• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.4
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• pp.618-624
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• 1989

Ultrasonically induced bubble formation in thermoplastic matrix was investigated experimentally and theoretically. polystyrene was saturated with nitrogen under the pressure of 0.2 to 3.45 MPa in a pressure chamber, followed by pressure release and ultrasonic bubble nucleation. Zinc stearate was added to polystyrene as the nucleating agent to induce heterogeneous nucleation. Various mixture of low density polyethylene and polyethylene wax was also saturated with the gas. The foamed specimens with or without ultrasonically induced bubble nucleation was modeled by modifying the classical nucleation theory. The rate of ultrasonic nucleation was predicted for homogeneous and heterogeneous nucleation at a conical cavity. This study showed that the heterogeneous and heterogeneous nucleation at a conical cavity. This study showed that the heterogeneous nucleation must be employed for ultrasonic production of bubbles in a viscous fluid and the homogeneous nucleation for ultrasonic production of bubbles in a low viscosity fluid.

• Journal of Electrochemical Science and Technology
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• v.11 no.3
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• pp.291-309
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• 2020

Chromium was electrodeposited from deep eutectic solvents-based Cr³⁺ electrolytes on HB-pencil graphite electrode. Factors influencing the electrochemical behavior and the processes of Cr nucleation and growth were explored using cyclic voltammetry and chronoamperometry techniques, respectively. Cr³⁺ reduction was found to occur through an irreversible diffusion-controlled step followed by another irreversible one of impure diffusional behaviour. The reduction behavior was found to be greatly affected by Cr³⁺ concentration, temperature, and type of hydrogen bond donor used in deep eutectic solvents (DESs) preparation. A more comprehensive model was suggested and successfully applied to extract a consistent data relevant to Cr nucleation kinetics from the experimental current density transients. The potential, the temperature, and the hydrogen bond donor type were estimated to be critical factors controlling Cr nucleation. The nucleation and growth processes of Cr from either choline chloride/ethylene glycol (EG-DES) or choline chloride/urea (U-DES) deep eutectic solvents were evaluated at 70℃ to be three-dimensional (3D) instantaneous and diffusion-controlled, respectively. However, the kinetics of Cr nucleation from EG-DES was found to be faster than that from U-DES. Cr nucleation was tending to be instantaneous at higher temperature, potential, and Cr³⁺ concentration. Cr nuclei electrodeposited from EG-DES were characterized at different conditions using scanning electron microscope (SEM). SEM images show that high number density of fine spherical nuclei of almost same sizes was nearly obtained at higher temperature and more negative potential. Energy dispersive spectroscopy (EDS) analysis confirms that Cr deposits were obtained.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.164-168
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• 2003

The initial stage of copper electrodeposition has been known to be very important role for morphology and physical properties after final growth. The factors affecting the nucleation are electrode, current density, electrolyte and temperature. Current studies has illuminated the initial nucleation of copper electrodeposition in the viewpoint of the surface status of electrode and analyzed using EIS and SEM observation

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.45-50
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• 2004

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.291-295
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• 2013

Surface chemical modification via air and hydrogen heat treatment was found to relieve the aggregation of nanodiamond (ND) seed particles and lead to a significantly enhanced nucleation density for ultrananocrystalline diamond (UNCD) film growth. After heat treatment in air and hydrogen, modification of surface functionalities and increase in the zeta potential were observed. Mean size of the ND aggregates was also dramatically reduced from ${\sim}2{\mu}m$ to ~55 nm. Si surface seeded with ND particles heat-treated at $600^{\circ}C$ in hydrogen produced a much higher nucleation density of ${\sim}2.7{\times}10^{11}cm^{-2}$ compared to untreated ND seeds.

