition for the reduce total loss, because it increasing sintering density. Decreasing total loss were observed by adding both Sn $O_2$ 0.06 wt％ and CaO 0.4 wt％.

• Proceedings of the Korean Information Science Society Conference
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• 2000.04a
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• pp.701-703
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• 2000

본 논문에서는 정규 기저 표현(normal bases repersentation)을 갖는 GF(2n)상에서의 병렬 멱승 연산에 있어서 2 가지의 개선 사항을 기술한다. 첫째는,k를 윈도우 길이로 할 때 라운드가 [log k]+[log[n/k]]로 고정된 경우에 현재까지 알려진 방법보다 더 작은 수의 프로세서를 갖는 방안이다. 둘째는 점근적인(asymptotic)분석을 통하여 GF(2n)상에서의 병렬 멱승 연산이 O(n/log2n)개의 프로세서로 O(logn)라운드에 수행될 수 있음을 보인다. 이것은 m로세서 $\times$라운드의 바운드를 O(n/logn)으로 하는 것으로 이전까지 알려졌던 O(n)을 개선한 것이다.