• Current Optics and Photonics
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• v.7 no.3
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• pp.254-262
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• 2023

Novel thermo-optically focus-switchable Fresnel zone plates based on phase-change metafilms are designed and analyzed at a visible wavelength (660 nm). By virtue of the large thermo-optic response of vanadium dioxide (VO₂) thin film, a phase-change material, four different plasmonic phase-change absorbers are numerically designed as actively tunable Gires-Tournois Al-VO₂ metafilms in two and three dimensions. The designed phase-change metafilm unit cells are used as the building blocks of actively focus-switchable Fresnel zone plates with strong focus switching contrast (40%, 83%) and high numerical apertures (1.52, 1.70). The Fresnel zone plates designed in two and three dimensions work as cylindrical and spherical lenses in reflection type, respectively. The coupling between the thermo-optic effect of VO₂ and localized plasmonic resonances in the Al nanostructures offer a large degree of freedom in design and high-contrast focus-switching performance based on largely tunable absorption resonances. The proposed method may have great potential in photothermal and electrothermal active optical devices for nonlinear optics, microscopy, 3D scanning, optical trapping, and holographic displays over a wide spectral range including the visible and infrared regimes.

• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3361-3366
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• 2011

New Y-type polyester (3) containing nitrophenylazoresorcinoxy groups as NLO chromophores, which are components of the polymer backbone, was prepared and characterized. Polyester 3 is soluble in common organic solvents such as N,N-dimethylformamide and acetone. It shows a thermal stability up to $240^{\circ}C$ in thermogravimetric analysis with glass-transition temperature ($T_g$) obtained from differential scanning calorimetry near $116^{\circ}C$. The second harmonic generation (SHG) coefficient ($d_{33}$) of poled polymer film at the 1064 nm fundamental wavelength is around $4.63{\times}10^{-9}$ esu. The dipole alignment exhibits a thermal stability even at $4^{\circ}C$ higher than $T_g$, and there is no SHG decay below $120^{\circ}C$ due to the partial main-chain character of polymer structure, which is acceptable for NLO device applications.

• Korean Journal of Optics and Photonics
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• v.10 no.3
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• pp.188-194
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• 1999

We synthesized the nonlinear optical (NLO) PI-SOT(polyimide system, 4-[N,N-bis(hydroxyethyl)amino-4,-($\beta$-cyano-$\beta$-methylsulfonyl)vinyl]azobenzene) polymer with high electro-optic coefficients as well as good thermal and temporal stabilities of the elector-optic coefficient ${\gamma}_33$ by the simple Mitsunobu reaction. By using the simple reflection method of C. C. Teng, we measured the thermal and temporal stabilities of the electro-optic coefficient ${\gamma}_33$ of corona-poled PI-SOT polymer at the wavelength of 632.8 nm and 852 nm, respectively. At the temperature of $20^{\circ}C$, the electro-optic coefficient ${\gamma}_33$ of corona-poled PI-SOT polymer were 25.12 pm/V at the wavelength of 632.8 nm and 5.40 pm/V at the wavelength of 852 nm. These values were highly stabilized for more than 60 days at 2$0^{\circ}C$ and stabilized within 6% for more than 10 hours at $100^{\circ}C$.

• Current Optics and Photonics
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• v.2 no.1
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• pp.69-78
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• 2018

This paper presents a precise edge detection algorithm for the critical dimension (CD) measurement of a Thin-Film Transistor Liquid-Crystal Display (TFT-LCD) pattern. The sigmoid surface function is proposed to model the blurred step edge. This model can simultaneously find the position and geometry of the edge precisely. The nonlinear least squares fitting method (Levenberg-Marquardt method) is used to model the image intensity distribution into the proposed sigmoid blurred edge model. The suggested algorithm is verified by comparing the CD measurement repeatability from high-magnified blurry and noisy TFT-LCD images with those from the previous Laplacian of Gaussian (LoG) based sub-pixel edge detection algorithm and error function fitting method. The proposed fitting-based edge detection algorithm produces more precise results than the previous method. The suggested algorithm can be applied to in-line precision CD measurement for high-resolution display devices.

