• Title/Summary/Keyword: Novel metal

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Carbon Nanotube Deposition using Helicon Plasma CVD at Low Temperature

  • Muroyama, Masakazu;Kazuto, Kimura;Yagi, Takao;Inoue, Kouji;Saito, Ichiro
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.201-202
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    • 2003
  • We developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of $CH_4/H_2$ gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.

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Thermal Analysis of Gas Sensor Array (가스센서 어레이 열해석)

  • 정완영;임준우;이덕동
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.21-24
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    • 2002
  • A sensor array (35mm'! in diaphragm dimension) of 12 sensing elements with different operating temperatures was optimized with respect to thermal operation. This sensor array with single heater on a glass diaphragm over back-etched silicon bulk realizes a novel concept of a sensor array: an way of sensor elements operated at different temperatures can yield more information than single measurement. The proposed micro sensor array could provide well-integrated way structure because it has only single heater at the center of the diaphragm and used the various sensing properties of two kinds of metal oxide layers with various operating temperatures.

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Study of Improvement of Gate Oxide Quality by Using an Advanced, $TiSi_2$ process & STI (새로운 $TiSi_2$ 형성방법과 STI를 이용한 초박막 게이트 산화막의 특성 개선 연구)

  • 엄금용;오환술
    • Proceedings of the IEEK Conference
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    • 2000.11b
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    • pp.41-44
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    • 2000
  • Ultra large scale integrated circuit(ULSI) & complementary metal oxide semiconductor(CMOS) circuits require gate electrode materials such as meta] silicides, titanium-silicide for gate oxides. Many previous authors have researched the improvements sub-micron gate oxide quality. However, little has been done on the electrical quality and reliability of ultra thin gates. In this research, we recommend novel shallow trench isolation structure and two step TiSi$_{2}$ formation for sub 0.1${\mu}{\textrm}{m}$ gate oxide.

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N-Anthracenylmethyl Calix[4]azacrowns as New Fluorescent Ionophores

  • Yang, Seung-H.;Shon, Ok-J.;Park, Ki-M.;Lee, Shim-S.;Park, Ho-J.;Kim, Moon-J.;Lee, Joung-H.;Kim, Jong-S.
    • Bulletin of the Korean Chemical Society
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    • v.23 no.11
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    • pp.1585-1589
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    • 2002
  • Two novel calixarene-based fluoroionophores were synthesized. Their conformations were confirmed to 1,3-alternate by X-ray crystal structures. From CHEF by blocking the PET mechanism in fluorescence spectra, we observed $In^{3+}$ and $Pb^{2+}$ selectivity over other metal ions. For $In^{3+}$ion, calix[4]-bis-azacrown-5 showed about 20 times more sensitive than calix[4]-mono-azacrown-5 because the source of the binding selectivity comes from the calixarene framework and azacrown ligand by controlling the fluorescence and PET mechanisms as-sociated with the amine moiety.

FinFET for Terabit Era

  • Choi, Yang-Kyu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.1
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    • pp.1-11
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    • 2004
  • A FinFET, a novel double-gate device structure is capable of scaling well into the nanoelectronics regime. High-performance CMOS FinFETs , fully depleted silicon-on-insulator (FDSOI) devices have been demonstrated down to 15 nm gate length and are relatively simple to fabricate, which can be scaled to gate length below 10 nm. In this paper, some of the key elements of these technologies are described including sub-lithographic pattering technology, raised source/drain for low series resistance, gate work-function engineering for threshold voltage adjustment as well as metal gate technology, channel roughness on carrier mobility, crystal orientation effect, reliability issues, process variation effects, and device scaling limit.

Angle-resolved photoemission spectrscopy for chalcogenide and oxide heterostructures (칼코겐화물과 산화물 이종구조의 각도분해능 광전자분광 연구)

  • Chang, Young Jun
    • Vacuum Magazine
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    • v.5 no.2
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    • pp.10-17
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    • 2018
  • Chalcogenide and oxide heterostructures have been studied as a next-generation electronic materials, due to their interesting electronic properties, such as direct bandgap semiconductor, ferroelectricity, ferromagnetism, superconductivity, charge-density waves, and metal-insulator transition, and their modification near heterointerfaces, so called, electronic reconstruction. An angle-resolved photoemission spectroscopy (ARPES) is a powerful technique to unveil such novel electronic phases in detail, especially combined with high quality thin film preparation methods, such as, molecular beam epitaxy and pulsed laser deposition. In this article, the recent ARPES results in chalcogenide and oxide thin films will be introduced.

Highly Stable Photoluminescent and Magnetic Multilayers Using Nucleophilic Substitution Reaction in Organic Media

  • Jo, Jin-Han
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.262-262
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    • 2010
  • We introduce a novel and efficient strategy for producing free-standing functional films via photo-crosslinking and electrostatic layer-by-layer (LbL) assembly, which can allow the buildup of hydrophilic multilayers onto hydrophobic surfaces. Hydrophobic multilayers were deposited on ionic substrates by a photo-crosslinking LbL process using photo-crosslinkable polymers. The photo-crosslinked surface was converted to an anionic surface by excess UV light irradiation. This treatment allowed also the stable adhesion between metal electrode or cationic polyelectrolyte and hydrophobic multilayers. After dissolving the ionic substrates in water, the formed free-standing films exhibited unique functionalities of inserted components within hydrophobic and/or hydrophilic multilayers.

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Asymmetric Ring Opening of Epoxides Catalyzed by Novel Heterobimetallic Schiff-Bases Containing Transition Metal Salts

  • Kawthekar, RahulB;Bi, Wentao;Kim, Geon-Joong
    • Bulletin of the Korean Chemical Society
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    • v.29 no.2
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    • pp.313-318
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    • 2008
  • An enantioselective ring opening of racemic terminal epoxides has been achieved by using heterobimetallic cobalt salen complexes with variety of nucleophiles. They were proven to be highly enantioselective and reactive for the synthesis of valuable chiral building blocks in enantio-riched forms up to 98% ee.

Low Temperature Cure Film Adhesive

  • Liang, Bin;Zhao, Shenglong
    • Journal of Adhesion and Interface
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    • v.5 no.2
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    • pp.1-7
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    • 2004
  • A novel carboxyl terminated butadiene-acrylonitrile (CTBN) modified, low temperature cure epoxy film adhesive was developed in this paper. It can be cured at as low as $75^{\circ}C$ for 4 hours with a pressure of 0.1MPa. After post cure at $120^{\circ}C$ for 2 hours, the bonding strengths of Phosphoric Acid Anodizing(PAA) surface treated aluminum adherend were similar to those of structural film adhesives curing at $120^{\circ}C$. It is suitable to bond both metal/composite laminate-to-laminate and laminate to honeycomb structure.

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(Electrolytic in-Process Dressing)-Grinding of Ceramics (세라믹스의 ELID연삭가공)

  • Ohmori, Hitoshi;Katahira, Kazutoshi
    • Ceramist
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    • v.9 no.6
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    • pp.37-41
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    • 2006
  • A novel grinding technology, known as ELID (Electrolytic In-Process Dressing), which incorporates 'inprocess dressing' of metal- bonded diamond grinding wheels, provides continuous protruding abrasives effectively applied to ceramic grinding. This article describes the ELID-grinding method and introduces its application examples on ceramics

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