• Title/Summary/Keyword: Nucleation and growth

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Studies on the Nucleation of CVD Tungsten on the TiN substrate (TiN 기판상에서의 CVD텅스텐의 핵생성에 관한 연구)

  • Kim, Eui-Song;Lee, Chong-Mu;Lee, Jong-Gil
    • Korean Journal of Materials Research
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    • v.2 no.2
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    • pp.110-118
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    • 1992
  • When CVD-W films deposited on the reactively sputter-deposited TiN(${\circled1}$), the $NH_3$-RTP (rapid themal processed) TiN(${\circled2}$), and the furnace-annealed TiN submitate (${\circled3}$) by $SiH_4$, reduction, deposition rate is in the order of ${\circled1}>{\circled2}>{\circled3}$ and incubation period of W nucleation is in the order of ${\circled1}{\leq}{\circled2}<{\circled3}$. The longest incubation period of nucleation and lowest deposition rate for the CVD-W on the annealed TiN is due to the incorporation of oxygen from the nitrogen ambient containing some oxygen as contaminant into the TiN film. The higher W deposition rate and the lower incubation period of W nucleation on the RTP-TiN substrate in comparison with those on the sputtered TiN substrate seem to be due to a negative effect of the high compressive stress of the RTP-TiN on the nucleation and growth of W. Also the thickness uniformity of the W film deposited on the TiN substrate by $SiH_4$ reduction turns out to be better than that by $H_2$ reduction.

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Effect of $TiO_2$ on crystallization of silicate glass containing EAF dust (전기로 제강 더스트가 포함된 규산염계 유리의 결정화에 미치는 $TiO_2$ 영향)

  • Kim, H.S.;Kim, W.H.;Kim, K.D.;Kang, S.G.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.3
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    • pp.115-121
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    • 2008
  • Microstructure of glass-ceramics obtained by heat treating silicate glass containing 50 wt% electric arc furnace dust (EAF dust) and nucleation agents were observed. The crystallization temperature, $T_c$ of glassy specimen measured around $850^{\circ}C$ from different thermal analysis, so the heat treatment condition to obtain glass-ceramic specimen was selected as $950^{\circ}C/15 hr$. The nucleation agent, $TiO_2$ showed the superior effect on enhancing franklinite crystal growth which has stronger mechanical properties and more durable chemical resistance than willemite phase. Some specimens containing $TiO_2$ had the augite crystal phase and increasing $TiO_2$ amount decreased a fraction of willemite and increased a franklinite. Especially, the specimen with 5 wt% $TiO_2$ showed no willemite crystal phase and $1{\sim}2\;{\mu}m$ franklinite crystals dispersed uniformly in glassy matrix. Also, the specimens containing 5 wt% $TiO_2$ mixed with $Fe_2O_3$ showed a dendrite-shaped franklinite crystals caused by coalescence of small crystallites.

Reactive Dye(RB-8, RB-49, RR-218) in Crystallization and Characteristic of Population Density (반응성 염료(RB-8, RB-49, RR-218)의 결정화 및 입도분포 특성)

  • Han, Hyunkak;Lee, Jonghoon;In, Daeyoung
    • Korean Chemical Engineering Research
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    • v.50 no.2
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    • pp.198-203
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    • 2012
  • Salting-out technique was adopted to crystallize dye crystals from dye solution. In this research solubility of dye solution and crystallization kinetics of Reactive dye (RB-8, RB-49, RR-218) was investigated. The empirical expressions of salting-out crystallization kinetics for Reactive dye (RB-8, RB-49, RR-218) in continuous MSMPR crystallizer was RB-8 in crystal growth kinetics $G=7.1{\times}10^{-4}{\Delta}C^{0.67}$ and nucleation kinetics $B^0=3.1{\times}10^{15}{\Delta}C[1.2{\times}10^{-8}+{\Delta}C^{0.7}M_T{^2}]$, RB-49 in crystal growth kinetics $G=5.2{\times}10^{-4}{\Delta}C^{0.3441}$ and nucleation kinetics $B^0=7.2{\times}10^{15}{\Delta}C[3.3{\times}10^{-8}+({\Delta}C)^{0.7}M_T{^2}]$, RR-218 in crystal growth kinetics $G=4.4{\times}10^{-4}{\Delta}C^{0.2361}$ and nucleation kinetics $B^0=6.3{\times}10^{15}{\Delta}C[7.9{\times}10^{-8}+({\Delta}C)^{0.7}M_T{^2}]$. Also, comparison of calculated crystal size distribution applying to characteristic curve method with experimental crystal size showed good agreement.

Metalorganic chemical vapor deposition of semiconducting ZnO thin films and nanostructures

  • Kim Sang-Woo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.1
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    • pp.12-19
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    • 2006
  • Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.

Density control of ZnO nanorod arrays using ultrathin seed layer by atomic layer deposition

  • Shin, Seokyoon;Park, Joohyun;Lee, Juhyun;Choi, Hyeongsu;Park, Hyunwoo;Bang, Minwook;Lim, Kyungpil;Kim, Hyunjun;Jeon, Hyeongtag
    • Journal of Ceramic Processing Research
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    • v.19 no.5
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    • pp.401-406
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    • 2018
  • We investigated the effect of ZnO seed layer thickness on the density of ZnO nanorod arrays. ZnO has been deposited using two distinct processes consisting of the seed layer deposition using ALD and subsequent hydrothermal ZnO growth. Due to the coexistence of the growth and dissociation during ZnO hydrothermal growth process on the seed layer, the thickness of seed layer plays a critical role in determining the nanorod growth and morphology. The optimized thickness resulted in the regular ZnO nanorod growth. Moreover, the introduction of ALD to form the seed layer facilitates the growth of the nanorods on ultrathin seed layer and enables the densification of nanorods with a narrow change in the seed layer thickness. This study demonstrates that ALD technique can produce densely packed, virtually defect-free, and highly uniform seed layers and two distinctive processes may form ZnO as the final product via the initial nucleation step consisting of the reaction between $Zn^{2+}$ ions from respective zinc precursors and $OH^-$ ions from $H_2O$.

