• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2002년도 추계학술대회 논문집
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• pp.341-346
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• 2002

The production part requiring multiple processes such as piecing, blanking and notching are performed with a high production rates in progressive die. In order to prevent the defects of process result, the optimum of strip process layout design, die design, die making, and tryout with inspection etc. are needed. According to these factors of die development process, they required theory and practice of metal working process and its background, die structure, machining conditions for die making, die materials, heat treatment of die components, know-how and so on. In this study, we designed and analyzed die components also simulated the strip process layout of multiple stage drawing by DEFORM. Especially the result of tryout and its analysis become to the feature of this study.

• 반도체디스플레이기술학회지
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• 제3권3호
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• pp.5-9
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• 2004

A new wafer level packaging scheme is presented as an alternative to MEMS package. The proof-of-concept structure is fabricated and evaluated to confirm the feasibility of the idea for MEMS wafer level packaging. The scheme of this work is developed using an electroplated tin (Sn) solder. The critical difference over conventional ones is that wafers are laterally bonded by solder reflow after LEGO-like assembly. This lateral bonding scheme has merits basically in morphological insensitivity and its better bonding strength over conventional ones and also enables not only the hermetic sealing but also its electrical interconnection solving an open-circuit problem by notching through via-hole. The bonding strength of the lateral bonding is over 30 Mpa as evaluated under shear and the hermeticity of the encapsulation is 2.0$\times10^{-9}$mbar.$l$/sec as examined by pressurized Helium leak rate. Results show that the new scheme is feasible and could be an alternative method for high yield wafer level packaging.

• 대한구순구개열학회지
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• 제10권1호
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• pp.23-32
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• 2007

The classic triad of diagnostic signs of submucosal cleft palate which may be present are: 1) bifid uvula 2) short palate with no muscle in the midline and 3) hard palate with a submucous notching defect in the posterior midline. The treatment of submucous cleft palate are V-Y push back palatorrhaphy, and superior based pharyngoplasty implant in the posterior pharynx. The best speech results were in those children operated upon in the younger age group (especially at or before 2 years of age), thus pointing up the importance of early diagnosis.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2004년도 춘계학술대회 발표 논문집
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• pp.112-117
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• 2004

본 연구에서는 쏠더를 이용한 새로운 웨이퍼 레벨 실장 기술을 제안하였고 순수 주석도금이 쏠더로서 이용되었다. 제안된 실장 기술의 가장 큰 차별성은 레고 조립처럼 어셈블리 한 후에 쏠더 리프로우를 통해 측면 접합한다는 것이다. 이런 측면 접합 기술은 기본적으로 표면 상태에 매우 둔감하다는 장점과 비아를 통한 전기적 연결 시 끝 단의 노칭(notching)에 의한 전기적 연결 끊김 문제를 해결할 수 있다. 접합강도는 전단 응력을 측정하여 평가하였고, 실장의 기밀성(Hermeticity)는 가압 헬륨 측정법을 통해서 평가되었다. 실험결과로부터 본 실장 기술은 고 수율 웨이퍼 레벨 실장 기술의 대안이며 실행 가능함을 확인할 수 있었다.

• Design & Manufacturing
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• 제12권3호
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• pp.13-18
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• 2018

Flexible display tends to grow every year, It tends to be larger, slimmer, and higher in image quality. Therefore, accuracy is required in the manufacturing process of each part. In the curved monitor, the bottom chassis has a structure to which other parts can be attached. The accuracy of the curvature which the bottom chassis of the curve monitor monitors has is important. If the curvature error is large, serious defects such as cracks, warpage, twisting and the like occur. Curvature was analyzed using 3D scanner. In the Forming process and Restriking process steps, spring go occurred, and spring back occurred in the Notching process and Bending process steps. Even in the same process, it was confirmed that the curvature value varied depending on the formed shape.

• Maxillofacial Plastic and Reconstructive Surgery
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• 제23권3호
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• pp.263-269
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• 2001

하순 및 하악골 정중열은 매우 드문 선천성 기형으로 , 하순절흔에서부터 하악은 물론 경부, 흉부까지 연장되어 다양하게 나타날 수 있으며, 원인은 확실하지 않으나 정중부로의 중배엽의 침투 실패, 하악돌기의 유합부전 그리고 외부 요인들이 논의되고 있다. 치료방법 및 시기에 관해서는 임상소견이 다양하고 증례가 드물기 때문에 많은 논란이 있어왔다. 그러나 현재의 경향은 연조직 기형은 연하 및 발음의 기능적 장애를 예방하기 위하여 가능한 조기에 치료하며, 악골고정을 위한 강선 결찰 혹은 골이식술은 사춘기 후로 미루는 추세이다. 본 교실에서는 저작 장애를 주소로 내원한 8세 여자 환자의 임상소견에서 하악골 정중열과 하순의 수술로 인한 반흔조직 및 하순에서부터 치조골을 가로지르는 섬유성 소대 등을 발견할 수 있었으며, 하악의 정중열을 장골 이식을 이용 하여 양호한 결과를 얻을 수 있었으며, 추후 하순과 순. 설측 전정의 연조직 기형은 심미성과 기능 향상을 위해 부가적인 술식이 필요하리라 생각된다.

