• Journal of Korea Foundry Society
• /
• v.14 no.6
• /
• pp.520-529
• /
• 1994

This study describes the influence of the trace amount of sulphur on the nucleation behavior of graphite crystals in high purity Fe-C-Si alloys prepared by levitation melting method. Detailed microstructural analyses of high purity(HP) and sulphur added(HP＋S) samples showed that the nucleation of graphite crystals was prevented by sulphur. With decreasing the sulphur content, the shape of graphite crystals tended to spherulitic, and below 2ppm S, that of graphite crystals was only nodular. The critical cooling rate for the nucleation of griphite crystals was calculated as $1.5{\times}10^3k/s$. It is obvious from this work that residual C-C clusters act as an effective nucleation site for graphite crystals and one of the important role of nodularizing elements is to act as scavenger which removes harmful impurities from the solution.

• Proceedings of the KSME Conference
• /
• 2004.04a
• /
• pp.1464-1469
• /
• 2004

In this study, micro square heaters having dimensions of $65{\times}65{\mu}m^2$and $100{\times}100{\mu}m^2$ were fabricated and bubble nucleation experiments on the heaters were performed. Bubble nucleation temperature was also measured using a bridge circuit and the photographs of bubble nucleation and subsequent growth were taken by a camera with a flash unit. Measured bubble nucleation temperatures were found to be closer to the superheat limit of working fluid (FC-72). Also quasi-1D analyses for the square heaters were performed. The quasi-1D analysis yielded proper temperature distribution of the square heater at steady state, however failed to predict the temperature rise up to the steady state. Similar time dependent temperature can be obtained with proper value of thermal diffusivity. For the $100{\times}100{\mu}m^2$ square heater, nucleation of several bubbles was observed while only one bubble was observed to be nucleated on $65{\times}65{\mu}m^2$ heater.

• Journal of Electrochemical Science and Technology
• /
• v.11 no.3
• /
• pp.291-309
• /
• 2020

Chromium was electrodeposited from deep eutectic solvents-based Cr³⁺ electrolytes on HB-pencil graphite electrode. Factors influencing the electrochemical behavior and the processes of Cr nucleation and growth were explored using cyclic voltammetry and chronoamperometry techniques, respectively. Cr³⁺ reduction was found to occur through an irreversible diffusion-controlled step followed by another irreversible one of impure diffusional behaviour. The reduction behavior was found to be greatly affected by Cr³⁺ concentration, temperature, and type of hydrogen bond donor used in deep eutectic solvents (DESs) preparation. A more comprehensive model was suggested and successfully applied to extract a consistent data relevant to Cr nucleation kinetics from the experimental current density transients. The potential, the temperature, and the hydrogen bond donor type were estimated to be critical factors controlling Cr nucleation. The nucleation and growth processes of Cr from either choline chloride/ethylene glycol (EG-DES) or choline chloride/urea (U-DES) deep eutectic solvents were evaluated at 70℃ to be three-dimensional (3D) instantaneous and diffusion-controlled, respectively. However, the kinetics of Cr nucleation from EG-DES was found to be faster than that from U-DES. Cr nucleation was tending to be instantaneous at higher temperature, potential, and Cr³⁺ concentration. Cr nuclei electrodeposited from EG-DES were characterized at different conditions using scanning electron microscope (SEM). SEM images show that high number density of fine spherical nuclei of almost same sizes was nearly obtained at higher temperature and more negative potential. Energy dispersive spectroscopy (EDS) analysis confirms that Cr deposits were obtained.

• Journal of Powder Materials
• /
• v.27 no.5
• /
• pp.394-400
• /
• 2020

Molybdenum trioxide (MoO₃) is used in various applications including sensors, photocatalysts, and batteries owing to its excellent ionic conductivity and thermal properties. It can also be used as a precursor in the hydrogen reduction process to obtain molybdenum metals. Control of the parameters governing the MoO₃ synthesis process is extremely important because the size and shape of MoO₃ in the reduction process affect the shape, size, and crystallization of Mo metal. In this study, we fabricated MoO₃ nanoparticles using a solution combustion synthesis (SCS) method that utilizes an organic additive, thereby controlling their morphology. The nucleation behavior and particle morphology were confirmed using ultraviolet-visible spectroscopy (UV-vis) and field emission scanning electron microscopy (FE-SEM). The concentration of the precursor (ammonium heptamolybdate tetrahydrate) was adjusted to be 0.1, 0.2, and 0.4 M. Depending on this concentration, different nucleation rates were obtained, thereby resulting in different particle morphologies.

