• Korean Journal of Materials Research
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• v.30 no.4
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• pp.160-168
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• 2020

The current density in copper electroplating is directly related with the productivity; then, to increase the productivity, an increase in current density is required. This study is based on an analysis of changes in surface characteristics and mechanical properties by applying the addition of Alcian Blue (AB, C₅₆H₆₈Cl₄CuN₁₆S₄). The amount of Alcian Blue in the electrolytes is changed from 0 to 100 ppm. When Alcian Blue is added at 20 ppm, a seed layer is formed homogeneously on the surface at the initial stage of nucleation. However, crystals electroplated in electrolytes with more than 40 ppm of Alcian Blue are observed to have growth in the vertical direction on the surface and the shapes are like pyramids. This tendency of initial nucleation formation causes protrusions when the thickness of copper foil is 12 ㎛. Thereafter, a lot of extrusions are observed on the group of 100 ppm Alcian Blue. Tensile strength of groups with added Alcian Blue increased by more than 140% compare to no-addition group, but elongation is reduced. These results are due to the decrease of crystal size and changes of prior crystal growth plane from (111) and (200) to (220) due to Alcian Blue.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.51-55
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• 2000

Using modified melt-textured grown targets, YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin films were prepared by pulsed laser deposition technique at the laser energy density from 1 J/cm$_2$ to 4 J/cm$_2$. All the films showed c-axis preferred orientations, however, a-axis outgrowths on the film surface were considerably increased with an increase of the laser energy density. To examine the origin of the a-axis outgrowth formation, the microstructures of films deposited at 2 J/cm$_2$ and 4 J/cm$_2$ were investigated using X-ray diffraction, transmission electron microscopy, and high-resolution electron microscopy. It was shown that a significant number of Y$_2$O$_3$ inclusions were formed during the growth of c-axis oriented films at 4 J/cm$_2$. These inclusions formed nucleation sites for the a-axis outgrowths. It is considered that, due to the unstable growth conditions with a high flux density of incident vapor species and the strain induced by the surrounding c-axis films, the Y$_2$O$_3$ inclusions would prefer the nucleation of α-axis grains.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.94-98
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• 2005

$RuO_2$ is widely studied as a lower electrode material for high dielectric capacitors in DRAM (Dynamic Random Access Memories) and FRAM (Ferroelectric Random Access Memories). In this study, the effects of hydrogen, oxygen, and argon Electron Cyclotron Resonance (ECR) plasma pretreatments on deposited by Metal Organic Chemical Vapor Deposition (MOCVD) $RuO_2$ nucleation was investigated using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) analyses. Argon ECR plasma pretreatment was found to offer the highest $RuO_2$ nucleation density among these three pretreatments. The mechanism through which $RuO_2$ nucleation is enhanced by ECR plasma pretreatment may be that the argon or the hydrogen ECR plasma removes nitrogen and oxygen atoms at the TiN film surface so that the underlying TiN film surface is changed to Ti-rich TiN.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.327.1-327.1
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• 2007

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.531-533
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• 1996

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.360-367
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• 1996

The OISF (Oxidation Induced Stacking Fault)is expected to affect the electrical properties in Si single crystals, and the nuclei of OISF are believed to be formed during the crystal growing process. Initial oxygen concentration, dopant type and its density, and cooling rate are regareded as major factors on OISF formation. In this study, the variations of OISF density under various cooling rate were investigated. Si single crystal was heated to $1400^{\circ}C$ in Ar ambient and cooled down to room temperature at different cooling rate, using horizontal tube furnace. After that, they were oxidized at $1150^{\circ}C$, and then, OISF was observed with optical microscope. The relation between oxide procipitates and OISF nucleation was investigated by FTIR analysis. As a result, it was found that there exists the intermediate cooling rate range in which OISF nucleation is highly enhanced. And also, it was found that OISF nucleation is closely related with silicon oxide procipitation in Si single crystals.