• Bulletin of the Korean Chemical Society
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• v.23 no.4
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• pp.571-574
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• 2002

The photorefractive polymeric composite with good performance was prepared. The carbazole-substituted polysiloxane sensitized by 2,4,7-trinitro-9-fluorenone was used as a photoconducting medium and 1-[4-(2-nitrovinyl)phenyl]piperidine was added as an optically nonlinear chromophore. The photorefractive property of polymer was determined by diffraction efficiency using a 100 ㎛-thick film. The maximum diffraction efficiency ( ηmax) of 71% was obtained at the electric field of 70 V/ ㎛. The potential of the current polymer material as a holographic recording medium was evaluated by the demonstration of holographic recording and subsequent reading of optical image.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.897-904
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• 1993

CdS doped SiO2 glass coating films which are good candidates for the nonlinear optical materials were prepared by the Sol-Gel method. TEOS, C2H5OH, H2O and HCl were used as starting materials to obtain SiO2 matrix solutions. Then Cd(NO3)2.2H2O and CS(NH2)2 were dissolved into the SiO2 matrix solutions. Coating was performed several times in order to increase the thickness of coated film by the dip-coating method. Then heat treatments were carried out to control the size of CdS microcrystals doped in SiO2 glass matrix with respect to temperatures and times. CdS-doped SiO2 transparent coating films were successfully obtained. CdS crystals were changed from cubic to hexagonal type about $600^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.17 no.7
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• pp.607-612
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• 1996

A series of new NLO-active poly(4-nitrophenylallylamine) derivatives was synthesized by the nucleophilic substitution reaction of several substituted 4-nitrohalobenzenes and poly(allylamine hydrochloride). All polymers obtained were amorphous and their glass transition temperatures (Tg) were observed around 148-160 ℃. For each of these polymers, their specific Tg values were dependent on characteristic electronic structures. UV-visible absorption spectra showed maximum absorption intensity at 355-393 nm for π-π* transition of alkylaminonitrophenyl groups. The χ(2)value of poly(4-nitrophenylallylamine), as determined by the second harmonic generation at 1064 nm, for a thin polymer film poled at an elevated temperature, was 1.4x10-8esu. The third-order NLO properties of poly(4-nitrophenylallylamine) derivatives were evaluated through measurement of degenerate four-wave mixing technique and χ(3) coefficient in the range of 2.7~3.2x10-12 esu at 602 nm was found with 400 fs laser pulses.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• Korean Journal of Optics and Photonics
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• v.10 no.3
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• pp.181-187
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• 1999

We prepared the side-chain type nonlinear optical NPP(N-(6-nitrophenyl)-(L)-prolinol) polymer films by spin coating method. Ellipsometric spectra were in situ collected by using spectroscopic phase modulated ellipsometer while the NPP polymer films were being corona poled at the temperature above glass transition. We calculated film thickness and the refractive index dispersion by modeling the spectro-ellipsometry data in transparent region. We also calculated the refractive index and the extinction coefficient of the polymer films by numerically inverting the spectro-ellipsometry data in absorbing region, while the previously determined film thickness was used. The independently determined extinction coefficient spectra from the analysis of transmission spectra were compared with those by spectro-ellipsometry and they showed an excellent agreement with each other. From the analysis of the complex refractive index change of the NPP polymer thin films induced by the corona poling, we could determine the vertical complex refractive index and the horizontal complex refractive index separately. Using the volume fraction of the vertical component f⊥, the degree of poling of poled NPP polymer films was quantitatively addressed. It is suggested that the present method can be used to quantitatively address the degree of poling in an absolute manner and to depth profile the poled fraction of thick polymer films. It will be useful to understand the structural change of polymer films and hence the poling mechanism during the poling process.