• Journal of the Korean institute of surface engineering
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• v.53 no.3
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• pp.109-115
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• 2020

In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH₄/H₂), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.

• Journal of the Korean institute of surface engineering
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• v.39 no.2
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• pp.82-86
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• 2006

Diamond films were deposited on 10.0$\times$10.0$mm^2$ pretreated (100) Si substrate using $CH_4$, $H_2$ and $O_2$ source gases in a horizontal-type microwave plasma enhanced chemical vapor deposition system. We introduced a cyclic on/off modulation of $CH_4$ and/or $O_2$ flows is a function of the reaction time during the initial deposition stage. Surface morphology and diamond quality of the films were investigated as a function of the different cyclic modulation process of the source gases flows: For the enhancement of the nucleation density, there is an optimal process for the incorporation of oxygen. Diamond qualities of the films were improved by introducing oxygen gas during the initial deposition stage.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.303-308
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• 1999

Dielectric thin films of PLT(28) ($(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$) have been deposited on $Pt/Ti/SiO_2/Si$ substrates in situ by a laser ablation. We have systematically changed the laser fluence from 0.4 J/$cm^2$ to 3 J/$cm^2$, and deposition temperature from $450^{\circ}C\; to\; 700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. The deposition temperature influenced on nucleation energy much stronger than the laser energy density did.

• Computers and Concrete
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• v.15 no.6
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• pp.989-999
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• 2015

An advanced continuum-based multi-physical single particle model was recently introduce for the hydration of tricalcium silicate ($C_3S$). In this model, the dissolution and the precipitation events are modeled as two different yet simultaneous chemical reactions. Product precipitation involves a nucleation and growth mechanism wherein nucleation is assumed to happen only at the surface of the unreacted core and product growth is characterized via a two-step densification mechanism having rapid growth of a low density initial product followed by slow densification. Although this modeling strategy has been shown to nicely mimic all stages of $C_3S$ hydration - dissolution, dormancy (induction), the onset of rapid hydration, the transition to slow hydration and prolonged reaction - the major criticism is that many adjustable parameters are required. If formulated correctly, however, the model parameters are shown here to be statistically independent and significant.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.990-995
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• 1998

본 연구에서는 PZT(20/80)과 PZT(80/20) 금속 alkoxide용액을 Pt/Ti/$SiO_2$/Si 기판위에 상호 반복시킨 강유전성 PZT(20/80)/PZT(80/20) 이종층 박막을 제작하였다. 건조와 소결을 한번 행한 PZT 이종층 박막의 평균 두께는 약 80~90 nm이었다. 제작된 모든 PZT 박막은 rosette상이 없는 치밀하고 균질한 미세구조를 나타내었으며, 하부의 PZT층은 열처리시 상부 PZT층은 열처리시 상부 PZT 박막의 페로브스카이트 형성에 대해 nucleation site로 작용하였다. 유전상수, 피로특성 및 누설전류특성 등은 단일 조성의 PZT(20/80), PZT(80/20) 박막에 비해 우수한 특성을 나타내었다.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2003.10a
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• pp.185-189
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• 2003

The effect of surface roughness of the substrate on HF-CVD diamond coating was researched. The surface roughness was changed variously by electro-chemical etching conditions. The etching process acted to remove the metallic cobalt from the WC-Co. Diamond nucleation density was higher in etched the substrate. Therefore, the etching process was effective in both Co-removal and higher surface roughness, leading to the improving the diamond nucleation and deposition.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.815-821
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• 1992

The batches having excess SiO2 to tetrasilicic mica KMg2.5 (Si4O10)F2 were melted at 1450℃. The fabricated samples were heat-treated for the nucleation and the crystallization. The crystallized samples were investigated on several properties. The tetrasilicic mica composition with excess 10 wt% SiO2 was successful both in glassifying and in crystallizing. The optimum temperatures for the nucleation and the crystallization were 680℃ and 1000-1100℃, respectively. The mica and the cristobalite crystallines were identified after heat-treatment. The properties of the samples processed appropriately were as follows, bulk density 2.64g/㎤, thermal expansion coefficient ∼80×10-7/℃, Vicker's hardness ∼105 Kgf/㎟, bending strength ∼666Kgf/㎟, dielectric constant ∼11.1, tan δ 2.5%, volume resistivity 2.35×107∼1.3×1011{{{{ OMEGA }}cm, surface roughness 6.984㎛.

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.809-815
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• 1996

When Li2O.2SiO2 glass was crystallized between the temperature of maximum nucleation and the temperature of maximum crystal growth it was found that the control of heating rate had serious effect on the crystallinity and microstructure and the greatly changed physical properties. Density and elastic modulus tends to increase but thermal expansion coefficient decreased with increased crystallinity. When heating rate between the tempe-rature of maximum nucleation and the temperature of maximum crystal growth was 10~5$0^{\circ}C$/hr. crystallinity was increased to result in the increment of strength. When nuclation was done at 44$0^{\circ}C$ for 5 hours and the temperature of crystal growth was held at 575$^{\circ}C$ strength was increased until crystallinity reached 65% and strength was decreased with higher crystallinity. These phenomena could be explained that even for the same crystallinity different heat rates resulted in different number and size of cracks.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.26-26
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• 2000

High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.94-103
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• 1998

We investigated a bias effect for diamond films deposited by a HFCVD(Hot Filament Chemical Vapor Deposition) method using a methane-hydrogen gas mixture. During deposition total chamber pressure, methane concentration, filament temperature and substrate temperature was 20 torr, 1.0%, $2100^{\circ}C$ and $980^{\circ}C$ respectively. Also DC bias was applied during both the nucleation stage and the growth stage systematically. We found that negative bias enhanced the nucleation density at the nucleation stage, but it made a bad influence on the morpholohy of films at the growth stage. Positive bias enhanced the growth rate and resulted in a good morpholohy of films. Therefore we concluded that it was effective to apply the negative bias during the nucleation stage and then to switch into the positive bias during the growth stage in the fabrication of diamond films.