• Title/Summary/Keyword: Nucleation behavior

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Study of Particle Emission Contour Construction & Characteristics and Reduction Efficiency of Exhaust-Treatment System of Diesel Engine (승용 디젤 엔진의 후처리 시스템 적용에 따른 나노입자 배출 맵 구축 및 저감특성에 관한 연구)

  • Ko, A-Hyun;Hwang, In-Goo;Myung, Cha-Lee;Park, Sim-Soo;Choi, Hoi-Myung
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.34 no.8
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    • pp.755-760
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    • 2010
  • In this study, we mainly focused on the PM (Particulate Matter) emission characteristics of a diesel engine. To analyze particle behavior in the tail-pipe, particle emission was measured on the engine-out (downstream of turbocharger), each upstream and downstream both of DOC (Diesel Oxidation Catalyst) and DPF (Diesel Particulate Filter). Moreover, particle emission contours on each sampling point were constructed. The reduction efficiency of particle number concentration and mass through the DOC and DPF was studied. Parameters such as EGR (Exhaust Gas Recirculation) and the main injection timing were varied in part load conditions and evaluated using the engine-out emissions. The DMS500 (Differential Mobility Spectrometer) was used as a particle measurement instrument that can measure particle concentrations from 5 nm to 1000 nm. Nano-particles of sizes less than 30 nm were reduced by oxidation or coagulated with solid particles in the tail-pipe and DOC. The DPF has a very high filtration efficiency over all operating conditions except during natural regeneration of DPF.

A New process for the Solid phase Crystallization of a-Si by the thin film heaters (박막히터를 사용한 비정질 실리콘의 고상결정화)

  • 김병동;정인영;송남규;주승기
    • Journal of the Korean Vacuum Society
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    • v.12 no.3
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    • pp.168-173
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    • 2003
  • Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

Effect of Metal Interlayers on Nanocrystalline Diamond Coating over WC-Co Substrate (초경합금에 나노결정질 다이아몬드 코팅 시 금속 중간층의 효과)

  • Na, Bong-Kwon;Kang, Chan Hyoung
    • Journal of the Korean institute of surface engineering
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    • v.46 no.2
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    • pp.68-74
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    • 2013
  • For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

The Effects of Levelers on Electroplating of Thin Copper Foil for FCCL (전기도금법을 이용한 FCCL용 구리박막 제조시 레벨러의 영향 연구)

  • Kang, In-Seok;Koo, Yeon-Soo;Lee, Jae-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.2
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    • pp.67-72
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    • 2012
  • In recent days, the wire width of IC is narrowed and the degree of integration of IC is increased to obtain the higher capacity of the devices in electronic industry. And then the surface quality of FCCL(Flexible Copper Clad Laminate) became increasingly important. Surface defects on FCCL are bump, scratch, dent and so on. In particular, bumps cause low reliability of the products. Even though there are bumps on the surface, if leveling characteristic of plating solution is good, it does not develop significant bump. In this study, the leveling characteristics of additives are investigated. The objective of study is to improve the leveling characteristic and reduce the surface step through additives and plating conditions. The additives in the electrodeposition bath are critical to obtain flat surface and free of defects. In order to form flat copper surface, accelerator, suppressor and leveler are added to the stock solution. The reason for the addition of leveler is planarization surface and inhibition of the formation of micro-bump. Levelers (SO(Safranin O), MV(Methylene Violet), AB(Alcian Blue), JGB(Janus Green B), DB(Diazine Black) and PVP(Polyvinyl Pyrrolidone) are used in copper plating solution to enhance the morphology of electroplated copper. In this study, the nucleation and growth behavior of copper with variation of additives are studied. The leveling characteristics are analyzed on artificially fabricated Ni bumps.

A Study on the Characterization of Neodymium Oxalate by Reaction Crystallization (반응성 결정화에 의한 네오디뮴 옥살레이트 특성 고찰)

  • Yoon, Ho-Sung;Kim, Chul-Joo;Kim, Joon-Soo
    • Resources Recycling
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    • v.13 no.5
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    • pp.37-44
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    • 2004
  • In this study, neodymium oxalate powders were prepared by injecting oxalic acid to the neodymium chloride solution resulted from the acid leaching solution of NdFeB magnet scrap. The effect of experimental conditions on the characteristics of neodymium oxalate powders were investigated. Neodymium oxalate was aggregated by primary particles formed by nucleation, and average size of aggregates was affected by experimental conditions. In a constant volume, increase of reactants affected the average size of aggregate formed by collision of primary particles. In a constant concentration of reactants, agitation speed decreased the size of aggregate due to breakage of particles attached on the surface of aggregate. The number of primary particles decreased with increasing reaction temperature, and the size of aggregates decreased due to the decrease of collision probability. From the results of decomposition behavior of neodymium oxalate, oxalate decomposed from $400^{\circ}C$, and neodymium oxide began to crystallize at above $620^{\circ}C$.

Growth Behavior of Heteroepitaxial β-Ga2O3 Thin Films According to the Sapphire Substrate Position in the Hot Zone of the Mist Chemical Vapor Deposition System (미스트화학기상증착 시스템의 Hot Zone 내 사파이어 기판 위치에 따른 β-Ga2O3 이종 박막 성장 거동 연구)

  • Kyoung-Ho Kim;Heesoo Lee;Yun-Ji Shin;Seong-Min Jeong;Si-Young Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.5
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    • pp.500-504
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    • 2023
  • In this study, the heteroepitaxial thin film growth of β-Ga2O3 was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga2O3 in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga2O3 thin films for various optical and electronic applications.

$M\""{o}ssbauer$ Effet Studies on Nanocrystalline $Fe_{73.5}Cu_{1}Nb_{3}Si_{16.5}B_6$ Alloy (초미세결정립 $ Fe_{73.5}Cu_{1}Nb_{3}Si_{16.5}B_6$ 합금의 $M\""{o}ssbauer$ 효과 연구)

  • 신영남;김재경;양재석;조익한;강신규
    • Journal of the Korean Magnetics Society
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    • v.4 no.1
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    • pp.12-19
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    • 1994
  • The crystallization behavior of the amorphous $Fe_{73.5}Cu_{1}Nb_{3}Si_{16.5}B_{6}$ alloy with isothermal annealing at $552^{\circ}C$ was studied by $M\"{o}ssbauer$ spectroscopy. The amorphous phase was revealed to coexist together with $Do_{3}-FeSi$ nanocrystalline and Cu-duster in annealed alloys by $M\"{o}ssbauer$ spectrum analysis. At the early stage of crystallization, Si content of FeSi is high due to the creation of Cu-cluster, and decreases with annealing until 60 minutes, which results in the increase in the mean hyperfine field of FeSi, and thereafter keeps constant. After 60 minutes, the decrease in the mean hyperfine field of the residual armrphous, in spite of a slight change in the volume fraction of the FeSi and the residual armrphous, is caused by the increase in the content of Nb and B in residual amorphous phase. Both directions of the hyperfine field, those of the FeSi and the residual amorphous, become randomly oriented in about 60 minutes. For FeSi and Cu-duster, the Avrami exponents are 0.51 and O.65, the activation energies are 2.35 eV and 2.44 eV, and the incubation times are 2.4 minutes and 0.8 minutes respectively. Earlier formation of Cu-duster than that of FeSi is coincidence with the fact that Cu atom promotes the nucleation of the FeSi.

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Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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