• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.255-262
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• 1998

This study investigated the crystallization behaviour of sealing amorphous material heat-treated by conventional and microwave heating source. From X-ray diffraction and SEM analyses, it was shown that microwave heat-treated sample had well-grown $PbTiO_3$crystals and the high degree of crystallinity inspite of its heat-treated condition of shorten time and lower temperature as compared with a conventionally heat-treated sample. It was assumed that microwaves inhibit the nucleation of $PbTiO_3$crystal in nucleation stage, but promote the growth of $PbTiO_3$crystal above the critical size of crystal due to enhanced diffusion effect within the sample.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.45-49
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• 1999

When concentration of vacancies in a CZ silicon crystal is defined by molar fraction XB, the degree of super-saturation $\sigma$ is given by [XB-XBS]/XBS=XB/XBS-1=ln (XB/XBS) because XB/XBS is nearly equal to unity. Here, XBS is the saturated concentration of vacancies in a silicon crystal and XB is a little larger than XBS. According to Bragg-Williams approximation, the chemical potential of the vacancies in the crystal is given by ${\mu}$B=${\mu}$0+RT ln XB+RT ln ${\gamma}$, where R is the gas constant, T is temperature, ${\mu}$0 is an ideal chemical potential of the vacancies and ${\gamma}$ is an adjustable parameter similar to the activity of solute in a solution. Thus, $\sigma$(T) is equal to (${\mu}$B-${\mu}$BS)/RT. Driving force of nucleation of the vacancy agglomeration will be proportional to the chemical potential difference (${\mu}$B-${\mu}$BS) or $\sigma$(T), while growth of the vacancy agglomeration is proportional to diffusion of the vacancies and grad ${\mu}$B.

• Journal of Magnetics
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• v.16 no.3
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• pp.308-311
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• 2011

In order to obtain mono-dispersed Fe NPs with high saturation magnetization, quantitative analysis method to investigate the growth dynamics of the Fe NPs synthesized by a conventional thermal decomposition method has been developed. As a result, fast nucleation process promotes formation of ~4 nm of initial nucleus with a non-equilibrium phase, resulting in low saturation magnetization. And slow particle growth with atomic-scaled surface precipitation mode (< 100 atoms/($min{\cdot}nm^2$)) can form the growth layer on the surface of initial nucleus with high saturation magnetization (~190 emu/$g_{Fe}$) as an equilibrium a phase of Fe. Therefore, higher stabilization of small initial nucleus generated just after the injection of $Fe(CO)_5$ should be one of the key issues to achieve much higher $M_s$ of Fe NPs.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.707-708
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• 2012

• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.83-83
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.112-112
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• 1997

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.11a
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• pp.600-601
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• 2018

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.1-5
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• 1997

The growth mechanism of AMT(Ammonium Meta-Tungstate) crystal was interpreted as two-step model. The contribution of the diffusion step increased with the increase of temperature, crystal size, and supersaturation. The crystal size distribution from a batch cooling crystallizer was predicted by the numerical solution of a mathematical model which uses the kinetics of nucleation and crystal growth. Temperature control of a batch crystallizer was studied using Learning control algorithm. The purity of AMT crystal producted in this investigation was above 99.99%.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3397-3406
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• 2012

Three types of spherulitic morphologies have been investigated in dual substrate mode of Belousov-Zhabotinsky (BZ) type reaction system. Prior to growth of spherulites, three distinct patterning behaviors have been observed sequentially during the reaction process. Initial and the early-phase of reaction showed the emergence of concentric ring-like wave patterns. A colloidal-state of reaction consists of numerous fine solid particles, which forms primarily some nucleation centers of dendritic characters. The nucleation centers were found to grow in sizes and shapes with the progress of reaction. It leads to growth of dendritic-like spherulitic crystal patterns. The resultant spherulites showed transitions in their morphologies, including sea-weeds and rhythmic spherulitic crystal patterns, by the effects substituted organic substrate and in the higher concentration of bromate-initiator respectively. The branching mechanism and crystal ordering of spherulitic textures were studied with help of optical microscope (OPM) and scanning electron microscope (SEM). Characteristics of crystal phases were also evaluated using X-ray diffraction (XRD) and differential thermal analysis (DTA). Results indicated that the compositions of reactants and crystal orderings were interrelated with morphological transitions of spherulites as illustrated and described.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.94-98
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• 2005

$RuO_2$ is widely studied as a lower electrode material for high dielectric capacitors in DRAM (Dynamic Random Access Memories) and FRAM (Ferroelectric Random Access Memories). In this study, the effects of hydrogen, oxygen, and argon Electron Cyclotron Resonance (ECR) plasma pretreatments on deposited by Metal Organic Chemical Vapor Deposition (MOCVD) $RuO_2$ nucleation was investigated using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) analyses. Argon ECR plasma pretreatment was found to offer the highest $RuO_2$ nucleation density among these three pretreatments. The mechanism through which $RuO_2$ nucleation is enhanced by ECR plasma pretreatment may be that the argon or the hydrogen ECR plasma removes nitrogen and oxygen atoms at the TiN film surface so that the underlying TiN film surface is changed to Ti-rich TiN.