Gallotannin (GT) is derived from plant poly phenol and is associated with biological actions in a wide range of cells. In this study, we evaluated the effect of GTon apoptosis and cyclooxygenase-2 (COX-2) expression and attempted to shed light on the mechanism of action in A549 human lung carcinoma cells. We found that GT dramatically induced apoptosis as demonstrated by expression of p53 and active caspase-3 via western blot analysis and fragmented DNA as detected by DNA fragmentation and DAPI staining. We also observed that GT significantly causes COX-2 expression in a dose-dependent manner determined by western blot analysis. Phosphorylation of Akt and p38 was considerably increased by GT in A549 human lung carcinoma cells. Inhibition of Akt and p38kinase with LY294002 or SB203580 suppressed GT-induced apoptosis and COX-2 expression. Furthermore, we have shown that prevention of COX-2 with NS398 or indomethacin does not any effects on apoptosis induced by GT. Taken together, our present results suggest that GT regulates apoptosis and COX-2 expression through Akt and p38kinase pathway in A549, human lung carcinoma cells.
Purpose: Erythropoietin (EPO) has neuroprotective effects in many animal models of brain injury, including hypoxic-ischemic (HI) encephalopathy, trauma, and excitotoxicity. Current studies have demonstrated the neuroprotective effects of EPO, but limited data are available for the neonatal periods. Here in we investigated whether recombinant human EPO (rHuEPO) can protect the developing rat brain from HI injury via modulation of NMDA receptors. Methods: In an in vitro model, embryonic cortical neuronal cell cultures from Sprague-Dawley (SD) rats at 19-days gestation were established. The cultured cells were divided into five groups: normoxia (N), hypoxia (H), and 1, 10, and 100 IU/mL rHuEPO-treated (H+E1, H+ E10, and H+E100) groups. To estimate cell viability and growth, a 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyl-tetrazolium bromide (MTT) assay was done. In an in vivo model, left carotid artery ligation was performed on 7-day-old SD rat pups. The animals were divided into six groups; normoxia control (NC), normoxia Sham-operated (NS), hypoxia-ischemia only (H), hypoxia-ischemia+vehicle (HV), hypoxia-ischemia+rHuEPO before a HI injury (HE-B), and hypoxia-ischemia+rHuEPO after a HI injury (HE-A). The morphologic changes following brain injuries were noted using hematoxylin and eosin (H/E) staining. Real-time PCR using primers of subunits of NMDA receptors (NR1, NR2A, NR2B, NR2C and NR2D) mRNA were performed. Results: Cell viability in the H group was decreased to less than 60% of that in the N group. In the H+E1 and H+E10 groups, cell viability was increased to >80% of the N group, but cell viability in the H+E100 group did not recover. The percentage of the left hemisphere area compared the to the right hemisphere area were 98.9% in the NC group, 99.1% in the NS group, 57.1% in the H group, 57.0% in the HV group, 87.6% in the HE-B group, and 91.6% in the HE-A group. Real-time PCR analysis of the expressions of subunits of NMDA receptors mRNAs in the in vitro and in vivo neonatal HI brain injuries generally revealed that the expression in the H group was decreased compared to the N group and the expressions in the rHuEPO-treated groups was increased compared to the H group. Conclusion: rHuEPO has neuroprotective property in perinatal HI brain injury via modulation of N-methyl-D-aspartate receptors.
Journal of the Korean Institute of Electrical and Electronic Material Engineers
/
v.21
no.7
/
pp.585-593
/
2008
In this work, we report several experimental data capable of evaluating the phase transformation characteristics of GeSbTe pseudobinary thin films comprehensively utilized as phase change materials. The phase transformation of the GeSbTe thin films was confirmed by XRD measurement from amorphous to hexagonal structure via fee structure except for $Ge_8Sb_2Te_{11}$. In addition, X-ray photoelectron spectra analysis revealed to weaken Ge-Te bond for $Ge_2Sb_2Te_5$ and to strengthen the bonds of all elements for $Ge_8Sb_2Te_{11}$ during the amorphous to crystalline transition. The values of optical energy gap $(E_{OP})$ were around 0.71 and 0.50 eV and the slopes of absorption in extended region (B) were ${\sim}5.1{\times}10^5$ and ${\sim}10{\times}10^5cm^{-1}{\cdot}V^{-1}$ for the amorphous and fcc-crystalline structures, respectively. Finally, the kinetics of amorphous-to-crystalline phase change on the GeSbTe films was characterized using a nano-pulse scanner with 658-nm laser diode (power; $1{\sim}17$ mW, pulse duration; $10{\sim}460$ ns).
