• 대한기계학회논문집
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• 제13권4호
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• pp.618-624
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• 1989

본 연구의 목적은 낮은 포화 압력하에서의 초음파에 의한 미세포 포움 구조 획득의 가능성을 평가하기 위한 것으로, 이 초음파 가공을 고분자 포움의 연속적인 압출 가공에 적용하기 위한 기초 연구를 이론적 및 실험적으로 수행함에 있다.따라서 미세포구조의 획득이 본 연구의 목적은 아니며 초음파를 이용한 열가소성 수지내의 핵생성 거동에 대한 고찰을 하고자 한다.

• Journal of Electrochemical Science and Technology
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• 제11권3호
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• pp.291-309
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• 2020

Chromium was electrodeposited from deep eutectic solvents-based Cr³⁺ electrolytes on HB-pencil graphite electrode. Factors influencing the electrochemical behavior and the processes of Cr nucleation and growth were explored using cyclic voltammetry and chronoamperometry techniques, respectively. Cr³⁺ reduction was found to occur through an irreversible diffusion-controlled step followed by another irreversible one of impure diffusional behaviour. The reduction behavior was found to be greatly affected by Cr³⁺ concentration, temperature, and type of hydrogen bond donor used in deep eutectic solvents (DESs) preparation. A more comprehensive model was suggested and successfully applied to extract a consistent data relevant to Cr nucleation kinetics from the experimental current density transients. The potential, the temperature, and the hydrogen bond donor type were estimated to be critical factors controlling Cr nucleation. The nucleation and growth processes of Cr from either choline chloride/ethylene glycol (EG-DES) or choline chloride/urea (U-DES) deep eutectic solvents were evaluated at 70℃ to be three-dimensional (3D) instantaneous and diffusion-controlled, respectively. However, the kinetics of Cr nucleation from EG-DES was found to be faster than that from U-DES. Cr nucleation was tending to be instantaneous at higher temperature, potential, and Cr³⁺ concentration. Cr nuclei electrodeposited from EG-DES were characterized at different conditions using scanning electron microscope (SEM). SEM images show that high number density of fine spherical nuclei of almost same sizes was nearly obtained at higher temperature and more negative potential. Energy dispersive spectroscopy (EDS) analysis confirms that Cr deposits were obtained.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권4호
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• pp.164-168
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• 2003

The initial stage of copper electrodeposition has been known to be very important role for morphology and physical properties after final growth. The factors affecting the nucleation are electrode, current density, electrolyte and temperature. Current studies has illuminated the initial nucleation of copper electrodeposition in the viewpoint of the surface status of electrode and analyzed using EIS and SEM observation

• 반도체디스플레이기술학회지
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• 제3권3호
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• pp.45-50
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• 2004

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.

• 한국결정성장학회지
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• 제23권6호
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• pp.291-295
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• 2013

산화 및 수소 분위기 열처리를 통한 화학적 표면 개질로 나노다이아몬드 seed 입자의 응집성 완화 및 초미세나노결정질 다이아몬드 (UNCD) 박막 증착을 위한 핵형성 밀도 향상을 확보하였다. 열처리에 의해 나노다이아몬드 seed 입자표면 작용기가 개질되었고, 제타 전위도 증가하였다. 또한, 응집체 평균 크기가 약 $2{\mu}m$에서 ~55 nm로 크게 감소하였다. $600^{\circ}C$, 수소 열처리된 seed 입자로 seeding 한 Si 기판으로부터 열처리하지 않은 seed 입자에 비해 현저하게 향상된 ${\sim}2.7{\times}10^{11}cm^{-2}$의 매우 높은 핵형성 밀도를 확보하였다.

• 한국세라믹학회지
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• 제18권3호
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• pp.163-170
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• 1981

The crystallization of $Li_2O-SiO_2$ system glasses and the effect of phase separtion to crystal nucleation were studied. The crystallization temperatures of various glasses were determined by DTA and glasses were nucleation heat treated at the temperatures ranging from 45$0^{\circ}C$ to 5$25^{\circ}C$. These glasses were thengown at $700^{\circ}C$ to observable size in the optical microscope. Crystal nucleation rates of various glasses were obtained by estimating the number of crystals per unit volume. The main crystal phase of these glasses identified by X-ray diffraction was lithium disilicate ($Li_2O$.$2SiO_2$). It was found that the crystal nucleation rate of glass (19.5% $Li_2P$-80.5% $SiO_2$), the nearest composition to lithium disilicate, was higher than other glasses. The opalescence caused by phase separation was observed in the nucleation heat treated glass (16.3% $Li_2O$-83.7% $SiO_2$). The result from nucleation density measurement of this glass indicated that the nucleation was enhanced during early stage of phase separation. The molphologies of crystals in glasses and crystal growth rate at $600^{\circ}C$ were also discussed.