• Journal of the Korean Ceramic Society
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• v.18 no.3
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• pp.163-170
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• 1981

The crystallization of $Li_2O-SiO_2$ system glasses and the effect of phase separtion to crystal nucleation were studied. The crystallization temperatures of various glasses were determined by DTA and glasses were nucleation heat treated at the temperatures ranging from 45$0^{\circ}C$ to 5$25^{\circ}C$. These glasses were thengown at $700^{\circ}C$ to observable size in the optical microscope. Crystal nucleation rates of various glasses were obtained by estimating the number of crystals per unit volume. The main crystal phase of these glasses identified by X-ray diffraction was lithium disilicate ($Li_2O$.$2SiO_2$). It was found that the crystal nucleation rate of glass (19.5% $Li_2P$-80.5% $SiO_2$), the nearest composition to lithium disilicate, was higher than other glasses. The opalescence caused by phase separation was observed in the nucleation heat treated glass (16.3% $Li_2O$-83.7% $SiO_2$). The result from nucleation density measurement of this glass indicated that the nucleation was enhanced during early stage of phase separation. The molphologies of crystals in glasses and crystal growth rate at $600^{\circ}C$ were also discussed.

• Applied Chemistry for Engineering
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• v.8 no.1
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• pp.84-91
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• 1997

Diamond film was deposited on Mo substrate at atmospheric pressure using a combustion flame apparatus with the addition of $H_2$. With the substrate temperature, the nucleation density of the substrate was increased. At temperatures above $1000^{\circ}C$, some of diamond was partly converted into graphite and etched by hydrogen atoms. With an increase of the $C_2H_2/O_2$ ratio, the nucleation density was increased. But crystals were cauliflower-shaped and a large number of amorphous carbon were deposited. With the addition of $H_2$, the nucleation density of diamond was increased by the improvement of surface activity. Diamond film of high crystallinity was deposited by etching amorphous carbon. With an increase of deposition time, the thickness of diamond film was increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.6-11
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• 2004

The characteristics of interface layer and the effect of bias voltages on the nucleation density and heteroepitaxial growth of diamond films were studied in the hot filament CVD diamond process. Diamond films were deposited on a high speed steel (SKH-51) substrate by bias-assisted hot filament CVD technique with a titanium interlayer. The bias applied for enhancing the emission of electrons from the filament increased the nucleation density and achieving heteroepitaxial growth of CVD diamond. Diamond films obtained at a gas pressure of 20 torr; a bias voltage of 200 V and a substrate temperature of $700^{\circ}C$. Titanium was a suitable element as an interlayer for the diamond deposition on steel because it has high diffusivity of Fe and C as a carbide forming element.

• The Journal of the Petrological Society of Korea
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• v.5 no.2
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• pp.161-167
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• 1996

The CSD (crystal size distribution) of diopside crystals in the calc-silicate hornfels of the Hwanggangni Formation intruded by the Cretaceous Daeyasan granite shows the patterns of continuous nucleation and growth. There is correlation between the distance from the intrusion contact and the slopes from the linear part of log(population density) vs. size diagrams. In the log(population density) vs. size diagrams of the samples systematically collected from the intrusion contact, two different groups are recognized; the slopes for the samples near the intrusion contact (horizontal distance from the contact less than 50m) are gentler (1500$cm^{-1}$) than those for the samples away from the intrusion contact (2500$cm^{-1}$, distance from the contact greater than 100 m). These differences may reflect the differences in growth rates and crystallization time, or the differences in diopside-forming reactions. All of the log(population density) vs. size diagrams show depletion of smaller crystals. The observed depletion may be due to Ostwald ripening or the changes in nucleation rates as the reactant phases diminishes. Similar grouping is also possible for the observed degree of depletion of smaller crystals; the depletion decreases with increasing distance from the intrusion contact, suggesting temperature-dependent rates of Ostwald ripening.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.361-366
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• 2001

It is difficult to obtain high Cu nucleation density and continuous Cu films in Cu-MOCVD without cleaning the TiN substrate prior to Cu deposition. In this study effects of plasma precleaning on the Cu nucleation density were investigated using SEM, XPS, AES, AFM analyses. Direct plasma pretreatment is much more effective than remote plasma pretreatment in enhancing Cu nucleation. Cleaning effects are enhanced with increasing the rf-power and the plasma exposure time in hydrogen plasma pretreatment. The mechanism through which Cu nucleation is enhanced by plasma pretreatment is as follows: Hydrogen ion\ulcorner in the hydrogen plasma react with TiN to form Ti and $NH_3$ Cu nucleation is easier on the Ti substrate than TiN substrate.