Proceedings of the Korean Biophysical Society Conference
/
2003.06a
/
pp.30-30
/
2003
Without a definitive resolution of stoichiometry of cardiac Na$^{+}$-Ca$^{2+}$exchange (NCX), we cannot proceed to any quantitative analysis of exchange function as well as cardiac excitation-contraction coupling. The stoichiometry of cardiac NCX, however, is presently in doubt because reversal potentials determined by various groups range between those expected for a 3-to-1 and a 4-to-1 flux coupling. For a new perspective on this problem, we have used ion-selective microelectrodes to quantify directly exchanger-mediated fluxes of $Ca^{2+}$and Na$^{+}$in giant membrane patches. $Ca^{2+}$- and Na$^{+}$-selective microelectrodes, fabricated from quartz capillaries, are placed inside of the patch pipettes to detect extracellular ion transients associated with exchange activity. Ion changes are monitored at various distances from the membrane, and the absolute ion fluxes through NCX are determined via simulations of ion diffusion and compared with standard ion fluxes (Ca$^{2+}$ fluxes mediated by $Ca^{2+}$ ionophore, and Na$^{+}$ fluxes through gramicidin channels and Na$^{+}$/K$^{+}$pumps). Both guinea pig myocytes and NCX1-expressing BHK cells were employed, and for both systems the calculated stoichiometries for inward and outward exchange currents range between 3.2- and 3.4-to-1. The coupling ratios do not change significantly when currents are varied by changing cytoplasmic [Ca$^{2+}$] or by adding cytoplasmic Na$^{+}$. The exchanger reversal potentials, measured in both systems under several ionic conditions, range from 3.1- to 3.3-to-1. Taken together, a clear discrepancy from a NCX stoichiometry of 3-to-1 was obtained. Further definitive experiments are required to acquire a fixed number, and the present working hypothesis is that NCX current has an extra current via ‘conduction mode’.ent via ‘conduction mode’.
Objectives: To compare the efficacy of GnRH antagonist multiple dose protocol (MDP) with that of GnRH agonist long protocol (LP) in controlled ovarian hyperstimulation for in vitro fertilization in patients with high basal FSH (follicle stimulating hormone) level or old age, a retrospective analysis was done. Methods: Two hundred ninety four infertile women (328 cycles) who were older than 41 years of age or had elevated basal FSH level (> 8.5 mIU/mL) were enrolled in this study. The patients had undergone IVF-ET after controlled ovarian hyperstimulation using GnRH antagonist multiple dose protocol (n=108, 118 cycles) or GnRH agonist long protocol (n=186, 210 cycles). The main outcome measurements were cycle cancellation rate, consumption of gonadotropins, the number of follicles recruited and total oocytes retrieved. The number of fertilized oocytes and transferred embryos, the clinical pregnancy rates, and the implantation rates were also reviewed. And enrolled patients were divided into three groups according to their age and basal FSH levels; Group A - those who were older than 41 years of age, Group B - those with elevated basal FSH level (> 8.5 mIU/mL) and Group C - those who were older than 41 years of age and with elevated basal FSH level (> 8.5 mIU/mL). Poor responders were classified as patients who had less than 4 retrieved oocytes, or those with $E_2$ level <500 pg/mL on the day of hCG injection or those who required more than 45 ampules of exogenous gonadotropin for stimulation. Results: The cancellation rate was lower in the GnRH antagonist group than in GnRH agonist group, but not statistically significant (6.8% vs. 9.5%, p=NS). The amount of used gonadotropins was significantly lower in GnRH antagonist group than in agonist group ($34.8{\pm}11.3$ ampules vs. $44.1{\pm}13.4$ ampules, p<0.001). The number of follicles > 14 mm in diameter was significantly higher in agonist group than in antagonist group ($6.7{\pm}4.6$ vs. $5.0{\pm}3.4$, p<0.01). But, there were no significant differences in clinical pregnancy rate (24.5% in antagonist group vs. 27.4% in agonist group, p=NS) and implantation rate (11.4% in antagonist group vs. 12.0% in agonist group, p=NS) between two groups. Mean number of retrieved oocytes was significantly higher in GnRH agonist LP group than in GnRH antagonist MDP group ($5.4{\pm}3.5$ vs. $6.6{\pm}5.0$, p<0.0001). But, the number of mature and fertilized oocytes, and the number of good quality (grade I and II) and transferred embryos were not different between two groups. In each group A, B, and C, the rate of poor response did not differ according to stimulation protocols. Conclusions: In conclusion, for infertile women expected poor ovarian response such as who are old age or has elevated basal FSH level, a protocol including a controlled ovarian hyperstimulation using GnRH antagonist appears at least as effective as that using a GnRH agonist, and may offer the advantage of reducing gonadotropin consumption and treatment period. However, much work remains to be done in optimizing the GnRH antagonist protocols and individualizing these to different cycle characteristics.