• Journal of the Korean Ceramic Society
• /
• v.31 no.12
• /
• pp.1545-1551
• /
• 1994

Various kinetic parameters of the nucleation and crystallization in anorthite glass (CaO.Al2O3.2SiO2) were calculated by nonisothermal differential thermal analysis. Base glass and glass with TiO2 were prepared by melting. In base glass, the temperature where nucleation can occur ranges from 85$0^{\circ}C$ to 9$25^{\circ}C$ and the temperature for maximum nucleation was 900$\pm$5$^{\circ}C$. In glass with TiO2, the nucleation temperature range was 800~875$^{\circ}C$ and the maximum nucleation temperature was 850$\pm$5$^{\circ}C$. Kissinger equation, Bansal equation, and modified Ozawa equation were used for calculating activation energy for crystallization, Ec. The results showed the same activation energies for both glasses with and without TiO2 in the different equations. The shape of maximum exotherm peak and Ozawa equation were used for Avrami exponent, n. The n value for each glass was 2, indicating that each glass crystallized primarily by bulk crystallization.

• Journal of the Korean Ceramic Society
• /
• v.18 no.3
• /
• pp.163-170
• /
• 1981

The crystallization of $Li_2O-SiO_2$ system glasses and the effect of phase separtion to crystal nucleation were studied. The crystallization temperatures of various glasses were determined by DTA and glasses were nucleation heat treated at the temperatures ranging from 45$0^{\circ}C$ to 5$25^{\circ}C$. These glasses were thengown at $700^{\circ}C$ to observable size in the optical microscope. Crystal nucleation rates of various glasses were obtained by estimating the number of crystals per unit volume. The main crystal phase of these glasses identified by X-ray diffraction was lithium disilicate ($Li_2O$.$2SiO_2$). It was found that the crystal nucleation rate of glass (19.5% $Li_2P$-80.5% $SiO_2$), the nearest composition to lithium disilicate, was higher than other glasses. The opalescence caused by phase separation was observed in the nucleation heat treated glass (16.3% $Li_2O$-83.7% $SiO_2$). The result from nucleation density measurement of this glass indicated that the nucleation was enhanced during early stage of phase separation. The molphologies of crystals in glasses and crystal growth rate at $600^{\circ}C$ were also discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.132-132
• /
• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• Bulletin of the Korean Chemical Society
• /
• v.15 no.12
• /
• pp.1054-1058
• /
• 1994

Different behavior on the formation of soluble intermediate was observed depending on the substrate employed during the nucleation of lead dioxide from plumbous ion using a rotating ring-disk electrode. It was found that no soluble intermediate was formed at glassy carbon electrode, while the presence of soluble intermediate could be detected at platinum substrate. From the different anodic behavior of two substrates, the formation of a probable Pb(Ⅲ) soluble intermediate was suggested. A most probable nucleation mechanism at the platinum substrate involving a second order chemical reaction was derived on the basis of rotating disk electrode experiments.

• Particle and aerosol research
• /
• v.5 no.4
• /
• pp.171-178
• /
• 2009

$PM_{2.5}$ is one of critical air pollutants due to its high absorbability of heavy metallic fumes, PAH and bacillary micro organisms. Such a fine particulate matter is often formed through various nucleation processes including condensation. This study attempts to find the nucleation behaviors of $PM_{2.5}$ arisen from coal power stations using a classical heterogeneous Fletcher's theory. The numerical simulation by C-language could approximate the nucleation process of $PM_{2.5}$ from water vapor, of which approach revealed the required energy for embryo formation and embryo size and nucleation rate. As a result of the calculation, it was found that wetting agents could affect the particle nucleation in vapor condensation. In particular, critical contact angle relates closely with the vapor saturation. Particle condensation could be reduced by lowering the angles. The wetting agents aid to decrease the contact angle and surface tensions, thereby may contribute to save the formation energy.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1159-1162
• /
• 2004

A modeling of the nucleation and dynamical behavior of defects from an inhomogeneous surface configuration using fast Q-tensor method is realized. On modeling the defect nucleation and dynamics, A fast Q-tensor method is applied. From the numerical modeling, we confirmed that surface inhomogeneity which makes strong strain energy in the local liquid crystal director field could cause defects. Experimental result has compared with numerical modeling in order to verify the simulation of the defect nucleation.