Influence of Silicon and Seed Particles on the Reconstruction Characteristics and Exaggerated Grain Growth of MgO Protective Layer by Over-Frequency Accelerated Discharge in ACPDPs

  • Kwon, Sang-Koo;Kim, Jeong-Ho;Moon, Seung-Kyu;Choi, Jong-Kwon;Park, Kyu-Ho;Han, Sung-Su
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.957-960
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    • 2008
  • The influences of silicon and MgO seed particle on the reconstruction characteristics of MgO protective layer were investigated to clarify the mechanism of reconstruction and exaggerated grain growth (EGG) in AC-PDP. The reconstruction and EGG are closely correlated with the driving force for nucleation and growth, interface energy and initial size distribution of MgO protective layer in plasma space during discharge in AC-PDP.

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Growth of Bi2O3 doped ZnO nanostructures fabricated by thermal evaporation method

  • Kim, Gyeong-Beom;Kim, Seon-Hong;Jeong, Yeong-Hun;Lee, Yeong-Jin;Baek, Jong-Hu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.243-243
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    • 2009
  • Bi2O3 doped ZnO nanostructures structure were successfully synthesized by a thermal evaporatiion process and their structural characteristics were investigated. It is demonstrated that the growth condition such as the areal density, pretreatment of the substrates and growth temperature have great influence on the morphology and the alignment of the nanorods arrays. The density of Bi2O3 doped ZnO nanostructures is controlled by the gold (Au) nanoparticle density deposited on the silicon substrates. Relatively homogenous size and shape were observed by introducing gold(Au) seed-layer as nucleation centers on the substrates prior to the VLS reaction. The samples were characterized by X-ray diffraction, scanning electron microscopy.

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The influence of crystalline direction of substrate and depostion conditions on the orientation of diamond films (기판의 결정 방향 및 증착 변수가 다이아몬드 박막의 배향성에 미치는 영향)

  • Lee, Tae-Hoon;Seo, Soo-Hyung;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1542-1545
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    • 2002
  • Experimental works were performed to implement the hetero-epitaxial growth of diamond films on the (100)- and (111)-oriented Si substrates. The deposition process used to prepare diamond films consisted of a bias-enhanced nucleation(BEN) step, accompanied with a growth step using a microwave plasma CVD system. The highly oriented diamond films were deposited under the growth condition of relatively low methane concentrations and high temperatures. Material properties and surface morphologies of deposited diamond films were improved by the addition of carburization step into the deposition process.

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Silicon surface texturing for enhanced nanocrystalline diamond seeding efficiency (나노결정질 다이아몬드 seeding 효율 향상을 위한 silicon 표면 texturing)

  • Park, Jong Cheon;Jeong, Ok Geun;Kim, Sang Youn;Park, Se Jin;Yun, Young-Hoon;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.2
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    • pp.86-92
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    • 2013
  • $SF_6/O_2$ inductively coupled plasmas were employed to texture Si surface as a pretreatment for nanocrystalline diamond film growth. It was found that the $SF_6/O_2$ plasma texturing provided a very wide process window where normalized roughness values in the range of 2~16 could be obtained. Significantly improved nucleation densities of ${\sim}6.5{\times}10^{10}cm^{-2}$ compared to conventional mechanical abrasion were achieved after seeding for the textured Si substrate.

Synthesis of Flake Ag Powder by Polyol Process (폴리올법에 의한 편상의 은 분말 합성)

  • Kim Dong-Jin;Liang Huanzhen;Ahn Jong-Gwan;Lee Jae-Ryeong;Chung Hun-Saeng
    • Journal of Powder Materials
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    • v.11 no.6 s.47
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    • pp.477-485
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    • 2004
  • Monodispersed flaky silver powder was obtained by controlling the ratios of $H_{2}O_{2}/NH_{3}$ and Agin in a mixed solution of ethylene glycol and ammonia with an addition of PVP. The effects of $NH_{3}/Ag,\; H_{2}O_{2}/Ag\;and\;H_{2}PtCl_{6}/Ag$ on its morphology and size were investigated. In $H_{2}O_{2}-NH_{3}-AgNO_{3}\;system,\;NH_{3}/Ag$ molar ratio was found to be an important reaction factor for the nucleation and crystal growth of Ag powder. The synthesis of flaky powder was optimized at over 6 of $NH_{3}/Ag \;and\;5\;of\;H_{2}O_{2}/Ag\;under\;1.0{\times}10^{-3}\;of\;Pt/Ag.\;Moreover,\;as\;the\; NH_{3}/Ag$ molar ratio increased, the size of precipitates was increased regardless of the amount of Pt. In the absence of $H_{2}PtCI$, the morphology and size of reduced Ag powder were found to be irregular in shape $2-4{\mu}m$ in diameter. However, homogenized fine Ag powder was obtained due to heterogeneous nucleation when $H_{2}PtCI$ used as a cat-alyst, and flaky one was synthesized with the addition of Pt over $1.0{\times}10^{-3}$ of Pt/Ag.