Journal of the Korean Institute of Electrical and Electronic Material Engineers
/
v.27
no.9
/
pp.561-565
/
2014
Thermoelectric materials have been the topic of intensive research due to their unique dual capability of directly converting heat into electricity or electrical power into cooling or heating. Bismuth telluride ($Bi_2Te_3$) is the best-known commercially used thermoelectric material in the bulk form for cooling and power generation applications In this work we focus on the large scale synthesis of nanostructured undoped bulk nanostructured $Bi_2Te_3$ materials by employing a novel bottom-up solution-based chemical approach. Spark plasma sintering has been employed for compaction and sintering of $Bi_2Te_3$ nanopowders, resulting in relative density of $g{\cdot}cm^{-3}$ while preserving the nanostructure. The average grain size of the final compacts was obtained as 200 nm after sintering. An improved NS bulk undoped $Bi_2Te_3$ is achieved with sintered at $400^{\circ}C$ for 4 min holding time.
The Transactions of the Korean Institute of Electrical Engineers C
/
v.50
no.9
/
pp.456-465
/
2001
In this paper, breakdown voltages in $SF_6-N_2$ mixtures were experimentally investigated to understand characteristics of dielectric strength and physical phenomena in nonuniform field disturbed by a needle shape protrusion. The test voltages are the lightning impulse$(\pm1.2/44 \mus)$ and the damped oscillatory impulse$(\pm400 ns / 0.83 MHz)$ voltages which can be occurred by the operation of disconnecting switches in gas-insulated switchgears(GIS). The effects of the polarity and wave shape of the test voltages, and the gas pressure on the V-t characteristics were in detail examined. The V-t characteristic curves were measured in different two ways : (1) one is the method by taking the maximum voltage recorded at or prior to breakdown against the time to breakdown, that is, the Procedures recommended in IEC 60060-1, (2) the other is the method by taking the voltage at the instant of chopping against the time to breakdown. As a result, the V-t characteristics of $SF_6-N_2$ mixtures in nonuniform electric field were significantly affected by the polarity and wave shape of the applied voltages. The positive breakdown voltages resulted in lower breakdown voltages in the time ranges considered, and the V-t curves for the negative oscillatory impulse voltage were extended over the longer time range. For the lightning impulse voltages, the V-t curves obtained by IEC Pub. 60060-1 were nearly same with the V-t curves obtained by the voltage at the instant of chopping against the time to breakdown. It is clear that the actual breakdown voltages were much lower than the maximum voltages appearing at or prior to breakdown because of the displacement current produced as a result of the dV/dt during the oscillatory transient voltage app1ication. The scattering of the negative actual breakdown voltages was much larger than that of the positive.
The Transactions of the Korean Institute of Electrical Engineers C
/
v.51
no.6
/
pp.229-235
/
2002
This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.
Objective: To assess the efficacy of cervical open-door laminoplasty by hydroxyapatite implant insertion between the lamina and the lateral mass without suturing. Methods: All patients who underwent cervical open-door laminoplasty with C2/C7 undermining and insertion of hydroxyapatite implants from C3 to C6 were retrospectively evaluated for surgical time and neurological outcomes according to the Japanese Orthopaedic Association (JOA) score. To assess the alignment of the cervical spine and postoperative cervical pain, the C2-7 angle and a visual analogue scale score were used, respectively. Results: The population consisted of 102 women and 222 men ranging in age from 32 to 90 years. The average surgical time was 86 minutes. Fourteen of 1,296 hydroxyapatite implants were kept in place with sutures due to a weak restoration force of the hinge during surgery. No hydroxyapatite implant dislocation was detected on cervical computed tomography at 1 year after surgery. The average JOA score was $10.2{\pm}2.5$ before surgery and $14.6{\pm}2.8$ at 1 year after surgery. The average recovery rate was 61.8%. The average C2-7 angle at the neutral position was $7.1^{\circ}{\pm}6.2^{\circ}$ before surgery and $6.5^{\circ}{\pm}6.3^{\circ}$ at 1 year after surgery. Conclusion: This method enabled us to achieve minimal exposure of the lateral mass, prevention of lateral mass injury and dural injury, and a shorter surgical time while maintaining acceptable surgical outcomes. The idea that firm suture fixation is needed to prevent spacer deviation during cervical open-door laminoplasty may need to be revisited.
The Transactions of the Korean Institute of Electrical Engineers C
/
v.49
no.12
/
pp.673-678
/
2000
The dielectric barrier discharge(DBD) is a common method to create a nonthermal plasma in which electrical energy is used to create electrons with a high average kinetic energy. The unique aspect of dielectric barrier discharges is the large array of short lifetime(10ns) silent discharges created over the surface of the dielectric. A silent discharge is generated when the applied voltage exceeds the breakdown voltage of the carrier gas creating a conduction path between the applied electrode and grounded electrode. As charge accumulates on the dielectric, the electric field is reduced below the breakdown field of the carrier gas and the silent discharge self terminates preventing the DBD cell from producing a thermal arc. In fact, the most significant application of dielectric barrier discharges is to generate ozone for contaminated water treatment. Therefore, experiments were perfomed at 1∼2[bar] pressure using a coaxial geometry single dielectric barrier discharge for ozone concentrations and energy densities. The main result show that the concentration and efficiency of ozone are influenced by gas nature, gas quantity, gas pressure, supplied voltage and frequency.
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