• 폴리머
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• 제36권1호
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• pp.59-64
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• 2012

제품의 소형화와 경량화 추세에 따라 부품의 두께가 얇아지는 경향이 있다. 이러한 소형 및 경량 제품의 중요한 설계요소는 소재의 충격강도이다. 충격강도는 재료 고유의 물성값으로 기하학적 형상에 의존하지 않고 일정한 값을 가져야 한다. 그러나 충격강도 시험 시 시편의 두께에 따라 강도의 차이를 보이고 노치(notch)의 생성방법과 노치형상에 따라서도 민감도를 보인다. 본 연구에서는 시편의 두께와 노치형상 및 노치의 생성방법에 따른 충격강도를 알아보았다. 또한 노치의 각도와 노치에 대한 충격 방향에 따른 충격강도도 관찰하였다. 이를 위해 엔지니어링 플라스틱인 PC, ABS, 그리고 POM에 대하여 Izod 충격시험을 수행하였다. 그 결과 실험한 모든 수지에서 두께가 얇아질수록 충격강도가 높아지는 경향을 보였는데 PC수지가 가장 크게 증가하였다. PC수지는 두께가 두꺼울 때는 취성파괴를 보였는데 두께가 얇을 때는 연성파괴 양상을 보였다. 몰드노치 시편이 밀링노치 시편에 비해 충격강도가 높았고, 역방향 노치가 정방향 노치보다 충격강도가 높았다. 본 연구에서 실험한 수지 중에서 노치의 민감성은 PC가 가장 컸으며 다음이 POM, ABS순으로 나타났다.

• Journal of Electrical Engineering and Technology
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• 제1권2호
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• pp.153-160
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• 2006

This paper presents a new compensating system, which consists of a shunt active filter and passive components for mitigating voltage and current disturbances arising from an Electric Arc Furnace (EAF). A novel control strategy is presented for the shunt active filter. An extended method based on instantaneous power theory in a rotating reference frame is developed for extraction of compensating signals. Since voltages at the point of common coupling contain low frequency interharmonics, conventional methods cannot be used for dc voltage regulation. Therefore, a new method is introduced for this purpose. The passive components limit the fast variations of load currents and mitigate voltage notching at the Point of Common Coupling (PCC). A three-phase electric arc furnace model is used to show power quality improvement through reactive power and harmonic compensation by a shunt active filter using the proposed control method. The system performance is investigated by simulation, which shows improvement in power quality indices such as flicker severity index.

• 한국기계가공학회지
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• 제7권3호
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• pp.75-80
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• 2008

The progressive die performs a work of sheet metal processes with a piercing, notching, embossing, bending, drawing, cut-off etc. in many kinds of pressing. Now a days, these processes have been evaluated as a advanced tooling method to increase the productivity and high quality assurance. The first step analyzing of die design is production part review, then the arrangement drawing of product design and strip process layout design should be done as a next steps with a FEM simulation for its problem solution. After upper procedure were peformed, it was started to make the die, then tryout and its revision of the die and product quality, safety, productivity etc. were done continually. For the all of these process, we mobilized the theory and practice of sheet metal forming, die structure, the function and activity of die components, and the others of die machining, die material, heat treatment and know‐how so on. In this study the features of representative are production part analyzing through the FEM simulation of bending area with a considering spring back problem by DEFORM.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.118-119
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• 2009

This paper presents the feature profile evolution silicon deep trench etching, which is very crucial for the commercial wafer process application. The silicon deep trenches were etched with the SF6 gas & Hbr gas based process recipe. The optimized silicon deep trench process resulted in vertical profiles (87o~90o) with loading effect of < 1%. The process recipes were developed for the silicon deep trench etching applications. This scheme provides vertically profiles without notching of top corner was observed. In this study, the production of SF6 gas based silicon deep trench etch process much more strongly than expected on the basis of Hbr gas trench process that have been investigated by scanning electron microscope (SEM). Based on the test results, it is concluded that the silicon deep trench etching shows the sufficient profile for practical MOS FET silicon deep trench technology process.