• 공업화학
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• 제8권1호
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• pp.84-91
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• 1997

대기압하에서 수소를 첨가한 연소염장치를 이용하여 몰리브덴 기판 위에 다이아몬드 필름을 증착시켰다. 기판 온도의 증가에 따라 핵생성밀도가 증가하였으며, $1000^{\circ}C$ 이상에서는 흑연화되고 이것이 수소 원자에 의해 에칭되었다. $C_2H_2/O_2$ 유량비를 증가시킬수록 핵생성밀도는 증가하였지만 결정형태가 구형화되며 비정질카본이 많이 증착되었다. $H_2$를 첨가하면, 표면 활성도가 향상되어 다이아몬드 핵생성밀도가 증가되었으며, 비정질카본을 에칭시켜 우수한 결정성의 다이아몬드 필름을 얻을 수 있었다. 증착시간을 증가시키면 다이아몬드 필름의 두께가 증가하였다.

• 한국결정성장학회지
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• 제14권1호
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• pp.6-11
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• 2004

Bias 인가된 hot filament CVD 방법을 이용해 티타늄을 RF sputtering 법으로 고속도강에 피복하여 중간 층으로 한 후 다이아몬드 박막을 피복할 때 bias 전압의 영향과 계면 층의 특성을 조사하였다. 다이아몬드 증착 시 bias가 인가될 경우 필라멘트에서 전자 방출이 촉진되어 다이아몬드 핵생성과 성장을 촉진시켰으며 본 실험에서의 최적 증착 조건은 증착 압력 20 torr, bias 인가전압 200V, 기판온도 $700^{\circ}C$로 나타났다. 강에의 다이아몬드 박막 형성 시 중간 층으로서의 티타늄은 Fe 및 C에 대한 확산도가 높고 탄화물 형성 원소이므로 다이아몬드 핵생성 및 성장에 적합한 원소로 나타났다.

• 암석학회지
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• 제5권2호
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• pp.161-167
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• 1996

The CSD (crystal size distribution) of diopside crystals in the calc-silicate hornfels of the Hwanggangni Formation intruded by the Cretaceous Daeyasan granite shows the patterns of continuous nucleation and growth. There is correlation between the distance from the intrusion contact and the slopes from the linear part of log(population density) vs. size diagrams. In the log(population density) vs. size diagrams of the samples systematically collected from the intrusion contact, two different groups are recognized; the slopes for the samples near the intrusion contact (horizontal distance from the contact less than 50m) are gentler (1500$cm^{-1}$) than those for the samples away from the intrusion contact (2500$cm^{-1}$, distance from the contact greater than 100 m). These differences may reflect the differences in growth rates and crystallization time, or the differences in diopside-forming reactions. All of the log(population density) vs. size diagrams show depletion of smaller crystals. The observed depletion may be due to Ostwald ripening or the changes in nucleation rates as the reactant phases diminishes. Similar grouping is also possible for the observed degree of depletion of smaller crystals; the depletion decreases with increasing distance from the intrusion contact, suggesting temperature-dependent rates of Ostwald ripening.

• 한국재료학회지
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• 제11권5호
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• pp.361-366
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• 2001

TiN barrier 막 위에 metal organic chemical vapor deposition (MOCVD)법으로 Cu막을 증착함에 있어 TiN막 표면을 먼저 세정처리하지 않고 바로 Cu막을 증착하려하면 Cu의 핵생성이 어렵고, 그 결과 연속된 Cu막이 형성되지 못한다. 본 연구에서는 SEM, AES, AFM 등의 분석방법을 사용하여 TiN 막 표면에 대한 플라즈마 전처리 세정이 Cu막의 핵생성에 미치는 효과에 관하여 조사하였다. Gu의 전처리 세정방법으로는 direct플라즈마 방식이 원거리 플라즈마 방식보다 훨씬 더 효과적이다. 또한 수소플라즈마 전처리 시 rf-power와 플라즈마 조사시간이 증가함에 따라 세정효과는 더 증대된다. 플라즈마 전처리가 Cu의 핵생성을 고양시키는 원리는 다음과 같다. 플라즈마 내의 수소이온이 TiN과 반응하여 $NH_3$가 됨으로서 질소 성분이 제거되어 TiN이 Ti로 환원된다. Cu는 TiN기판보다는 Ti기판상에서 핵생성이 더 잘 되므로 플라즈마 전처리는 Cu의 핵생성을 돕는 효과를 가져온다.