• Polymer(Korea)
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• v.24 no.3
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• pp.342-349
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• 2000

Hollow fiber membranes were prepared via thermally-induced phase separation process followed by stretching process from isotactic polypropylene and soybean oil system. Various operating parameters were examined in terms of their effects on the structure variation and performances of the membrane, and were optimized. Melt viscosity of the melt sample had influence on the formation of the microfibrils, and addition of nucleating agent increased the nucleation density to enhance the interspherulitic pore formation by stretching. Annealing the membrane at its stretched state relaxed the stress induced by stretching and helped the membrane maintain the stretched structure without shrinking. Solid-liquid Phase separation is more prevalent when the nucleating agent was added, and coagulation bath temperature determined the nucleation density, which affected the pore formation by stretching. In the absence of nucleating agent, nucleation was not effective and liquid-liquid phase separation governed the structure formation, which showed the opposite trend to that of the case with nucleating agent.

• The Magazine of the Society of Air-Conditioning and Refrigerating Engineers of Korea
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• v.8 no.3
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• pp.131-150
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• 1979

Recently only a few correlations between various factors due to the different grades of surface roughness for the nucleate pool boiling have been proposed. The main purpose of this work is to test the validity of these types of correlations between related factors to nucleate pool boiling phenomena. The boiling experiments using distilled water were carried out at the heat flux ranging from $7.4\times10^4\;to\;2.4\times10^5kcal/m^2h$ on the sintered porous metal surface with the cavity diameter of 10, n, 40, 70, $100{\mu}$, respectively, at the atmospheric pressure, To determine the bubble sizes, number of nucleation sites, delay and growth time, frequency of bubble emission and rising velocities of bubbles, the high speed motion picture technique was employed. In the correlation $f{\propto}D_b^n$, where f denotes frequency of bubble emission and $D_b$ departure diameter, n, the power factor of $D_b$, have been found to be from -2 to -10/3. The correlation C in the correlation between heat flux q and density of nucleation sites $\frac{N}{A}$, $q=C(\frac{N}{A})^n$, was appeared to be more crucial than the power factor n. The correlation of the heat flux q to the temperature difference ${\Delta}T$ and the density of nucleation sites$\frac{N}{A}$, was proposed to be $$q-460{\Delta}T^{\frac{5}{4}}=K{\Delta}T{\frac{5}{3}}(\frac{N}{A})^{\frac{2}{3}}$$. The values of heat transfer coefficient obtained in this experiments for the porous sintered metal surface appeared to be very high in comparison with the formerly obtained results for the other surfaces.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.333-337
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• 2010

Domain structure and polarization switching in (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20 and 35at% have been investigated in-situ by scanning force microscope (SFM) in a piezoresponse mode under a step DC electrical voltage. In the initial annealed condition, polar nano domains (PND) and domain striations oriented along {110} were observed in x=20 and x=35, respectively. For x=20, domain switching occurs by heterogeneous nucleation, where nucleation is not confined in the vicinity of domain boundaries, but rather can occur throughout the crystal volume. However, for x=35, domain switching tends to be preferentially initiated near pre-existing twin boundaries. With increasing the applying voltage, the nuclei density increased and assembled into {110} striations, indicating a stress-accommodated domain growth process. At higher voltage, nucleation occurs heterogeneously throughout the crystal volume.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.385-388
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• 1999

Electron field emission properties from various CVD diamond films were studied. Diamond films were synthesized by microwave plasma CVD at 1173K and at 673K substrates temperature and pulse microwave plasma CVD at 1173K. B-doped diamond film was synthesized by microwave plasma CVD at 1173K also. Estimation by SEM, both the non-doped diamond film and B-doped diamond film which were synthesized at 1173K substrate temperature were $2~3\mu\textrm{m}$ in diameter and nucleation densities were $10^{8}{\;}numbers/\textrm{cm}^2$ order. The diamond film synthesized at 673K was $0.2\mu\textrm{m}$ in diameter and nucleation densities was 109 numbers/cm2 order. The diamond film synthesized by pulse microwave plasma CVD at 1173K was $0.2\mu\textrm{m}$ in diameter and nucleation density was $10^{9}{\;}numbers/\textrm{cm}^2$ order either. From the result of electron field emission measurement, electron field emission at $20V/\mu\textrm{m}$ from CVD diamond film synthesized by pulse microwave plasma CVD was $37.3\mu\textrm{A}/\textrm{cm}^2$ and the diamond film showed the best field emission property comparison with other CVD diamond.